JP5389645B2 - 絶縁および離散化プロセスのシーケンスの統合のための方法およびシステム - Google Patents
絶縁および離散化プロセスのシーケンスの統合のための方法およびシステム Download PDFInfo
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- JP5389645B2 JP5389645B2 JP2009520905A JP2009520905A JP5389645B2 JP 5389645 B2 JP5389645 B2 JP 5389645B2 JP 2009520905 A JP2009520905 A JP 2009520905A JP 2009520905 A JP2009520905 A JP 2009520905A JP 5389645 B2 JP5389645 B2 JP 5389645B2
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- H—ELECTRICITY
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- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
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- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
- H01L21/67225—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one lithography chamber
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67236—Apparatus for manufacturing or treating in a plurality of work-stations the substrates being processed being not semiconductor wafers, e.g. leadframes or chips
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67742—Mechanical parts of transfer devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68707—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a robot blade, or gripped by a gripper for conveyance
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- Chemical Kinetics & Catalysis (AREA)
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- Physical Vapour Deposition (AREA)
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Description
Claims (15)
- クラスタツール内で基板を処理するための方法であって、
前記基板を受容するステップと
連続式および並行式の組み合わせで、前記基板の複数領域を逐次的に処理する一方、前記逐次処理間のマスクを空間的に変更するステップであって、前記逐次処理は、前記クラスタツール内で行われることによって、悪環境を回避する、ステップと、
単一の前記基板上でプロセス、プロセスシーケンスおよび材料を試験するステップとを含み、
前記マスクを空間的に変更するステップは、前記マスク上に配置される可動シャッタを前記基板と平行な平面方向に移動させて、前記マスクの一部を遮蔽するステップを含む、方法。 - 前記悪環境は、空気、湿気、および粒子状汚染から成る群から選択される、請求項1に記載の方法。
- 前記クラスタツール内の真空を破壊せずに、前記基板の複数領域を逐次的に処理する、請求項1に記載の方法。
- 前記マスクを空間的に変更するステップは、前記マスクを回転するステップまたは前記基板を回転するステップのうちの1つをさらに含む、請求項1に記載の方法。
- 前記マスクを空間的に変更するステップは、前記マスクを異なる特徴セットパターンを有する別のマスクに変化させるステップをさらに含む、請求項1に記載の方法。
- 基板のコンビナトリアル処理のための方法であって、
真空下、前記基板の離散領域上で第1の部位絶縁蒸着を実行し、前記第1の部位絶縁蒸着は、第1の領域を被覆するステップと、
前記真空を破壊せずに、前記基板の前記離散領域上で第2の部位絶縁蒸着を実行し、前記第2の部位絶縁蒸着は、マスクを空間的に変更して、前記第1の領域と空間的に異なる第2の領域を被覆するステップと、
単一の前記基板上でプロセス、プロセスシーケンスおよび材料を試験するステップとを含み、
前記マスクを空間的に変更することには、前記マスク上に配置される可動シャッタを前記基板と平行な平面方向に移動させて、前記マスクの一部を遮蔽することが含まれる、方法。 - 前記真空を破壊せずに、前記基板の前記離散領域上で第3の部位絶縁蒸着を実行し、前記第3の部位絶縁蒸着は、前記第2の領域と異なる第3の領域を被覆するステップをさらに含む、請求項6に記載の方法。
- 前記第3の部位絶縁蒸着は、前記第2の部位絶縁蒸着によって、前記第1の部位絶縁蒸着から絶縁される、請求項7に記載の方法。
- 前記第1の領域は、サイズまたは幾何学形状のうちの1つに関し、前記第2の領域と異なる、請求項6に記載の方法。
- 前記第1の部位絶縁蒸着を実行後、第1のマスクを除去するステップと、
前記第2の部位絶縁蒸着を実行するための第2のマスクを送達するステップと、
をさらに含む、請求項6に記載の方法。 - 前記第1および第2のマスクは、前記基板から独立して移動される、請求項10に記載の方法。
- 半導体処理システムであって、
複数の処理モジュールと、前記複数の処理モジュールを支持するフレームとを備え、
前記複数の処理モジュールは、前記フレーム周囲にクラスタ化されており、前記複数の処理モジュールのうちの少なくとも1つは、基板表面の第1層の部位絶縁領域を処理し、前記基板表面上に形成される複数の層にわたって、処理する領域のサイズを変更する一方で、前記複数の層にわたって処理する際に、前記複数の処理モジュールを封入するフレーム領域内の制御環境を維持するように構成され、
前記複数の処理モジュールは、異なるマスクパターンを有する複数の処理マスクを格納するモジュールと、前記処理マスク上で前記基板と平行な平面方向に移動して前記処理マスクの一部を遮蔽するように構成された可動シャッタを有するモジュールと、単一の前記基板上でプロセス、プロセスシーケンスおよび材料を試験する試験手段を有するモジュールとを含む、システム。 - 前記複数の処理モジュール間で前記基板を移動させるように構成された搬送機構をさらに備える、請求項12に記載のシステム。
- 前記複数の処理モジュールのうちの少なくとも1つは、その中に配置される取り外し可能なマスクを有するコンビナトリアル処理モジュールであって、前記取り外し可能なマスクは、前記複数の処理モジュール間で前記基板を移動させるように構成される搬送機構を介して、前記コンビナトリアル処理モジュール間で搬送される、請求項12に記載のシステム。
- 前記搬送機構は、前記フレーム領域内に置かれる、請求項13に記載のシステム。
Applications Claiming Priority (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US83224806P | 2006-07-19 | 2006-07-19 | |
US60/832,248 | 2006-07-19 | ||
US11/672,478 | 2007-02-07 | ||
US11/672,478 US7867904B2 (en) | 2006-07-19 | 2007-02-07 | Method and system for isolated and discretized process sequence integration |
US11/672,473 US8815013B2 (en) | 2006-07-19 | 2007-02-07 | Method and system for isolated and discretized process sequence integration |
US11/672,473 | 2007-02-07 | ||
PCT/US2007/073368 WO2008011329A2 (en) | 2006-07-19 | 2007-07-12 | Method and system for isolated and discretized process sequence integration |
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JP2009544173A JP2009544173A (ja) | 2009-12-10 |
JP5389645B2 true JP5389645B2 (ja) | 2014-01-15 |
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JP2009520905A Expired - Fee Related JP5389645B2 (ja) | 2006-07-19 | 2007-07-12 | 絶縁および離散化プロセスのシーケンスの統合のための方法およびシステム |
Country Status (5)
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EP (1) | EP2044623A4 (ja) |
JP (1) | JP5389645B2 (ja) |
KR (1) | KR101412398B1 (ja) |
CN (1) | CN101490834A (ja) |
WO (1) | WO2008011329A2 (ja) |
Families Citing this family (1)
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KR102075528B1 (ko) * | 2013-05-16 | 2020-03-03 | 삼성디스플레이 주식회사 | 증착장치, 유기발광 디스플레이 장치 제조방법 및 유기발광 디스플레이 장치 |
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Publication number | Priority date | Publication date | Assignee | Title |
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US4613981A (en) * | 1984-01-24 | 1986-09-23 | Varian Associates, Inc. | Method and apparatus for lithographic rotate and repeat processing |
US6830663B2 (en) * | 1999-01-26 | 2004-12-14 | Symyx Technologies, Inc. | Method for creating radial profiles on a substrate |
US6675469B1 (en) * | 1999-08-11 | 2004-01-13 | Tessera, Inc. | Vapor phase connection techniques |
JP4588167B2 (ja) * | 2000-05-12 | 2010-11-24 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
SG125891A1 (en) * | 2000-09-08 | 2006-10-30 | Semiconductor Energy Lab | Light emitting device, method of manufacturing thesame, and thin film forming apparatus |
US8900366B2 (en) * | 2002-04-15 | 2014-12-02 | Samsung Display Co., Ltd. | Apparatus for depositing a multilayer coating on discrete sheets |
JP2004349508A (ja) * | 2003-05-22 | 2004-12-09 | Applied Materials Inc | 基体処理方法、マスク部材セット、基体処理装置、素子又は半導体装置の製造方法、及び、素子又は半導体装置の製造条件決定方法 |
JP2005294584A (ja) * | 2004-03-31 | 2005-10-20 | Eudyna Devices Inc | 半導体装置および不純物導入用マスクならびに半導体装置の製造方法 |
KR20060007211A (ko) * | 2004-07-19 | 2006-01-24 | 삼성전자주식회사 | 노광 시스템 |
US7491431B2 (en) * | 2004-12-20 | 2009-02-17 | Nanogram Corporation | Dense coating formation by reactive deposition |
US7371022B2 (en) * | 2004-12-22 | 2008-05-13 | Sokudo Co., Ltd. | Developer endpoint detection in a track lithography system |
-
2007
- 2007-07-12 KR KR1020097001016A patent/KR101412398B1/ko active IP Right Grant
- 2007-07-12 EP EP07840397A patent/EP2044623A4/en not_active Withdrawn
- 2007-07-12 WO PCT/US2007/073368 patent/WO2008011329A2/en active Application Filing
- 2007-07-12 JP JP2009520905A patent/JP5389645B2/ja not_active Expired - Fee Related
- 2007-07-12 CN CNA2007800265640A patent/CN101490834A/zh active Pending
Also Published As
Publication number | Publication date |
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EP2044623A4 (en) | 2012-10-03 |
KR20090060261A (ko) | 2009-06-11 |
WO2008011329A2 (en) | 2008-01-24 |
WO2008011329A3 (en) | 2008-03-20 |
KR101412398B1 (ko) | 2014-06-25 |
JP2009544173A (ja) | 2009-12-10 |
EP2044623A2 (en) | 2009-04-08 |
CN101490834A (zh) | 2009-07-22 |
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