JP5337011B2 - 磁気光学素子用酸化テルビウム結晶 - Google Patents
磁気光学素子用酸化テルビウム結晶 Download PDFInfo
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- JP5337011B2 JP5337011B2 JP2009282699A JP2009282699A JP5337011B2 JP 5337011 B2 JP5337011 B2 JP 5337011B2 JP 2009282699 A JP2009282699 A JP 2009282699A JP 2009282699 A JP2009282699 A JP 2009282699A JP 5337011 B2 JP5337011 B2 JP 5337011B2
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- crystal
- magneto
- terbium
- melt
- terbium oxide
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- 239000013078 crystal Substances 0.000 title claims description 103
- 229910003451 terbium oxide Inorganic materials 0.000 title claims description 16
- SCRZPWWVSXWCMC-UHFFFAOYSA-N terbium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[Tb+3].[Tb+3] SCRZPWWVSXWCMC-UHFFFAOYSA-N 0.000 title claims description 16
- 238000000034 method Methods 0.000 claims description 27
- 239000002994 raw material Substances 0.000 claims description 24
- 238000004519 manufacturing process Methods 0.000 claims description 15
- 239000000155 melt Substances 0.000 claims description 15
- 230000007704 transition Effects 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 8
- 210000003625 skull Anatomy 0.000 claims description 8
- 238000002834 transmittance Methods 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 229910000510 noble metal Inorganic materials 0.000 claims description 6
- 238000001816 cooling Methods 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 5
- 229910052735 hafnium Inorganic materials 0.000 claims description 4
- 229910052749 magnesium Inorganic materials 0.000 claims description 4
- 229910052726 zirconium Inorganic materials 0.000 claims description 4
- 229910000691 Re alloy Inorganic materials 0.000 claims description 2
- 229910052702 rhenium Inorganic materials 0.000 claims description 2
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 claims description 2
- DECCZIUVGMLHKQ-UHFFFAOYSA-N rhenium tungsten Chemical compound [W].[Re] DECCZIUVGMLHKQ-UHFFFAOYSA-N 0.000 claims description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 239000010937 tungsten Substances 0.000 claims description 2
- 238000002425 crystallisation Methods 0.000 claims 1
- 230000008025 crystallization Effects 0.000 claims 1
- 229910052771 Terbium Inorganic materials 0.000 description 25
- -1 terbium ions Chemical class 0.000 description 13
- 150000002910 rare earth metals Chemical group 0.000 description 12
- 238000002844 melting Methods 0.000 description 10
- 230000008018 melting Effects 0.000 description 10
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 10
- 238000010438 heat treatment Methods 0.000 description 9
- 238000010521 absorption reaction Methods 0.000 description 8
- 230000003287 optical effect Effects 0.000 description 7
- 239000000843 powder Substances 0.000 description 7
- 230000008033 biological extinction Effects 0.000 description 6
- 230000006698 induction Effects 0.000 description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- 238000002109 crystal growth method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 239000002223 garnet Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910052691 Erbium Inorganic materials 0.000 description 2
- 229910052765 Lutetium Inorganic materials 0.000 description 2
- 229910052775 Thulium Inorganic materials 0.000 description 2
- 229910052769 Ytterbium Inorganic materials 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000000498 cooling water Substances 0.000 description 2
- 235000019441 ethanol Nutrition 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 229910052741 iridium Inorganic materials 0.000 description 2
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052706 scandium Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000000411 transmission spectrum Methods 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 1
- 150000001217 Terbium Chemical class 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- FNCIDSNKNZQJTJ-UHFFFAOYSA-N alumane;terbium Chemical compound [AlH3].[Tb] FNCIDSNKNZQJTJ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000004040 coloring Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000008710 crystal-8 Substances 0.000 description 1
- 239000010987 cubic zirconia Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000011812 mixed powder Substances 0.000 description 1
- 239000004570 mortar (masonry) Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000000634 powder X-ray diffraction Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000010583 slow cooling Methods 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000004781 supercooling Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
Landscapes
- Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
Θ=VHL
で表される。比例係数のVはヴェルデ定数といい、材料に依存する特性値である。Vの大きな材料をファラデー回転子に用いると、ファラデー回転子と永久磁石が小さくても同等のアイソレーション性能を得ることができるため、素子の小型化が可能となる。光アイソレータの利用分野としては半導体の微細加工用レーザ、光ファイバ通信用の半導体レーザ、鋼材やセラミックスの切断及び熱処理用レーザ、医療用レーザメス等に組み込まれ、近年ではSHG(第二高調波)素子を用いて波長変換した可視のグリーンレーザやブルーレーザに組み込まれて利用することも行なわれている。
Journal of Applied Physics, Volume 35, Number 8, 2338
(1)組成式(Tb1−aMa)2O3(式中、MはMg、Zr、Hfから選択される一種以上の元素、0.01≦a<0.3)で示される結晶系が立方晶系の結晶体であって、1.06μmと532nmにおける3mm長さあたりの直線透過率がいずれも70%以上であることを特徴とする、磁気光学素子用透光性酸化テルビウム結晶。
(2)前記の酸化テルビウム結晶を磁気光学素子として用いたことを特徴とする磁気光学デバイス
(3)貴金属坩堝を用いずに還元性の雰囲気下で原料を加熱して融解し、この融液から結晶系が立方晶系の結晶体を晶出せしめ、相転移をおこさずに室温まで冷却することを特徴とする磁気光学素子用の酸化テルビウム結晶の製造方法
に関する。
純度99.9%のTb2O3粉末を131.71gと純度99.9%のSc2O3粉末を5.51g秤量し(モル比で90:10)、混合した。その後、100MPaの圧力でCIP成形した。
実施例2〜4[参考例]及び実施例5
2 原料
3 高周波コイル
4 回転楕円鏡
5 ランプ
6 原料棒
7 種結晶
8 融液帯
9 単結晶
10 上シャフト
11 下シャフト
Claims (6)
- 組成式(Tb1−aMa)2O3(式中、MはMg、Zr、Hfから選択される一種以上の元素、0.01≦a<0.3)で示される結晶系が立方晶系の結晶体であって、1.06μmと532nmにおける3mm長さあたりの直線透過率がいずれも70%以上であることを特徴とする、磁気光学素子用透光性酸化テルビウム結晶。
- 請求項1の酸化テルビウム結晶を磁気光学素子として用いたことを特徴とする磁気光学デバイス。
- 請求項1に記載の磁気光学素子用酸化テルビウム結晶の製造方法であって、還元性の雰囲気中で貴金属坩堝を用いずに原料を融解し、この融液から結晶系が立方晶系の結晶体を晶出せしめ、相転移をおこさずに室温まで冷却することを特徴とする酸化テルビウム結晶の製造方法。
- 請求項3の製造法が、スカルメルト法であることを特徴とする結晶製造法。
- 請求項3の製造法が、フローティングゾーン法であることを特徴とする結晶製造法。
- 請求項3の坩堝材質が、タングステン金属またはレニウム金属またはタングステンレニウム合金であることを特徴とする結晶製造法。
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JP2011121840A JP2011121840A (ja) | 2011-06-23 |
JP2011121840A5 JP2011121840A5 (ja) | 2013-03-21 |
JP5337011B2 true JP5337011B2 (ja) | 2013-11-06 |
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JP5526313B2 (ja) * | 2009-12-14 | 2014-06-18 | 株式会社オキサイド | 磁気光学素子用透光性酸化テルビウム焼結体 |
JP5276640B2 (ja) * | 2010-10-06 | 2013-08-28 | 信越化学工業株式会社 | 1μm帯光アイソレータ |
JP5762715B2 (ja) * | 2010-10-06 | 2015-08-12 | 信越化学工業株式会社 | 磁気光学材料、ファラデー回転子、及び光アイソレータ |
JP6052800B2 (ja) * | 2013-07-12 | 2016-12-27 | 信越化学工業株式会社 | 光アイソレータ |
JP5962619B2 (ja) * | 2013-09-12 | 2016-08-03 | 信越化学工業株式会社 | シンチレータ材料、放射線検出器及び放射線検査装置 |
CN111138192A (zh) * | 2020-01-03 | 2020-05-12 | 上海应用技术大学 | 一种氧化镥铽磁光透明陶瓷的真空热压制备方法 |
CN114452708A (zh) * | 2022-02-17 | 2022-05-10 | 安徽金三隆再生资源有限公司 | 一种氧化铽回收酸浸反应杂质处理装置及处理方法 |
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