JP5386058B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP5386058B2
JP5386058B2 JP2006104784A JP2006104784A JP5386058B2 JP 5386058 B2 JP5386058 B2 JP 5386058B2 JP 2006104784 A JP2006104784 A JP 2006104784A JP 2006104784 A JP2006104784 A JP 2006104784A JP 5386058 B2 JP5386058 B2 JP 5386058B2
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Japan
Prior art keywords
film
insulating film
electrode
density plasma
substrate
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Expired - Fee Related
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JP2006104784A
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English (en)
Japanese (ja)
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JP2006332604A (ja
JP2006332604A5 (enExample
Inventor
敦生 磯部
智史 村上
舜平 山崎
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2006104784A priority Critical patent/JP5386058B2/ja
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Publication of JP2006332604A5 publication Critical patent/JP2006332604A5/ja
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  • Liquid Crystal (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Thin Film Transistor (AREA)
JP2006104784A 2005-04-28 2006-04-06 半導体装置の作製方法 Expired - Fee Related JP5386058B2 (ja)

Priority Applications (1)

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JP2006104784A JP5386058B2 (ja) 2005-04-28 2006-04-06 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2005133688 2005-04-28
JP2005133688 2005-04-28
JP2006104784A JP5386058B2 (ja) 2005-04-28 2006-04-06 半導体装置の作製方法

Related Child Applications (1)

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JP2013154804A Division JP5690885B2 (ja) 2005-04-28 2013-07-25 半導体装置の作製方法、及び半導体装置

Publications (3)

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JP2006332604A JP2006332604A (ja) 2006-12-07
JP2006332604A5 JP2006332604A5 (enExample) 2009-05-21
JP5386058B2 true JP5386058B2 (ja) 2014-01-15

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JP2006104784A Expired - Fee Related JP5386058B2 (ja) 2005-04-28 2006-04-06 半導体装置の作製方法

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Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100859113B1 (ko) * 2007-02-13 2008-09-18 홍익대학교부설과학기술연구소 문턱 전압의 조절이 가능한 유기 박막 트랜지스터 및 그것의 제조방법
JP5512931B2 (ja) * 2007-03-26 2014-06-04 株式会社半導体エネルギー研究所 半導体装置の作製方法
TWI500160B (zh) 2008-08-08 2015-09-11 Semiconductor Energy Lab 半導體裝置及其製造方法
JP5452343B2 (ja) * 2010-04-27 2014-03-26 株式会社ジャパンディスプレイ 表示装置およびその製造方法
WO2011158704A1 (en) * 2010-06-18 2011-12-22 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR101830170B1 (ko) 2011-05-17 2018-02-21 삼성디스플레이 주식회사 산화물 반도체 소자, 산화물 반도체 소자의 제조 방법, 산화물 반도체소자를 포함하는 표시 장치 및 산화물 반도체 소자를 포함하는 표시 장치의 제조 방법
JP6761276B2 (ja) * 2015-05-28 2020-09-23 株式会社半導体エネルギー研究所 表示装置の作製方法、および電子機器の作製方法
CN110313057A (zh) * 2017-02-28 2019-10-08 夏普株式会社 有源矩阵基板的制造方法和有机el显示装置的制造方法
US20190363172A1 (en) * 2017-03-07 2019-11-28 Sharp Kabushiki Kaisha Method for manufacturing active matrix substrate, method for manufacturing organic el display device, and active matrix substrate

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05150259A (ja) * 1991-11-27 1993-06-18 Fujitsu Ltd 液晶表示装置及びその製造方法
JP2895700B2 (ja) * 1993-01-20 1999-05-24 シャープ株式会社 アクティブマトリクス表示素子
JPH0964034A (ja) * 1995-08-18 1997-03-07 Toshiba Corp 半導体装置およびその製造方法
JP2000306860A (ja) * 1999-04-20 2000-11-02 Nec Corp 半導体装置の製造方法
JP4766724B2 (ja) * 1999-06-22 2011-09-07 株式会社半導体エネルギー研究所 半導体装置の作製方法
TWI225668B (en) * 2002-05-13 2004-12-21 Tokyo Electron Ltd Substrate processing method
JP2004047549A (ja) * 2002-07-09 2004-02-12 Seiko Instruments Inc 半導体装置の製造方法
JP4358503B2 (ja) * 2002-12-12 2009-11-04 忠弘 大見 不揮発性半導体記憶装置の製造方法

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JP2006332604A (ja) 2006-12-07

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