JP5404000B2 - 半導体モジュールおよび撮像装置 - Google Patents
半導体モジュールおよび撮像装置 Download PDFInfo
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- JP5404000B2 JP5404000B2 JP2008281950A JP2008281950A JP5404000B2 JP 5404000 B2 JP5404000 B2 JP 5404000B2 JP 2008281950 A JP2008281950 A JP 2008281950A JP 2008281950 A JP2008281950 A JP 2008281950A JP 5404000 B2 JP5404000 B2 JP 5404000B2
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
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- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49175—Parallel arrangements
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- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06555—Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking
- H01L2225/06562—Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking at least one device in the stack being rotated or offset
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
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- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
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- H—ELECTRICITY
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Description
手振れのない場合には、撮像装置に角速度が生じないため、ジャイロイコライザ24の出力する信号は“0”となる。VCM80によって駆動されるレンズ60の位置は、その光軸と撮像装置に備えられるCCDなどの撮像素子(図示せず)の中心が一致するため、ホール素子70および増幅回路14によるアナログの位置信号は、ADC22により“0”を示すデジタルの位置信号に変換された後、ホールイコライザ40に出力される。サーボ回路44は、位置信号の値が“0”のとき、現在のレンズ60の位置を維持するようにVCM80を制御する信号を出力する。
VCM80によって駆動されるレンズ60の位置は、その光軸と撮像装置に備えられる撮像素子の中心が一致するため、ホール素子70および増幅回路14によるアナログの位置信号は、ADC22により“0”を示すデジタルの位置信号に変換された後、ホールイコライザ40に出力される。
ないという課題を光学式手振れ補正は解決できるという効果を有する。特に、高画質ビデオの映像から静止画を取り出す場合は、光学式手振れ補正が有効である。
ディングワイヤ134を介して、第1の配線層114に設けられた基板電極118bと電気的に接続されている。また、第2の半導体素子130には、電流出力用電極132の他に、他の半導体素子との信号の入出力に用いられるチップ電極136が設けられている。チップ電極136は、金線などのボンディングワイヤ137を介して、第1の配線層114に設けられた基板電極118cと電気的に接続されている。なお、ボンディングワイヤ124、134、137による結線は、第1の半導体素子120を配線基板110に搭載し、さらに、第1の半導体素子120の上に第2の半導体素子130を搭載した後に実施することができる。
ができる。
なお、上述の実施の形態においては、配線基板110と、その表面に設けられた第1の配線層114、第2の配線層116及び半田ボール160を用いた場合の例を示したが、本願は、それらに代えて、金属からなるリードフレームを用いても同様の効果を奏することができる。
センサ、60 レンズ、70 ホール素子、80 VCM、100 半導体モジュール、110 配線基板、120 第1の半導体素子、130 第2の半導体素子、140 第3の半導体素子、150 封止樹脂、160 はんだボール。
Claims (5)
- 一方の主表面に基板電極が設けられた配線基板と、
前記配線基板に搭載され、ロジック信号を入力または出力するためのロジック信号用電極を有する第1の半導体素子と、
前記第1の半導体素子の上に搭載され、大電流を出力するための電流出力用電極を有する第2の半導体素子と、
前記ロジック信号用電極とこれに対応する前記基板電極とを電気的に接続する第1のボンディングワイヤと、
前記電流出力用電極とこれに対応する前記基板電極とを電気的に接続する第2のボンディングワイヤと、
前記第1の半導体素子と前記配線基板の上に並設して搭載されたメモリ素子と、
を備え、
前記第2の半導体素子の一辺が、当該一辺と対応する前記第1の半導体素子の一辺の上方においてせり出しており、
前記電流出力用電極が前記第2の半導体素子が前記第1の半導体素子からせり出した領域のみに形成されており、
前記ロジック信号用電極は、前記第1の半導体素子に対してせり出していない前記第2の半導体素子の辺と対応する前記第1の半導体素子の辺に沿ってのみ設けられており、
前記配線基板の前記主表面側から見て、前記メモリ素子は、前記第2のボンディングワイヤが横切る前記第2の半導体素子の辺の対辺側に位置していることを特徴とする半導体モジュール。 - 前記メモリ素子は、前記配線基板の角部近傍に設けられていることを特徴とする請求項1に記載の半導体モジュール。
- 前記第1の半導体素子は、撮像装置の手振れ補正用の手振れ補正信号を出力し、
前記第2の半導体素子は、前記手振れ補正信号に従って前記撮像装置のレンズを駆動する駆動手段に供される大電流を出力することを特徴とする請求項1または2に記載の半導体モジュール。 - 前記駆動手段は、ボイスコイルモータであることを特徴とする請求項3に記載の半導体モジュール。
- 請求項1乃至4のいずれか1項に記載の半導体モジュールを備えることを特徴とする撮像装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008281950A JP5404000B2 (ja) | 2007-11-14 | 2008-10-31 | 半導体モジュールおよび撮像装置 |
TW097143468A TWI442544B (zh) | 2007-11-14 | 2008-11-11 | 半導體模組及攝像裝置 |
CN2008101753915A CN101436589B (zh) | 2007-11-14 | 2008-11-12 | 半导体模块及摄像装置 |
KR1020080113217A KR101003568B1 (ko) | 2007-11-14 | 2008-11-14 | 반도체 모듈 및 촬상 장치 |
US12/271,459 US20090127694A1 (en) | 2007-11-14 | 2008-11-14 | Semiconductor module and image pickup apparatus |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007296146 | 2007-11-14 | ||
JP2007296146 | 2007-11-14 | ||
JP2008281950A JP5404000B2 (ja) | 2007-11-14 | 2008-10-31 | 半導体モジュールおよび撮像装置 |
Publications (2)
Publication Number | Publication Date |
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JP2009141330A JP2009141330A (ja) | 2009-06-25 |
JP5404000B2 true JP5404000B2 (ja) | 2014-01-29 |
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JP2008281950A Expired - Fee Related JP5404000B2 (ja) | 2007-11-14 | 2008-10-31 | 半導体モジュールおよび撮像装置 |
Country Status (3)
Country | Link |
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JP (1) | JP5404000B2 (ja) |
CN (1) | CN101436589B (ja) |
TW (1) | TWI442544B (ja) |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000081646A (ja) * | 1998-06-26 | 2000-03-21 | Ricoh Co Ltd | 手振れ補正機能付きカメラ |
JP2002057270A (ja) * | 2000-08-08 | 2002-02-22 | Sharp Corp | チップ積層型半導体装置 |
JP2004158536A (ja) * | 2002-11-05 | 2004-06-03 | Fujitsu Ltd | 半導体装置及び半導体装置の製造方法 |
JP4580730B2 (ja) * | 2003-11-28 | 2010-11-17 | ルネサスエレクトロニクス株式会社 | オフセット接合型マルチチップ半導体装置 |
JP4103796B2 (ja) * | 2003-12-25 | 2008-06-18 | 沖電気工業株式会社 | 半導体チップパッケージ及びマルチチップパッケージ |
JP4509052B2 (ja) * | 2005-03-29 | 2010-07-21 | 三洋電機株式会社 | 回路装置 |
JP4748648B2 (ja) * | 2005-03-31 | 2011-08-17 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP4756932B2 (ja) * | 2005-06-27 | 2011-08-24 | キヤノン株式会社 | 撮像装置及び交換レンズ |
KR100665217B1 (ko) * | 2005-07-05 | 2007-01-09 | 삼성전기주식회사 | 반도체 멀티칩 패키지 |
-
2008
- 2008-10-31 JP JP2008281950A patent/JP5404000B2/ja not_active Expired - Fee Related
- 2008-11-11 TW TW097143468A patent/TWI442544B/zh not_active IP Right Cessation
- 2008-11-12 CN CN2008101753915A patent/CN101436589B/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2009141330A (ja) | 2009-06-25 |
TW200931635A (en) | 2009-07-16 |
CN101436589A (zh) | 2009-05-20 |
CN101436589B (zh) | 2012-05-30 |
TWI442544B (zh) | 2014-06-21 |
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