JP5458176B2 - 半導体ウェハを製造するための方法 - Google Patents
半導体ウェハを製造するための方法 Download PDFInfo
- Publication number
- JP5458176B2 JP5458176B2 JP2012525903A JP2012525903A JP5458176B2 JP 5458176 B2 JP5458176 B2 JP 5458176B2 JP 2012525903 A JP2012525903 A JP 2012525903A JP 2012525903 A JP2012525903 A JP 2012525903A JP 5458176 B2 JP5458176 B2 JP 5458176B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor wafer
- polishing
- abrasive
- polishing pad
- edge
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims description 214
- 238000000034 method Methods 0.000 title claims description 90
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 238000005498 polishing Methods 0.000 claims description 243
- 238000000227 grinding Methods 0.000 claims description 92
- 239000002245 particle Substances 0.000 claims description 50
- 239000000463 material Substances 0.000 claims description 41
- 238000012545 processing Methods 0.000 claims description 38
- 239000003082 abrasive agent Substances 0.000 claims description 28
- 239000002002 slurry Substances 0.000 claims description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 17
- 239000013078 crystal Substances 0.000 claims description 17
- 238000005530 etching Methods 0.000 claims description 15
- 229910052710 silicon Inorganic materials 0.000 claims description 15
- 239000010703 silicon Substances 0.000 claims description 15
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 11
- 239000010432 diamond Substances 0.000 claims description 10
- 230000001590 oxidative effect Effects 0.000 claims description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 9
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims description 9
- 229910003460 diamond Inorganic materials 0.000 claims description 9
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims description 9
- 239000007800 oxidant agent Substances 0.000 claims description 9
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- 239000000377 silicon dioxide Substances 0.000 claims description 8
- 229910052684 Cerium Inorganic materials 0.000 claims description 6
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 6
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- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 5
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- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 4
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- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 12
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- QEMXHQIAXOOASZ-UHFFFAOYSA-N tetramethylammonium Chemical compound C[N+](C)(C)C QEMXHQIAXOOASZ-UHFFFAOYSA-N 0.000 description 4
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- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
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- 238000007517 polishing process Methods 0.000 description 3
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- MGWGWNFMUOTEHG-UHFFFAOYSA-N 4-(3,5-dimethylphenyl)-1,3-thiazol-2-amine Chemical compound CC1=CC(C)=CC(C=2N=C(N)SC=2)=C1 MGWGWNFMUOTEHG-UHFFFAOYSA-N 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
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- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
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- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
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- 229910052796 boron Inorganic materials 0.000 description 1
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 description 1
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- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
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- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
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- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
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- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 1
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- 239000002356 single layer Substances 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02024—Mirror polishing
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102009038941.5 | 2009-08-26 | ||
| DE102009038941A DE102009038941B4 (de) | 2009-08-26 | 2009-08-26 | Verfahren zur Herstellung einer Halbleiterscheibe |
| PCT/EP2010/004916 WO2011023297A1 (de) | 2009-08-26 | 2010-08-11 | Verfahren zur herstellung einer halbleiterscheibe |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2013502733A JP2013502733A (ja) | 2013-01-24 |
| JP5458176B2 true JP5458176B2 (ja) | 2014-04-02 |
Family
ID=43384186
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012525903A Expired - Fee Related JP5458176B2 (ja) | 2009-08-26 | 2010-08-11 | 半導体ウェハを製造するための方法 |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US8343873B2 (ko) |
| EP (1) | EP2471088A1 (ko) |
| JP (1) | JP5458176B2 (ko) |
| KR (1) | KR101316364B1 (ko) |
| CN (1) | CN102484042B (ko) |
| DE (1) | DE102009038941B4 (ko) |
| MY (1) | MY153463A (ko) |
| SG (1) | SG178470A1 (ko) |
| WO (1) | WO2011023297A1 (ko) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10065288B2 (en) | 2012-02-14 | 2018-09-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | Chemical mechanical polishing (CMP) platform for local profile control |
| JP6045869B2 (ja) * | 2012-10-01 | 2016-12-14 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理装置および基板処理方法 |
| CN103029026B (zh) * | 2012-12-13 | 2014-11-26 | 天津中环领先材料技术有限公司 | 一种超高清洗能力的单晶硅晶圆片清洗方法 |
| JP6265594B2 (ja) * | 2012-12-21 | 2018-01-24 | ラピスセミコンダクタ株式会社 | 半導体装置の製造方法、及び半導体装置 |
| DE102013204839A1 (de) | 2013-03-19 | 2014-09-25 | Siltronic Ag | Verfahren zum Polieren einer Scheibe aus Halbleitermaterial |
| JP6106535B2 (ja) * | 2013-06-24 | 2017-04-05 | 昭和電工株式会社 | ＳｉＣ基板の製造方法 |
| KR102379168B1 (ko) * | 2014-09-16 | 2022-03-29 | 삼성전자주식회사 | 반도체 칩 본딩 장치 |
| CN106141903A (zh) * | 2015-04-11 | 2016-11-23 | 天津西美科技有限公司 | 双面陶瓷研磨盘的合成 |
| CN106466805B (zh) * | 2015-08-19 | 2020-01-14 | 台湾积体电路制造股份有限公司 | 用于局部轮廓控制的化学机械抛光(cmp)平台 |
| DE102015224933A1 (de) * | 2015-12-11 | 2017-06-14 | Siltronic Ag | Monokristalline Halbleiterscheibe und Verfahren zur Herstellung einer Halbleiterscheibe |
| JP6779541B1 (ja) * | 2019-07-02 | 2020-11-04 | 株式会社東京ダイヤモンド工具製作所 | 合成砥石 |
| CN112386128B (zh) * | 2020-11-16 | 2021-11-05 | 台州智子科技有限公司 | 一种咖啡饮料的原料研磨装置 |
| CN112658975A (zh) * | 2020-12-17 | 2021-04-16 | 江苏集萃精凯高端装备技术有限公司 | 片状氧化镥激光晶体研磨方法 |
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| CN114770366B (zh) * | 2022-05-17 | 2023-11-17 | 西安奕斯伟材料科技股份有限公司 | 一种硅片双面研磨装置的静压板及硅片双面研磨装置 |
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-
2009
- 2009-08-26 DE DE102009038941A patent/DE102009038941B4/de not_active Expired - Fee Related
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2010
- 2010-08-11 JP JP2012525903A patent/JP5458176B2/ja not_active Expired - Fee Related
- 2010-08-11 US US13/392,151 patent/US8343873B2/en not_active Expired - Fee Related
- 2010-08-11 CN CN201080038036.9A patent/CN102484042B/zh not_active Expired - Fee Related
- 2010-08-11 WO PCT/EP2010/004916 patent/WO2011023297A1/de active Application Filing
- 2010-08-11 EP EP10743044A patent/EP2471088A1/de not_active Withdrawn
- 2010-08-11 MY MYPI2012000707A patent/MY153463A/en unknown
- 2010-08-11 KR KR1020127005720A patent/KR101316364B1/ko active IP Right Grant
- 2010-08-11 SG SG2012011052A patent/SG178470A1/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| KR101316364B1 (ko) | 2013-10-08 |
| EP2471088A1 (de) | 2012-07-04 |
| SG178470A1 (en) | 2012-04-27 |
| MY153463A (en) | 2015-02-13 |
| US8343873B2 (en) | 2013-01-01 |
| CN102484042B (zh) | 2014-11-19 |
| US20120149198A1 (en) | 2012-06-14 |
| DE102009038941B4 (de) | 2013-03-21 |
| JP2013502733A (ja) | 2013-01-24 |
| DE102009038941A1 (de) | 2011-03-10 |
| CN102484042A (zh) | 2012-05-30 |
| WO2011023297A1 (de) | 2011-03-03 |
| KR20120048670A (ko) | 2012-05-15 |
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