JP5374748B2 - 絶縁膜の形成方法、コンピュータ読み取り可能な記憶媒体および処理システム - Google Patents
絶縁膜の形成方法、コンピュータ読み取り可能な記憶媒体および処理システム Download PDFInfo
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- JP5374748B2 JP5374748B2 JP2008029476A JP2008029476A JP5374748B2 JP 5374748 B2 JP5374748 B2 JP 5374748B2 JP 2008029476 A JP2008029476 A JP 2008029476A JP 2008029476 A JP2008029476 A JP 2008029476A JP 5374748 B2 JP5374748 B2 JP 5374748B2
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Images
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- Chemical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
- Thin Film Transistor (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008029476A JP5374748B2 (ja) | 2008-02-08 | 2008-02-08 | 絶縁膜の形成方法、コンピュータ読み取り可能な記憶媒体および処理システム |
| US12/865,969 US8034179B2 (en) | 2008-02-08 | 2009-02-06 | Method for insulating film formation, storage medium from which information is readable with computer, and processing system |
| KR1020107017596A KR101248651B1 (ko) | 2008-02-08 | 2009-02-06 | 절연막의 형성 방법, 컴퓨터 판독 가능한 기억 매체 및 처리 시스템 |
| TW098103865A TWI445083B (zh) | 2008-02-08 | 2009-02-06 | Insulation film formation method, the computer can read the memory media and processing system |
| PCT/JP2009/052447 WO2009099254A1 (ja) | 2008-02-08 | 2009-02-06 | 絶縁膜の形成方法、コンピュータ読み取り可能な記憶媒体および処理システム |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008029476A JP5374748B2 (ja) | 2008-02-08 | 2008-02-08 | 絶縁膜の形成方法、コンピュータ読み取り可能な記憶媒体および処理システム |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009188348A JP2009188348A (ja) | 2009-08-20 |
| JP2009188348A5 JP2009188348A5 (enrdf_load_stackoverflow) | 2011-03-10 |
| JP5374748B2 true JP5374748B2 (ja) | 2013-12-25 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008029476A Expired - Fee Related JP5374748B2 (ja) | 2008-02-08 | 2008-02-08 | 絶縁膜の形成方法、コンピュータ読み取り可能な記憶媒体および処理システム |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5374748B2 (enrdf_load_stackoverflow) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101807320B1 (ko) | 2009-08-17 | 2017-12-08 | 아사히 가라스 가부시키가이샤 | 용융 유리의 제조 방법, 유리 용융로, 유리 제품의 제조 방법, 및 유리 제품의 제조 장치 |
| JP5663384B2 (ja) * | 2011-04-19 | 2015-02-04 | 三菱電機株式会社 | 絶縁膜の製造方法 |
| US8999773B2 (en) * | 2012-04-05 | 2015-04-07 | Semiconductor Energy Laboratory Co., Ltd. | Processing method of stacked-layer film and manufacturing method of semiconductor device |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0443642A (ja) * | 1990-06-11 | 1992-02-13 | G T C:Kk | ゲート絶縁膜の形成方法 |
| ATE514181T1 (de) * | 2000-03-13 | 2011-07-15 | Tadahiro Ohmi | Verfahren zur ausbildung eines dielektrischen films |
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- 2008-02-08 JP JP2008029476A patent/JP5374748B2/ja not_active Expired - Fee Related
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| Publication number | Publication date |
|---|---|
| JP2009188348A (ja) | 2009-08-20 |
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