KR20080040769A - 혼합 광을 방출하는 광원 - Google Patents

혼합 광을 방출하는 광원 Download PDF

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Publication number
KR20080040769A
KR20080040769A KR1020087006925A KR20087006925A KR20080040769A KR 20080040769 A KR20080040769 A KR 20080040769A KR 1020087006925 A KR1020087006925 A KR 1020087006925A KR 20087006925 A KR20087006925 A KR 20087006925A KR 20080040769 A KR20080040769 A KR 20080040769A
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KR
South Korea
Prior art keywords
light
primary
primary light
conversion
conversion element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020087006925A
Other languages
English (en)
Korean (ko)
Inventor
구나르 루에트겐스
알브레흐트 크라우스
벤노 스핀게르
Original Assignee
코닌클리즈케 필립스 일렉트로닉스 엔.브이.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 코닌클리즈케 필립스 일렉트로닉스 엔.브이. filed Critical 코닌클리즈케 필립스 일렉트로닉스 엔.브이.
Publication of KR20080040769A publication Critical patent/KR20080040769A/ko
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8516—Wavelength conversion means having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer or wavelength conversion layer with a concentration gradient
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings

Landscapes

  • Led Device Packages (AREA)
  • Semiconductor Lasers (AREA)
  • Electroluminescent Light Sources (AREA)
KR1020087006925A 2005-08-24 2006-08-14 혼합 광을 방출하는 광원 Ceased KR20080040769A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP05107762 2005-08-24
EP05107762.6 2005-08-24

Publications (1)

Publication Number Publication Date
KR20080040769A true KR20080040769A (ko) 2008-05-08

Family

ID=37716212

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020087006925A Ceased KR20080040769A (ko) 2005-08-24 2006-08-14 혼합 광을 방출하는 광원

Country Status (7)

Country Link
US (1) US7642707B2 (enExample)
EP (1) EP1922765B1 (enExample)
JP (1) JP5356815B2 (enExample)
KR (1) KR20080040769A (enExample)
CN (1) CN101248534A (enExample)
TW (1) TW200713643A (enExample)
WO (1) WO2007023412A2 (enExample)

Cited By (1)

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WO2021172717A1 (en) * 2020-02-26 2021-09-02 Kt&G Corporation Optical module and aerosol generating device comprising thereof

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US20090014733A1 (en) * 2006-03-06 2009-01-15 Koninklijke Philips Electronics N.V. Light-emitting diode module
TW200822403A (en) * 2006-10-12 2008-05-16 Matsushita Electric Industrial Co Ltd Light-emitting device and method for manufacturing the same
US9401461B2 (en) * 2007-07-11 2016-07-26 Cree, Inc. LED chip design for white conversion
CN101828136B (zh) * 2007-10-16 2012-12-05 皇家飞利浦电子股份有限公司 用于背光应用的侧面发光led光源
DE102008046523B4 (de) * 2008-09-10 2020-10-29 Osram Gmbh Leuchtmittel
TWI411091B (zh) * 2008-10-13 2013-10-01 華新麗華股份有限公司 發光二極體封裝結構
US20100117106A1 (en) * 2008-11-07 2010-05-13 Ledengin, Inc. Led with light-conversion layer
US8138509B2 (en) * 2009-02-27 2012-03-20 Visera Technologies Company, Limited Light emitting device having luminescent layer with opening to exposed bond pad on light emitting die for wire bonding pad to substrate
JP5662939B2 (ja) * 2009-05-22 2015-02-04 パナソニックＩｐマネジメント株式会社 半導体発光装置及びそれを用いた光源装置
CN102918665B (zh) 2010-03-16 2016-06-22 皇家飞利浦电子股份有限公司 照明装置
CN102444806B (zh) * 2010-10-14 2014-07-02 展晶科技(深圳)有限公司 照明装置
DE102012202928A1 (de) * 2012-02-27 2013-08-29 Osram Gmbh Lichtquelle mit led-chip und leuchtstoffschicht
US8754435B1 (en) 2013-02-19 2014-06-17 Cooledge Lighting Inc. Engineered-phosphor LED package and related methods
US8933478B2 (en) 2013-02-19 2015-01-13 Cooledge Lighting Inc. Engineered-phosphor LED packages and related methods
US10434202B2 (en) 2015-06-26 2019-10-08 Kenall Manufacturing Company Lighting device that deactivates dangerous pathogens while providing visually appealing light
KR102205782B1 (ko) 2015-06-26 2021-01-21 켄넬 매뉴팩처링 컴퍼니 병원균을 불활성화시키기에 충분한 적분 방사 조도값을 산출하기 위해 최소량의 전력을 출력하는 단일 에미터 조명 장치
US10771155B2 (en) 2017-09-28 2020-09-08 Soraa Laser Diode, Inc. Intelligent visible light with a gallium and nitrogen containing laser source
CN110195827A (zh) * 2018-02-26 2019-09-03 上海午井光电科技有限公司 设有光路与光波重整组件的透射式激光照明系统
US11757250B2 (en) 2019-12-23 2023-09-12 Kyocera Sld Laser, Inc. Specialized mobile light device configured with a gallium and nitrogen containing laser source

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JPS48102585A (enExample) * 1972-04-04 1973-12-22
TW386609U (en) * 1996-10-15 2000-04-01 Koninkl Philips Electronics Nv Electroluminescent illumination apparatus
TW413956B (en) 1998-07-28 2000-12-01 Sumitomo Electric Industries Fluorescent substrate LED
DE10010638A1 (de) 2000-03-03 2001-09-13 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines lichtabstrahlenden Halbleiterkörpers mit Lumineszenzkonversionselement
TW480744B (en) 2000-03-14 2002-03-21 Lumileds Lighting Bv Light-emitting diode, lighting device and method of manufacturing same
US6653765B1 (en) * 2000-04-17 2003-11-25 General Electric Company Uniform angular light distribution from LEDs
US6737681B2 (en) * 2001-08-22 2004-05-18 Nichia Corporation Light emitting device with fluorescent member excited by semiconductor light emitting element
US7192161B1 (en) * 2001-10-18 2007-03-20 Ilight Technologies, Inc. Fluorescent illumination device
US6744077B2 (en) 2002-09-27 2004-06-01 Lumileds Lighting U.S., Llc Selective filtering of wavelength-converted semiconductor light emitting devices
US6922024B2 (en) * 2002-11-25 2005-07-26 Matsushita Electric Industrial Co., Ltd. LED lamp
US7245072B2 (en) * 2003-01-27 2007-07-17 3M Innovative Properties Company Phosphor based light sources having a polymeric long pass reflector
US7312560B2 (en) * 2003-01-27 2007-12-25 3M Innovative Properties Phosphor based light sources having a non-planar long pass reflector and method of making
US7118438B2 (en) * 2003-01-27 2006-10-10 3M Innovative Properties Company Methods of making phosphor based light sources having an interference reflector
WO2004068603A2 (en) * 2003-01-27 2004-08-12 3M Innovative Properties Company Phosphor based light source component and method of making
JP4123057B2 (ja) * 2003-05-26 2008-07-23 松下電工株式会社 発光装置及びその製造方法
CN100511732C (zh) * 2003-06-18 2009-07-08 丰田合成株式会社 发光器件
US7462983B2 (en) * 2003-06-27 2008-12-09 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. White light emitting device
US7553683B2 (en) * 2004-06-09 2009-06-30 Philips Lumiled Lighting Co., Llc Method of forming pre-fabricated wavelength converting elements for semiconductor light emitting devices
DE102004047727B4 (de) * 2004-09-30 2018-01-18 Osram Opto Semiconductors Gmbh Lumineszenzdiodenchip mit einer Konverterschicht und Verfahren zur Herstellung eines Lumineszenzdiodenchips mit einer Konverterschicht

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021172717A1 (en) * 2020-02-26 2021-09-02 Kt&G Corporation Optical module and aerosol generating device comprising thereof
US12008925B2 (en) 2020-02-26 2024-06-11 Kt&G Corporation Optical module and aerosol generating device comprising thereof

Also Published As

Publication number Publication date
US7642707B2 (en) 2010-01-05
WO2007023412A2 (en) 2007-03-01
CN101248534A (zh) 2008-08-20
TW200713643A (en) 2007-04-01
EP1922765A2 (en) 2008-05-21
JP2009506491A (ja) 2009-02-12
WO2007023412A3 (en) 2007-10-18
US20080232085A1 (en) 2008-09-25
JP5356815B2 (ja) 2013-12-04
EP1922765B1 (en) 2012-12-26

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