JP5378779B2 - エピタキシャルウェーハの製造方法 - Google Patents

エピタキシャルウェーハの製造方法 Download PDF

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JP5378779B2
JP5378779B2 JP2008315108A JP2008315108A JP5378779B2 JP 5378779 B2 JP5378779 B2 JP 5378779B2 JP 2008315108 A JP2008315108 A JP 2008315108A JP 2008315108 A JP2008315108 A JP 2008315108A JP 5378779 B2 JP5378779 B2 JP 5378779B2
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temperature
epitaxial wafer
susceptor
epitaxial
wafer
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JP2010141060A (ja
JP2010141060A5 (enrdf_load_stackoverflow
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和宏 楢原
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Sumco Techxiv Corp
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Sumco Techxiv Corp
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Priority to US12/632,032 priority patent/US9758871B2/en
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JP2008315108A 2008-12-10 2008-12-10 エピタキシャルウェーハの製造方法 Active JP5378779B2 (ja)

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Application Number Priority Date Filing Date Title
JP2008315108A JP5378779B2 (ja) 2008-12-10 2008-12-10 エピタキシャルウェーハの製造方法
US12/632,032 US9758871B2 (en) 2008-12-10 2009-12-07 Method and apparatus for manufacturing epitaxial silicon wafer

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Application Number Priority Date Filing Date Title
JP2008315108A JP5378779B2 (ja) 2008-12-10 2008-12-10 エピタキシャルウェーハの製造方法

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JP2010141060A JP2010141060A (ja) 2010-06-24
JP2010141060A5 JP2010141060A5 (enrdf_load_stackoverflow) 2012-02-02
JP5378779B2 true JP5378779B2 (ja) 2013-12-25

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Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5646207B2 (ja) * 2010-04-30 2014-12-24 株式会社ニューフレアテクノロジー 成膜装置および成膜方法
JP6836965B2 (ja) * 2017-06-23 2021-03-03 昭和電工株式会社 成膜装置
JP7661877B2 (ja) 2021-12-27 2025-04-15 株式会社Sumco エピタキシャルウェーハの製造方法およびエピタキシャルウェーハ製造装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06204143A (ja) * 1992-12-28 1994-07-22 Hitachi Ltd Ｃｖｄ装置
JP3604425B2 (ja) * 1994-08-09 2004-12-22 東芝機械株式会社 気相成長装置
JP2000064029A (ja) * 1998-08-20 2000-02-29 Toshiba Mach Co Ltd 半導体製造装置の温度制御機構
JP2002289601A (ja) * 2001-03-28 2002-10-04 Hitachi Kokusai Electric Inc 基板処理装置及び方法
JP3922018B2 (ja) * 2001-12-21 2007-05-30 株式会社Ｓｕｍｃｏ 気相成長装置および気相成長装置の温度検出方法
JP4059694B2 (ja) * 2002-03-27 2008-03-12 株式会社日立国際電気 基板処理装置及び半導体装置の製造方法
WO2005010970A1 (ja) * 2003-07-28 2005-02-03 Hitachi Kokusai Electric Inc. 基板処理装置及び基板処理方法
JP4262763B2 (ja) * 2006-08-02 2009-05-13 株式会社ニューフレアテクノロジー 半導体製造装置および半導体製造方法

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