JP5344832B2 - ガス流拡散器 - Google Patents
ガス流拡散器 Download PDFInfo
- Publication number
- JP5344832B2 JP5344832B2 JP2008070742A JP2008070742A JP5344832B2 JP 5344832 B2 JP5344832 B2 JP 5344832B2 JP 2008070742 A JP2008070742 A JP 2008070742A JP 2008070742 A JP2008070742 A JP 2008070742A JP 5344832 B2 JP5344832 B2 JP 5344832B2
- Authority
- JP
- Japan
- Prior art keywords
- gas
- ring
- gas distribution
- processing chamber
- substrate support
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000009826 distribution Methods 0.000 claims description 63
- 239000000758 substrate Substances 0.000 claims description 56
- 238000000034 method Methods 0.000 claims description 38
- 238000002347 injection Methods 0.000 claims description 28
- 239000007924 injection Substances 0.000 claims description 28
- 230000008569 process Effects 0.000 claims description 28
- 238000005530 etching Methods 0.000 claims description 6
- 230000008859 change Effects 0.000 claims description 2
- 238000004380 ashing Methods 0.000 claims 1
- 238000000151 deposition Methods 0.000 claims 1
- 230000008021 deposition Effects 0.000 claims 1
- 238000002513 implantation Methods 0.000 claims 1
- 238000009832 plasma treatment Methods 0.000 claims 1
- 238000004381 surface treatment Methods 0.000 claims 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 15
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000001020 plasma etching Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000005520 cutting process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45502—Flow conditions in reaction chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T137/00—Fluid handling
- Y10T137/8593—Systems
- Y10T137/85938—Non-valved flow dividers
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Power Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Analytical Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
Description
本発明の実施形態は、半導体基板処理システムに関する。特に、本発明の実施形態は、半導体基板処理チャンバ内でガス流を制御するためのガス流拡散器に関する。
集積回路は複雑なデバイスに発展しており、シングルチップ上に無数の部品(例えば、トランジスター、コンデンサー、抵抗器等)を含むことができる。チップ設計の進化により、より速い回路とより高い回路密度が必要とされている。より高い回路密度に対する要求は、集積回路部品寸法の縮小を必要とする。このデバイスのフィーチャーの最小寸法は、通常、技術的には限界寸法と呼ばれる。限界寸法としては、通常、線、列、開口、線間の空間等のようなフィーチャーの最小幅が挙げられる。
本体408はポート406を三方穴432に連結する通路430を含む。三方穴432は座ぐり穴を有し、ガス分配機162の開口端440に対応する。ガス分配機162の開口端440は、適切な方法で、例えば、接着剤、ろう付け、溶接、圧入、スエージングによるか、又は適切な気密嵌めにより、本体408に密封する。第2の座ぐり穴は、ガスがガス分配機162の開口端440のポート406を通して連結器400に流れ、閉鎖端442に流れるようにガス分配機162の閉鎖端442に対応する。図5を参照して後述するように、複数の非対称分布のポートを通して、ガスは、ガス分配機162から排気される。
Claims (14)
- 真空処理チャンバであって、
内容積部を有するチャンバ本体と、
前記内容積部に配置された基板支持部と、
前記基板支持部の基板支持表面の平面下に配置されたポンプポートであって、前記ポンプポートの位置と前記内容積部の形状が、前記基板支持部の前記基板支持表面上に配置された基板に、非対称の処理結果を生ずる構成を有する、ポンプポートと、
前記基板支持部の前記基板支持表面の前記平面上に配置されたガス分配アセンブリであって、前記ガス分配アセンブリは、ガス分配板と、非対称分布のガス注入ポートを有する少なくとも1つのガス注入リングとを含み、これによって前記ガス注入リングと前記ガス分配板との間に非対称分布のガスを作るように操作でき、前記ガス注入リングの構成を選んで、前記ポンプポート位置と前記内容積部の形状に起因する処理結果に対する対称性を整える、ガス分配アセンブリとを含む真空処理チャンバ。 - 前記ガス分配アセンブリの構成を選んで、前記ポンプポートの位置と前記内容積部の形状に起因する処理結果を、対称にする請求項1記載の真空処理チャンバ。
- 前記チャンバ本体外側に位置する少なくとも1つのコイルを含み、電圧を加えて前記処理結果の分布を横方向に整える請求項1記載の真空処理チャンバ。
- 前記ガス分配アセンブリが、
前記処理結果の横方向分布を変えるように、独立して制御可能な内側及び外側ガス注入ポートを含む請求項1記載の真空処理チャンバ。 - 前記ガス分配アセンブリが、
前記基板支持部と前記内側及び外側ガス注入ポートの間に配置されたガス分配板を含む請求項4記載の真空処理チャンバ。 - 真空処理チャンバであって、
内容積部を有するチャンバ本体と、
前記内容積部に配置された基板支持部と、
非同心の、又は異なる形状を有する少なくとも2つのガス注入リングであって、少なくとも1つのガス注入リングは、非対称分布のガス注入ポートを有するガス注入リングと、
前記基板支持部と前記ガス注入リングの間に配置されたガス分配板とを含む真空処理チャンバ。 - 前記ガス注入ポートの分布を選んで、非対称な処理結果を生じる請求項6記載の真空処理チャンバ。
- 真空処理チャンバであって、
内容積部を規定する側壁と蓋を有するチャンバ本体と、
前記内容積部内に配置された基板支持部と、
ガス分配アセンブリとを含み、前記ガス分配アセンブリが、
前記蓋と連結したガス分配板と、
前記ガス分配板と前記蓋の間に配置された少なくとも1つのリングを含み、前記リングが、非対称分布のガス注入ポートを有し、これによって前記リングと前記ガス分配板との間に非対称分布のガスを作るように操作できる真空処理チャンバ。 - 前記リングのポートが、前記ガス分配板を通して形成されたガス流開口部の方向とは異なる方向を含む請求項8記載の真空処理チャンバ。
- 前記ガス分配アセンブリが、内側リングと外側リングを含み、前記リングがそれぞれ、ガス注入ポートを有し、前記リングのポートが、前記ガス分配板を通して形成された開口部に実質的に垂直である請求項8記載の真空処理チャンバ。
- 基板を真空処理する方法であって、
基板を処理チャンバ内の基板支持部上に配置し、
処理ガスを前記処理チャンバ内に配置されたガス分配板と基板上方の蓋との間に規定した空間に流し、
前記ガス分配板の上方の空間内に配置されたリングから内側横方向及び外側横方向へ前記処理ガスを流し、これによって基板に処理ガスの非対称分布を作り、
処理ガスを存在させて前記基板を処理することを含む方法。 - 処理が、プラズマ処理、表面処理、注入、アッシング、エッチング又は堆積の内の少なくとも1つを含む請求項11記載の方法。
- 処理ガスを前記空間に横方向に流すことが、
内側リングから径方向にガスを流すことと、
外側リングから径方向にガスを流すことを含む請求項11記載の方法。 - ガス分配アセンブリであって、
ガス分配板であって、前記板を通して形成された複数の開口部を有し、前記開口部が、前記板の中心線に実質的に平行な方向を有するガス分配板と、
前記ガス分配板に連結した少なくとも1つのリングであって、前記板の開口部の方向と異なる方向を有する複数のガス注入ポートを有し、前記少なくとも1つのリングの前記ガス注入ポートが非対称分布を有し、これによって前記リングと前記ガス分配板との間に非対称分布のガスを作るように操作できるリングとを含むガス分配アセンブリ。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/689,031 | 2007-03-21 | ||
US11/689,031 US8123902B2 (en) | 2007-03-21 | 2007-03-21 | Gas flow diffuser |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008277773A JP2008277773A (ja) | 2008-11-13 |
JP5344832B2 true JP5344832B2 (ja) | 2013-11-20 |
Family
ID=39577580
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008070742A Expired - Fee Related JP5344832B2 (ja) | 2007-03-21 | 2008-03-19 | ガス流拡散器 |
Country Status (7)
Country | Link |
---|---|
US (1) | US8123902B2 (ja) |
EP (1) | EP1973146A2 (ja) |
JP (1) | JP5344832B2 (ja) |
KR (1) | KR100978690B1 (ja) |
CN (1) | CN101308771B (ja) |
SG (1) | SG146566A1 (ja) |
TW (1) | TWI401367B (ja) |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8216374B2 (en) * | 2005-12-22 | 2012-07-10 | Applied Materials, Inc. | Gas coupler for substrate processing chamber |
US9157152B2 (en) * | 2007-03-29 | 2015-10-13 | Tokyo Electron Limited | Vapor deposition system |
TW201112886A (en) * | 2009-01-09 | 2011-04-01 | Ulvac Inc | Plasma treatment apparatus |
DE112010000724T8 (de) * | 2009-01-09 | 2013-04-18 | Ulvac, Inc. | Plasmaverarbeitungsvorrichtung und Plasma-CVD-Filmbildungsverfahren |
US8382939B2 (en) * | 2009-07-13 | 2013-02-26 | Applied Materials, Inc. | Plasma processing chamber with enhanced gas delivery |
KR101245769B1 (ko) * | 2009-07-28 | 2013-03-20 | 엘아이지에이디피 주식회사 | 화학기상증착장치, 화학기상증착장치용 가이드부재 및 화학기상증착장치를 이용한 박막제조방법 |
TWI394986B (zh) * | 2009-11-09 | 2013-05-01 | Global Material Science Co Ltd | 擴散板結構及其製作方法 |
US9184028B2 (en) * | 2010-08-04 | 2015-11-10 | Lam Research Corporation | Dual plasma volume processing apparatus for neutral/ion flux control |
US8869742B2 (en) | 2010-08-04 | 2014-10-28 | Lam Research Corporation | Plasma processing chamber with dual axial gas injection and exhaust |
CN103348446B (zh) | 2011-02-09 | 2016-08-24 | 应用材料公司 | 用于rf pvd腔室且能均匀调整的esc接地套件 |
TWI560801B (en) * | 2011-09-30 | 2016-12-01 | Applied Materials Inc | Electrostatic chuck with temperature control |
US10586686B2 (en) | 2011-11-22 | 2020-03-10 | Law Research Corporation | Peripheral RF feed and symmetric RF return for symmetric RF delivery |
JP5929429B2 (ja) * | 2012-03-30 | 2016-06-08 | 東京エレクトロン株式会社 | 成膜装置 |
US10232324B2 (en) * | 2012-07-12 | 2019-03-19 | Applied Materials, Inc. | Gas mixing apparatus |
TW201437423A (zh) * | 2013-02-21 | 2014-10-01 | Applied Materials Inc | 用於注射器至基板的空隙控制之裝置及方法 |
JP6503730B2 (ja) * | 2014-12-22 | 2019-04-24 | 東京エレクトロン株式会社 | 成膜装置 |
CN105789008B (zh) * | 2014-12-22 | 2017-12-19 | 中微半导体设备(上海)有限公司 | 等离子体处理装置及等离子体刻蚀方法 |
US10167552B2 (en) * | 2015-02-05 | 2019-01-01 | Lam Research Ag | Spin chuck with rotating gas showerhead |
US10049862B2 (en) * | 2015-04-17 | 2018-08-14 | Lam Research Corporation | Chamber with vertical support stem for symmetric conductance and RF delivery |
JP2016156094A (ja) * | 2016-04-28 | 2016-09-01 | 東京エレクトロン株式会社 | 成膜装置 |
JP6308318B2 (ja) * | 2017-04-06 | 2018-04-11 | 東京エレクトロン株式会社 | 成膜装置 |
WO2020131214A1 (en) | 2018-12-20 | 2020-06-25 | Applied Materials, Inc. | Method and apparatus for supplying improved gas flow to a processing volume of a processing chamber |
CN109817554B (zh) * | 2019-01-31 | 2020-12-25 | 武汉华星光电半导体显示技术有限公司 | 一种气体扩散器 |
WO2020121588A1 (ja) * | 2019-07-29 | 2020-06-18 | 株式会社日立ハイテク | プラズマ処理装置 |
DE102020123076A1 (de) * | 2020-09-03 | 2022-03-03 | Aixtron Se | Gaseinlassorgan eines CVD-Reaktors mit zwei Einspeisestellen |
Family Cites Families (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5556501A (en) | 1989-10-03 | 1996-09-17 | Applied Materials, Inc. | Silicon scavenger in an inductively coupled RF plasma reactor |
JP3165941B2 (ja) * | 1993-10-04 | 2001-05-14 | 東京エレクトロン株式会社 | プラズマ処理装置及びその方法 |
JPH07283203A (ja) * | 1994-04-13 | 1995-10-27 | Toshiba Corp | 表面処理装置 |
US6054013A (en) | 1996-02-02 | 2000-04-25 | Applied Materials, Inc. | Parallel plate electrode plasma reactor having an inductive antenna and adjustable radial distribution of plasma ion density |
US6035101A (en) | 1997-02-12 | 2000-03-07 | Applied Materials, Inc. | High temperature multi-layered alloy heater assembly and related methods |
JPH113799A (ja) * | 1997-06-11 | 1999-01-06 | Hitachi Ltd | プラズマ処理装置 |
JPH11323563A (ja) * | 1998-05-12 | 1999-11-26 | Canon Inc | プラズマcvd法による堆積膜形成装置及び形成方法 |
TW384502B (en) * | 1998-08-27 | 2000-03-11 | Winbond Electronics Corp | Gas dispensing apparatus |
US6499425B1 (en) * | 1999-01-22 | 2002-12-31 | Micron Technology, Inc. | Quasi-remote plasma processing method and apparatus |
US20020134507A1 (en) * | 1999-12-22 | 2002-09-26 | Silicon Valley Group, Thermal Systems Llc | Gas delivery metering tube |
US6894245B2 (en) * | 2000-03-17 | 2005-05-17 | Applied Materials, Inc. | Merie plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression |
US8617351B2 (en) * | 2002-07-09 | 2013-12-31 | Applied Materials, Inc. | Plasma reactor with minimal D.C. coils for cusp, solenoid and mirror fields for plasma uniformity and device damage reduction |
US6450117B1 (en) * | 2000-08-07 | 2002-09-17 | Applied Materials, Inc. | Directing a flow of gas in a substrate processing chamber |
JP4753460B2 (ja) | 2000-08-16 | 2011-08-24 | 株式会社クリエイティブ テクノロジー | 静電チャック及びその製造方法 |
KR20040046571A (ko) * | 2002-11-27 | 2004-06-05 | 주식회사 피앤아이 | 이온빔을 이용한 재료의 표면 처리 장치 |
KR100541447B1 (ko) * | 2003-07-23 | 2006-01-11 | 삼성전자주식회사 | 웨이퍼용 정전척 |
US8083853B2 (en) | 2004-05-12 | 2011-12-27 | Applied Materials, Inc. | Plasma uniformity control by gas diffuser hole design |
US7250373B2 (en) | 2004-08-27 | 2007-07-31 | Applied Materials, Inc. | Method and apparatus for etching material layers with high uniformity of a lateral etch rate across a substrate |
US7648914B2 (en) | 2004-10-07 | 2010-01-19 | Applied Materials, Inc. | Method for etching having a controlled distribution of process results |
US7436645B2 (en) | 2004-10-07 | 2008-10-14 | Applied Materials, Inc. | Method and apparatus for controlling temperature of a substrate |
US7544251B2 (en) | 2004-10-07 | 2009-06-09 | Applied Materials, Inc. | Method and apparatus for controlling temperature of a substrate |
US20060162661A1 (en) * | 2005-01-22 | 2006-07-27 | Applied Materials, Inc. | Mixing energized and non-energized gases for silicon nitride deposition |
KR100854995B1 (ko) * | 2005-03-02 | 2008-08-28 | 삼성전자주식회사 | 고밀도 플라즈마 화학 기상 증착 장치 |
US7416635B2 (en) | 2005-03-02 | 2008-08-26 | Tokyo Electron Limited | Gas supply member and plasma processing apparatus |
US20060228490A1 (en) * | 2005-04-07 | 2006-10-12 | Applied Materials, Inc. | Gas distribution uniformity improvement by baffle plate with multi-size holes for large size PECVD systems |
KR200419389Y1 (ko) * | 2005-04-07 | 2006-06-19 | 어플라이드 머티어리얼스, 인코포레이티드 | 다양한 크기의 홀을 갖는 대형 pecvd 시스템용배플판에 의한 가스 분배 균일성 개선 |
JP2006303309A (ja) * | 2005-04-22 | 2006-11-02 | Hitachi High-Technologies Corp | プラズマ処理装置 |
JP4506557B2 (ja) * | 2005-05-18 | 2010-07-21 | 株式会社島津製作所 | シャワーヘッドおよび表面波励起プラズマ処理装置 |
JP2007067242A (ja) * | 2005-08-31 | 2007-03-15 | Toshiba Ceramics Co Ltd | ガス分散プレート及びその製造方法 |
CN100416757C (zh) * | 2005-12-07 | 2008-09-03 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 等离子体刻蚀装置排气环 |
-
2007
- 2007-03-21 US US11/689,031 patent/US8123902B2/en not_active Expired - Fee Related
-
2008
- 2008-03-14 SG SG200802091-9A patent/SG146566A1/en unknown
- 2008-03-18 TW TW97109521A patent/TWI401367B/zh not_active IP Right Cessation
- 2008-03-19 KR KR1020080025360A patent/KR100978690B1/ko not_active IP Right Cessation
- 2008-03-19 JP JP2008070742A patent/JP5344832B2/ja not_active Expired - Fee Related
- 2008-03-20 EP EP20080153088 patent/EP1973146A2/en active Pending
- 2008-03-21 CN CN2008100845182A patent/CN101308771B/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
TW200844341A (en) | 2008-11-16 |
US8123902B2 (en) | 2012-02-28 |
KR20080086361A (ko) | 2008-09-25 |
EP1973146A2 (en) | 2008-09-24 |
CN101308771B (zh) | 2010-06-23 |
KR100978690B1 (ko) | 2010-08-30 |
SG146566A1 (en) | 2008-10-30 |
CN101308771A (zh) | 2008-11-19 |
TWI401367B (zh) | 2013-07-11 |
US20080230518A1 (en) | 2008-09-25 |
JP2008277773A (ja) | 2008-11-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5344832B2 (ja) | ガス流拡散器 | |
US8236105B2 (en) | Apparatus for controlling gas flow in a semiconductor substrate processing chamber | |
US11276562B2 (en) | Plasma processing using multiple radio frequency power feeds for improved uniformity | |
US20050093460A1 (en) | Helical resonator type plasma processing apparatus | |
US8382939B2 (en) | Plasma processing chamber with enhanced gas delivery | |
US7432467B2 (en) | Plasma processing apparatus | |
US20080023143A1 (en) | Capacitively coupled plasma reactor with magnetic plasma control | |
US20030218427A1 (en) | Capacitively coupled plasma reactor with magnetic plasma control | |
JP2017532788A (ja) | 調整可能ガスフロー制御のためのガス分離器を含むガス供給配送配置 | |
KR20090024523A (ko) | 샤워헤드 및 이를 포함하는 기판처리장치, 샤워헤드를이용하여 플라스마를 공급하는 방법 | |
JP2010538488A (ja) | 基板処理装置 | |
US10780447B2 (en) | Apparatus for controlling temperature uniformity of a showerhead | |
TWI829156B (zh) | 電漿源陣列、電漿處理設備、電漿處理系統以及用於在電漿處理設備中加工工件的方法 | |
TW202139786A (zh) | 用於在電漿處理裝置中的一邊緣環處操控功率的設備及方法 | |
CN112437969A (zh) | 等离子体处理设备中具有成角度的喷嘴的气体供给装置 | |
JP2000031121A (ja) | プラズマ放出装置及びプラズマ処理装置 | |
KR20130120689A (ko) | 플라즈마 처리 장치 | |
JP2017224697A (ja) | ガス輸送管及びプラズマ処理装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20110316 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110324 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20120530 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120605 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20120903 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20120906 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20121004 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20121010 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20121102 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20121107 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20121205 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130108 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130321 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130416 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130624 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20130716 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20130813 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
LAPS | Cancellation because of no payment of annual fees |