JP5425858B2 - 再使用が可能なシリコン溶融用二重坩堝を備える単結晶シリコンインゴット成長装置 - Google Patents
再使用が可能なシリコン溶融用二重坩堝を備える単結晶シリコンインゴット成長装置 Download PDFInfo
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- JP5425858B2 JP5425858B2 JP2011228231A JP2011228231A JP5425858B2 JP 5425858 B2 JP5425858 B2 JP 5425858B2 JP 2011228231 A JP2011228231 A JP 2011228231A JP 2011228231 A JP2011228231 A JP 2011228231A JP 5425858 B2 JP5425858 B2 JP 5425858B2
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
- C30B15/12—Double crucible methods
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/52—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbon, e.g. graphite
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
- C30B35/002—Crucibles or containers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1072—Seed pulling including details of means providing product movement [e.g., shaft guides, servo means]
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
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- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metallurgy (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Structural Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
Claims (9)
- シリコン原料が装入されるシリコン溶融用二重坩堝;
前記シリコン原料を溶融させてシリコン溶湯を形成するために前記シリコン溶融用二重坩堝を加熱する坩堝加熱部;
前記シリコン溶融用二重坩堝の回転及び昇降運動を制御する坩堝駆動部;及び
前記シリコン溶融用二重坩堝の上側に配置され、前記シリコン溶湯にディッピングされたシード結晶を引き上げてシリコンインゴットを成長させる引上駆動部;を含み、
前記シリコン溶融用二重坩堝は、上側が開放される容器形態であり、底面と内壁面とを連結する傾斜面と底面を貫通する吐出口を備える黒鉛坩堝と、前記黒鉛坩堝の内側に挿入されて結合され、内部に前記シリコン原料が装入されるクォーツ坩堝と、を有し、
前記シリコン溶湯が前記吐出口から下方へ吐出される、
ことを特徴とする単結晶シリコンインゴット成長装置。 - 前記坩堝加熱部は、前記シリコン溶融用二重坩堝の外壁を取り囲むコイルを有することを特徴とする、請求項1に記載の単結晶シリコンインゴット成長装置。
- 前記引上駆動部は、
シード結晶を固定させるシード結晶固定軸と、
前記シード結晶固定軸と連結され、前記シード結晶固定軸の回転及び昇降運動を制御する固定軸駆動ユニットと、を含むことを特徴とする、請求項1に記載の単結晶シリコンインゴット成長装置。 - 前記坩堝駆動部は、
前記シリコン溶融用二重坩堝の下側を支持する支持チャックと、
前記支持チャックの回転及び昇降運動を制御する支持チャック駆動ユニットと、を含むことを特徴とする、請求項1に記載の単結晶シリコンインゴット成長装置。 - 前記黒鉛坩堝は、壁面の一部が縦方向に切開された複数のスリットを備えることを特徴とする、請求項1に記載の単結晶シリコンインゴット成長装置。
- 前記シリコンインゴット成長装置は、前記シリコン溶融用二重坩堝と坩堝駆動部との間に配置され、前記吐出口を開閉するゲートバーをさらに含むことを特徴とする、請求項1に記載の単結晶シリコンインゴット成長装置。
- 前記黒鉛坩堝の傾斜面は、黒鉛坩堝の内部底面に対して3°以上の勾配を有することを特徴とする、請求項1に記載の単結晶シリコンインゴット成長装置。
- 前記クォーツ坩堝は、少なくとも2回以上再使用されることを特徴とする、請求項1に記載の単結晶シリコンインゴット成長装置。
- 前記クォーツ坩堝は、黒鉛坩堝とシリコン原料との接触を遮断するために前記黒鉛坩堝の内面全体を覆って形成することを特徴とする、請求項1記載の単結晶シリコンインゴット成長装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020110044753A KR101265154B1 (ko) | 2011-05-12 | 2011-05-12 | 재사용이 가능한 실리콘 용융용 이중 도가니를 구비하는 단결정 실리콘 잉곳 성장 장치 |
KR10-2011-0044753 | 2011-05-12 |
Publications (2)
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JP2012236755A JP2012236755A (ja) | 2012-12-06 |
JP5425858B2 true JP5425858B2 (ja) | 2014-02-26 |
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JP2011228231A Expired - Fee Related JP5425858B2 (ja) | 2011-05-12 | 2011-10-17 | 再使用が可能なシリコン溶融用二重坩堝を備える単結晶シリコンインゴット成長装置 |
Country Status (3)
Country | Link |
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US (1) | US9040010B2 (ja) |
JP (1) | JP5425858B2 (ja) |
KR (1) | KR101265154B1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
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KR101428626B1 (ko) * | 2013-01-31 | 2014-08-13 | 한국에너지기술연구원 | 고화 방지 효과가 우수한 실리콘 용융용 도가니 |
KR101455851B1 (ko) * | 2013-04-24 | 2014-10-28 | 한국생산기술연구원 | 이중 도가니를 포함하는 용해로 시스템 |
KR101683646B1 (ko) * | 2015-04-09 | 2016-12-08 | 주식회사 사파이어테크놀로지 | 사파이어 단결정 성장용 도가니 및 이를 이용한 단결정 성장장치 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS5910960B2 (ja) | 1978-03-22 | 1984-03-12 | 三菱マテリアル株式会社 | 連続引上式単結晶製造法および装置 |
JPS6287489A (ja) | 1985-10-12 | 1987-04-21 | Sumitomo Electric Ind Ltd | るつぼの回収方法及び装置 |
JPH0345587A (ja) | 1989-07-14 | 1991-02-27 | Toshiba Corp | 半導体結晶棒の製造方法 |
JP3508877B2 (ja) | 1994-08-09 | 2004-03-22 | 住友チタニウム株式会社 | シリコン溶解装置 |
JP2002154892A (ja) | 2000-11-10 | 2002-05-28 | Ibiden Co Ltd | シリコン単結晶引上用ルツボ |
JP2005225718A (ja) | 2004-02-13 | 2005-08-25 | Shin Etsu Handotai Co Ltd | 黒鉛ルツボ及び黒鉛ルツボの管理方法 |
US7465351B2 (en) * | 2004-06-18 | 2008-12-16 | Memc Electronic Materials, Inc. | Melter assembly and method for charging a crystal forming apparatus with molten source material |
JP2006273666A (ja) | 2005-03-29 | 2006-10-12 | Kyocera Corp | シリコン融解坩堝及びこれを用いたシリコン鋳造装置並びに多結晶シリコンインゴットの鋳造方法 |
JP2006275426A (ja) | 2005-03-29 | 2006-10-12 | Kyocera Corp | 坩堝および半導体インゴットの製造方法 |
JP2011057469A (ja) | 2009-09-07 | 2011-03-24 | Mitsubishi Materials Techno Corp | 坩堝開口部保持部材、単結晶シリコンの製造方法及び単結晶シリコンの製造装置 |
JP5337641B2 (ja) | 2009-09-07 | 2013-11-06 | 三菱マテリアルテクノ株式会社 | 残存シリコン融液の除去方法、単結晶シリコンの製造方法、単結晶シリコンの製造装置 |
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2011
- 2011-05-12 KR KR1020110044753A patent/KR101265154B1/ko active IP Right Grant
- 2011-10-06 US US13/267,490 patent/US9040010B2/en not_active Expired - Fee Related
- 2011-10-17 JP JP2011228231A patent/JP5425858B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
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KR20120126731A (ko) | 2012-11-21 |
US20120288432A1 (en) | 2012-11-15 |
US9040010B2 (en) | 2015-05-26 |
JP2012236755A (ja) | 2012-12-06 |
KR101265154B1 (ko) | 2013-05-27 |
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