JP5405562B2 - 処理チャンバ内で物体を焼き戻しするための装置および方法 - Google Patents

処理チャンバ内で物体を焼き戻しするための装置および方法 Download PDF

Info

Publication number
JP5405562B2
JP5405562B2 JP2011507838A JP2011507838A JP5405562B2 JP 5405562 B2 JP5405562 B2 JP 5405562B2 JP 2011507838 A JP2011507838 A JP 2011507838A JP 2011507838 A JP2011507838 A JP 2011507838A JP 5405562 B2 JP5405562 B2 JP 5405562B2
Authority
JP
Japan
Prior art keywords
processing
chamber
space
gas
hood
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2011507838A
Other languages
English (en)
Japanese (ja)
Other versions
JP2011520273A (ja
Inventor
パルム，イエルク
バウムバハ，イエルク
カルク，フランツ
フユーアフアンガー，マルテイン
Original Assignee
サン−ゴバン グラス フランス エス アー
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by サン−ゴバン グラス フランス エス アー filed Critical サン−ゴバン グラス フランス エス アー
Publication of JP2011520273A publication Critical patent/JP2011520273A/ja
Application granted granted Critical
Publication of JP5405562B2 publication Critical patent/JP5405562B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B17/00—Furnaces of a kind not covered by any preceding group
    • F27B17/0016—Chamber type furnaces
    • F27B17/0025—Especially adapted for treating semiconductor wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1864—Annealing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnetism (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Toxicology (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
  • Photovoltaic Devices (AREA)
  • Heat Treatment Of Articles (AREA)
  • Physical Vapour Deposition (AREA)
JP2011507838A 2008-05-08 2009-05-08 処理チャンバ内で物体を焼き戻しするための装置および方法 Active JP5405562B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102008022784.6 2008-05-08
DE102008022784A DE102008022784A1 (de) 2008-05-08 2008-05-08 Vorrichtung und Verfahren zum Tempern von Gegenständen in einer Behandlungskammer
PCT/EP2009/003301 WO2009135685A2 (de) 2008-05-08 2009-05-08 Vorrichtung und verfahren zum tempern von gegenständen in einer behandlungskammer

Publications (2)

Publication Number Publication Date
JP2011520273A JP2011520273A (ja) 2011-07-14
JP5405562B2 true JP5405562B2 (ja) 2014-02-05

Family

ID=41152640

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011507838A Active JP5405562B2 (ja) 2008-05-08 2009-05-08 処理チャンバ内で物体を焼き戻しするための装置および方法

Country Status (8)

Country Link
US (1) US20110117693A1 (de)
EP (1) EP2291868B1 (de)
JP (1) JP5405562B2 (de)
KR (1) KR101343149B1 (de)
CN (1) CN102165607B (de)
DE (1) DE102008022784A1 (de)
ES (1) ES2804758T3 (de)
WO (1) WO2009135685A2 (de)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2368860A1 (de) 2010-03-01 2011-09-28 Saint-Gobain Glass France Vorrichtung und Verfahren zur Substratprozessierung
DE102010018595A1 (de) 2010-04-27 2011-10-27 Centrothem Photovoltaics Ag Verfahren zur Herstellung einer Verbindungshalbleiterschicht
DE102010035569A1 (de) * 2010-08-26 2012-03-01 Centrotherm Photovoltaics Ag Durchlaufofen
JP5836379B2 (ja) 2010-08-27 2015-12-24 サン−ゴバン グラス フランス 複数の多層体を熱処理するための装置および方法
DE202011109510U1 (de) * 2011-12-23 2013-01-18 Singulus Stangl Solar Gmbh Prozesshaube für flache Substrate und Anlage zur einseitigen Behandlung flacher Substrate
KR101680950B1 (ko) 2012-02-16 2016-11-29 쌩-고벵 글래스 프랑스 코팅된 기판을 처리하기 위한 처리 박스, 장치 및 방법
US20130213478A1 (en) * 2012-02-21 2013-08-22 Aqt Solar, Inc. Enhancing the Photovoltaic Response of CZTS Thin-Films
CN104247036A (zh) 2012-04-27 2014-12-24 法国圣戈班玻璃厂 用于产生掺杂有钠的五元化合物半导体cztsse的方法
TWI492407B (zh) * 2012-05-24 2015-07-11 Sunshine Pv Corp 薄膜太陽能電池的退火裝置
TWI492406B (zh) * 2012-05-24 2015-07-11 Sunshine Pv Corp 薄膜太陽能電池的退火裝置
TWI481057B (zh) * 2012-05-24 2015-04-11 Sunshine Pv Corp 薄膜太陽能電池的退火裝置
WO2014009386A1 (de) 2012-07-09 2014-01-16 Saint-Gobain Glass France Prozessbox, anordnung und verfahren zum prozessieren eines beschichteten substrats
KR101720438B1 (ko) 2012-07-09 2017-03-27 쌩-고벵 글래스 프랑스 물체를 열처리하기 위한 장치 및 방법
CN104937706B (zh) 2012-07-09 2019-02-26 蚌埠玻璃工业设计研究院 用于处理衬底的设备和方法
WO2014013042A1 (de) 2012-07-19 2014-01-23 Saint-Gobain Glass France Vermeidung von glasverbiegung bei thermischen verfahren
DE102012022067A1 (de) 2012-11-09 2014-05-15 Centrotherm Photovoltaics Ag Substrathalter sowie eine vorrichtung und ein verfahren zum behandeln von substraten
DE102012224500A1 (de) 2012-12-28 2014-07-03 Singulus Technologies Ag Hochtemperatur-Diffusionskammer
JP6236866B2 (ja) * 2013-05-15 2017-11-29 住友電気工業株式会社 ガラス微粒子堆積体の製造方法およびガラス微粒子堆積体製造用バーナー
TWI550717B (zh) 2014-08-25 2016-09-21 新能光電科技股份有限公司 熱處理方法及其所製得之產物
KR101577906B1 (ko) * 2014-08-29 2015-12-16 에스엔유 프리시젼 주식회사 Cigs 박막 급속 열처리 장치
CN105063316B (zh) * 2015-08-06 2017-10-24 贵州航天电子科技有限公司 一种安全执行机构杆的热处理方法
DE102015016002A1 (de) * 2015-12-10 2017-06-14 Centrotherm Photovoltaics Ag Verfahren und Vorrichtung zum thermischen Behandeln von Substraten sowie Aufnahmeeinheit für Substrate
WO2017116905A1 (en) 2015-12-30 2017-07-06 Mattson Technology, Inc. Gas flow control for millisecond anneal system
DE102016015502A1 (de) 2016-12-23 2018-06-28 Singulus Technologies Ag Verfahren und Vorrichtung zur thermischen Behandlung beschichteter Substrate, insbesondere von Dünnschicht-Solarsubstraten
JPWO2020203517A1 (de) * 2019-03-29 2020-10-08
CN117083698A (zh) * 2022-06-23 2023-11-17 中建材玻璃新材料研究院集团有限公司 腐蚀性气体中金属基体的节能热处理装置

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3586847T2 (de) * 1985-03-22 1993-05-19 Siemens Solar Ind Lp Herstellungsverfahren eines zusammengesetzten halbleiters.
US4798660A (en) 1985-07-16 1989-01-17 Atlantic Richfield Company Method for forming Cu In Se2 films
WO1994007269A1 (de) 1992-09-22 1994-03-31 Siemens Aktiengesellschaft Schnelles verfahren zur erzeugung eines chalkopyrit-halbleiters auf einem substrat
US5567151A (en) * 1994-10-21 1996-10-22 Senju Metal Industry Company Limited Reflow furnaces with hot air blow type heaters
JP2000236105A (ja) * 1999-02-16 2000-08-29 Fuji Electric Co Ltd 薄膜太陽電池の製造方法および装置
DE19936081A1 (de) 1999-07-30 2001-02-08 Siemens Ag Vorrichtung und Verfahren zum Temperieren eines Mehrschichtkörpers, sowie ein unter Anwendung des Verfahrens hergestellter Mehrschichtkörper
ATE481740T1 (de) * 1999-10-20 2010-10-15 Saint Gobain Vorrichtung und verfahren zum temperieren mindestens eines prozessierguts
US6753506B2 (en) * 2001-08-23 2004-06-22 Axcelis Technologies System and method of fast ambient switching for rapid thermal processing
JP3675751B2 (ja) * 2001-10-04 2005-07-27 財団法人北九州産業学術推進機構 炉材用耐火物および炉ならびに炉壁の表面処理方法
JP4371260B2 (ja) 2003-12-01 2009-11-25 大日本スクリーン製造株式会社 熱処理装置
US20070111367A1 (en) * 2005-10-19 2007-05-17 Basol Bulent M Method and apparatus for converting precursor layers into photovoltaic absorbers
DE102005062977B3 (de) * 2005-12-28 2007-09-13 Sulfurcell Solartechnik Gmbh Verfahren und Vorrichtung zur Umsetzung metallischer Vorläuferschichten zu Chalkopyritschichten von CIGSS-solarzellen
KR100749027B1 (ko) * 2006-06-23 2007-08-13 주식회사 포스코 용융 몰드플럭스를 이용한 연속 주조 장치 및 방법
US7977258B2 (en) * 2007-04-06 2011-07-12 Mattson Technology, Inc. Method and system for thermally processing a plurality of wafer-shaped objects

Also Published As

Publication number Publication date
KR20110021859A (ko) 2011-03-04
EP2291868B1 (de) 2020-04-22
CN102165607A (zh) 2011-08-24
WO2009135685A2 (de) 2009-11-12
JP2011520273A (ja) 2011-07-14
CN102165607B (zh) 2016-04-06
EP2291868A2 (de) 2011-03-09
WO2009135685A3 (de) 2011-03-17
US20110117693A1 (en) 2011-05-19
DE102008022784A1 (de) 2009-11-12
ES2804758T3 (es) 2021-02-09
KR101343149B1 (ko) 2013-12-19

Similar Documents

Publication Publication Date Title
JP5405562B2 (ja) 処理チャンバ内で物体を焼き戻しするための装置および方法
US9352431B2 (en) Device for forming a reduced chamber space, and method for positioning multilayer bodies
US9236282B2 (en) Arrangement, system, and method for processing multilayer bodies
US20140060435A1 (en) Doors for high volume, low cost system for epitaxial silicon deposition
JP5933837B2 (ja) 基板を処理するためのシステムと方法
KR101590684B1 (ko) 복수의 다층체를 열처리하기 위한 장치 및 방법
KR101801452B1 (ko) 코팅된 기판을 가공하기 위한 가공 상자, 조립체 및 방법
US10163670B2 (en) Device and method for heat treating an object
US20130059431A1 (en) Device and method for substrate processing

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20111117

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20130222

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20130306

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20130604

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20130611

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130905

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20131001

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20131030

R150 Certificate of patent or registration of utility model

Ref document number: 5405562

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313113

S533 Written request for registration of change of name

Free format text: JAPANESE INTERMEDIATE CODE: R313533

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250