JP5357441B2 - 固体撮像装置の製造方法 - Google Patents

固体撮像装置の製造方法 Download PDF

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Publication number
JP5357441B2
JP5357441B2 JP2008098166A JP2008098166A JP5357441B2 JP 5357441 B2 JP5357441 B2 JP 5357441B2 JP 2008098166 A JP2008098166 A JP 2008098166A JP 2008098166 A JP2008098166 A JP 2008098166A JP 5357441 B2 JP5357441 B2 JP 5357441B2
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Japan
Prior art keywords
region
film
metal wiring
insulating film
imaging device
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Expired - Fee Related
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JP2008098166A
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English (en)
Japanese (ja)
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JP2009252949A (ja
JP2009252949A5 (enExample
Inventor
剛宏 豊田
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Canon Inc
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Canon Inc
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Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2008098166A priority Critical patent/JP5357441B2/ja
Priority to US12/416,228 priority patent/US8440493B2/en
Publication of JP2009252949A publication Critical patent/JP2009252949A/ja
Publication of JP2009252949A5 publication Critical patent/JP2009252949A5/ja
Priority to US13/837,766 priority patent/US8766340B2/en
Application granted granted Critical
Publication of JP5357441B2 publication Critical patent/JP5357441B2/ja
Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters

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  • Solid State Image Pick-Up Elements (AREA)
JP2008098166A 2008-04-04 2008-04-04 固体撮像装置の製造方法 Expired - Fee Related JP5357441B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2008098166A JP5357441B2 (ja) 2008-04-04 2008-04-04 固体撮像装置の製造方法
US12/416,228 US8440493B2 (en) 2008-04-04 2009-04-01 Solid-state imaging apparatus and manufacturing method thereof
US13/837,766 US8766340B2 (en) 2008-04-04 2013-03-15 Solid-state imaging apparatus and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008098166A JP5357441B2 (ja) 2008-04-04 2008-04-04 固体撮像装置の製造方法

Publications (3)

Publication Number Publication Date
JP2009252949A JP2009252949A (ja) 2009-10-29
JP2009252949A5 JP2009252949A5 (enExample) 2011-05-19
JP5357441B2 true JP5357441B2 (ja) 2013-12-04

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Family Applications (1)

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JP2008098166A Expired - Fee Related JP5357441B2 (ja) 2008-04-04 2008-04-04 固体撮像装置の製造方法

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US (2) US8440493B2 (enExample)
JP (1) JP5357441B2 (enExample)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9232968B2 (en) 2007-12-19 2016-01-12 DePuy Synthes Products, Inc. Polymeric pedicle rods and methods of manufacturing
US8641734B2 (en) 2009-02-13 2014-02-04 DePuy Synthes Products, LLC Dual spring posterior dynamic stabilization device with elongation limiting elastomers
US9320543B2 (en) 2009-06-25 2016-04-26 DePuy Synthes Products, Inc. Posterior dynamic stabilization device having a mobile anchor
US9445844B2 (en) 2010-03-24 2016-09-20 DePuy Synthes Products, Inc. Composite material posterior dynamic stabilization spring rod
JP5651986B2 (ja) 2010-04-02 2015-01-14 ソニー株式会社 固体撮像装置とその製造方法、並びに電子機器及びカメラモジュール
KR101769969B1 (ko) * 2010-06-14 2017-08-21 삼성전자주식회사 광 블랙 영역 및 활성 화소 영역 사이의 차광 패턴을 갖는 이미지 센서
JP2012038986A (ja) * 2010-08-10 2012-02-23 Sony Corp 固体撮像装置とその製造方法、並びに電子機器
JP5783741B2 (ja) 2011-02-09 2015-09-24 キヤノン株式会社 固体撮像装置、及び固体撮像装置の製造方法
CN106449676A (zh) 2011-07-19 2017-02-22 索尼公司 半导体装置和电子设备
JP5987275B2 (ja) * 2011-07-25 2016-09-07 ソニー株式会社 固体撮像装置、固体撮像装置の製造方法、および電子機器
US9013022B2 (en) 2011-08-04 2015-04-21 Taiwan Semiconductor Manufacturing Company, Ltd. Pad structure including glue layer and non-low-k dielectric layer in BSI image sensor chips
JP6029266B2 (ja) * 2011-08-09 2016-11-24 キヤノン株式会社 撮像装置、撮像システムおよび撮像装置の製造方法
US9224773B2 (en) * 2011-11-30 2015-12-29 Taiwan Semiconductor Manufacturing Company, Ltd. Metal shielding layer in backside illumination image sensor chips and methods for forming the same
CN103390625B (zh) * 2012-05-10 2016-03-23 台湾积体电路制造股份有限公司 用于bsi图像传感器的背面结构和方法
US9401380B2 (en) 2012-05-10 2016-07-26 Taiwan Semiconductor Manufacturing Company, Ltd. Backside structure and methods for BSI image sensors
US9356058B2 (en) * 2012-05-10 2016-05-31 Taiwan Semiconductor Manufacturing Company, Ltd. Backside structure for BSI image sensor
CN103390624B (zh) * 2012-05-10 2016-09-07 台湾积体电路制造股份有限公司 用于bsi图像传感器的背面结构
US8709854B2 (en) 2012-05-10 2014-04-29 Taiwan Semiconductor Manufacturing Company, Ltd. Backside structure and methods for BSI image sensors
JP6039294B2 (ja) * 2012-08-07 2016-12-07 キヤノン株式会社 半導体装置の製造方法
US11335721B2 (en) 2013-11-06 2022-05-17 Taiwan Semiconductor Manufacturing Co., Ltd. Backside illuminated image sensor device with shielding layer
KR102136852B1 (ko) 2013-12-30 2020-07-22 삼성전자 주식회사 Tfa 기반의 시모스 이미지 센서 및 그 동작방법
US10249661B2 (en) * 2014-08-22 2019-04-02 Visera Technologies Company Limited Imaging devices with dummy patterns
JP2016133510A (ja) 2015-01-16 2016-07-25 パーソナル ジェノミクス タイワン インコーポレイテッドＰｅｒｓｏｎａｌ Ｇｅｎｏｍｉｃｓ Ｔａｉｗａｎ，Ｉｎｃ． 導光機能を有する光学センサー及びその製造方法
TWI550842B (zh) * 2015-04-09 2016-09-21 力晶科技股份有限公司 影像感應器
WO2017169231A1 (ja) * 2016-03-31 2017-10-05 ソニー株式会社 撮像素子および電子機器
JP2018046145A (ja) * 2016-09-14 2018-03-22 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子、撮像装置、及び固体撮像素子の製造方法
CN110085684A (zh) * 2019-04-30 2019-08-02 德淮半导体有限公司 光电装置及其制造方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000150846A (ja) 1998-11-12 2000-05-30 Olympus Optical Co Ltd 固体撮像装置及びその製造方法
JP2001339059A (ja) * 2000-05-29 2001-12-07 Sony Corp 固体撮像素子の製造方法
JP4298276B2 (ja) 2002-12-03 2009-07-15 キヤノン株式会社 光電変換装置
JP2005057024A (ja) * 2003-08-04 2005-03-03 Matsushita Electric Ind Co Ltd 固体撮像装置、固体撮像装置の製造方法、カメラ
KR100672995B1 (ko) * 2005-02-02 2007-01-24 삼성전자주식회사 이미지 센서의 제조 방법 및 그에 의해 형성된 이미지 센서
JP2006229206A (ja) 2005-02-14 2006-08-31 Samsung Electronics Co Ltd 向上された感度を有するイメージセンサ及びその製造方法
KR100807214B1 (ko) * 2005-02-14 2008-03-03 삼성전자주식회사 향상된 감도를 갖는 이미지 센서 및 그 제조 방법
JP2006286873A (ja) 2005-03-31 2006-10-19 Fuji Photo Film Co Ltd 固体撮像素子およびその製造方法
JP4944399B2 (ja) * 2005-07-04 2012-05-30 キヤノン株式会社 固体撮像装置
KR100731128B1 (ko) * 2005-12-28 2007-06-22 동부일렉트로닉스 주식회사 씨모스 이미지 센서의 제조방법
JP4315457B2 (ja) * 2006-08-31 2009-08-19 キヤノン株式会社 光電変換装置及び撮像システム
JP5159120B2 (ja) 2007-02-23 2013-03-06 キヤノン株式会社 光電変換装置およびその製造方法
JP2008270423A (ja) * 2007-04-18 2008-11-06 Rosnes:Kk 固体撮像装置
JP2009146957A (ja) * 2007-12-12 2009-07-02 Panasonic Corp 固体撮像装置及び固体撮像装置の製造方法

Also Published As

Publication number Publication date
JP2009252949A (ja) 2009-10-29
US8440493B2 (en) 2013-05-14
US8766340B2 (en) 2014-07-01
US20090251573A1 (en) 2009-10-08
US20130200478A1 (en) 2013-08-08

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