KR101696946B1 - 공기압 운반 동안 입자로의 원자층 또는 분자층 피착을 위한 장치 및 공정 - Google Patents

공기압 운반 동안 입자로의 원자층 또는 분자층 피착을 위한 장치 및 공정 Download PDF

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KR101696946B1
KR101696946B1 KR1020117022758A KR20117022758A KR101696946B1 KR 101696946 B1 KR101696946 B1 KR 101696946B1 KR 1020117022758 A KR1020117022758 A KR 1020117022758A KR 20117022758 A KR20117022758 A KR 20117022758A KR 101696946 B1 KR101696946 B1 KR 101696946B1
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tube
particles
reactant
injection
carrier gas
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KR20110139241A (ko
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오멘 잔 루돌프 반
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테크니쉐 유니버시테이트 델프트
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4417—Methods specially adapted for coating powder
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J8/00—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes
    • B01J8/18—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with fluidised particles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/442—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using fluidised bed process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
    • C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Combustion & Propulsion (AREA)
  • Chemical Vapour Deposition (AREA)
  • Devices And Processes Conducted In The Presence Of Fluids And Solid Particles (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
KR1020117022758A 2009-03-04 2010-03-04 공기압 운반 동안 입자로의 원자층 또는 분자층 피착을 위한 장치 및 공정 Active KR101696946B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
NL2002590A NL2002590C2 (en) 2009-03-04 2009-03-04 Apparatus and process for atomic or molecular layer deposition onto particles during pneumatic transport.
NL2002590 2009-03-04
PCT/EP2010/052769 WO2010100235A1 (en) 2009-03-04 2010-03-04 Apparatus and process for atomic or molecular layer deposition onto particles during pneumatic transport

Publications (2)

Publication Number Publication Date
KR20110139241A KR20110139241A (ko) 2011-12-28
KR101696946B1 true KR101696946B1 (ko) 2017-01-16

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KR1020117022758A Active KR101696946B1 (ko) 2009-03-04 2010-03-04 공기압 운반 동안 입자로의 원자층 또는 분자층 피착을 위한 장치 및 공정

Country Status (9)

Country Link
US (4) US9845532B2 (https=)
EP (1) EP2403976B1 (https=)
JP (1) JP5438779B2 (https=)
KR (1) KR101696946B1 (https=)
CN (1) CN102414342B (https=)
CA (1) CA2754093C (https=)
DK (1) DK2403976T3 (https=)
NL (1) NL2002590C2 (https=)
WO (1) WO2010100235A1 (https=)

Cited By (1)

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WO2019194347A1 (ko) * 2018-04-03 2019-10-10 전남대학교산학협력단 분말 입자를 코팅할 수 있는 증착장치 및 분말 입자의 코팅 방법

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NL2002590C2 (en) * 2009-03-04 2010-09-07 Univ Delft Technology Apparatus and process for atomic or molecular layer deposition onto particles during pneumatic transport.
FI20095307A0 (fi) * 2009-03-25 2009-03-25 Beneq Oy Päällystysmenetelmä ja -laitteisto
JP2016508544A (ja) * 2013-01-23 2016-03-22 ピコサン オーワイＰｉｃｏｓｕｎ Ｏｙ 粒子材料の処理のための方法及び装置
KR101550500B1 (ko) 2013-02-28 2015-09-04 고려대학교 산학협력단 파우더 이송형 원자층 증착 장치
US10030851B2 (en) 2013-03-20 2018-07-24 Lumileds Llc Encapsulated quantum dots in porous particles
US9873940B2 (en) 2013-12-31 2018-01-23 Lam Research Corporation Coating system and method for coating interior fluid wetted surfaces of a component of a semiconductor substrate processing apparatus
JP6732658B2 (ja) 2014-04-01 2020-07-29 ニューマティコート テクノロジーズ リミティド ライアビリティ カンパニー 被覆ナノ粒子を含む受動電子部品及びその製造と使用方法
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WO2018050954A1 (en) 2016-09-16 2018-03-22 Picosun Oy Particle coating by atomic layer depostion (ald)
JP7127036B2 (ja) 2017-01-23 2022-08-29 ビーエーエスエフ ソシエタス・ヨーロピア カソード材料の製造方法、及び当該方法を行うことに適する反応器
TW202229622A (zh) 2019-04-24 2022-08-01 美商應用材料股份有限公司 用於在具有旋轉槳的固定的腔室中塗覆顆粒的反應器
TWI765795B (zh) 2019-04-24 2022-05-21 美商應用材料股份有限公司 具有旋轉葉片與氣體注入之用於在固定腔室中塗覆粒子的反應器
WO2021097143A2 (en) 2019-11-12 2021-05-20 Forge Nano Inc. Coatings on particles of high energy materials and methods of forming same
US12220678B2 (en) 2020-07-30 2025-02-11 Applied Materials, Inc. Paddle configuration for a particle coating reactor
NL2026635B1 (en) 2020-10-07 2022-06-07 Univ Delft Tech Integrated manufacturing of core-shell particles for Li-ion batteries
EP4289632A1 (en) 2022-06-09 2023-12-13 Continental Reifen Deutschland GmbH Method for producing a rubber composition using pretreated filler
NL2036587B1 (en) 2023-12-19 2025-07-01 Powall Holding B V Particulate Composite Iridium Oxide Materials and Preparation Method and Application Thereof

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WO2019194347A1 (ko) * 2018-04-03 2019-10-10 전남대학교산학협력단 분말 입자를 코팅할 수 있는 증착장치 및 분말 입자의 코팅 방법
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Also Published As

Publication number Publication date
JP2012519773A (ja) 2012-08-30
WO2010100235A1 (en) 2010-09-10
US20210102288A1 (en) 2021-04-08
DK2403976T3 (da) 2013-10-14
CA2754093C (en) 2017-04-04
KR20110139241A (ko) 2011-12-28
US20120009343A1 (en) 2012-01-12
EP2403976B1 (en) 2013-07-10
US20180073138A1 (en) 2018-03-15
CA2754093A1 (en) 2010-09-10
CN102414342B (zh) 2014-05-21
EP2403976A1 (en) 2012-01-11
CN102414342A (zh) 2012-04-11
US9845532B2 (en) 2017-12-19
US20230340665A1 (en) 2023-10-26
JP5438779B2 (ja) 2014-03-12
NL2002590C2 (en) 2010-09-07

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