JP5371143B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP5371143B2
JP5371143B2 JP2007265332A JP2007265332A JP5371143B2 JP 5371143 B2 JP5371143 B2 JP 5371143B2 JP 2007265332 A JP2007265332 A JP 2007265332A JP 2007265332 A JP2007265332 A JP 2007265332A JP 5371143 B2 JP5371143 B2 JP 5371143B2
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Japan
Prior art keywords
layer
tube
film
insulating layer
opening
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Expired - Fee Related
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JP2007265332A
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Japanese (ja)
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JP2008118123A5 (enExample
JP2008118123A (ja
Inventor
幸一郎 田中
将文 森末
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2007265332A priority Critical patent/JP5371143B2/ja
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Publication of JP2008118123A5 publication Critical patent/JP2008118123A5/ja
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  • Electroluminescent Light Sources (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Thin Film Transistor (AREA)
JP2007265332A 2006-10-12 2007-10-11 半導体装置の作製方法 Expired - Fee Related JP5371143B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007265332A JP5371143B2 (ja) 2006-10-12 2007-10-11 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2006279206 2006-10-12
JP2006279206 2006-10-12
JP2007265332A JP5371143B2 (ja) 2006-10-12 2007-10-11 半導体装置の作製方法

Publications (3)

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JP2008118123A JP2008118123A (ja) 2008-05-22
JP2008118123A5 JP2008118123A5 (enExample) 2010-11-25
JP5371143B2 true JP5371143B2 (ja) 2013-12-18

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Family Applications (1)

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JP2007265332A Expired - Fee Related JP5371143B2 (ja) 2006-10-12 2007-10-11 半導体装置の作製方法

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Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010040567A (ja) * 2008-07-31 2010-02-18 Tokyo Electron Ltd 酸化膜表面の洗浄及び保護方法および酸化膜表面の洗浄及び保護装置
KR101634411B1 (ko) * 2008-10-31 2016-06-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 구동 회로, 표시 장치 및 전자 장치
KR101476817B1 (ko) 2009-07-03 2014-12-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 트랜지스터를 갖는 표시 장치 및 그 제작 방법
KR102162746B1 (ko) 2009-10-21 2020-10-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 아날로그 회로 및 반도체 장치
CN210110300U (zh) * 2019-08-16 2020-02-21 北京京东方技术开发有限公司 像素驱动电路、阵列基板和显示装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5271798A (en) * 1993-03-29 1993-12-21 Micron Technology, Inc. Method for selective removal of a material from a wafer's alignment marks
US6290863B1 (en) * 1999-07-31 2001-09-18 Micron Technology, Inc. Method and apparatus for etch of a specific subarea of a semiconductor work object
DE10053198C2 (de) * 2000-10-26 2003-01-02 Infineon Technologies Ag Verfahren zum lokalen Ätzen
JP5025095B2 (ja) * 2004-05-07 2012-09-12 株式会社半導体エネルギー研究所 半導体装置の作製方法

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JP2008118123A (ja) 2008-05-22

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