JP5420157B2 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
JP5420157B2
JP5420157B2 JP2007152494A JP2007152494A JP5420157B2 JP 5420157 B2 JP5420157 B2 JP 5420157B2 JP 2007152494 A JP2007152494 A JP 2007152494A JP 2007152494 A JP2007152494 A JP 2007152494A JP 5420157 B2 JP5420157 B2 JP 5420157B2
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Japan
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silicon nitride
nitride film
gan
refractive index
electrode
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JP2007152494A
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Japanese (ja)
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JP2008306025A (ja
JP2008306025A5 (enExample
Inventor
務 駒谷
眞弘 西
均 生松
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Sumitomo Electric Device Innovations Inc
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Sumitomo Electric Device Innovations Inc
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  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Junction Field-Effect Transistors (AREA)
JP2007152494A 2007-06-08 2007-06-08 半導体装置の製造方法 Active JP5420157B2 (ja)

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JP2007152494A JP5420157B2 (ja) 2007-06-08 2007-06-08 半導体装置の製造方法

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JP2007152494A JP5420157B2 (ja) 2007-06-08 2007-06-08 半導体装置の製造方法

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JP2008306025A JP2008306025A (ja) 2008-12-18
JP2008306025A5 JP2008306025A5 (enExample) 2010-06-17
JP5420157B2 true JP5420157B2 (ja) 2014-02-19

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Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4794655B2 (ja) * 2009-06-09 2011-10-19 シャープ株式会社 電界効果トランジスタ
JP5685020B2 (ja) * 2010-07-23 2015-03-18 住友電気工業株式会社 半導体装置の製造方法
JP2013149851A (ja) * 2012-01-20 2013-08-01 Sharp Corp 窒化物半導体装置
JP6197344B2 (ja) 2013-04-18 2017-09-20 住友電気工業株式会社 半導体装置
JP6194869B2 (ja) * 2014-09-26 2017-09-13 豊田合成株式会社 半導体装置およびその製造方法
JP6838257B2 (ja) * 2017-01-06 2021-03-03 住友電工デバイス・イノベーション株式会社 半導体装置
CN112382662B (zh) * 2020-11-13 2022-06-21 宁波铼微半导体有限公司 氮化镓增强型器件及其制造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02310370A (ja) * 1989-05-23 1990-12-26 Toshiba Corp 摺動部材
JPH05335345A (ja) * 1992-05-29 1993-12-17 Sharp Corp 半導体素子の表面保護膜
JP3686582B2 (ja) * 2000-11-21 2005-08-24 シャープ株式会社 窒化シリコン固体表面保護膜
JP4385206B2 (ja) * 2003-01-07 2009-12-16 日本電気株式会社 電界効果トランジスタ
JP4179539B2 (ja) * 2003-01-15 2008-11-12 富士通株式会社 化合物半導体装置及びその製造方法
JP5216184B2 (ja) * 2004-12-07 2013-06-19 富士通株式会社 化合物半導体装置およびその製造方法
JP4912604B2 (ja) * 2005-03-30 2012-04-11 住友電工デバイス・イノベーション株式会社 窒化物半導体ｈｅｍｔおよびその製造方法。
WO2007007589A1 (ja) * 2005-07-08 2007-01-18 Nec Corporation 電界効果トランジスタおよびその製造方法
JP4897948B2 (ja) * 2005-09-02 2012-03-14 古河電気工業株式会社 半導体素子

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