JP5460108B2 - 半導体装置及び半導体装置の作製方法 - Google Patents

半導体装置及び半導体装置の作製方法 Download PDF

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Publication number
JP5460108B2
JP5460108B2 JP2009094062A JP2009094062A JP5460108B2 JP 5460108 B2 JP5460108 B2 JP 5460108B2 JP 2009094062 A JP2009094062 A JP 2009094062A JP 2009094062 A JP2009094062 A JP 2009094062A JP 5460108 B2 JP5460108 B2 JP 5460108B2
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Prior art keywords
insulating layer
layer
inorganic insulating
silicon nitride
inorganic compound
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Expired - Fee Related
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JP2009094062A
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English (en)
Japanese (ja)
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JP2009278072A5 (https=
JP2009278072A (ja
Inventor
欣聡 及川
誠之 梶原
昌孝 中田
正美 神長
舜平 山崎
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2009094062A priority Critical patent/JP5460108B2/ja
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Publication of JP2009278072A5 publication Critical patent/JP2009278072A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0214—Manufacture or treatment of multiple TFTs using temporary substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6731—Top-gate only TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6732—Bottom-gate only TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6746—Amorphous silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H10W74/019—Manufacture or treatment using temporary auxiliary substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/129—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed forming a chip-scale package [CSP]

Landscapes

  • Thin Film Transistor (AREA)
  • Formation Of Insulating Films (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
JP2009094062A 2008-04-18 2009-04-08 半導体装置及び半導体装置の作製方法 Expired - Fee Related JP5460108B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009094062A JP5460108B2 (ja) 2008-04-18 2009-04-08 半導体装置及び半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008109119 2008-04-18
JP2008109119 2008-04-18
JP2009094062A JP5460108B2 (ja) 2008-04-18 2009-04-08 半導体装置及び半導体装置の作製方法

Publications (3)

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JP2009278072A JP2009278072A (ja) 2009-11-26
JP2009278072A5 JP2009278072A5 (https=) 2012-05-31
JP5460108B2 true JP5460108B2 (ja) 2014-04-02

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Country Link
US (2) US9006051B2 (https=)
JP (1) JP5460108B2 (https=)

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US9142804B2 (en) * 2010-02-09 2015-09-22 Samsung Display Co., Ltd. Organic light-emitting device including barrier layer and method of manufacturing the same
JP5355618B2 (ja) * 2011-03-10 2013-11-27 三星ディスプレイ株式會社 可撓性表示装置及びこの製造方法
US9304346B2 (en) * 2011-04-22 2016-04-05 Kyocera Corporation Display device including seal material with improved adhesion strength for bonding two substrates together
CN102938499A (zh) * 2012-01-12 2013-02-20 厦门英诺尔电子科技股份有限公司 一种超高频rfid蚀刻天线及其制造工艺
US11074025B2 (en) 2012-09-03 2021-07-27 Semiconductor Energy Laboratory Co., Ltd. Display device and method for manufacturing the same
JP6603486B2 (ja) 2014-06-27 2019-11-06 株式会社半導体エネルギー研究所 発光装置の作製方法
JP6683503B2 (ja) * 2015-03-03 2020-04-22 株式会社半導体エネルギー研究所 半導体装置
US10028420B2 (en) * 2015-05-22 2018-07-17 Samsung Electro-Mechanics Co., Ltd. Sheet for shielding against electromagnetic waves and wireless power charging device
US9955614B2 (en) * 2015-05-22 2018-04-24 Samsung Electro-Mechanics Co., Ltd. Sheet for shielding against electromagnetic waves and wireless power charging device
WO2020008691A1 (ja) * 2018-07-06 2020-01-09 株式会社村田製作所 無線通信デバイス
JP7628956B2 (ja) * 2019-11-01 2025-02-12 株式会社半導体エネルギー研究所 半導体装置
JP7664171B2 (ja) * 2019-11-08 2025-04-17 株式会社半導体エネルギー研究所 半導体装置

Family Cites Families (23)

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Publication number Priority date Publication date Assignee Title
JP3203815B2 (ja) * 1992-10-19 2001-08-27 セイコーエプソン株式会社 液晶表示装置
JP3613294B2 (ja) * 1995-07-24 2005-01-26 富士通ディスプレイテクノロジーズ株式会社 液晶表示パネル
US6433841B1 (en) * 1997-12-19 2002-08-13 Seiko Epson Corporation Electro-optical apparatus having faces holding electro-optical material in between flattened by using concave recess, manufacturing method thereof, and electronic device using same
JP4748859B2 (ja) * 2000-01-17 2011-08-17 株式会社半導体エネルギー研究所 発光装置の作製方法
US7060153B2 (en) 2000-01-17 2006-06-13 Semiconductor Energy Laboratory Co., Ltd. Display device and method of manufacturing the same
JP2002270735A (ja) 2001-03-13 2002-09-20 Nec Corp 半導体装置及びその製造方法
US7487373B2 (en) 2004-01-30 2009-02-03 Semiconductor Energy Laboratory Co., Ltd. Wireless semiconductor device having low power consumption
JP5008266B2 (ja) 2004-03-25 2012-08-22 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7282380B2 (en) 2004-03-25 2007-10-16 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR101187403B1 (ko) 2004-06-02 2012-10-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치 제조방법
JP4377300B2 (ja) * 2004-06-22 2009-12-02 Ｎｅｃエレクトロニクス株式会社 半導体ウエハおよび半導体装置の製造方法
WO2006011664A1 (en) * 2004-07-30 2006-02-02 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
EP1800348A4 (en) 2004-08-23 2015-09-16 Semiconductor Energy Lab Wireless chip and manufacturing method thereof
JP4947510B2 (ja) 2004-12-24 2012-06-06 Ｎｌｔテクノロジー株式会社 アクティブマトリクス型表示装置及びその製造方法
JP5235051B2 (ja) * 2005-08-31 2013-07-10 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5520431B2 (ja) * 2005-09-02 2014-06-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7700463B2 (en) 2005-09-02 2010-04-20 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
EP3614442A3 (en) 2005-09-29 2020-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having oxide semiconductor layer and manufactoring method thereof
US7696024B2 (en) * 2006-03-31 2010-04-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
EP1970951A3 (en) 2007-03-13 2009-05-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP5268395B2 (ja) 2007-03-26 2013-08-21 株式会社半導体エネルギー研究所 半導体装置の作製方法
EP2001047A1 (en) 2007-06-07 2008-12-10 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device
JP5248240B2 (ja) 2007-08-30 2013-07-31 株式会社半導体エネルギー研究所 半導体装置

Also Published As

Publication number Publication date
US20090261414A1 (en) 2009-10-22
US20150221777A1 (en) 2015-08-06
US9006051B2 (en) 2015-04-14
JP2009278072A (ja) 2009-11-26
US9246009B2 (en) 2016-01-26

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