JP5438779B2 - 圧気輸送の間の粒子への原子又は分子層堆積のための装置及び方法 - Google Patents

圧気輸送の間の粒子への原子又は分子層堆積のための装置及び方法 Download PDF

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JP5438779B2
JP5438779B2 JP2011552450A JP2011552450A JP5438779B2 JP 5438779 B2 JP5438779 B2 JP 5438779B2 JP 2011552450 A JP2011552450 A JP 2011552450A JP 2011552450 A JP2011552450 A JP 2011552450A JP 5438779 B2 JP5438779 B2 JP 5438779B2
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tube
particles
reactant
injection
injection point
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JP2012519773A (ja
JP2012519773A5 (https=
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オンメン，ヤン ルドルフ ファン
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デルフト ユニベルシティ オブ テクノロジー
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4417—Methods specially adapted for coating powder
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J8/00—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes
    • B01J8/18—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with fluidised particles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/442—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using fluidised bed process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
    • C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Combustion & Propulsion (AREA)
  • Chemical Vapour Deposition (AREA)
  • Devices And Processes Conducted In The Presence Of Fluids And Solid Particles (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
JP2011552450A 2009-03-04 2010-03-04 圧気輸送の間の粒子への原子又は分子層堆積のための装置及び方法 Active JP5438779B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
NL2002590A NL2002590C2 (en) 2009-03-04 2009-03-04 Apparatus and process for atomic or molecular layer deposition onto particles during pneumatic transport.
NL2002590 2009-03-04
PCT/EP2010/052769 WO2010100235A1 (en) 2009-03-04 2010-03-04 Apparatus and process for atomic or molecular layer deposition onto particles during pneumatic transport

Publications (3)

Publication Number Publication Date
JP2012519773A JP2012519773A (ja) 2012-08-30
JP2012519773A5 JP2012519773A5 (https=) 2013-04-18
JP5438779B2 true JP5438779B2 (ja) 2014-03-12

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JP2011552450A Active JP5438779B2 (ja) 2009-03-04 2010-03-04 圧気輸送の間の粒子への原子又は分子層堆積のための装置及び方法

Country Status (9)

Country Link
US (4) US9845532B2 (https=)
EP (1) EP2403976B1 (https=)
JP (1) JP5438779B2 (https=)
KR (1) KR101696946B1 (https=)
CN (1) CN102414342B (https=)
CA (1) CA2754093C (https=)
DK (1) DK2403976T3 (https=)
NL (1) NL2002590C2 (https=)
WO (1) WO2010100235A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0747371Y2 (ja) 1989-08-30 1995-11-01 三菱原子燃料株式会社 円柱体の搬送装置

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NL2002590C2 (en) * 2009-03-04 2010-09-07 Univ Delft Technology Apparatus and process for atomic or molecular layer deposition onto particles during pneumatic transport.
FI20095307A0 (fi) * 2009-03-25 2009-03-25 Beneq Oy Päällystysmenetelmä ja -laitteisto
JP2016508544A (ja) * 2013-01-23 2016-03-22 ピコサン オーワイＰｉｃｏｓｕｎ Ｏｙ 粒子材料の処理のための方法及び装置
KR101550500B1 (ko) 2013-02-28 2015-09-04 고려대학교 산학협력단 파우더 이송형 원자층 증착 장치
US10030851B2 (en) 2013-03-20 2018-07-24 Lumileds Llc Encapsulated quantum dots in porous particles
US9873940B2 (en) 2013-12-31 2018-01-23 Lam Research Corporation Coating system and method for coating interior fluid wetted surfaces of a component of a semiconductor substrate processing apparatus
JP6732658B2 (ja) 2014-04-01 2020-07-29 ニューマティコート テクノロジーズ リミティド ライアビリティ カンパニー 被覆ナノ粒子を含む受動電子部品及びその製造と使用方法
NL2014348B1 (en) * 2015-02-25 2016-10-13 Univ Delft Tech Controlled release from particles encapsulated by molecular layer deposition.
WO2016205242A1 (en) 2015-06-15 2016-12-22 Ald Nanosolutions, Inc. Continuous spatial atomic layer deposition process and apparatus for applying films on particles
WO2018050954A1 (en) 2016-09-16 2018-03-22 Picosun Oy Particle coating by atomic layer depostion (ald)
JP7127036B2 (ja) 2017-01-23 2022-08-29 ビーエーエスエフ ソシエタス・ヨーロピア カソード材料の製造方法、及び当該方法を行うことに適する反応器
KR102086574B1 (ko) 2018-04-03 2020-03-09 전남대학교산학협력단 분말 입자를 코팅할 수 있는 증착장치 및 분말 입자의 코팅 방법
TW202229622A (zh) 2019-04-24 2022-08-01 美商應用材料股份有限公司 用於在具有旋轉槳的固定的腔室中塗覆顆粒的反應器
TWI765795B (zh) 2019-04-24 2022-05-21 美商應用材料股份有限公司 具有旋轉葉片與氣體注入之用於在固定腔室中塗覆粒子的反應器
WO2021097143A2 (en) 2019-11-12 2021-05-20 Forge Nano Inc. Coatings on particles of high energy materials and methods of forming same
US12220678B2 (en) 2020-07-30 2025-02-11 Applied Materials, Inc. Paddle configuration for a particle coating reactor
NL2026635B1 (en) 2020-10-07 2022-06-07 Univ Delft Tech Integrated manufacturing of core-shell particles for Li-ion batteries
EP4289632A1 (en) 2022-06-09 2023-12-13 Continental Reifen Deutschland GmbH Method for producing a rubber composition using pretreated filler
NL2036587B1 (en) 2023-12-19 2025-07-01 Powall Holding B V Particulate Composite Iridium Oxide Materials and Preparation Method and Application Thereof

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0747371Y2 (ja) 1989-08-30 1995-11-01 三菱原子燃料株式会社 円柱体の搬送装置

Also Published As

Publication number Publication date
JP2012519773A (ja) 2012-08-30
WO2010100235A1 (en) 2010-09-10
US20210102288A1 (en) 2021-04-08
DK2403976T3 (da) 2013-10-14
CA2754093C (en) 2017-04-04
KR20110139241A (ko) 2011-12-28
US20120009343A1 (en) 2012-01-12
KR101696946B1 (ko) 2017-01-16
EP2403976B1 (en) 2013-07-10
US20180073138A1 (en) 2018-03-15
CA2754093A1 (en) 2010-09-10
CN102414342B (zh) 2014-05-21
EP2403976A1 (en) 2012-01-11
CN102414342A (zh) 2012-04-11
US9845532B2 (en) 2017-12-19
US20230340665A1 (en) 2023-10-26
NL2002590C2 (en) 2010-09-07

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