JP5350139B2 - 露光装置、及びデバイスの製造方法 - Google Patents

露光装置、及びデバイスの製造方法 Download PDF

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Publication number
JP5350139B2
JP5350139B2 JP2009195393A JP2009195393A JP5350139B2 JP 5350139 B2 JP5350139 B2 JP 5350139B2 JP 2009195393 A JP2009195393 A JP 2009195393A JP 2009195393 A JP2009195393 A JP 2009195393A JP 5350139 B2 JP5350139 B2 JP 5350139B2
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Japan
Prior art keywords
exposure apparatus
base structure
surface plate
reference surface
relative position
Prior art date
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Expired - Fee Related
Application number
JP2009195393A
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English (en)
Japanese (ja)
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JP2010109330A5 (https=
JP2010109330A (ja
Inventor
広幸 和田
浩通 原
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Canon Inc
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Canon Inc
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Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2009195393A priority Critical patent/JP5350139B2/ja
Priority to US12/571,003 priority patent/US20100079736A1/en
Publication of JP2010109330A publication Critical patent/JP2010109330A/ja
Publication of JP2010109330A5 publication Critical patent/JP2010109330A5/ja
Application granted granted Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/50—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for positioning, orientation or alignment
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • G03F7/70833—Mounting of optical systems, e.g. mounting of illumination system, projection system or stage systems on base-plate or ground
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/709—Vibration, e.g. vibration detection, compensation, suppression or isolation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0606—Position monitoring, e.g. misposition detection or presence detection

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  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2009195393A 2008-10-01 2009-08-26 露光装置、及びデバイスの製造方法 Expired - Fee Related JP5350139B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009195393A JP5350139B2 (ja) 2008-10-01 2009-08-26 露光装置、及びデバイスの製造方法
US12/571,003 US20100079736A1 (en) 2008-10-01 2009-09-30 Exposure apparatus and device manufacturing method

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008256742 2008-10-01
JP2008256742 2008-10-01
JP2009195393A JP5350139B2 (ja) 2008-10-01 2009-08-26 露光装置、及びデバイスの製造方法

Publications (3)

Publication Number Publication Date
JP2010109330A JP2010109330A (ja) 2010-05-13
JP2010109330A5 JP2010109330A5 (https=) 2012-10-11
JP5350139B2 true JP5350139B2 (ja) 2013-11-27

Family

ID=42057107

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009195393A Expired - Fee Related JP5350139B2 (ja) 2008-10-01 2009-08-26 露光装置、及びデバイスの製造方法

Country Status (2)

Country Link
US (1) US20100079736A1 (https=)
JP (1) JP5350139B2 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL2007155A (en) 2010-08-25 2012-02-28 Asml Netherlands Bv Stage apparatus, lithographic apparatus and method of positioning an object table.
NL2009357A (en) * 2011-09-27 2013-03-28 Asml Netherlands Bv Lithographic apparatus and device manufacturing method.
CN104880911B (zh) * 2014-02-28 2018-01-30 上海微电子装备（集团）股份有限公司 一种光刻机工件台及其垂向位置初始化方法
DE102017204685B4 (de) 2017-03-21 2021-11-11 Carl Zeiss Smt Gmbh Verfahren zur Lokalisierung von Montagefehlern sowie Projektionsbelichtungsanlage
CN108038314A (zh) * 2017-12-15 2018-05-15 佛山市米良仓科技有限公司 一种工程变形监测信息处理系统

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4473292A (en) * 1982-02-09 1984-09-25 Censor Patent-Und Versuchsanstalt Dampening system
US4803712A (en) * 1987-01-20 1989-02-07 Hitachi, Ltd. X-ray exposure system
US5187519A (en) * 1990-10-05 1993-02-16 Canon Kabushiki Kaisha Exposure apparatus having mount means to suppress vibrations
JP3277581B2 (ja) * 1993-02-01 2002-04-22 株式会社ニコン ステージ装置および露光装置
JP3226704B2 (ja) * 1994-03-15 2001-11-05 キヤノン株式会社 露光装置
US6392741B1 (en) * 1995-09-05 2002-05-21 Nikon Corporation Projection exposure apparatus having active vibration isolator and method of controlling vibration by the active vibration isolator
US5812420A (en) * 1995-09-05 1998-09-22 Nikon Corporation Vibration-preventive apparatus and exposure apparatus
JP3337906B2 (ja) * 1996-04-02 2002-10-28 キヤノン株式会社 空圧式振動絶縁除去装置、投影露光装置及びこれを用いたデバイス製造方法
US5917580A (en) * 1996-08-29 1999-06-29 Canon Kabushiki Kaisha Scan exposure method and apparatus
US6128552A (en) * 1996-11-08 2000-10-03 Canon Kabushiki Kaisha Anti-vibration apparatus and method
JP3554186B2 (ja) * 1998-04-08 2004-08-18 キヤノン株式会社 露光装置、デバイス製造方法および反力受け方法
KR100574208B1 (ko) * 1998-06-02 2006-04-27 가부시키가이샤 니콘 주사형 노광장치 및 그의 제조방법, 및 디바이스 제조방법
EP1134793A4 (en) * 1998-06-17 2006-07-26 Nikon Corp EXPOSURE METHOD AND DEVICE
KR20020054368A (ko) * 1999-12-16 2002-07-06 시마무라 테루오 노광방법 및 장치
US6621556B2 (en) * 2000-02-28 2003-09-16 Nikon Corporation Projection exposure apparatus and manufacturing and adjusting methods thereof
US6538720B2 (en) * 2001-02-28 2003-03-25 Silicon Valley Group, Inc. Lithographic tool with dual isolation system and method for configuring the same
JP2002359177A (ja) * 2001-05-31 2002-12-13 Canon Inc 露光装置
US6987559B2 (en) * 2002-10-15 2006-01-17 Nikon Corporation Vibration-attenuation devices having low lateral stiffness, and exposure apparatus comprising same
JP4458322B2 (ja) * 2003-01-14 2010-04-28 キヤノン株式会社 露光装置およびデバイス製造方法
JP2004335510A (ja) * 2003-04-30 2004-11-25 Nikon Corp ステージ装置及び露光装置
JP2005058254A (ja) * 2003-08-11 2005-03-10 Ace Denken:Kk 遊技機
WO2006038952A2 (en) * 2004-09-30 2006-04-13 Nikon Corporation Projection optical device and exposure apparatus
JP2006344685A (ja) * 2005-06-07 2006-12-21 Canon Inc 露光装置

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US20100079736A1 (en) 2010-04-01
JP2010109330A (ja) 2010-05-13

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