CN102084473B - 用于检测等离子处理室中激发步骤的电容耦合静电(cce)探针装置及其方法 - Google Patents

用于检测等离子处理室中激发步骤的电容耦合静电(cce)探针装置及其方法 Download PDF

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Publication number
CN102084473B
CN102084473B CN200980126807.7A CN200980126807A CN102084473B CN 102084473 B CN102084473 B CN 102084473B CN 200980126807 A CN200980126807 A CN 200980126807A CN 102084473 B CN102084473 B CN 102084473B
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plasma
measured value
group
characterisitic parameter
parameter measured
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CN102084473A (zh
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杰-保罗·布斯
道格拉斯·L·凯尔
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Lam Research Corp
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Lam Research Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/0006—Investigating plasma, e.g. measuring the degree of ionisation or the electron temperature
    • H05H1/0081—Investigating plasma, e.g. measuring the degree of ionisation or the electron temperature by electric means
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/0006—Investigating plasma, e.g. measuring the degree of ionisation or the electron temperature
    • H05H1/0012—Investigating plasma, e.g. measuring the degree of ionisation or the electron temperature using electromagnetic or particle radiation, e.g. interferometry

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Electromagnetism (AREA)
  • General Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
CN200980126807.7A 2008-07-07 2009-07-07 用于检测等离子处理室中激发步骤的电容耦合静电(cce)探针装置及其方法 Expired - Fee Related CN102084473B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US7873908P 2008-07-07 2008-07-07
US61/078,739 2008-07-07
PCT/US2009/049757 WO2010005930A2 (en) 2008-07-07 2009-07-07 Capacitively-coupled electrostatic (cce) probe arrangement for detecting strike step in a plasma processing chamber and methods thereof

Related Child Applications (1)

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CN201410422254.2A Division CN104320899A (zh) 2008-07-07 2009-07-07 用于检测等离子处理室中激发步骤的电容耦合静电(cce)探针装置及其方法

Publications (2)

Publication Number Publication Date
CN102084473A CN102084473A (zh) 2011-06-01
CN102084473B true CN102084473B (zh) 2014-10-22

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CN201410422254.2A Pending CN104320899A (zh) 2008-07-07 2009-07-07 用于检测等离子处理室中激发步骤的电容耦合静电(cce)探针装置及其方法
CN200980126807.7A Expired - Fee Related CN102084473B (zh) 2008-07-07 2009-07-07 用于检测等离子处理室中激发步骤的电容耦合静电(cce)探针装置及其方法

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Country Status (6)

Country Link
US (1) US8164349B2 (enExample)
JP (1) JP5427888B2 (enExample)
KR (1) KR20110039239A (enExample)
CN (2) CN104320899A (enExample)
TW (1) TWI467623B (enExample)
WO (1) WO2010005930A2 (enExample)

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KR101606736B1 (ko) * 2008-07-07 2016-03-28 램 리써치 코포레이션 플라즈마 프로세싱 챔버에서 플라즈마 불안정성을 검출하기 위한 패시브 용량성-결합된 정전식 (ｃｃｅ) 프로브 장치
WO2010005929A2 (en) 2008-07-07 2010-01-14 Lam Research Corporation Passive capacitively-coupled electrostatic (cce) probe arrangement for detecting in-situ arcing events in a plasma processing chamber
TWI494030B (zh) * 2008-07-07 2015-07-21 Lam Res Corp 供使用於電漿處理腔室中之含真空間隙的面向電漿之探針裝置
JP5643198B2 (ja) * 2008-07-07 2014-12-17 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ プラズマ処理チャンバ内の膜を特徴付けるためのｒｆバイアス容量結合静電（ｒｆｂ−ｃｃｅ）プローブ構成、それに関連する方法、及び、その方法を実行するコードを格納するプログラム格納媒体
KR20110050618A (ko) * 2008-07-07 2011-05-16 램 리써치 코포레이션 플라즈마 프로세싱 챔버에서 디척킹을 검출하기 위한 용량성-커플링된 정전식 (ｃｃｅ) 프로브 장치 및 그 방법
US9017513B2 (en) 2012-11-07 2015-04-28 Lam Research Corporation Plasma monitoring probe assembly and processing chamber incorporating the same
JP6195528B2 (ja) * 2014-02-19 2017-09-13 東京エレクトロン株式会社 プラズマ処理装置及びその運転方法
JP7175239B2 (ja) * 2018-06-22 2022-11-18 東京エレクトロン株式会社 制御方法、プラズマ処理装置、プログラム及び記憶媒体
CN120152129B (zh) * 2025-03-14 2025-09-23 济南东汉半导体设备有限公司 面向离子工艺系统的射频等离子体综合测试装置及方法

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Also Published As

Publication number Publication date
CN104320899A (zh) 2015-01-28
CN102084473A (zh) 2011-06-01
TWI467623B (zh) 2015-01-01
JP5427888B2 (ja) 2014-02-26
WO2010005930A2 (en) 2010-01-14
JP2011527521A (ja) 2011-10-27
US20100006417A1 (en) 2010-01-14
US8164349B2 (en) 2012-04-24
TW201003717A (en) 2010-01-16
WO2010005930A3 (en) 2010-04-22
KR20110039239A (ko) 2011-04-15

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Granted publication date: 20141022

Termination date: 20170707