JP5427888B2 - プラズマ処理チャンバ内のストライクステップを検出するための容量結合静電（ｃｃｅ）プローブ構成、それに関連する方法、及び、その方法を実行するコードを格納するプログラム格納媒体 - Google Patents

プラズマ処理チャンバ内のストライクステップを検出するための容量結合静電（ｃｃｅ）プローブ構成、それに関連する方法、及び、その方法を実行するコードを格納するプログラム格納媒体 Download PDF

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JP5427888B2
JP5427888B2 JP2011517510A JP2011517510A JP5427888B2 JP 5427888 B2 JP5427888 B2 JP 5427888B2 JP 2011517510 A JP2011517510 A JP 2011517510A JP 2011517510 A JP2011517510 A JP 2011517510A JP 5427888 B2 JP5427888 B2 JP 5427888B2
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measurement results
plasma
characteristic parameter
processing chamber
parameter measurement
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JP2011527521A (ja
JP2011527521A5 (enExample
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ブース・ジャン−ポール
キール・ダグラス・エル．
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Lam Research Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/0006—Investigating plasma, e.g. measuring the degree of ionisation or the electron temperature
    • H05H1/0081—Investigating plasma, e.g. measuring the degree of ionisation or the electron temperature by electric means
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/0006—Investigating plasma, e.g. measuring the degree of ionisation or the electron temperature
    • H05H1/0012—Investigating plasma, e.g. measuring the degree of ionisation or the electron temperature using electromagnetic or particle radiation, e.g. interferometry

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Electromagnetism (AREA)
  • General Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
JP2011517510A 2008-07-07 2009-07-07 プラズマ処理チャンバ内のストライクステップを検出するための容量結合静電（ｃｃｅ）プローブ構成、それに関連する方法、及び、その方法を実行するコードを格納するプログラム格納媒体 Expired - Fee Related JP5427888B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US7873908P 2008-07-07 2008-07-07
US61/078,739 2008-07-07
PCT/US2009/049757 WO2010005930A2 (en) 2008-07-07 2009-07-07 Capacitively-coupled electrostatic (cce) probe arrangement for detecting strike step in a plasma processing chamber and methods thereof

Publications (3)

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JP2011527521A JP2011527521A (ja) 2011-10-27
JP2011527521A5 JP2011527521A5 (enExample) 2013-04-11
JP5427888B2 true JP5427888B2 (ja) 2014-02-26

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JP2011517510A Expired - Fee Related JP5427888B2 (ja) 2008-07-07 2009-07-07 プラズマ処理チャンバ内のストライクステップを検出するための容量結合静電（ｃｃｅ）プローブ構成、それに関連する方法、及び、その方法を実行するコードを格納するプログラム格納媒体

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US (1) US8164349B2 (enExample)
JP (1) JP5427888B2 (enExample)
KR (1) KR20110039239A (enExample)
CN (2) CN102084473B (enExample)
TW (1) TWI467623B (enExample)
WO (1) WO2010005930A2 (enExample)

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CN104320899A (zh) 2015-01-28
US20100006417A1 (en) 2010-01-14
CN102084473A (zh) 2011-06-01
JP2011527521A (ja) 2011-10-27
TW201003717A (en) 2010-01-16
WO2010005930A2 (en) 2010-01-14
US8164349B2 (en) 2012-04-24
CN102084473B (zh) 2014-10-22
KR20110039239A (ko) 2011-04-15
WO2010005930A3 (en) 2010-04-22
TWI467623B (zh) 2015-01-01

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