JP5352045B2 - 集積回路装置の作製方法 - Google Patents

集積回路装置の作製方法 Download PDF

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Publication number
JP5352045B2
JP5352045B2 JP2006153016A JP2006153016A JP5352045B2 JP 5352045 B2 JP5352045 B2 JP 5352045B2 JP 2006153016 A JP2006153016 A JP 2006153016A JP 2006153016 A JP2006153016 A JP 2006153016A JP 5352045 B2 JP5352045 B2 JP 5352045B2
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Japan
Prior art keywords
substrate
layer
dlc
film
adhesive
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Expired - Fee Related
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JP2006153016A
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English (en)
Japanese (ja)
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JP2007013131A (ja
JP2007013131A5 (https=
Inventor
浩二 大力
直人 楠本
卓也 鶴目
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2006153016A priority Critical patent/JP5352045B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7428—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used to support diced chips prior to mounting

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  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
JP2006153016A 2005-06-03 2006-06-01 集積回路装置の作製方法 Expired - Fee Related JP5352045B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006153016A JP5352045B2 (ja) 2005-06-03 2006-06-01 集積回路装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2005164605 2005-06-03
JP2005164605 2005-06-03
JP2006153016A JP5352045B2 (ja) 2005-06-03 2006-06-01 集積回路装置の作製方法

Publications (3)

Publication Number Publication Date
JP2007013131A JP2007013131A (ja) 2007-01-18
JP2007013131A5 JP2007013131A5 (https=) 2009-07-09
JP5352045B2 true JP5352045B2 (ja) 2013-11-27

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ID=37751159

Family Applications (1)

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JP2006153016A Expired - Fee Related JP5352045B2 (ja) 2005-06-03 2006-06-01 集積回路装置の作製方法

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JP (1) JP5352045B2 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MX2010002872A (es) 2007-09-14 2010-04-09 Toppan Printing Co Ltd Hoja de antena, transpondedor y cuaderno.
US8685837B2 (en) 2010-02-04 2014-04-01 Sharp Kabushiki Kaisha Transfer method, method for manufacturing semiconductor device, and semiconductor device
TWI506770B (zh) * 2010-07-02 2015-11-01 Himax Imagimg Inc 影像感測器與其製造方法
WO2012046428A1 (ja) * 2010-10-08 2012-04-12 シャープ株式会社 半導体装置の製造方法
JP6517678B2 (ja) * 2015-12-11 2019-05-22 株式会社Ｓｃｒｅｅｎホールディングス 電子デバイスの製造方法
JP6561966B2 (ja) * 2016-11-01 2019-08-21 トヨタ自動車株式会社 半導体装置の製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04349621A (ja) * 1991-05-27 1992-12-04 Canon Inc 半導体基材の作製方法
JP4531923B2 (ja) * 2000-04-25 2010-08-25 株式会社半導体エネルギー研究所 半導体装置
JP5121103B2 (ja) * 2000-09-14 2013-01-16 株式会社半導体エネルギー研究所 半導体装置、半導体装置の作製方法及び電気器具
TW574753B (en) * 2001-04-13 2004-02-01 Sony Corp Manufacturing method of thin film apparatus and semiconductor device
JP3979074B2 (ja) * 2001-12-11 2007-09-19 株式会社豊田自動織機 有機エレクトロルミネッセンス素子及びその製造方法
US20040140469A1 (en) * 2003-01-17 2004-07-22 Tsung-Neng Liao Panel of a flat display and method of fabricating the panel
JP2005045053A (ja) * 2003-07-23 2005-02-17 Elpida Memory Inc 半導体装置の製造方法

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JP2007013131A (ja) 2007-01-18

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