JP5352045B2 - 集積回路装置の作製方法 - Google Patents

集積回路装置の作製方法 Download PDF

Info

Publication number
JP5352045B2
JP5352045B2 JP2006153016A JP2006153016A JP5352045B2 JP 5352045 B2 JP5352045 B2 JP 5352045B2 JP 2006153016 A JP2006153016 A JP 2006153016A JP 2006153016 A JP2006153016 A JP 2006153016A JP 5352045 B2 JP5352045 B2 JP 5352045B2
Authority
JP
Japan
Prior art keywords
substrate
layer
dlc
film
adhesive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2006153016A
Other languages
English (en)
Japanese (ja)
Other versions
JP2007013131A (ja
JP2007013131A5 (enExample
Inventor
浩二 大力
直人 楠本
卓也 鶴目
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2006153016A priority Critical patent/JP5352045B2/ja
Publication of JP2007013131A publication Critical patent/JP2007013131A/ja
Publication of JP2007013131A5 publication Critical patent/JP2007013131A5/ja
Application granted granted Critical
Publication of JP5352045B2 publication Critical patent/JP5352045B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H10P72/7428—

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
JP2006153016A 2005-06-03 2006-06-01 集積回路装置の作製方法 Expired - Fee Related JP5352045B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006153016A JP5352045B2 (ja) 2005-06-03 2006-06-01 集積回路装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2005164605 2005-06-03
JP2005164605 2005-06-03
JP2006153016A JP5352045B2 (ja) 2005-06-03 2006-06-01 集積回路装置の作製方法

Publications (3)

Publication Number Publication Date
JP2007013131A JP2007013131A (ja) 2007-01-18
JP2007013131A5 JP2007013131A5 (enExample) 2009-07-09
JP5352045B2 true JP5352045B2 (ja) 2013-11-27

Family

ID=37751159

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006153016A Expired - Fee Related JP5352045B2 (ja) 2005-06-03 2006-06-01 集積回路装置の作製方法

Country Status (1)

Country Link
JP (1) JP5352045B2 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2192530B1 (en) * 2007-09-14 2013-03-27 Toppan Printing Co., Ltd. Antenna sheet, transponder and booklet
US8685837B2 (en) 2010-02-04 2014-04-01 Sharp Kabushiki Kaisha Transfer method, method for manufacturing semiconductor device, and semiconductor device
TWI506770B (zh) * 2010-07-02 2015-11-01 Himax Imagimg Inc 影像感測器與其製造方法
WO2012046428A1 (ja) * 2010-10-08 2012-04-12 シャープ株式会社 半導体装置の製造方法
JP6517678B2 (ja) * 2015-12-11 2019-05-22 株式会社Ｓｃｒｅｅｎホールディングス 電子デバイスの製造方法
JP6561966B2 (ja) * 2016-11-01 2019-08-21 トヨタ自動車株式会社 半導体装置の製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04349621A (ja) * 1991-05-27 1992-12-04 Canon Inc 半導体基材の作製方法
JP4531923B2 (ja) * 2000-04-25 2010-08-25 株式会社半導体エネルギー研究所 半導体装置
JP5121103B2 (ja) * 2000-09-14 2013-01-16 株式会社半導体エネルギー研究所 半導体装置、半導体装置の作製方法及び電気器具
TW574753B (en) * 2001-04-13 2004-02-01 Sony Corp Manufacturing method of thin film apparatus and semiconductor device
JP3979074B2 (ja) * 2001-12-11 2007-09-19 株式会社豊田自動織機 有機エレクトロルミネッセンス素子及びその製造方法
US20040140469A1 (en) * 2003-01-17 2004-07-22 Tsung-Neng Liao Panel of a flat display and method of fabricating the panel
JP2005045053A (ja) * 2003-07-23 2005-02-17 Elpida Memory Inc 半導体装置の製造方法

Also Published As

Publication number Publication date
JP2007013131A (ja) 2007-01-18

Similar Documents

Publication Publication Date Title
KR101272097B1 (ko) 집적회로 장치 및 그의 제조방법
US7728383B2 (en) Semiconductor device having a first base, a thin film transistor, and a second base
KR101219748B1 (ko) 박막 집적회로 제작방법
CN1808689B (zh) 半导体器件制作方法
CN1770474B (zh) 半导体器件及其制造方法
JP5376706B2 (ja) 半導体装置の作製方法
US9941115B2 (en) Method for manufacturing semiconductor device
JP5634487B2 (ja) 半導体装置の作製方法
KR101127888B1 (ko) 박막 집적회로의 제조방법 및 소자 기판
KR20060048470A (ko) 박막 집적회로 제작방법 및 소자 기판
WO2006033451A1 (en) Semiconductor device and method for manufacturing the same
JP2008294427A (ja) 半導体装置及びその駆動方法
CN100565836C (zh) 半导体器件的制造方法
JP4836465B2 (ja) 薄膜集積回路の作製方法及び薄膜集積回路用素子基板
JP5352045B2 (ja) 集積回路装置の作製方法
JP5089033B2 (ja) 半導体装置の作製方法
JP2009016811A (ja) 半導体装置及びその作製方法
JP5030388B2 (ja) 薄膜集積回路の作製方法
JP4942950B2 (ja) 半導体装置の作製方法
US7465596B2 (en) Manufacturing method of semiconductor device
JP5089037B2 (ja) 半導体装置の作製方法
JP2006049851A (ja) 薄膜集積回路の作製方法、及び素子基板
JP5094099B2 (ja) 半導体装置の作製方法
JP4908936B2 (ja) 半導体装置の作製方法
JP5201805B2 (ja) 半導体装置の作製方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090527

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20090527

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20120606

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20120612

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120725

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20130108

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130121

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20130529

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130607

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20130820

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20130826

R150 Certificate of patent or registration of utility model

Ref document number: 5352045

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees