JP5356815B2 - 光変換素子を備えたエレクトロルミネッセンス素子 - Google Patents

光変換素子を備えたエレクトロルミネッセンス素子 Download PDF

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Publication number
JP5356815B2
JP5356815B2 JP2008527549A JP2008527549A JP5356815B2 JP 5356815 B2 JP5356815 B2 JP 5356815B2 JP 2008527549 A JP2008527549 A JP 2008527549A JP 2008527549 A JP2008527549 A JP 2008527549A JP 5356815 B2 JP5356815 B2 JP 5356815B2
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Prior art keywords
light
conversion
primary
light source
source according
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JP2008527549A
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English (en)
Japanese (ja)
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JP2009506491A (ja
JP2009506491A5 (enExample
Inventor
グンナー リュートゲンス
アルブレヒト クラウス
ベノ シュピンガー
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Koninklijke Philips NV
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Koninklijke Philips NV
Koninklijke Philips Electronics NV
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Publication of JP2009506491A5 publication Critical patent/JP2009506491A5/ja
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8516—Wavelength conversion means having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer or wavelength conversion layer with a concentration gradient
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings

Landscapes

  • Led Device Packages (AREA)
  • Semiconductor Lasers (AREA)
  • Electroluminescent Light Sources (AREA)
JP2008527549A 2005-08-24 2006-08-14 光変換素子を備えたエレクトロルミネッセンス素子 Active JP5356815B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP05107762 2005-08-24
EP05107762.6 2005-08-24
PCT/IB2006/052798 WO2007023412A2 (en) 2005-08-24 2006-08-14 Electroluminescent device with a light conversion element

Publications (3)

Publication Number Publication Date
JP2009506491A JP2009506491A (ja) 2009-02-12
JP2009506491A5 JP2009506491A5 (enExample) 2009-10-01
JP5356815B2 true JP5356815B2 (ja) 2013-12-04

Family

ID=37716212

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008527549A Active JP5356815B2 (ja) 2005-08-24 2006-08-14 光変換素子を備えたエレクトロルミネッセンス素子

Country Status (7)

Country Link
US (1) US7642707B2 (enExample)
EP (1) EP1922765B1 (enExample)
JP (1) JP5356815B2 (enExample)
KR (1) KR20080040769A (enExample)
CN (1) CN101248534A (enExample)
TW (1) TW200713643A (enExample)
WO (1) WO2007023412A2 (enExample)

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* Cited by examiner, † Cited by third party
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US20090014733A1 (en) * 2006-03-06 2009-01-15 Koninklijke Philips Electronics N.V. Light-emitting diode module
TW200822403A (en) * 2006-10-12 2008-05-16 Matsushita Electric Industrial Co Ltd Light-emitting device and method for manufacturing the same
US9401461B2 (en) * 2007-07-11 2016-07-26 Cree, Inc. LED chip design for white conversion
CN101828136B (zh) * 2007-10-16 2012-12-05 皇家飞利浦电子股份有限公司 用于背光应用的侧面发光led光源
DE102008046523B4 (de) * 2008-09-10 2020-10-29 Osram Gmbh Leuchtmittel
TWI411091B (zh) * 2008-10-13 2013-10-01 華新麗華股份有限公司 發光二極體封裝結構
US20100117106A1 (en) * 2008-11-07 2010-05-13 Ledengin, Inc. Led with light-conversion layer
US8138509B2 (en) * 2009-02-27 2012-03-20 Visera Technologies Company, Limited Light emitting device having luminescent layer with opening to exposed bond pad on light emitting die for wire bonding pad to substrate
JP5662939B2 (ja) * 2009-05-22 2015-02-04 パナソニックＩｐマネジメント株式会社 半導体発光装置及びそれを用いた光源装置
CN102918665B (zh) 2010-03-16 2016-06-22 皇家飞利浦电子股份有限公司 照明装置
CN102444806B (zh) * 2010-10-14 2014-07-02 展晶科技(深圳)有限公司 照明装置
DE102012202928A1 (de) * 2012-02-27 2013-08-29 Osram Gmbh Lichtquelle mit led-chip und leuchtstoffschicht
US8754435B1 (en) 2013-02-19 2014-06-17 Cooledge Lighting Inc. Engineered-phosphor LED package and related methods
US8933478B2 (en) 2013-02-19 2015-01-13 Cooledge Lighting Inc. Engineered-phosphor LED packages and related methods
US10434202B2 (en) 2015-06-26 2019-10-08 Kenall Manufacturing Company Lighting device that deactivates dangerous pathogens while providing visually appealing light
KR102205782B1 (ko) 2015-06-26 2021-01-21 켄넬 매뉴팩처링 컴퍼니 병원균을 불활성화시키기에 충분한 적분 방사 조도값을 산출하기 위해 최소량의 전력을 출력하는 단일 에미터 조명 장치
US10771155B2 (en) 2017-09-28 2020-09-08 Soraa Laser Diode, Inc. Intelligent visible light with a gallium and nitrogen containing laser source
CN110195827A (zh) * 2018-02-26 2019-09-03 上海午井光电科技有限公司 设有光路与光波重整组件的透射式激光照明系统
US11757250B2 (en) 2019-12-23 2023-09-12 Kyocera Sld Laser, Inc. Specialized mobile light device configured with a gallium and nitrogen containing laser source
KR102436024B1 (ko) * 2020-02-26 2022-08-24 주식회사 케이티앤지 광학 모듈 및 이를 포함하는 에어로졸 생성 장치

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JPS48102585A (enExample) * 1972-04-04 1973-12-22
TW386609U (en) * 1996-10-15 2000-04-01 Koninkl Philips Electronics Nv Electroluminescent illumination apparatus
TW413956B (en) 1998-07-28 2000-12-01 Sumitomo Electric Industries Fluorescent substrate LED
DE10010638A1 (de) 2000-03-03 2001-09-13 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines lichtabstrahlenden Halbleiterkörpers mit Lumineszenzkonversionselement
TW480744B (en) 2000-03-14 2002-03-21 Lumileds Lighting Bv Light-emitting diode, lighting device and method of manufacturing same
US6653765B1 (en) * 2000-04-17 2003-11-25 General Electric Company Uniform angular light distribution from LEDs
US6737681B2 (en) * 2001-08-22 2004-05-18 Nichia Corporation Light emitting device with fluorescent member excited by semiconductor light emitting element
US7192161B1 (en) * 2001-10-18 2007-03-20 Ilight Technologies, Inc. Fluorescent illumination device
US6744077B2 (en) 2002-09-27 2004-06-01 Lumileds Lighting U.S., Llc Selective filtering of wavelength-converted semiconductor light emitting devices
US6922024B2 (en) * 2002-11-25 2005-07-26 Matsushita Electric Industrial Co., Ltd. LED lamp
US7245072B2 (en) * 2003-01-27 2007-07-17 3M Innovative Properties Company Phosphor based light sources having a polymeric long pass reflector
US7312560B2 (en) * 2003-01-27 2007-12-25 3M Innovative Properties Phosphor based light sources having a non-planar long pass reflector and method of making
US7118438B2 (en) * 2003-01-27 2006-10-10 3M Innovative Properties Company Methods of making phosphor based light sources having an interference reflector
WO2004068603A2 (en) * 2003-01-27 2004-08-12 3M Innovative Properties Company Phosphor based light source component and method of making
JP4123057B2 (ja) * 2003-05-26 2008-07-23 松下電工株式会社 発光装置及びその製造方法
CN100511732C (zh) * 2003-06-18 2009-07-08 丰田合成株式会社 发光器件
US7462983B2 (en) * 2003-06-27 2008-12-09 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. White light emitting device
US7553683B2 (en) * 2004-06-09 2009-06-30 Philips Lumiled Lighting Co., Llc Method of forming pre-fabricated wavelength converting elements for semiconductor light emitting devices
DE102004047727B4 (de) * 2004-09-30 2018-01-18 Osram Opto Semiconductors Gmbh Lumineszenzdiodenchip mit einer Konverterschicht und Verfahren zur Herstellung eines Lumineszenzdiodenchips mit einer Konverterschicht

Also Published As

Publication number Publication date
US7642707B2 (en) 2010-01-05
KR20080040769A (ko) 2008-05-08
WO2007023412A2 (en) 2007-03-01
CN101248534A (zh) 2008-08-20
TW200713643A (en) 2007-04-01
EP1922765A2 (en) 2008-05-21
JP2009506491A (ja) 2009-02-12
WO2007023412A3 (en) 2007-10-18
US20080232085A1 (en) 2008-09-25
EP1922765B1 (en) 2012-12-26

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