JP5345272B2 - 高効率の安定したオキシニトリド発光物質、該発光物質を備えた光源および該発光物質の製造法 - Google Patents
高効率の安定したオキシニトリド発光物質、該発光物質を備えた光源および該発光物質の製造法 Download PDFInfo
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- JP5345272B2 JP5345272B2 JP2005307740A JP2005307740A JP5345272B2 JP 5345272 B2 JP5345272 B2 JP 5345272B2 JP 2005307740 A JP2005307740 A JP 2005307740A JP 2005307740 A JP2005307740 A JP 2005307740A JP 5345272 B2 JP5345272 B2 JP 5345272B2
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/0883—Arsenides; Nitrides; Phosphides
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
- C09K11/77347—Silicon Nitrides or Silicon Oxynitrides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/54—Screens on or from which an image or pattern is formed, picked-up, converted, or stored; Luminescent coatings on vessels
- H01J1/62—Luminescent screens; Selection of materials for luminescent coatings on vessels
- H01J1/63—Luminescent screens; Selection of materials for luminescent coatings on vessels characterised by the luminescent material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
Description
a)出発物質SiO2、Si3N4、SrCO3、CaCO3ならびにEu前駆物質、殊にEu2O3を本質的に化学量論的割合で準備する工程;
b)前記出発物質をWるつぼまたはMoるつぼ中でフラックスを使用しながら混合する工程;
c)この混合物を約1300〜1700℃で灼熱する工程を有することによって解決される。
a)出発物質SiO2、Si3N4、SrCO3、CaCO3ならびにEu前駆物質、殊にEu2O3を本質的に化学量論的割合で準備する工程;
b)前記出発物質をWるつぼまたはMoるつぼ中でフラックスを使用しながら混合する工程;
c)この混合物を約1300〜1700℃、有利に1450〜1650℃で灼熱する工程を有することを示す。
Claims (15)
- 放射線を140〜480nmの波長範囲内の光学スペクトル領域の短波長の範囲内で放出する1次放射線源を備え、この放射線が少なくとも1つの第1の発光物質により、全部かまたは部分的に可視光線のスペクトル領域内の長波長の2次放射線に変換される光源であって、該発光物質はカチオンMを有しかつ実験式MSi2O2N2〔式中、Mは、成分として同時にSrおよびCaならびに他の活性剤Dを含み、この場合Dは、少なくとも2価のユウロピウムで占められている〕を有するオキシニトリドシリケートの種類からなる高効率の安定したオキシニトリド発光物質であって、その際、M=Sr1−x−yCayEuxであり、但し、この場合x+yは、0.45以上で0.725以下であり、かつyは、0.4以上で0.675以下であり、Ca/Euの比は、1を上廻るものとし、Euの含量がMの5〜20モル%を成し、該オキシニトリドシリケートは、555〜568nmの範囲内の主波長を有する放出を示す前記光源。
- 1次放射線源としてInGaNまたはInGaAlPをベースとする発光ダイオードまたは低圧または高圧をベースとする放電灯、またはエレクトロルミネセントランプを使用する、請求項1記載の光源。
- 1次放射線の一部分がさらに第2の発光物質により長波長の放射線に変換されている、請求項1記載の光源。
- 1次放射線の一部分がさらに第3の発光物質により長波長の放射線に変換され、この場合この第3の発光物質は、赤色のスペクトル範囲内で放出する、請求項3記載の光源。
- 放電灯がインジウム含有充填物を有する、請求項2記載の光源。
- 白色光を発生させるために、第1の発光物質と第2の発光物質が適当に選択され、混合されている、請求項3記載の光源。
- Euの含量がMの5〜12モル%を成す、請求項1記載の光源。
- yが0.475以上である、請求項1記載の光源。
- Ca/Srの比が0.90<Ca/Sr<2.30の範囲内にある、請求項1記載の光源。
- Ca/Srの比が0.95以上1.20以下の範囲内にある、請求項9記載の光源。
- 請求項1に記載の高効率の安定したオキシニトリド発光物質の製造法において、次の製造工程:
a)出発物質SiO2、Si3N4、SrCO3、CaCO3ならびにEu前駆物質を本質的に化学量論的割合で準備する工程;
b)前記出発物質をWるつぼまたはMoるつぼ中でフラックスを使用しながら混合する工程;
c)この混合物を1300〜1700℃で灼熱する工程を有し、
全成分の化学量論的堆積物を少なくとも20%に正確に維持することを特徴とする、高効率の発光物質の製造法。 - フラックスが、HBO3、CaF2、SrF2およびEuF3からなる群から選択される、請求項11記載の方法。
- 0〜20%のH2体積含量を有するN2/H2混合物での堆積物を灼熱する、請求項11記載の方法。
- 灼熱する処理は、1500〜1600℃で行われる、請求項11記載の方法。
- Eu前駆物質はEu2O3である、請求項11記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102004051395A DE102004051395A1 (de) | 2004-10-21 | 2004-10-21 | Hocheffizienter stabiler Oxinitrid-Leuchtstoff |
DE102004051395.3 | 2004-10-21 |
Publications (2)
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JP2006117943A JP2006117943A (ja) | 2006-05-11 |
JP5345272B2 true JP5345272B2 (ja) | 2013-11-20 |
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JP2005307740A Expired - Fee Related JP5345272B2 (ja) | 2004-10-21 | 2005-10-21 | 高効率の安定したオキシニトリド発光物質、該発光物質を備えた光源および該発光物質の製造法 |
Country Status (3)
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US (1) | US7649309B2 (ja) |
JP (1) | JP5345272B2 (ja) |
DE (1) | DE102004051395A1 (ja) |
Families Citing this family (16)
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DE102006008300A1 (de) * | 2006-02-22 | 2007-08-30 | Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH | Leuchtstoff und Lichtquelle mit derartigem Leuchtstoff sowie Herstellverfahren für den Leuchtstoff |
US8282986B2 (en) * | 2006-05-18 | 2012-10-09 | Osram Sylvania, Inc. | Method of applying phosphor coatings |
JP5590092B2 (ja) * | 2006-09-15 | 2014-09-17 | 三菱化学株式会社 | 蛍光体、蛍光体含有組成物、発光装置、並びに画像表示装置及び照明装置 |
CN101157854B (zh) * | 2007-07-02 | 2010-10-13 | 北京宇极科技发展有限公司 | 一种氮氧化合物发光材料、其制备方法及其应用 |
US20100224896A1 (en) * | 2007-09-04 | 2010-09-09 | Koninklijke Philips Electronics N.V. | Light emitting device comprising a composite sialon-based ceramic material |
CN101946336B (zh) * | 2008-02-18 | 2012-06-27 | 株式会社小糸制作所 | 白色发光装置以及使用该白色发光装置的车辆用灯具 |
WO2010041195A1 (en) * | 2008-10-09 | 2010-04-15 | Philips Intellectual Property & Standards Gmbh | Blue emitting sion phosphor |
DE102008058295A1 (de) * | 2008-11-20 | 2010-05-27 | Osram Gesellschaft mit beschränkter Haftung | Rot emittierender Leuchtstoff aus der Klasse der Nitridosilikate und Lichtquelle mit derartigem Leuchtstoff sowie Verfahren zur Herstellung des Leuchtstoffs |
CN101760190B (zh) * | 2009-10-30 | 2013-07-03 | 彩虹集团公司 | 一种合成稀土掺杂氮氧化物荧光粉及其制备方法 |
TW201202391A (en) * | 2010-07-14 | 2012-01-16 | Forward Electronics Co Ltd | Phosphor composition for AC LED and AC LED manufactured by using the same |
CN102796517B (zh) * | 2011-05-23 | 2015-02-04 | 海洋王照明科技股份有限公司 | 一种含氮硅酸镁薄膜及其制备方法和应用 |
CN102337131A (zh) * | 2011-07-19 | 2012-02-01 | 彩虹集团公司 | 一种稀土掺杂的氮氧化物荧光粉材料及其制备方法 |
CN102533260A (zh) * | 2011-12-29 | 2012-07-04 | 彩虹集团公司 | 一种led用氮氧化物黄绿色荧光粉及其制备方法 |
KR101970774B1 (ko) * | 2012-07-17 | 2019-04-19 | 엘지이노텍 주식회사 | 형광체 및 발광 장치 |
KR101990919B1 (ko) * | 2012-10-09 | 2019-06-19 | 엘지이노텍 주식회사 | 형광체 및 발광 장치 |
CN104293351B (zh) * | 2014-09-29 | 2016-04-27 | 中国计量学院 | 一种蓝绿荧光粉及其制备方法 |
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US4810938A (en) * | 1987-10-01 | 1989-03-07 | General Electric Company | High efficacy electrodeless high intensity discharge lamp |
CA2066604A1 (en) | 1990-07-18 | 1992-01-19 | Koichi Hayashi | Variable color lamp |
US7662791B2 (en) | 2000-08-02 | 2010-02-16 | University Of Southern California | Gene silencing using mRNA-cDNA hybrids |
EP1413618A1 (en) * | 2002-09-24 | 2004-04-28 | Osram Opto Semiconductors GmbH | Luminescent material, especially for LED application |
US6717353B1 (en) | 2002-10-14 | 2004-04-06 | Lumileds Lighting U.S., Llc | Phosphor converted light emitting device |
ATE329479T1 (de) | 2002-10-14 | 2006-06-15 | Koninkl Philips Electronics Nv | Lichtemittierendes bauelement mit einem eu(ii)- aktivierten leuchtstoff |
JP4415548B2 (ja) * | 2002-10-16 | 2010-02-17 | 日亜化学工業株式会社 | オキシ窒化物蛍光体を用いた発光装置 |
MY149573A (en) | 2002-10-16 | 2013-09-13 | Nichia Corp | Oxynitride phosphor and production process thereof, and light-emitting device using oxynitride phosphor |
TW200523340A (en) | 2003-09-24 | 2005-07-16 | Patent Treuhand Ges Fur Elek Sche Gluhlampen Mbh | Hochefeizienter leuchtstoff |
JP4805828B2 (ja) * | 2003-09-24 | 2011-11-02 | パテント−トロイハント−ゲゼルシヤフト フユール エレクトリツシエ グリユーラムペン ミツト ベシユレンクテル ハフツング | 緑色発光led |
US7965031B2 (en) * | 2003-09-24 | 2011-06-21 | Osram Gesellschaft mit beschränkter Haftung | White-emitting LED having a defined color temperature |
JP2005298721A (ja) * | 2004-04-14 | 2005-10-27 | Nichia Chem Ind Ltd | 酸窒化物蛍光体及びそれを用いた発光装置 |
-
2004
- 2004-10-21 DE DE102004051395A patent/DE102004051395A1/de not_active Withdrawn
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2005
- 2005-10-21 US US11/256,567 patent/US7649309B2/en active Active
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US20060103297A1 (en) | 2006-05-18 |
US7649309B2 (en) | 2010-01-19 |
JP2006117943A (ja) | 2006-05-11 |
DE102004051395A1 (de) | 2006-04-27 |
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