JP2009538525A5 - - Google Patents
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- Publication number
- JP2009538525A5 JP2009538525A5 JP2009511984A JP2009511984A JP2009538525A5 JP 2009538525 A5 JP2009538525 A5 JP 2009538525A5 JP 2009511984 A JP2009511984 A JP 2009511984A JP 2009511984 A JP2009511984 A JP 2009511984A JP 2009538525 A5 JP2009538525 A5 JP 2009538525A5
- Authority
- JP
- Japan
- Prior art keywords
- self
- assembled
- electrode
- layer
- charge retention
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010410 layer Substances 0.000 claims 37
- 239000002105 nanoparticle Substances 0.000 claims 17
- 239000002086 nanomaterial Substances 0.000 claims 14
- 230000014759 maintenance of location Effects 0.000 claims 13
- 239000013545 self-assembled monolayer Substances 0.000 claims 10
- 229920001577 copolymer Polymers 0.000 claims 8
- 238000000034 method Methods 0.000 claims 7
- 239000000463 material Substances 0.000 claims 5
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical compound C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 claims 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims 4
- 239000002096 quantum dot Substances 0.000 claims 4
- 239000004065 semiconductor Substances 0.000 claims 4
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 claims 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 2
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 claims 2
- 229920003171 Poly (ethylene oxide) Polymers 0.000 claims 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims 2
- 229910052980 cadmium sulfide Inorganic materials 0.000 claims 2
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 claims 2
- 239000000919 ceramic Substances 0.000 claims 2
- 229910052802 copper Inorganic materials 0.000 claims 2
- 239000010949 copper Substances 0.000 claims 2
- 239000003989 dielectric material Substances 0.000 claims 2
- 125000005678 ethenylene group Chemical group [H]C([*:1])=C([H])[*:2] 0.000 claims 2
- 229910003472 fullerene Inorganic materials 0.000 claims 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 2
- 229910052737 gold Inorganic materials 0.000 claims 2
- 239000010931 gold Substances 0.000 claims 2
- DLINORNFHVEIFE-UHFFFAOYSA-N hydrogen peroxide;zinc Chemical compound [Zn].OO DLINORNFHVEIFE-UHFFFAOYSA-N 0.000 claims 2
- 238000011065 in-situ storage Methods 0.000 claims 2
- 229910052751 metal Inorganic materials 0.000 claims 2
- 239000002184 metal Substances 0.000 claims 2
- 229910044991 metal oxide Inorganic materials 0.000 claims 2
- 150000004706 metal oxides Chemical class 0.000 claims 2
- 239000000178 monomer Substances 0.000 claims 2
- -1 nanocluster Substances 0.000 claims 2
- 239000002121 nanofiber Substances 0.000 claims 2
- 239000002073 nanorod Substances 0.000 claims 2
- 239000002243 precursor Substances 0.000 claims 2
- 239000002094 self assembled monolayer Substances 0.000 claims 2
- 150000004756 silanes Chemical class 0.000 claims 2
- 229910052709 silver Inorganic materials 0.000 claims 2
- 239000004332 silver Substances 0.000 claims 2
- 239000010409 thin film Substances 0.000 claims 2
- 239000004408 titanium dioxide Substances 0.000 claims 2
- 239000010408 film Substances 0.000 claims 1
- 238000007641 inkjet printing Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 238000007650 screen-printing Methods 0.000 claims 1
- 238000004528 spin coating Methods 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US80216706P | 2006-05-22 | 2006-05-22 | |
| US60/802,167 | 2006-05-22 | ||
| PCT/SG2007/000141 WO2007136350A1 (en) | 2006-05-22 | 2007-05-22 | Organic memory device and method of its manufacture |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009538525A JP2009538525A (ja) | 2009-11-05 |
| JP2009538525A5 true JP2009538525A5 (https=) | 2010-04-02 |
| JP5333777B2 JP5333777B2 (ja) | 2013-11-06 |
Family
ID=38723576
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009511984A Expired - Fee Related JP5333777B2 (ja) | 2006-05-22 | 2007-05-22 | 有機メモリデバイス及びその製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US8089115B2 (https=) |
| JP (1) | JP5333777B2 (https=) |
| WO (1) | WO2007136350A1 (https=) |
Families Citing this family (35)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080296662A1 (en) * | 2007-05-30 | 2008-12-04 | Gerhard Poeppel | Discrete Trap Memory (DTM) Mediated by Fullerenes |
| US20090056794A1 (en) * | 2007-08-31 | 2009-03-05 | Texas A&M University System, The | Operating devices including embedded nanoparticles |
| US7723186B2 (en) * | 2007-12-18 | 2010-05-25 | Sandisk Corporation | Method of forming memory with floating gates including self-aligned metal nanodots using a coupling layer |
| US7968935B2 (en) | 2008-08-25 | 2011-06-28 | Seoul National University Research & Development Business Foundation | Reconfigurable semiconductor device |
| GB2464741B (en) * | 2008-10-27 | 2013-07-31 | Pragmatic Printing Ltd | FETs, semiconductor devices and their methods of manufacture |
| IT1392754B1 (it) * | 2008-12-18 | 2012-03-16 | St Microelectronics Srl | Nanoarray ad incrocio con strato organico attivo anisotropico |
| KR101291320B1 (ko) * | 2009-03-23 | 2013-07-30 | 한국전자통신연구원 | 유기 박막 트랜지스터 및 그 형성방법 |
| DE102009035419B4 (de) * | 2009-07-31 | 2018-03-08 | Globalfoundries Dresden Module One Llc & Co. Kg | Verfahren zur Herstellung eines CMOS-Bauelements mit molekularen Speicherelementen in einer Kontaktdurchführungsebene |
| TWI384616B (zh) * | 2009-09-11 | 2013-02-01 | Univ Nat Cheng Kung | 具備有機多介電層之記憶體元件 |
| FR2951028B1 (fr) * | 2009-10-05 | 2012-08-03 | Commissariat Energie Atomique | Memoire organique a double grille et procede de realisation |
| JP5498572B2 (ja) * | 2010-03-31 | 2014-05-21 | 日立ツール株式会社 | 耐食性に優れた被覆物品の製造方法および被覆物品 |
| US8941171B2 (en) * | 2010-07-02 | 2015-01-27 | Micron Technology, Inc. | Flatband voltage adjustment in a semiconductor device |
| US20120138905A1 (en) * | 2010-12-01 | 2012-06-07 | Kookmin University Industry Academy Cooperation Foundation | Flexible organic memory device and method of fabricating the same |
| KR101420720B1 (ko) | 2011-08-26 | 2014-07-28 | 한남대학교 산학협력단 | 전도성 고분자를 포함하는 비휘발성 메모리 소자 및 그 제조 방법 |
| US8772729B1 (en) | 2011-09-23 | 2014-07-08 | Rockwell Collins, Inc. | APDs using nano-plasmonic metamaterials |
| US8969850B2 (en) | 2011-09-23 | 2015-03-03 | Rockwell Collins, Inc. | Nano-structure arrays for EMR imaging |
| US8829452B1 (en) | 2011-09-23 | 2014-09-09 | Rockwell Collins, Inc. | VIS-NIR plasmonic APD detectors |
| US8492727B1 (en) * | 2011-09-23 | 2013-07-23 | Rockwell Collins, Inc. | Nano-structure arrays for EMR imaging |
| US9117722B1 (en) | 2011-09-23 | 2015-08-25 | Rockwell Collins, Inc. | Image sensor integrated circuit |
| TWI456790B (zh) * | 2012-09-28 | 2014-10-11 | Phostek Inc | 發光二極體裝置 |
| US9887042B1 (en) * | 2013-03-26 | 2018-02-06 | Ehrenberg Industries Corporation | Dielectric material, capacitor and method |
| US9470521B1 (en) | 2013-05-23 | 2016-10-18 | Rockwell Collins, Inc. | Passive range-discrimination in thermal and other imaging systems |
| US10701287B1 (en) | 2013-05-23 | 2020-06-30 | Rockwell Collins, Inc. | Passive clear air turbulence detection system and method |
| US9318717B1 (en) | 2015-01-05 | 2016-04-19 | International Business Machines Corporation | Semi-conductor device with programmable response |
| CN106033794A (zh) * | 2015-03-12 | 2016-10-19 | 中国科学院理化技术研究所 | 一种基于碳点/有机聚合物复合材料的记忆存储器件 |
| CN104882541B (zh) * | 2015-05-28 | 2017-10-20 | 福州大学 | 一种金属量子点/有机半导体复合导电沟道薄膜晶体管的制备方法 |
| CN104993051B (zh) * | 2015-05-28 | 2017-07-04 | 福州大学 | 一种金属膜片阵列/有机半导体复合导电沟道薄膜晶体管的制备方法 |
| CN105170997A (zh) * | 2015-10-13 | 2015-12-23 | 东南大学 | 双还原剂纳米金量子点的室温快速合成方法 |
| JP6548190B2 (ja) * | 2015-10-16 | 2019-07-24 | 国立研究開発法人物質・材料研究機構 | スターポリマーを含む電荷蓄積材料 |
| CN106098942B (zh) * | 2016-07-29 | 2019-09-20 | 南京邮电大学 | 一种纳米柱结构有机场效应晶体管存储器及其制备方法 |
| CN106684244B (zh) * | 2016-11-03 | 2019-07-09 | 南京邮电大学 | 一种浮栅型柔性低电压有机场效应晶体管存储器 |
| US10472563B2 (en) | 2017-02-16 | 2019-11-12 | Rohm And Haas Electronic Materials Llc | Methods for making improved quantum dot resin formulations |
| CN109713141B (zh) * | 2017-10-25 | 2021-07-16 | Tcl科技集团股份有限公司 | 一种qled器件及其制备方法 |
| KR102120482B1 (ko) * | 2018-10-05 | 2020-06-08 | 씨제이제일제당 (주) | 생분해성 고분자 나노입자를 포함하는 메모리 소자 및 이의 제조방법 |
| CN115377339B (zh) * | 2022-09-23 | 2024-10-18 | 闽都创新实验室 | 基于静电吸附量子点制备图案化qled的方法 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5740104A (en) * | 1997-01-29 | 1998-04-14 | Micron Technology, Inc. | Multi-state flash memory cell and method for programming single electron differences |
| JP2980899B1 (ja) * | 1998-09-01 | 1999-11-22 | 科学技術振興事業団 | 列状に配置された金属超微粒子を含有する金属・有機ポリマー複合構造体とその製造方法 |
| US6887332B1 (en) * | 2000-04-21 | 2005-05-03 | International Business Machines Corporation | Patterning solution deposited thin films with self-assembled monolayers |
| GB2364823A (en) * | 2000-07-12 | 2002-02-06 | Seiko Epson Corp | TFT memory device having gate insulator with charge-trapping granules |
| JP3597507B2 (ja) * | 2001-01-24 | 2004-12-08 | 松下電器産業株式会社 | 微粒子配列体とその製造方法及びこれを用いたデバイス |
| JP2003163331A (ja) * | 2001-11-28 | 2003-06-06 | Ricoh Co Ltd | 不揮発性有機半導体記憶素子及びそれを有する非接触情報管理表示装置 |
| US6674121B2 (en) * | 2001-12-14 | 2004-01-06 | The Regents Of The University Of California | Method and system for molecular charge storage field effect transistor |
| US6828685B2 (en) * | 2002-06-14 | 2004-12-07 | Hewlett-Packard Development Company, L.P. | Memory device having a semiconducting polymer film |
| US6812509B2 (en) * | 2002-06-28 | 2004-11-02 | Palo Alto Research Center Inc. | Organic ferroelectric memory cells |
| CN1864253A (zh) * | 2003-10-06 | 2006-11-15 | 马萨诸塞州技术研究院 | 非易失性存储装置 |
| EP1723676A4 (en) * | 2004-03-10 | 2009-04-15 | Nanosys Inc | MEMORY BLOCKS WITH NANO-ABILITY AND ANISOTROPE CHARGE CARRIER ARRAYS |
| US6930322B1 (en) * | 2004-03-26 | 2005-08-16 | Matsushita Electric Industrial Co., Ltd. | Combination insulator and organic semiconductor formed from self-assembling block co-polymers |
| TWI406890B (zh) * | 2004-06-08 | 2013-09-01 | Sandisk Corp | 奈米結構之沉積後包封:併入該包封體之組成物、裝置及系統 |
| JP5000516B2 (ja) * | 2004-09-21 | 2012-08-15 | 富士電機株式会社 | トンネリング用ダスト電極を有するトランジスター |
| US7355238B2 (en) * | 2004-12-06 | 2008-04-08 | Asahi Glass Company, Limited | Nonvolatile semiconductor memory device having nanoparticles for charge retention |
| KR20060070716A (ko) * | 2004-12-21 | 2006-06-26 | 한국전자통신연구원 | 유기 메모리 소자 및 제조 방법 |
-
2007
- 2007-05-22 JP JP2009511984A patent/JP5333777B2/ja not_active Expired - Fee Related
- 2007-05-22 WO PCT/SG2007/000141 patent/WO2007136350A1/en not_active Ceased
- 2007-05-22 US US12/302,200 patent/US8089115B2/en not_active Expired - Fee Related
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