JP5420157B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
- Publication number
- JP5420157B2 JP5420157B2 JP2007152494A JP2007152494A JP5420157B2 JP 5420157 B2 JP5420157 B2 JP 5420157B2 JP 2007152494 A JP2007152494 A JP 2007152494A JP 2007152494 A JP2007152494 A JP 2007152494A JP 5420157 B2 JP5420157 B2 JP 5420157B2
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- Prior art keywords
- silicon nitride
- nitride film
- gan
- refractive index
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 title claims description 33
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 54
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 54
- 238000010438 heat treatment Methods 0.000 claims description 21
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 38
- 229910002601 GaN Inorganic materials 0.000 description 37
- 238000000034 method Methods 0.000 description 14
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 7
- 239000001301 oxygen Substances 0.000 description 7
- 229910052760 oxygen Inorganic materials 0.000 description 7
- 239000010931 gold Substances 0.000 description 6
- 229910002704 AlGaN Inorganic materials 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
Images
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Junction Field-Effect Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007152494A JP5420157B2 (ja) | 2007-06-08 | 2007-06-08 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007152494A JP5420157B2 (ja) | 2007-06-08 | 2007-06-08 | 半導体装置の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008306025A JP2008306025A (ja) | 2008-12-18 |
| JP2008306025A5 JP2008306025A5 (enrdf_load_stackoverflow) | 2010-06-17 |
| JP5420157B2 true JP5420157B2 (ja) | 2014-02-19 |
Family
ID=40234458
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007152494A Active JP5420157B2 (ja) | 2007-06-08 | 2007-06-08 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5420157B2 (enrdf_load_stackoverflow) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4794655B2 (ja) * | 2009-06-09 | 2011-10-19 | シャープ株式会社 | 電界効果トランジスタ |
| JP5685020B2 (ja) * | 2010-07-23 | 2015-03-18 | 住友電気工業株式会社 | 半導体装置の製造方法 |
| JP2013149851A (ja) * | 2012-01-20 | 2013-08-01 | Sharp Corp | 窒化物半導体装置 |
| JP6197344B2 (ja) | 2013-04-18 | 2017-09-20 | 住友電気工業株式会社 | 半導体装置 |
| JP6194869B2 (ja) * | 2014-09-26 | 2017-09-13 | 豊田合成株式会社 | 半導体装置およびその製造方法 |
| JP6838257B2 (ja) * | 2017-01-06 | 2021-03-03 | 住友電工デバイス・イノベーション株式会社 | 半導体装置 |
| CN112382662B (zh) * | 2020-11-13 | 2022-06-21 | 宁波铼微半导体有限公司 | 氮化镓增强型器件及其制造方法 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02310370A (ja) * | 1989-05-23 | 1990-12-26 | Toshiba Corp | 摺動部材 |
| JPH05335345A (ja) * | 1992-05-29 | 1993-12-17 | Sharp Corp | 半導体素子の表面保護膜 |
| JP3686582B2 (ja) * | 2000-11-21 | 2005-08-24 | シャープ株式会社 | 窒化シリコン固体表面保護膜 |
| JP4385206B2 (ja) * | 2003-01-07 | 2009-12-16 | 日本電気株式会社 | 電界効果トランジスタ |
| JP4179539B2 (ja) * | 2003-01-15 | 2008-11-12 | 富士通株式会社 | 化合物半導体装置及びその製造方法 |
| JP5216184B2 (ja) * | 2004-12-07 | 2013-06-19 | 富士通株式会社 | 化合物半導体装置およびその製造方法 |
| JP4912604B2 (ja) * | 2005-03-30 | 2012-04-11 | 住友電工デバイス・イノベーション株式会社 | 窒化物半導体ｈｅｍｔおよびその製造方法。 |
| JPWO2007007589A1 (ja) * | 2005-07-08 | 2009-01-29 | 日本電気株式会社 | 電界効果トランジスタおよびその製造方法 |
| JP4897948B2 (ja) * | 2005-09-02 | 2012-03-14 | 古河電気工業株式会社 | 半導体素子 |
-
2007
- 2007-06-08 JP JP2007152494A patent/JP5420157B2/ja active Active
Also Published As
| Publication number | Publication date |
|---|---|
| JP2008306025A (ja) | 2008-12-18 |
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