JP5389356B2 - 改良型誘電体パッシベーションを備える半導体デバイス、及び半導体デバイスをパシベーションする方法。 - Google Patents
改良型誘電体パッシベーションを備える半導体デバイス、及び半導体デバイスをパシベーションする方法。 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 131
- 238000000034 method Methods 0.000 title claims description 29
- 238000002161 passivation Methods 0.000 title description 60
- 239000010410 layer Substances 0.000 claims description 288
- 230000004888 barrier function Effects 0.000 claims description 125
- 125000006850 spacer group Chemical group 0.000 claims description 55
- 150000004767 nitrides Chemical class 0.000 claims description 54
- 239000011241 protective layer Substances 0.000 claims description 51
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 42
- 239000000463 material Substances 0.000 claims description 42
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 27
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 27
- 229910002601 GaN Inorganic materials 0.000 claims description 26
- 230000005669 field effect Effects 0.000 claims description 22
- 235000012239 silicon dioxide Nutrition 0.000 claims description 21
- 239000000377 silicon dioxide Substances 0.000 claims description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 19
- 229910052710 silicon Inorganic materials 0.000 claims description 19
- 239000010703 silicon Substances 0.000 claims description 19
- 238000009825 accumulation Methods 0.000 claims description 16
- 239000000203 mixture Substances 0.000 claims description 10
- 230000004044 response Effects 0.000 claims description 10
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 9
- 239000000126 substance Substances 0.000 claims description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 8
- 239000001301 oxygen Substances 0.000 claims description 8
- 229910052760 oxygen Inorganic materials 0.000 claims description 8
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims description 7
- 150000001875 compounds Chemical class 0.000 claims description 7
- 239000003989 dielectric material Substances 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 239000003990 capacitor Substances 0.000 claims 1
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 21
- 239000002800 charge carrier Substances 0.000 description 16
- 239000000969 carrier Substances 0.000 description 12
- 230000007613 environmental effect Effects 0.000 description 9
- 238000009792 diffusion process Methods 0.000 description 8
- 150000002500 ions Chemical class 0.000 description 7
- 239000002243 precursor Substances 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 6
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 6
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 6
- 230000005533 two-dimensional electron gas Effects 0.000 description 6
- 230000008901 benefit Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 230000005527 interface trap Effects 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 229910052681 coesite Inorganic materials 0.000 description 3
- 229910052906 cristobalite Inorganic materials 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 229910052682 stishovite Inorganic materials 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 229910052905 tridymite Inorganic materials 0.000 description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- -1 GaN Metal Oxide Chemical class 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000001627 detrimental effect Effects 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000011253 protective coating Substances 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 230000005428 wave function Effects 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- GYHNNYVSQQEPJS-NJFSPNSNSA-N gallium-72 Chemical compound [72Ga] GYHNNYVSQQEPJS-NJFSPNSNSA-N 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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Description
これらの実施形態では、荷電バリア層32をスペーサ層31上に形成する。次いで、保護層33を荷電バリア層32上に形成し、荷電バリア層32全体を被覆する。
狭バンドギャップ領域は、HEMTのチャネル領域と呼ばれることもあり、GaNの層と、窒化インディウム・ガリウム(InGaN)の薄い層と、AlGaN上にあるGaNの層と、III−V族半導体の他の組み合わせとを含むことができる。広バンドギャップ領域は、多数のAlGaNの層、又は純粋な窒化アルミニウム(AlN)の薄い層であっても含むことができる。上面における純粋なGaNも、当面の使用に応じて、HEMT設計において考慮すべき別の改良である。
図3の電界効果トランジスタ50は、AlGaN及びGaN層において形成された高電子移動度トランジスタ(HEMT)とすることができる。HEMTは、マイクロ波帯域における高周波での高電力出力に有用である。
前述した実施形態によれば、ここに開示するパシベーション方法の1つは、バンドギャップが比較的高い材料を用いて、III族窒化物半導体デバイスの表面上に荷電バリア層を形成し、表面上に露出している半導体材料を少なくとも部分的に被覆し、表面上又はその付近あるいは荷電バリア層内部に蓄積する荷電バリアの数を低減することを含む。本発明のデバイスの態様に関して記したように、バリア層のバンドギャップは、III族窒化物のそれよりも高く、その導電帯がIII族窒化物の導電帯に対してずれていることが好ましい。その後、本方法は、相対的に低いバンドギャップを有する保護層を形成し、荷電バリア層を完全に被覆し、半導体デバイスをイオン拡散から保護することを含む。
異なる方法の実施形態では、荷電バリア層は、半導体デバイスの表面上に、酸窒化シリコンの層で形成してもよい。
Claims (22)
- 半導体デバイスであって、
少なくとも1つの表面を含むIII族窒化物半導体材料の層と、
前記半導体材料の層の電気的応答を制御するための、前記表面上にある制御コンタクトと、
前記半導体デバイス用の導電経路を提供するオーミック・コンタクトであって、前記表面上に設けられたオーミック・コンタクトと、
前記制御コンタクトと前記オーミック・コンタクトとの間の前記表面に設けられ、約5nm〜約200nmの厚さを有する誘電体バリア層であって、前記III族窒化物半導体材料のバンドギャップよりも大きなバンドギャップと、前記III族窒化物半導体材料の伝導帯からずれている伝導帯とを有する、誘電体バリア層と、
前記III族窒化物半導体材料の層の前記少なくとも1つの表面を物理的に保護するため、及び表面電荷蓄積を低減するために、前記少なくとも1つの表面と前記誘電体バリア層との間に介挿したスペーサ層と、
前記誘電体バリア層上にあり、前記誘電体バリア層のバンドギャップよりも小さく、前記III族窒化物半導体材料のバンドギャップよりも大きいバンドギャップを有する誘電体保護層と、
を備えていることを特徴とする半導体デバイス。 - 請求項1記載の半導体デバイスにおいて、前記誘電体保護層は、湿気及び酸化に対する物理的及び化学的なバリアを提供することを特徴とする半導体デバイス。
- 請求項1記載の半導体デバイスにおいて、前記誘電体バリア層は、二酸化シリコンからなることを特徴とする半導体デバイス。
- 請求項1記載の半導体デバイスにおいて、前記誘電体保護層は、窒化シリコンから成るこ
とを特徴とする半導体デバイス。 - 請求項4記載の半導体デバイスにおいて、前記窒化シリコンは、化学量論組成Si3N4、及び窒化シリコンの非化学量論組成化合物から成る群から選択されていることを特徴とする半導体デバイス。
- 請求項1記載の半導体デバイスにおいて、前記誘電体バリア層は、酸窒化シリコンからなることを特徴とする半導体デバイス。
- 請求項1記載の半導体デバイスにおいて、前記誘電体バリア層は、窒化アルミニウムからなることを特徴とする半導体デバイス。
- 請求項1記載の半導体デバイスにおいて、前記誘電体バリア層が有する厚さは、約100nmであることを特徴とする半導体デバイス。
- 請求項1記載の半導体デバイスにおいて、前記誘電体保護層が有する厚さは、約100〜2000nmの間であることを特徴とする半導体デバイス。
- 請求項1記載の半導体デバイスにおいて、前記誘電体保護層が有する厚さは、約400nmであることを特徴とする半導体デバイス。
- 請求項1記載の半導体デバイスにおいて、該デバイスは、電界効果トランジスタ、及び高電子移動度トランジスタから成る群から選択されていることを特徴とする半導体デバイス。
- 請求項1記載の半導体デバイスにおいて、前記スペーサ層と前記III族窒化物半導体材料の層の前記表面との間の界面は、前記III族窒化物半導体材料の層の前記表面と前記誘電体バリア層との間の界面よりも少ない界面準位を有し、前記スペーサ層はSi 3 N 4 、Si x N y 、窒化アルミニウム、及び窒化アルミニウム・ガリウムから成る群から選択され、前記スペーサ層と前記III族窒化物半導体材料との間の界面は酸化物を含有するスペーサ層よりも電子状態が少ない、高品質の界面となることを特徴とする半導体デバイス。
- 請求項1記載の半導体デバイスにおいて、前記スペーサ層が有する厚さは、約0.5〜5nmの間であることを特徴とする半導体デバイス。
- 請求項1記載の半導体デバイスにおいて、前記スペーサ層は、Si3N4、SixNy、窒化アルミニウム、及び窒化アルミニウム・ガリウムから成る群から選択されていることを特徴とする半導体デバイス。
- 少なくとも1つの表面を含むIII族窒化物半導体材料の層と、制御コンタクトと、少なくとも1つのオーミック・コンタクトとを有するIII族窒化物半導体デバイスをパシベーションする方法であって、
前記少なくとも1つの表面上にスペーサ層を形成するステップであって、該スペーサ層は前記誘電体バリア層と前記III族窒化物の表面との間の界面とを比較して前記表面に優れた界面品質を有する、スペーサ層を形成するステップと、
前記制御コンタクトと前記オーミック・コンタクトの間の前記III族窒化物の前記表面上に形成された前記スペーサ層上に誘電体バリア層を形成するステップであって、前記誘電体バリア層が、前記III族窒化物のバンドギャップよりも大きいバンドギャップと、前記III族窒化物の伝導帯からずれている伝導帯とを有しており、かつ約5nmから
約200nmの厚さを有している、ステップと、
水分及び酸素に対して物理的及び化学的バリアを呈しかつ前記誘電体バリア層のバンドギャップよりも小さく、前記III属窒化物のバンドギャップよりも大きいバンドギャップを有する誘電体材料により、前記誘電体バリア層上に保護層を形成するステップと、
からなることを特徴とする方法。 - 請求項15記載のIII族窒化物半導体デバイスをパシベーションする方法において、前記誘電体バリア層は、前記III族窒化物半導体デバイスのIII族窒化物の前記表面上に形成された二酸化シリコンの層であることを特徴とする方法。
- 請求項15記載のIII族窒化物半導体デバイスをパシベーションする方法において、前記保護層を形成する前記ステップは、前記誘電体バリア層上に窒化シリコンの層を形成することから成ることを特徴とする方法。
- 請求項17記載のIII族窒化物半導体デバイスをパシベーションする方法において、前記窒化シリコンの層を形成する前記ステップは、化学量論組成Si3N4、及び非化学量論組成の窒化シリコンから成る群から選択した層を形成することから成ることを特徴とする方法。
- 請求項15記載のIII族窒化物半導体デバイスをパシベーションする方法において、前記誘電体バリア層を形成する前記ステップは、前記III族窒化物半導体デバイスの前記III族窒化物の前記表面上に形成された前記スペーサ上に、酸窒化シリコンの層を形成することから成ることを特徴とする方法。
- 請求項15記載のIII族窒化物半導体デバイスをパシベーションする方法において、前記スペーサ層を形成する前記ステップは、前記III族窒化物半導体デバイスの前記III族窒化物の前記表面上に、窒化シリコンからなる層を形成することから成ることを特徴とする方法。
- 請求項15記載のIII族窒化物半導体デバイスをパシベーションする方法において、前記スペーサ層を形成する前記ステップは、前記III族窒化物半導体デバイスの前記III族窒化物の前記表面上に、窒化アルミニウム又は窒化ガリウム・アルミニウムからなる層を形成することから成ることを特徴とする方法。
- 請求項15記載のIII族窒化物半導体デバイスをパシベーションする方法において、前記スペーサ層を形成する前記ステップを、前記オーミック・コンタクト及び前記制御コンタクトの少なくとも一方の形成の前に実行することを特徴とする方法。
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US7332795B2 (en) | 2008-02-19 |
US20050258431A1 (en) | 2005-11-24 |
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