JP5389356B2 - 改良型誘電体パッシベーションを備える半導体デバイス、及び半導体デバイスをパシベーションする方法。 - Google Patents
改良型誘電体パッシベーションを備える半導体デバイス、及び半導体デバイスをパシベーションする方法。 Download PDFInfo
- Publication number
- JP5389356B2 JP5389356B2 JP2007515170A JP2007515170A JP5389356B2 JP 5389356 B2 JP5389356 B2 JP 5389356B2 JP 2007515170 A JP2007515170 A JP 2007515170A JP 2007515170 A JP2007515170 A JP 2007515170A JP 5389356 B2 JP5389356 B2 JP 5389356B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- semiconductor device
- group iii
- barrier layer
- nitride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims description 131
- 238000000034 method Methods 0.000 title claims description 29
- 238000002161 passivation Methods 0.000 title description 60
- 239000010410 layer Substances 0.000 claims description 288
- 230000004888 barrier function Effects 0.000 claims description 125
- 125000006850 spacer group Chemical group 0.000 claims description 55
- 150000004767 nitrides Chemical class 0.000 claims description 54
- 239000011241 protective layer Substances 0.000 claims description 51
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 42
- 239000000463 material Substances 0.000 claims description 42
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 27
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 27
- 229910002601 GaN Inorganic materials 0.000 claims description 26
- 230000005669 field effect Effects 0.000 claims description 22
- 235000012239 silicon dioxide Nutrition 0.000 claims description 21
- 239000000377 silicon dioxide Substances 0.000 claims description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 19
- 229910052710 silicon Inorganic materials 0.000 claims description 19
- 239000010703 silicon Substances 0.000 claims description 19
- 238000009825 accumulation Methods 0.000 claims description 16
- 239000000203 mixture Substances 0.000 claims description 10
- 230000004044 response Effects 0.000 claims description 10
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 9
- 239000000126 substance Substances 0.000 claims description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 8
- 239000001301 oxygen Substances 0.000 claims description 8
- 229910052760 oxygen Inorganic materials 0.000 claims description 8
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims description 7
- 150000001875 compounds Chemical class 0.000 claims description 7
- 239000003989 dielectric material Substances 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 239000003990 capacitor Substances 0.000 claims 1
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 21
- 239000002800 charge carrier Substances 0.000 description 16
- 239000000969 carrier Substances 0.000 description 12
- 230000007613 environmental effect Effects 0.000 description 9
- 238000009792 diffusion process Methods 0.000 description 8
- 150000002500 ions Chemical class 0.000 description 7
- 239000002243 precursor Substances 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 6
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 6
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 6
- 230000005533 two-dimensional electron gas Effects 0.000 description 6
- 230000008901 benefit Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 230000005527 interface trap Effects 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 229910052681 coesite Inorganic materials 0.000 description 3
- 229910052906 cristobalite Inorganic materials 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 229910052682 stishovite Inorganic materials 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 229910052905 tridymite Inorganic materials 0.000 description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- -1 GaN Metal Oxide Chemical class 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000001627 detrimental effect Effects 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000011253 protective coating Substances 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 230000005428 wave function Effects 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- GYHNNYVSQQEPJS-NJFSPNSNSA-N gallium-72 Chemical compound [72Ga] GYHNNYVSQQEPJS-NJFSPNSNSA-N 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type
- H01L31/1085—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type the devices being of the Metal-Semiconductor-Metal [MSM] Schottky barrier type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
- H01L21/0214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being a silicon oxynitride, e.g. SiON or SiON:H
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/022—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02266—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
- H01L23/3192—Multilayer coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- Junction Field-Effect Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Description
これらの実施形態では、荷電バリア層32をスペーサ層31上に形成する。次いで、保護層33を荷電バリア層32上に形成し、荷電バリア層32全体を被覆する。
狭バンドギャップ領域は、HEMTのチャネル領域と呼ばれることもあり、GaNの層と、窒化インディウム・ガリウム(InGaN)の薄い層と、AlGaN上にあるGaNの層と、III−V族半導体の他の組み合わせとを含むことができる。広バンドギャップ領域は、多数のAlGaNの層、又は純粋な窒化アルミニウム(AlN)の薄い層であっても含むことができる。上面における純粋なGaNも、当面の使用に応じて、HEMT設計において考慮すべき別の改良である。
図3の電界効果トランジスタ50は、AlGaN及びGaN層において形成された高電子移動度トランジスタ(HEMT)とすることができる。HEMTは、マイクロ波帯域における高周波での高電力出力に有用である。
前述した実施形態によれば、ここに開示するパシベーション方法の1つは、バンドギャップが比較的高い材料を用いて、III族窒化物半導体デバイスの表面上に荷電バリア層を形成し、表面上に露出している半導体材料を少なくとも部分的に被覆し、表面上又はその付近あるいは荷電バリア層内部に蓄積する荷電バリアの数を低減することを含む。本発明のデバイスの態様に関して記したように、バリア層のバンドギャップは、III族窒化物のそれよりも高く、その導電帯がIII族窒化物の導電帯に対してずれていることが好ましい。その後、本方法は、相対的に低いバンドギャップを有する保護層を形成し、荷電バリア層を完全に被覆し、半導体デバイスをイオン拡散から保護することを含む。
異なる方法の実施形態では、荷電バリア層は、半導体デバイスの表面上に、酸窒化シリコンの層で形成してもよい。
Claims (22)
- 半導体デバイスであって、
少なくとも1つの表面を含むIII族窒化物半導体材料の層と、
前記半導体材料の層の電気的応答を制御するための、前記表面上にある制御コンタクトと、
前記半導体デバイス用の導電経路を提供するオーミック・コンタクトであって、前記表面上に設けられたオーミック・コンタクトと、
前記制御コンタクトと前記オーミック・コンタクトとの間の前記表面に設けられ、約5nm〜約200nmの厚さを有する誘電体バリア層であって、前記III族窒化物半導体材料のバンドギャップよりも大きなバンドギャップと、前記III族窒化物半導体材料の伝導帯からずれている伝導帯とを有する、誘電体バリア層と、
前記III族窒化物半導体材料の層の前記少なくとも1つの表面を物理的に保護するため、及び表面電荷蓄積を低減するために、前記少なくとも1つの表面と前記誘電体バリア層との間に介挿したスペーサ層と、
前記誘電体バリア層上にあり、前記誘電体バリア層のバンドギャップよりも小さく、前記III族窒化物半導体材料のバンドギャップよりも大きいバンドギャップを有する誘電体保護層と、
を備えていることを特徴とする半導体デバイス。 - 請求項1記載の半導体デバイスにおいて、前記誘電体保護層は、湿気及び酸化に対する物理的及び化学的なバリアを提供することを特徴とする半導体デバイス。
- 請求項1記載の半導体デバイスにおいて、前記誘電体バリア層は、二酸化シリコンからなることを特徴とする半導体デバイス。
- 請求項1記載の半導体デバイスにおいて、前記誘電体保護層は、窒化シリコンから成るこ
とを特徴とする半導体デバイス。 - 請求項4記載の半導体デバイスにおいて、前記窒化シリコンは、化学量論組成Si3N4、及び窒化シリコンの非化学量論組成化合物から成る群から選択されていることを特徴とする半導体デバイス。
- 請求項1記載の半導体デバイスにおいて、前記誘電体バリア層は、酸窒化シリコンからなることを特徴とする半導体デバイス。
- 請求項1記載の半導体デバイスにおいて、前記誘電体バリア層は、窒化アルミニウムからなることを特徴とする半導体デバイス。
- 請求項1記載の半導体デバイスにおいて、前記誘電体バリア層が有する厚さは、約100nmであることを特徴とする半導体デバイス。
- 請求項1記載の半導体デバイスにおいて、前記誘電体保護層が有する厚さは、約100〜2000nmの間であることを特徴とする半導体デバイス。
- 請求項1記載の半導体デバイスにおいて、前記誘電体保護層が有する厚さは、約400nmであることを特徴とする半導体デバイス。
- 請求項1記載の半導体デバイスにおいて、該デバイスは、電界効果トランジスタ、及び高電子移動度トランジスタから成る群から選択されていることを特徴とする半導体デバイス。
- 請求項1記載の半導体デバイスにおいて、前記スペーサ層と前記III族窒化物半導体材料の層の前記表面との間の界面は、前記III族窒化物半導体材料の層の前記表面と前記誘電体バリア層との間の界面よりも少ない界面準位を有し、前記スペーサ層はSi 3 N 4 、Si x N y 、窒化アルミニウム、及び窒化アルミニウム・ガリウムから成る群から選択され、前記スペーサ層と前記III族窒化物半導体材料との間の界面は酸化物を含有するスペーサ層よりも電子状態が少ない、高品質の界面となることを特徴とする半導体デバイス。
- 請求項1記載の半導体デバイスにおいて、前記スペーサ層が有する厚さは、約0.5〜5nmの間であることを特徴とする半導体デバイス。
- 請求項1記載の半導体デバイスにおいて、前記スペーサ層は、Si3N4、SixNy、窒化アルミニウム、及び窒化アルミニウム・ガリウムから成る群から選択されていることを特徴とする半導体デバイス。
- 少なくとも1つの表面を含むIII族窒化物半導体材料の層と、制御コンタクトと、少なくとも1つのオーミック・コンタクトとを有するIII族窒化物半導体デバイスをパシベーションする方法であって、
前記少なくとも1つの表面上にスペーサ層を形成するステップであって、該スペーサ層は前記誘電体バリア層と前記III族窒化物の表面との間の界面とを比較して前記表面に優れた界面品質を有する、スペーサ層を形成するステップと、
前記制御コンタクトと前記オーミック・コンタクトの間の前記III族窒化物の前記表面上に形成された前記スペーサ層上に誘電体バリア層を形成するステップであって、前記誘電体バリア層が、前記III族窒化物のバンドギャップよりも大きいバンドギャップと、前記III族窒化物の伝導帯からずれている伝導帯とを有しており、かつ約5nmから
約200nmの厚さを有している、ステップと、
水分及び酸素に対して物理的及び化学的バリアを呈しかつ前記誘電体バリア層のバンドギャップよりも小さく、前記III属窒化物のバンドギャップよりも大きいバンドギャップを有する誘電体材料により、前記誘電体バリア層上に保護層を形成するステップと、
からなることを特徴とする方法。 - 請求項15記載のIII族窒化物半導体デバイスをパシベーションする方法において、前記誘電体バリア層は、前記III族窒化物半導体デバイスのIII族窒化物の前記表面上に形成された二酸化シリコンの層であることを特徴とする方法。
- 請求項15記載のIII族窒化物半導体デバイスをパシベーションする方法において、前記保護層を形成する前記ステップは、前記誘電体バリア層上に窒化シリコンの層を形成することから成ることを特徴とする方法。
- 請求項17記載のIII族窒化物半導体デバイスをパシベーションする方法において、前記窒化シリコンの層を形成する前記ステップは、化学量論組成Si3N4、及び非化学量論組成の窒化シリコンから成る群から選択した層を形成することから成ることを特徴とする方法。
- 請求項15記載のIII族窒化物半導体デバイスをパシベーションする方法において、前記誘電体バリア層を形成する前記ステップは、前記III族窒化物半導体デバイスの前記III族窒化物の前記表面上に形成された前記スペーサ上に、酸窒化シリコンの層を形成することから成ることを特徴とする方法。
- 請求項15記載のIII族窒化物半導体デバイスをパシベーションする方法において、前記スペーサ層を形成する前記ステップは、前記III族窒化物半導体デバイスの前記III族窒化物の前記表面上に、窒化シリコンからなる層を形成することから成ることを特徴とする方法。
- 請求項15記載のIII族窒化物半導体デバイスをパシベーションする方法において、前記スペーサ層を形成する前記ステップは、前記III族窒化物半導体デバイスの前記III族窒化物の前記表面上に、窒化アルミニウム又は窒化ガリウム・アルミニウムからなる層を形成することから成ることを特徴とする方法。
- 請求項15記載のIII族窒化物半導体デバイスをパシベーションする方法において、前記スペーサ層を形成する前記ステップを、前記オーミック・コンタクト及び前記制御コンタクトの少なくとも一方の形成の前に実行することを特徴とする方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/851,507 US7332795B2 (en) | 2004-05-22 | 2004-05-22 | Dielectric passivation for semiconductor devices |
US10/851,507 | 2004-05-22 | ||
PCT/US2005/017059 WO2005117129A1 (en) | 2004-05-22 | 2005-05-16 | Improved dielectric passivation for semiconductor devices |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2008500732A JP2008500732A (ja) | 2008-01-10 |
JP2008500732A5 JP2008500732A5 (ja) | 2013-10-03 |
JP5389356B2 true JP5389356B2 (ja) | 2014-01-15 |
Family
ID=34969674
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007515170A Active JP5389356B2 (ja) | 2004-05-22 | 2005-05-16 | 改良型誘電体パッシベーションを備える半導体デバイス、及び半導体デバイスをパシベーションする方法。 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7332795B2 (ja) |
JP (1) | JP5389356B2 (ja) |
DE (1) | DE112005001179B4 (ja) |
WO (1) | WO2005117129A1 (ja) |
Families Citing this family (65)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7612390B2 (en) * | 2004-02-05 | 2009-11-03 | Cree, Inc. | Heterojunction transistors including energy barriers |
US7236053B2 (en) * | 2004-12-31 | 2007-06-26 | Cree, Inc. | High efficiency switch-mode power amplifier |
US7598576B2 (en) * | 2005-06-29 | 2009-10-06 | Cree, Inc. | Environmentally robust passivation structures for high-voltage silicon carbide semiconductor devices |
US7855401B2 (en) * | 2005-06-29 | 2010-12-21 | Cree, Inc. | Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitrides |
US7525122B2 (en) * | 2005-06-29 | 2009-04-28 | Cree, Inc. | Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitrides |
US9331192B2 (en) * | 2005-06-29 | 2016-05-03 | Cree, Inc. | Low dislocation density group III nitride layers on silicon carbide substrates and methods of making the same |
US20070018198A1 (en) * | 2005-07-20 | 2007-01-25 | Brandes George R | High electron mobility electronic device structures comprising native substrates and methods for making the same |
WO2007040160A1 (ja) * | 2005-09-30 | 2007-04-12 | Nec Corporation | 電界効果トランジスタ |
FR2892562B1 (fr) * | 2005-10-21 | 2008-01-18 | Thales Sa | Dispositif de passivation d'un composant a semi-conducteur lateral |
US8193591B2 (en) * | 2006-04-13 | 2012-06-05 | Freescale Semiconductor, Inc. | Transistor and method with dual layer passivation |
US20070284677A1 (en) * | 2006-06-08 | 2007-12-13 | Weng Chang | Metal oxynitride gate |
US7656010B2 (en) * | 2006-09-20 | 2010-02-02 | Panasonic Corporation | Semiconductor device |
JP2008103705A (ja) * | 2006-09-20 | 2008-05-01 | Matsushita Electric Ind Co Ltd | 半導体装置 |
US8823057B2 (en) | 2006-11-06 | 2014-09-02 | Cree, Inc. | Semiconductor devices including implanted regions for providing low-resistance contact to buried layers and related devices |
US8878245B2 (en) * | 2006-11-30 | 2014-11-04 | Cree, Inc. | Transistors and method for making ohmic contact to transistors |
US9484499B2 (en) * | 2007-04-20 | 2016-11-01 | Cree, Inc. | Transparent ohmic contacts on light emitting diodes with carrier substrates |
US20080265444A1 (en) * | 2007-04-26 | 2008-10-30 | Heetronix | Thin-film aluminum nitride encapsulant for metallic structures on integrated circuits and method of forming same |
US20090072269A1 (en) * | 2007-09-17 | 2009-03-19 | Chang Soo Suh | Gallium nitride diodes and integrated components |
US8368100B2 (en) | 2007-11-14 | 2013-02-05 | Cree, Inc. | Semiconductor light emitting diodes having reflective structures and methods of fabricating same |
DE102008020793A1 (de) * | 2008-04-22 | 2009-11-05 | Forschungsverbund Berlin E.V. | Halbleiterbauelement, Vorprodukt und Verfahren zur Herstellung |
US8519438B2 (en) | 2008-04-23 | 2013-08-27 | Transphorm Inc. | Enhancement mode III-N HEMTs |
US8289065B2 (en) * | 2008-09-23 | 2012-10-16 | Transphorm Inc. | Inductive load power switching circuits |
US7898004B2 (en) | 2008-12-10 | 2011-03-01 | Transphorm Inc. | Semiconductor heterostructure diodes |
US8742459B2 (en) * | 2009-05-14 | 2014-06-03 | Transphorm Inc. | High voltage III-nitride semiconductor devices |
US9991360B2 (en) * | 2009-06-26 | 2018-06-05 | Cornell University | Method for forming III-V semiconductor structures including aluminum-silicon nitride passivation |
US8390000B2 (en) | 2009-08-28 | 2013-03-05 | Transphorm Inc. | Semiconductor devices with field plates |
US8389977B2 (en) * | 2009-12-10 | 2013-03-05 | Transphorm Inc. | Reverse side engineered III-nitride devices |
KR101679054B1 (ko) | 2010-05-04 | 2016-11-25 | 삼성전자주식회사 | 산소처리영역을 포함하는 고 전자 이동도 트랜지스터 및 그 제조방법 |
US8878246B2 (en) | 2010-06-14 | 2014-11-04 | Samsung Electronics Co., Ltd. | High electron mobility transistors and methods of fabricating the same |
US8729486B2 (en) * | 2010-06-23 | 2014-05-20 | The Board Of Trustees Of The Leland Stanford Junior University | MODFET active pixel X-ray detector |
KR101652403B1 (ko) * | 2010-08-13 | 2016-08-31 | 삼성전자주식회사 | 전력 전자소자 및 그 제조방법 |
US8742460B2 (en) | 2010-12-15 | 2014-06-03 | Transphorm Inc. | Transistors with isolation regions |
US8643062B2 (en) | 2011-02-02 | 2014-02-04 | Transphorm Inc. | III-N device structures and methods |
US8772842B2 (en) | 2011-03-04 | 2014-07-08 | Transphorm, Inc. | Semiconductor diodes with low reverse bias currents |
US8716141B2 (en) | 2011-03-04 | 2014-05-06 | Transphorm Inc. | Electrode configurations for semiconductor devices |
US8901604B2 (en) | 2011-09-06 | 2014-12-02 | Transphorm Inc. | Semiconductor devices with guard rings |
US9257547B2 (en) | 2011-09-13 | 2016-02-09 | Transphorm Inc. | III-N device structures having a non-insulating substrate |
US8598937B2 (en) | 2011-10-07 | 2013-12-03 | Transphorm Inc. | High power semiconductor electronic components with increased reliability |
KR101869045B1 (ko) * | 2012-01-11 | 2018-06-19 | 삼성전자 주식회사 | 고전자이동도 트랜지스터 및 그 제조방법 |
US9165766B2 (en) | 2012-02-03 | 2015-10-20 | Transphorm Inc. | Buffer layer structures suited for III-nitride devices with foreign substrates |
US8941148B2 (en) | 2012-03-06 | 2015-01-27 | Infineon Technologies Austria Ag | Semiconductor device and method |
JP6025242B2 (ja) * | 2012-03-30 | 2016-11-16 | 住友電工デバイス・イノベーション株式会社 | 半導体装置の製造方法 |
WO2013155108A1 (en) | 2012-04-09 | 2013-10-17 | Transphorm Inc. | N-polar iii-nitride transistors |
US8937336B2 (en) | 2012-05-17 | 2015-01-20 | The Hong Kong University Of Science And Technology | Passivation of group III-nitride heterojunction devices |
US9184275B2 (en) | 2012-06-27 | 2015-11-10 | Transphorm Inc. | Semiconductor devices with integrated hole collectors |
US9991399B2 (en) | 2012-10-04 | 2018-06-05 | Cree, Inc. | Passivation structure for semiconductor devices |
US8994073B2 (en) | 2012-10-04 | 2015-03-31 | Cree, Inc. | Hydrogen mitigation schemes in the passivation of advanced devices |
US9812338B2 (en) | 2013-03-14 | 2017-11-07 | Cree, Inc. | Encapsulation of advanced devices using novel PECVD and ALD schemes |
CN105164811B (zh) | 2013-02-15 | 2018-08-31 | 创世舫电子有限公司 | 半导体器件的电极及其形成方法 |
US9087718B2 (en) | 2013-03-13 | 2015-07-21 | Transphorm Inc. | Enhancement-mode III-nitride devices |
US9245993B2 (en) | 2013-03-15 | 2016-01-26 | Transphorm Inc. | Carbon doping semiconductor devices |
WO2015009514A1 (en) | 2013-07-19 | 2015-01-22 | Transphorm Inc. | Iii-nitride transistor including a p-type depleting layer |
US9978844B2 (en) * | 2013-08-01 | 2018-05-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | HEMT-compatible lateral rectifier structure |
JP6375608B2 (ja) * | 2013-10-15 | 2018-08-22 | 富士通株式会社 | 半導体装置及びその製造方法 |
US9425301B2 (en) * | 2014-04-30 | 2016-08-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Sidewall passivation for HEMT devices |
US9318593B2 (en) | 2014-07-21 | 2016-04-19 | Transphorm Inc. | Forming enhancement mode III-nitride devices |
USD826871S1 (en) | 2014-12-11 | 2018-08-28 | Cree, Inc. | Light emitting diode device |
US9536967B2 (en) | 2014-12-16 | 2017-01-03 | Transphorm Inc. | Recessed ohmic contacts in a III-N device |
US9536966B2 (en) | 2014-12-16 | 2017-01-03 | Transphorm Inc. | Gate structures for III-N devices |
JP6888013B2 (ja) | 2016-01-15 | 2021-06-16 | トランスフォーム テクノロジー,インコーポレーテッド | AL(1−x)Si(x)Oゲート絶縁体を有するエンハンスメントモードIII族窒化物デバイス |
US10014401B2 (en) | 2016-01-25 | 2018-07-03 | Electronics And Telecommunications Research Institute | Semiconductor device with passivation layer for control of leakage current |
TWI813243B (zh) | 2016-05-31 | 2023-08-21 | 美商創世舫科技有限公司 | 包含漸變空乏層的三族氮化物裝置 |
CN111354783B (zh) * | 2018-12-21 | 2024-02-20 | 苏州捷芯威半导体有限公司 | 一种半导体器件及其制备方法 |
US11145735B2 (en) | 2019-10-11 | 2021-10-12 | Raytheon Company | Ohmic alloy contact region sealing layer |
CN112420813B (zh) * | 2020-11-19 | 2022-08-02 | 厦门市三安集成电路有限公司 | 用于ⅲ-ⅴ族氮化物器件的表面钝化结构及其器件 |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5057897A (en) | 1990-03-05 | 1991-10-15 | Vlsi Technology, Inc. | Charge neutralization using silicon-enriched oxide layer |
US5128279A (en) | 1990-03-05 | 1992-07-07 | Vlsi Technology, Inc. | Charge neutralization using silicon-enriched oxide layer |
US5223458A (en) * | 1990-12-18 | 1993-06-29 | Raytheon Company | Method of manufacturing a III-V semiconductor device using a self-biased substrate and a plasma containing an electronegative species |
EP0506291B1 (en) * | 1991-03-20 | 1997-01-22 | Mitsubishi Gas Chemical Company, Inc. | Apparatus for applying tape and method therefor |
US5192987A (en) | 1991-05-17 | 1993-03-09 | Apa Optics, Inc. | High electron mobility transistor with GaN/Alx Ga1-x N heterojunctions |
JP3120756B2 (ja) * | 1997-06-16 | 2000-12-25 | 日本電気株式会社 | 電界効果トランジスタ及びその製造方法 |
US6316820B1 (en) * | 1997-07-25 | 2001-11-13 | Hughes Electronics Corporation | Passivation layer and process for semiconductor devices |
US6242327B1 (en) * | 1997-09-19 | 2001-06-05 | Fujitsu Limited | Compound semiconductor device having a reduced source resistance |
US6316793B1 (en) | 1998-06-12 | 2001-11-13 | Cree, Inc. | Nitride based transistors on semi-insulating silicon carbide substrates |
US6246076B1 (en) | 1998-08-28 | 2001-06-12 | Cree, Inc. | Layered dielectric on silicon carbide semiconductor structures |
US6297092B1 (en) | 1998-12-02 | 2001-10-02 | Micron Technology, Inc. | Method and structure for an oxide layer overlaying an oxidation-resistant layer |
JP4224737B2 (ja) * | 1999-03-04 | 2009-02-18 | ソニー株式会社 | 半導体素子 |
JP2001085670A (ja) | 1999-09-14 | 2001-03-30 | Nec Corp | 電界効果型トランジスタ及びその製造方法 |
US6586781B2 (en) | 2000-02-04 | 2003-07-01 | Cree Lighting Company | Group III nitride based FETs and HEMTs with reduced trapping and method for producing the same |
US6690042B2 (en) | 2000-09-27 | 2004-02-10 | Sensor Electronic Technology, Inc. | Metal oxide semiconductor heterostructure field effect transistor |
US6548333B2 (en) | 2000-12-01 | 2003-04-15 | Cree, Inc. | Aluminum gallium nitride/gallium nitride high electron mobility transistors having a gate contact on a gallium nitride based cap segment |
JP2002319593A (ja) * | 2001-04-19 | 2002-10-31 | Furukawa Electric Co Ltd:The | 半導体デバイスおよび電極形成方法 |
JP4663156B2 (ja) * | 2001-05-31 | 2011-03-30 | 富士通株式会社 | 化合物半導体装置 |
CN1557024B (zh) * | 2001-07-24 | 2010-04-07 | 美商克立股份有限公司 | 绝缘栅铝镓氮化物/氮化钾高电子迁移率晶体管(hemt) |
JP2003086608A (ja) * | 2001-09-14 | 2003-03-20 | Toshiba Corp | 電界効果トランジスタ及びその製造方法 |
US7030428B2 (en) | 2001-12-03 | 2006-04-18 | Cree, Inc. | Strain balanced nitride heterojunction transistors |
US6903385B2 (en) | 2002-10-09 | 2005-06-07 | Sensor Electronic Technology, Inc. | Semiconductor structure having a textured nitride-based layer |
JP3578753B2 (ja) * | 2002-10-24 | 2004-10-20 | 沖電気工業株式会社 | シリコン酸化膜の評価方法および半導体装置の製造方法 |
US7045404B2 (en) * | 2004-01-16 | 2006-05-16 | Cree, Inc. | Nitride-based transistors with a protective layer and a low-damage recess and methods of fabrication thereof |
-
2004
- 2004-05-22 US US10/851,507 patent/US7332795B2/en active Active
-
2005
- 2005-05-16 WO PCT/US2005/017059 patent/WO2005117129A1/en active Application Filing
- 2005-05-16 JP JP2007515170A patent/JP5389356B2/ja active Active
- 2005-05-16 DE DE112005001179.8T patent/DE112005001179B4/de active Active
Also Published As
Publication number | Publication date |
---|---|
DE112005001179B4 (de) | 2018-02-08 |
WO2005117129A1 (en) | 2005-12-08 |
US7332795B2 (en) | 2008-02-19 |
US20050258431A1 (en) | 2005-11-24 |
DE112005001179T5 (de) | 2007-04-26 |
JP2008500732A (ja) | 2008-01-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5389356B2 (ja) | 改良型誘電体パッシベーションを備える半導体デバイス、及び半導体デバイスをパシベーションする方法。 | |
US7256432B2 (en) | Field-effect transistor | |
US9837518B2 (en) | Semiconductor device | |
US7863648B2 (en) | Field effect transistor | |
JP5125512B2 (ja) | 電界効果トランジスタ | |
EP1708259B1 (en) | Semiconductor device having GaN-based semiconductor layer | |
US7170111B2 (en) | Nitride heterojunction transistors having charge-transfer induced energy barriers and methods of fabricating the same | |
JP5663000B2 (ja) | 逆拡散抑制構造 | |
JP5487550B2 (ja) | 電界効果半導体装置及びその製造方法 | |
JP4592938B2 (ja) | 半導体装置 | |
JP5028418B2 (ja) | 水素のないスパッタされた窒化物を用いた、広いバンドギャップに基づいた半導体デバイスの不動態化 | |
US7777251B2 (en) | Compound semiconductor device and doherty amplifier using compound semiconductor device | |
US10283632B2 (en) | Nitride semiconductor device and manufacturing method thereof | |
JP2013168663A (ja) | 水素を含まないスパッタリングされた窒化物を有するワイドバンドギャップベースの半導体デバイスの不動態化 | |
US20090173968A1 (en) | Field Effect Transistor | |
US20220416072A1 (en) | Nitride semiconductor device and method of manufacturing the same | |
US11024730B2 (en) | Nitride semiconductor device and manufacturing method for the same | |
JP2007537580A (ja) | 絶縁体構造を強化した電界効果トランジスタ | |
US11594625B2 (en) | III-N transistor structures with stepped cap layers | |
KR101870524B1 (ko) | 반도체 장치 및 그 제조 방법 | |
JP2018113286A (ja) | 半導体装置 | |
Higashiwaki et al. | High f T and f max AlGaN/GaN HFETs achieved by using thin and high‐Al‐composition AlGaN barrier layers and Cat‐CVD SiN passivation |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20080409 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20080409 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20110906 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20111125 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20111130 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120229 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20120914 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130111 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20130118 |
|
A912 | Re-examination (zenchi) completed and case transferred to appeal board |
Free format text: JAPANESE INTERMEDIATE CODE: A912 Effective date: 20130222 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20130620 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20130625 |
|
A524 | Written submission of copy of amendment under article 19 pct |
Free format text: JAPANESE INTERMEDIATE CODE: A524 Effective date: 20130815 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20131009 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 Ref document number: 5389356 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
S533 | Written request for registration of change of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313533 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |