JP5398740B2 - メモリ・セルおよびメモリ・デバイス - Google Patents
メモリ・セルおよびメモリ・デバイス Download PDFInfo
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- JP5398740B2 JP5398740B2 JP2010542718A JP2010542718A JP5398740B2 JP 5398740 B2 JP5398740 B2 JP 5398740B2 JP 2010542718 A JP2010542718 A JP 2010542718A JP 2010542718 A JP2010542718 A JP 2010542718A JP 5398740 B2 JP5398740 B2 JP 5398740B2
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- ferromagnetic
- memory cell
- resistance switching
- switching material
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- 230000005294 ferromagnetic effect Effects 0.000 claims description 97
- 239000000463 material Substances 0.000 claims description 69
- 230000008878 coupling Effects 0.000 claims description 43
- 238000010168 coupling process Methods 0.000 claims description 43
- 238000005859 coupling reaction Methods 0.000 claims description 43
- 230000005415 magnetization Effects 0.000 claims description 43
- 230000005291 magnetic effect Effects 0.000 claims description 35
- 125000006850 spacer group Chemical group 0.000 claims description 27
- 150000002500 ions Chemical class 0.000 claims description 16
- 229910000314 transition metal oxide Inorganic materials 0.000 claims description 14
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 11
- 229910052746 lanthanum Inorganic materials 0.000 claims description 10
- 229910052712 strontium Inorganic materials 0.000 claims description 10
- 230000005290 antiferromagnetic effect Effects 0.000 claims description 9
- 239000011651 chromium Substances 0.000 claims description 8
- 229910052804 chromium Inorganic materials 0.000 claims description 7
- 229910052720 vanadium Inorganic materials 0.000 claims description 7
- 206010021143 Hypoxia Diseases 0.000 claims description 6
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 6
- 230000007704 transition Effects 0.000 claims description 5
- 239000002800 charge carrier Substances 0.000 claims description 4
- 239000012212 insulator Substances 0.000 claims description 3
- 230000002441 reversible effect Effects 0.000 claims description 3
- 229910052723 transition metal Inorganic materials 0.000 claims description 3
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 2
- 239000010936 titanium Substances 0.000 claims 2
- 229910052719 titanium Inorganic materials 0.000 claims 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 1
- 229910017052 cobalt Inorganic materials 0.000 claims 1
- 239000010941 cobalt Substances 0.000 claims 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 claims 1
- 239000010949 copper Substances 0.000 claims 1
- 229910052742 iron Inorganic materials 0.000 claims 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- 150000003624 transition metals Chemical group 0.000 claims 1
- 239000001301 oxygen Substances 0.000 description 18
- 229910052760 oxygen Inorganic materials 0.000 description 18
- 238000000034 method Methods 0.000 description 13
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 12
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 9
- 230000008859 change Effects 0.000 description 7
- -1 oxygen ion Chemical class 0.000 description 7
- 230000000694 effects Effects 0.000 description 5
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 5
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 5
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000003302 ferromagnetic material Substances 0.000 description 4
- 238000013459 approach Methods 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 229910052791 calcium Inorganic materials 0.000 description 3
- 239000011575 calcium Substances 0.000 description 3
- 230000001747 exhibiting effect Effects 0.000 description 3
- 230000010355 oscillation Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 2
- 239000002885 antiferromagnetic material Substances 0.000 description 2
- UOUJSJZBMCDAEU-UHFFFAOYSA-N chromium(3+);oxygen(2-) Chemical class [O-2].[O-2].[O-2].[Cr+3].[Cr+3] UOUJSJZBMCDAEU-UHFFFAOYSA-N 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 229910000480 nickel oxide Inorganic materials 0.000 description 2
- 230000003534 oscillatory effect Effects 0.000 description 2
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 229910052761 rare earth metal Inorganic materials 0.000 description 2
- 229910052727 yttrium Inorganic materials 0.000 description 2
- 229910003040 (La,Sr)MnO3-δ Inorganic materials 0.000 description 1
- 229910003039 (La,Sr)MnO3−δ Inorganic materials 0.000 description 1
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 1
- 229910002551 Fe-Mn Inorganic materials 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- MIQCYQOWOLNWJX-UHFFFAOYSA-N [O--].[O--].[Mn++].[Sr++] Chemical class [O--].[O--].[Mn++].[Sr++] MIQCYQOWOLNWJX-UHFFFAOYSA-N 0.000 description 1
- SAXPPRUNTRNAIO-UHFFFAOYSA-N [O-2].[O-2].[Ca+2].[Mn+2] Chemical compound [O-2].[O-2].[Ca+2].[Mn+2] SAXPPRUNTRNAIO-UHFFFAOYSA-N 0.000 description 1
- ZZKJWFIDCGZDGC-UHFFFAOYSA-N [Re]=O.[Cr] Chemical compound [Re]=O.[Cr] ZZKJWFIDCGZDGC-UHFFFAOYSA-N 0.000 description 1
- YTIJDAPISUYFHF-UHFFFAOYSA-N [Re]=O.[Fe] Chemical compound [Re]=O.[Fe] YTIJDAPISUYFHF-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 230000006399 behavior Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910001431 copper ion Inorganic materials 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 239000010431 corundum Substances 0.000 description 1
- 230000005292 diamagnetic effect Effects 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- HZNPCLUBXJLRAA-UHFFFAOYSA-N iron;oxomolybdenum Chemical compound [Fe].[Mo]=O HZNPCLUBXJLRAA-UHFFFAOYSA-N 0.000 description 1
- SVHYQQLGPHVQFY-UHFFFAOYSA-N iron;oxotungsten Chemical compound [Fe].[W]=O SVHYQQLGPHVQFY-UHFFFAOYSA-N 0.000 description 1
- 229910001416 lithium ion Inorganic materials 0.000 description 1
- 230000005381 magnetic domain Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000001151 other effect Effects 0.000 description 1
- SOQBVABWOPYFQZ-UHFFFAOYSA-N oxygen(2-);titanium(4+) Chemical class [O-2].[O-2].[Ti+4] SOQBVABWOPYFQZ-UHFFFAOYSA-N 0.000 description 1
- 230000005298 paramagnetic effect Effects 0.000 description 1
- 229910000889 permalloy Inorganic materials 0.000 description 1
- PUDIUYLPXJFUGB-UHFFFAOYSA-N praseodymium atom Chemical compound [Pr] PUDIUYLPXJFUGB-UHFFFAOYSA-N 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1673—Reading or sensing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1675—Writing or programming circuits or methods
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
- H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
- H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
- H10N70/245—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies the species being metal cations, e.g. programmable metallization cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/883—Oxides or nitrides
- H10N70/8833—Binary metal oxides, e.g. TaOx
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/883—Oxides or nitrides
- H10N70/8836—Complex metal oxides, e.g. perovskites, spinels
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Semiconductor Memories (AREA)
- Hall/Mr Elements (AREA)
Description
(i)材料選択:硬質層材料は、軟質層材料よりも高い保磁度を有するように選択することができる。
(ii)磁気モーメント・エンジニアリング:硬質層は、反強磁性的に結合された複数の強磁性層を備えることが可能であり、その磁化方向は逆並列であるため、結果として合計の最終磁気モーメントは小さい。
(iii)反強磁性体によるピン止め:反強磁性体(Fe−Mnなど)と直接接触している強磁性体層の磁化方向は、変更がより困難である(ピン止めは、それぞれの「硬質」層の磁化の長期間にわたる消失を防止するような、長期使用の観点においても有利な可能性がある)。
(iv)誘導異方性:強磁性層が何らかの格子不整合を伴って層の上部に生成される場合、磁気歪みが強磁性体の異方性に寄与する可能性がある。
(v)異なる有効磁場:第1の強磁性層の場合、ピン止めは、単に第1の強磁性層を磁場にさらさないようにすることによって達成することができる。これが可能であるのは、本発明に従った手法により、書き込みプロセスに交換カップリングのみが使用され、物理的な磁場は使用されないためである。交換カップリングは極端に短距離であり、第3と第2の強磁性層間の交換カップリングが、第1の強磁性層に影響を与えることはない。
Claims (11)
- 不揮発性メモリ・セルであって、
確定した磁化方向を有する第1の強磁性層と、
磁化方向を有する第2の強磁性層と、
前記第1および第2の強磁性層との間に非磁性スペーサ層と、
確定した磁化方向を有する第3の強磁性層と、
前記第2の強磁性層および前記第3の強磁性層との間の抵抗切り替え材料とを含み、
前記第1および第2の強磁性層の前記磁化方向の相対配向は、格納された情報の値を定義するものであり、
前記抵抗切り替え材料は、印加された電気的な電圧信号によって異なるキャリア密度状態間で逆方向に切り替え可能な電荷キャリア密度を有し、
前記異なるキャリア密度状態は前記第2の強磁性層および前記第3の強磁性層の間で強磁性および反強磁性の磁気交換カップリングを発生させて、前記第2の強磁性層の異なる磁化方向を発生させることを特徴とし、
前記メモリ・セルのうちの少なくとも1つの層は前記電圧信号の極性に応じて、前記抵抗切り替え材料からイオンを受け入れること、および前記抵抗切り替え材料内へイオンを解放することが可能なイオン導電層であり、前記イオン導電層が前記抵抗切り替え材料と接触する、不揮発性メモリ・セル。 - 前記イオン導電層が、前記第3の強磁性層、前記第2の強磁性層、および金属中間層のうちの少なくとも1つである、請求項1に記載のメモリ・セル。
- 前記抵抗切り替え材料が遷移金属酸化物である、前記請求項のいずれか一項に記載のメモリ・セル。
- 前記遷移金属酸化物がフィリング制御金属・絶縁体転移を備える、請求項3に記載のメモリ・セル。
- 前記抵抗切り替え材料が、チタン、バナジウム、クロム、マンガン、鉄、コバルト、ニッケル、および銅のうちの、少なくとも1つを備える酸化物を備える、請求項4に記載のメモリ・セル。
- 前記抵抗切り替え材料が、TiO1−δ、V2O3−δ、NiO1−δ、Cr2O3−δ、および(La,Sr)BO3−δ、のうちの1つであって、Bはたとえばチタンなどの遷移金属、δは第1および第2の状態で異なる0≦δ<1の数である、請求項3に記載のメモリ・セル。
- 前記イオン導電層の材料が少なくとも10−9cm2/Vの酸素欠損移動度を示す、請求項4に記載のメモリ・セル。
- 前記抵抗切り替え材料が少なくとも10−9cm2/Vの酸素欠損移動度を示す、請求項3に記載のメモリ・セル。
- 第1、第2、および第3の接点を備え、前記第1のスペーサ層全体にわたるトンネル抵抗が、前記第1および前記第2の接点間に電流を通すことによって測定可能であり、前記第2および前記第3の接点間に電圧パルスを印加可能である、請求項1に記載のメモリ・セル。
- 請求項1に従った複数のメモリ・セルを備える、メモリ・デバイス。
- 請求項9に従った複数のメモリ・セルを備える、メモリ・デバイス。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP08100565.4 | 2008-01-16 | ||
EP08100565 | 2008-01-16 | ||
PCT/IB2009/050130 WO2009090605A1 (en) | 2008-01-16 | 2009-01-14 | Memory cell, and memory device |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011512024A JP2011512024A (ja) | 2011-04-14 |
JP5398740B2 true JP5398740B2 (ja) | 2014-01-29 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2010542718A Expired - Fee Related JP5398740B2 (ja) | 2008-01-16 | 2009-01-14 | メモリ・セルおよびメモリ・デバイス |
Country Status (6)
Country | Link |
---|---|
US (1) | US7825486B2 (ja) |
EP (1) | EP2245631B1 (ja) |
JP (1) | JP5398740B2 (ja) |
KR (1) | KR20100101654A (ja) |
CN (1) | CN101911204A (ja) |
WO (1) | WO2009090605A1 (ja) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
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US8735858B2 (en) * | 2010-04-30 | 2014-05-27 | Hewlett-Packard Development Company, L.P. | Ionic devices with interacting species |
JP5622769B2 (ja) | 2012-03-08 | 2014-11-12 | 株式会社東芝 | 半導体装置 |
US9799825B2 (en) | 2014-03-14 | 2017-10-24 | Massachusetts Institute Of Technology | Voltage regulation of device functional properties |
US10460804B2 (en) | 2014-03-14 | 2019-10-29 | Massachusetts Institute Of Technology | Voltage-controlled resistive devices |
DE102016004816A1 (de) | 2016-04-21 | 2017-10-26 | Universität Kassel | Magnetoelektrischer Speicher zur Speicherung digitaler Daten |
US10283611B2 (en) | 2016-09-27 | 2019-05-07 | Industry-Academic Cooperation Foundation, Yonsei University | Electronic device including topological insulator and transition metal oxide |
GB2557923B (en) * | 2016-12-16 | 2020-10-14 | Ip2Ipo Innovations Ltd | Non-volatile memory |
US11482669B2 (en) * | 2019-09-10 | 2022-10-25 | Globalfoundries Singapore Pte. Ltd. | Memory device and a method for forming the memory device |
US20240147873A1 (en) * | 2022-11-01 | 2024-05-02 | International Business Machines Corporation | Piezoelectric memory |
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2009
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- 2009-01-14 EP EP09702102.6A patent/EP2245631B1/en active Active
- 2009-01-14 WO PCT/IB2009/050130 patent/WO2009090605A1/en active Application Filing
- 2009-01-14 US US12/353,315 patent/US7825486B2/en not_active Expired - Fee Related
- 2009-01-14 CN CN2009801023258A patent/CN101911204A/zh active Pending
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JP2011512024A (ja) | 2011-04-14 |
US20090179245A1 (en) | 2009-07-16 |
CN101911204A (zh) | 2010-12-08 |
WO2009090605A1 (en) | 2009-07-23 |
EP2245631B1 (en) | 2015-08-05 |
KR20100101654A (ko) | 2010-09-17 |
US7825486B2 (en) | 2010-11-02 |
EP2245631A1 (en) | 2010-11-03 |
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