JP5367739B2 - 磁気抵抗効果素子およびそれを用いた磁気ランダムアクセスメモリ - Google Patents

磁気抵抗効果素子およびそれを用いた磁気ランダムアクセスメモリ Download PDF

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JP5367739B2
JP5367739B2 JP2011022105A JP2011022105A JP5367739B2 JP 5367739 B2 JP5367739 B2 JP 5367739B2 JP 2011022105 A JP2011022105 A JP 2011022105A JP 2011022105 A JP2011022105 A JP 2011022105A JP 5367739 B2 JP5367739 B2 JP 5367739B2
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film
magnetization
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JP2011119755A5 (enExample
JP2011119755A (ja
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川 将 寿 吉
川 英 二 北
坊 忠 臣 大
瀬 俊 彦 永
達 也 岸
田 博 明 與
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Toshiba Corp
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JP2011022105A 2011-02-03 2011-02-03 磁気抵抗効果素子およびそれを用いた磁気ランダムアクセスメモリ Active JP5367739B2 (ja)

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JP2011022105A JP5367739B2 (ja) 2011-02-03 2011-02-03 磁気抵抗効果素子およびそれを用いた磁気ランダムアクセスメモリ

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JP2011022105A JP5367739B2 (ja) 2011-02-03 2011-02-03 磁気抵抗効果素子およびそれを用いた磁気ランダムアクセスメモリ

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JP2007248251A Division JP4738395B2 (ja) 2007-09-25 2007-09-25 磁気抵抗効果素子およびそれを用いた磁気ランダムアクセスメモリ

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JP2011119755A JP2011119755A (ja) 2011-06-16
JP2011119755A5 JP2011119755A5 (enExample) 2011-07-28
JP5367739B2 true JP5367739B2 (ja) 2013-12-11

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Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101831931B1 (ko) 2011-08-10 2018-02-26 삼성전자주식회사 외인성 수직 자화 구조를 구비하는 자기 메모리 장치
JP5836163B2 (ja) 2012-03-08 2015-12-24 ルネサスエレクトロニクス株式会社 磁気メモリセル、磁気メモリセルの製造方法
JP5597899B2 (ja) * 2012-09-21 2014-10-01 株式会社東芝 磁気抵抗素子および磁気メモリ
JP6244617B2 (ja) * 2012-09-28 2017-12-13 ソニー株式会社 記憶素子、記憶装置、磁気ヘッド
US9461242B2 (en) 2013-09-13 2016-10-04 Micron Technology, Inc. Magnetic memory cells, methods of fabrication, semiconductor devices, memory systems, and electronic systems
US9608197B2 (en) 2013-09-18 2017-03-28 Micron Technology, Inc. Memory cells, methods of fabrication, and semiconductor devices
JP6180972B2 (ja) 2014-03-13 2017-08-16 株式会社東芝 磁気抵抗素子および磁気メモリ
JP6054326B2 (ja) 2014-03-13 2016-12-27 株式会社東芝 磁気抵抗素子および磁気メモリ
US9281466B2 (en) 2014-04-09 2016-03-08 Micron Technology, Inc. Memory cells, semiconductor structures, semiconductor devices, and methods of fabrication
US9349945B2 (en) 2014-10-16 2016-05-24 Micron Technology, Inc. Memory cells, semiconductor devices, and methods of fabrication
US9768377B2 (en) 2014-12-02 2017-09-19 Micron Technology, Inc. Magnetic cell structures, and methods of fabrication
US10439131B2 (en) 2015-01-15 2019-10-08 Micron Technology, Inc. Methods of forming semiconductor devices including tunnel barrier materials
US10475564B2 (en) * 2016-06-29 2019-11-12 Taiwan Semiconductor Manufacturing Company, Ltd. Perpendicularly magnetized ferromagnetic layers having an oxide interface allowing for improved control of oxidation
WO2018029883A1 (ja) * 2016-08-10 2018-02-15 アルプス電気株式会社 交換結合膜ならびにこれを用いた磁気抵抗効果素子および磁気検出装置
JP2018056389A (ja) * 2016-09-29 2018-04-05 Tdk株式会社 磁気抵抗効果素子

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003197872A (ja) * 2001-12-26 2003-07-11 Canon Inc 磁気抵抗効果膜を用いたメモリ
JP3824600B2 (ja) * 2003-07-30 2006-09-20 株式会社東芝 磁気抵抗効果素子および磁気メモリ
US6967863B2 (en) * 2004-02-25 2005-11-22 Grandis, Inc. Perpendicular magnetization magnetic element utilizing spin transfer
JP5096702B2 (ja) * 2005-07-28 2012-12-12 株式会社日立製作所 磁気抵抗効果素子及びそれを搭載した不揮発性磁気メモリ
JP4444241B2 (ja) * 2005-10-19 2010-03-31 株式会社東芝 磁気抵抗効果素子、磁気ランダムアクセスメモリ、電子カード及び電子装置
JP2007150265A (ja) * 2005-10-28 2007-06-14 Toshiba Corp 磁気抵抗効果素子および磁気記憶装置
JP5429480B2 (ja) * 2007-04-24 2014-02-26 日本電気株式会社 磁気抵抗素子、ｍｒａｍ、及び磁気センサー

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