JP5333777B2 - 有機メモリデバイス及びその製造方法 - Google Patents

有機メモリデバイス及びその製造方法 Download PDF

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JP5333777B2
JP5333777B2 JP2009511984A JP2009511984A JP5333777B2 JP 5333777 B2 JP5333777 B2 JP 5333777B2 JP 2009511984 A JP2009511984 A JP 2009511984A JP 2009511984 A JP2009511984 A JP 2009511984A JP 5333777 B2 JP5333777 B2 JP 5333777B2
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self
assembled
layer
nanoparticles
electrode
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Japanese (ja)
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JP2009538525A5 (https=
JP2009538525A (ja
Inventor
ウェイリン レオン，
プーイ シー リー，
ヤン ミン ラム，
リンシン ソン，
エビナザー， ベンジャミン ナムダス，
ジー．， スボドー マハイサルカー，
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Nanyang Technological University
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Nanyang Technological University
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • G11C13/0016—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material comprising polymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/474—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising a multilayered structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/478—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising a layer of composite material comprising interpenetrating or embedded materials, e.g. TiO2 particles in a polymer matrix
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/50—Resistive cell structure aspects
    • G11C2213/55—Structure including two electrodes, a memory active layer and at least two other layers which can be a passive or source or reservoir layer or a less doped memory active layer
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/50—Resistive cell structure aspects
    • G11C2213/56—Structure including two electrodes, a memory active layer and a so called passive or source or reservoir layer which is NOT an electrode, wherein the passive or source or reservoir layer is a source of ions which migrate afterwards in the memory active layer to be only trapped there, to form conductive filaments there or to react with the material of the memory active layer in redox way
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/031—Manufacture or treatment of data-storage electrodes
    • H10D64/035—Manufacture or treatment of data-storage electrodes comprising conductor-insulator-conductor-insulator-semiconductor structures
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/778—Nanostructure within specified host or matrix material, e.g. nanocomposite films
    • Y10S977/783—Organic host/matrix, e.g. lipid
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/943—Information storage or retrieval using nanostructure

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Composite Materials (AREA)
  • Materials Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
JP2009511984A 2006-05-22 2007-05-22 有機メモリデバイス及びその製造方法 Expired - Fee Related JP5333777B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US80216706P 2006-05-22 2006-05-22
US60/802,167 2006-05-22
PCT/SG2007/000141 WO2007136350A1 (en) 2006-05-22 2007-05-22 Organic memory device and method of its manufacture

Publications (3)

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JP2009538525A JP2009538525A (ja) 2009-11-05
JP2009538525A5 JP2009538525A5 (https=) 2010-04-02
JP5333777B2 true JP5333777B2 (ja) 2013-11-06

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US (1) US8089115B2 (https=)
JP (1) JP5333777B2 (https=)
WO (1) WO2007136350A1 (https=)

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CN102803546B (zh) * 2010-03-31 2014-12-31 日立金属株式会社 耐腐蚀性优异的被覆物品的制造方法及被覆物品

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DE102009035419B4 (de) * 2009-07-31 2018-03-08 Globalfoundries Dresden Module One Llc & Co. Kg Verfahren zur Herstellung eines CMOS-Bauelements mit molekularen Speicherelementen in einer Kontaktdurchführungsebene
TWI384616B (zh) * 2009-09-11 2013-02-01 Univ Nat Cheng Kung 具備有機多介電層之記憶體元件
FR2951028B1 (fr) * 2009-10-05 2012-08-03 Commissariat Energie Atomique Memoire organique a double grille et procede de realisation
US8941171B2 (en) * 2010-07-02 2015-01-27 Micron Technology, Inc. Flatband voltage adjustment in a semiconductor device
US20120138905A1 (en) * 2010-12-01 2012-06-07 Kookmin University Industry Academy Cooperation Foundation Flexible organic memory device and method of fabricating the same
KR101420720B1 (ko) 2011-08-26 2014-07-28 한남대학교 산학협력단 전도성 고분자를 포함하는 비휘발성 메모리 소자 및 그 제조 방법
US8772729B1 (en) 2011-09-23 2014-07-08 Rockwell Collins, Inc. APDs using nano-plasmonic metamaterials
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CN104882541B (zh) * 2015-05-28 2017-10-20 福州大学 一种金属量子点/有机半导体复合导电沟道薄膜晶体管的制备方法
CN104993051B (zh) * 2015-05-28 2017-07-04 福州大学 一种金属膜片阵列/有机半导体复合导电沟道薄膜晶体管的制备方法
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CN106098942B (zh) * 2016-07-29 2019-09-20 南京邮电大学 一种纳米柱结构有机场效应晶体管存储器及其制备方法
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US20090146202A1 (en) 2009-06-11
US8089115B2 (en) 2012-01-03
WO2007136350A1 (en) 2007-11-29
JP2009538525A (ja) 2009-11-05

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