JP5372009B2 - オプトエレクトロニクス部品およびその製造方法 - Google Patents

オプトエレクトロニクス部品およびその製造方法 Download PDF

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Publication number
JP5372009B2
JP5372009B2 JP2010538328A JP2010538328A JP5372009B2 JP 5372009 B2 JP5372009 B2 JP 5372009B2 JP 2010538328 A JP2010538328 A JP 2010538328A JP 2010538328 A JP2010538328 A JP 2010538328A JP 5372009 B2 JP5372009 B2 JP 5372009B2
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Japan
Prior art keywords
protective layer
region
optically active
electromagnetic radiation
optoelectronic component
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Expired - Fee Related
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JP2010538328A
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English (en)
Japanese (ja)
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JP2011507198A (ja
JP2011507198A5 (enExample
Inventor
ワルター ヴェグレイター
ノルベルト シュタト
ベルト ブルナー
カール ヴァイドナー
マティアス レブハン
ハンス ヴルケシャ
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Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
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Publication of JP2011507198A5 publication Critical patent/JP2011507198A5/ja
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Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L24/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L24/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
    • H01L25/0753—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H10K50/865—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. light-blocking layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73267—Layer and HDI connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12044—OLED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Device Packages (AREA)
  • Non-Portable Lighting Devices Or Systems Thereof (AREA)
  • Luminescent Compositions (AREA)
JP2010538328A 2007-12-21 2008-12-11 オプトエレクトロニクス部品およびその製造方法 Expired - Fee Related JP5372009B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE102007062045 2007-12-21
DE102007062045.6 2007-12-21
DE102008019902.8 2008-04-21
DE102008019902A DE102008019902A1 (de) 2007-12-21 2008-04-21 Optoelektronisches Bauelement und Herstellungsverfahren für ein optoelektronisches Bauelement
PCT/DE2008/002067 WO2009079985A2 (de) 2007-12-21 2008-12-11 Optoelektronisches bauelement und herstellungsverfahren für ein optoelektronisches bauelement

Publications (3)

Publication Number Publication Date
JP2011507198A JP2011507198A (ja) 2011-03-03
JP2011507198A5 JP2011507198A5 (enExample) 2012-01-19
JP5372009B2 true JP5372009B2 (ja) 2013-12-18

Family

ID=40690073

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010538328A Expired - Fee Related JP5372009B2 (ja) 2007-12-21 2008-12-11 オプトエレクトロニクス部品およびその製造方法

Country Status (8)

Country Link
US (1) US8513682B2 (enExample)
EP (1) EP2223337B1 (enExample)
JP (1) JP5372009B2 (enExample)
KR (1) KR101523408B1 (enExample)
CN (1) CN101904005B (enExample)
DE (1) DE102008019902A1 (enExample)
TW (1) TW200937611A (enExample)
WO (1) WO2009079985A2 (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008025923B4 (de) * 2008-05-30 2020-06-18 Osram Opto Semiconductors Gmbh Strahlungsemittierende Vorrichtung
DE102008045653B4 (de) * 2008-09-03 2020-03-26 Osram Opto Semiconductors Gmbh Optoelektronisches Bauteil
DE102009009483A1 (de) * 2009-02-19 2010-08-26 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer Beleuchtungseinrichtung und Beleuchtungseinrichtung
DE102009042205A1 (de) * 2009-09-18 2011-03-31 Osram Opto Semiconductors Gmbh Optoelektronisches Modul
DE102009058796A1 (de) * 2009-12-18 2011-06-22 OSRAM Opto Semiconductors GmbH, 93055 Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements
DE102010026344A1 (de) * 2010-07-07 2012-01-12 Osram Opto Semiconductors Gmbh Leuchtdiode
DE102010046790A1 (de) * 2010-09-28 2012-03-29 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement und Verfahren zu dessen Herstellung
DE102010055265A1 (de) * 2010-12-20 2012-06-21 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauteil
DE102012101160A1 (de) * 2012-02-14 2013-08-14 Osram Opto Semiconductors Gmbh Lichtquellenmodul
DE102012102301B4 (de) * 2012-03-19 2021-06-17 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterchip und Scheinwerfer mit einem solchen Halbleiterchip
DE102012215524A1 (de) 2012-08-31 2014-03-06 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauteil
AT14563U1 (de) * 2014-03-31 2016-01-15 At&S Austria Technologie & Systemtechnik Ag Verfahren zur Herstellung einer Leiterplatte mit zumindest einer optoelektronischen Komponente
US10388684B2 (en) * 2016-10-04 2019-08-20 Semiconductor Components Industries, Llc Image sensor packages formed using temporary protection layers and related methods
WO2018153744A1 (en) * 2017-02-21 2018-08-30 Lumileds Holding B.V. ARRAY OF LIGHT SOURCES COMPRISING MULTIPLE VCSELs
US11424226B2 (en) 2018-03-05 2022-08-23 Osram Opto Semiconductors Gmbh Light-emitting device and method for producing a plurality of light-emitting devices
JP6846017B2 (ja) * 2018-06-08 2021-03-24 日亜化学工業株式会社 発光装置およびその製造方法
DE102019121881A1 (de) * 2019-08-14 2021-02-18 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches bauelement und verfahren zur herstellung eines optoelektronischen bauelements

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5577876U (enExample) * 1978-11-24 1980-05-29
JPS60253286A (ja) * 1984-05-29 1985-12-13 Rohm Co Ltd メサエツチング分離型モノリシツク表示発光ダイオ−ド
JPS62199073A (ja) * 1986-02-27 1987-09-02 Yokogawa Medical Syst Ltd 発光ダイオ−ドアレイ
JPS6471187A (en) * 1987-09-11 1989-03-16 Stanley Electric Co Ltd Light emitting diode array
WO1997048138A2 (en) * 1996-06-11 1997-12-18 Philips Electronics N.V. Visible light emitting devices including uv-light emitting diode and uv-excitable, visible light emitting phosphor, and method of producing such devices
EP2169733B1 (de) 1997-09-29 2017-07-19 OSRAM Opto Semiconductors GmbH Halbleiterlichtquelle
JPH11238915A (ja) * 1998-02-19 1999-08-31 Stanley Electric Co Ltd 発光ダイオードアレイ
US6410942B1 (en) * 1999-12-03 2002-06-25 Cree Lighting Company Enhanced light extraction through the use of micro-LED arrays
US20020017652A1 (en) * 2000-08-08 2002-02-14 Stefan Illek Semiconductor chip for optoelectronics
US7547921B2 (en) * 2000-08-08 2009-06-16 Osram Opto Semiconductors Gmbh Semiconductor chip for optoelectronics
WO2003012884A1 (en) * 2001-08-01 2003-02-13 Nam-Young Kim Display system
JP3724725B2 (ja) * 2001-11-01 2005-12-07 ソニー株式会社 表示装置の製造方法
JP2003209280A (ja) 2002-01-11 2003-07-25 Hitachi Cable Ltd 発光ダイオードアレイ
DE10339985B4 (de) * 2003-08-29 2008-12-04 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement mit einer transparenten Kontaktschicht und Verfahren zu dessen Herstellung
DE102004021233A1 (de) * 2004-04-30 2005-12-01 Osram Opto Semiconductors Gmbh Leuchtdiodenanordnung
JP4667803B2 (ja) 2004-09-14 2011-04-13 日亜化学工業株式会社 発光装置
DE102004050371A1 (de) * 2004-09-30 2006-04-13 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement mit einer drahtlosen Kontaktierung
US20060082297A1 (en) * 2004-10-19 2006-04-20 Eastman Kodak Company Method of preparing a lens-less LED
DE102005041099A1 (de) * 2005-08-30 2007-03-29 Osram Opto Semiconductors Gmbh LED-Chip mit Glasbeschichtung und planarer Aufbau- und Verbindungstechnik
DE102006015115A1 (de) 2006-03-31 2007-10-04 Osram Opto Semiconductors Gmbh Elektronisches Modul und Verfahren zum Herstellen eines elektronischen Moduls
DE102007011123A1 (de) * 2007-03-07 2008-09-11 Osram Opto Semiconductors Gmbh Licht emittierendes Modul und Herstellungsverfahren für ein Licht emittierendes Modul

Also Published As

Publication number Publication date
US20100301355A1 (en) 2010-12-02
JP2011507198A (ja) 2011-03-03
TW200937611A (en) 2009-09-01
DE102008019902A1 (de) 2009-06-25
US8513682B2 (en) 2013-08-20
KR20100114042A (ko) 2010-10-22
WO2009079985A2 (de) 2009-07-02
EP2223337A2 (de) 2010-09-01
KR101523408B1 (ko) 2015-05-27
EP2223337B1 (de) 2018-08-29
WO2009079985A3 (de) 2009-10-15
CN101904005A (zh) 2010-12-01
CN101904005B (zh) 2013-11-27

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