JP5331806B2 - デブリ防止システムおよびリソグラフィ装置 - Google Patents

デブリ防止システムおよびリソグラフィ装置 Download PDF

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Publication number
JP5331806B2
JP5331806B2 JP2010518138A JP2010518138A JP5331806B2 JP 5331806 B2 JP5331806 B2 JP 5331806B2 JP 2010518138 A JP2010518138 A JP 2010518138A JP 2010518138 A JP2010518138 A JP 2010518138A JP 5331806 B2 JP5331806 B2 JP 5331806B2
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JP
Japan
Prior art keywords
foil trap
debris
foil
axis
prevention system
Prior art date
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Expired - Fee Related
Application number
JP2010518138A
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English (en)
Japanese (ja)
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JP2010534414A5 (enExample
JP2010534414A (ja
Inventor
スール，ワウター，アントン
ハーペン，マーテン，マリヌス，ヨハネス，ウィルヘルムス ヴァン
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ASML Netherlands BV
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ASML Netherlands BV
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0277—Electrolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B1/00—Cleaning by methods involving the use of tools
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B1/00—Cleaning by methods involving the use of tools
    • B08B1/10—Cleaning by methods involving the use of tools characterised by the type of cleaning tool
    • B08B1/16—Rigid blades, e.g. scrapers; Flexible blades, e.g. wipers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/7015—Details of optical elements
    • G03F7/70166—Capillary or channel elements, e.g. nested extreme ultraviolet [EUV] mirrors or shells, optical fibers or light guides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • General Physics & Mathematics (AREA)
  • Atmospheric Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Nanotechnology (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Plasma & Fusion (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • X-Ray Techniques (AREA)
JP2010518138A 2007-07-23 2008-07-22 デブリ防止システムおよびリソグラフィ装置 Expired - Fee Related JP5331806B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/878,306 2007-07-23
US11/878,306 US8227771B2 (en) 2007-07-23 2007-07-23 Debris prevention system and lithographic apparatus
PCT/NL2008/050502 WO2009014439A2 (en) 2007-07-23 2008-07-22 Debris prevention system and lithographic apparatus

Publications (3)

Publication Number Publication Date
JP2010534414A JP2010534414A (ja) 2010-11-04
JP2010534414A5 JP2010534414A5 (enExample) 2011-09-08
JP5331806B2 true JP5331806B2 (ja) 2013-10-30

Family

ID=39790798

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010518138A Expired - Fee Related JP5331806B2 (ja) 2007-07-23 2008-07-22 デブリ防止システムおよびリソグラフィ装置

Country Status (8)

Country Link
US (1) US8227771B2 (enExample)
EP (1) EP2168010A2 (enExample)
JP (1) JP5331806B2 (enExample)
KR (1) KR20100061450A (enExample)
CN (1) CN101755239A (enExample)
NL (1) NL1035710A1 (enExample)
TW (1) TW200907601A (enExample)
WO (1) WO2009014439A2 (enExample)

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WO2010072429A1 (en) * 2008-12-22 2010-07-01 Asml Netherlands B.V. A lithographic apparatus, a radiation system, a device manufacturing method and a debris mitigation method
JP5559562B2 (ja) 2009-02-12 2014-07-23 ギガフォトン株式会社 極端紫外光光源装置
US8805733B1 (en) 2010-09-30 2014-08-12 Allstate Insurance Company Single premium deferred annuity
US8901523B1 (en) * 2013-09-04 2014-12-02 Asml Netherlands B.V. Apparatus for protecting EUV optical elements
WO2015055374A1 (en) * 2013-10-16 2015-04-23 Asml Netherlands B.V. Radiation source, lithographic apparatus device manufacturing method, sensor system and sensing method
NL2015391A (en) * 2014-10-13 2016-08-30 Asml Netherlands Bv A Radiation Source.
CN106550542B (zh) 2015-09-17 2021-10-26 奥特斯(中国)有限公司 插入保护结构并且靠近保护结构具有纯介质层的部件载体
CN106550554B (zh) 2015-09-17 2020-08-25 奥特斯(中国)有限公司 用于制造部件载体的上面具有伪芯和不同材料的两个片的保护结构
KR102813711B1 (ko) 2019-05-02 2025-05-29 삼성전자주식회사 반도체 소자의 제조 장치 및 그를 이용한 반도체 소자의 제조 방법
US10942459B2 (en) * 2019-07-29 2021-03-09 Taiwan Semiconductor Manufacturing Company, Ltd. Lithography system and cleaning method thereof

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US6541786B1 (en) * 1997-05-12 2003-04-01 Cymer, Inc. Plasma pinch high energy with debris collector
US6064072A (en) * 1997-05-12 2000-05-16 Cymer, Inc. Plasma focus high energy photon source
US6452199B1 (en) * 1997-05-12 2002-09-17 Cymer, Inc. Plasma focus high energy photon source with blast shield
US6566667B1 (en) * 1997-05-12 2003-05-20 Cymer, Inc. Plasma focus light source with improved pulse power system
US6815700B2 (en) * 1997-05-12 2004-11-09 Cymer, Inc. Plasma focus light source with improved pulse power system
US6566668B2 (en) * 1997-05-12 2003-05-20 Cymer, Inc. Plasma focus light source with tandem ellipsoidal mirror units
US6586757B2 (en) * 1997-05-12 2003-07-01 Cymer, Inc. Plasma focus light source with active and buffer gas control
DE19753696A1 (de) * 1997-12-03 1999-06-17 Fraunhofer Ges Forschung Vorrichtung und Verfahren zur Erzeugung von Extrem-Ultraviolettstrahlung und weicher Röntgenstrahlung aus einer Gasentladung
DE19962160C2 (de) * 1999-06-29 2003-11-13 Fraunhofer Ges Forschung Vorrichtungen zur Erzeugung von Extrem-Ultraviolett- und weicher Röntgenstrahlung aus einer Gasentladung
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Also Published As

Publication number Publication date
EP2168010A2 (en) 2010-03-31
WO2009014439A3 (en) 2009-05-07
CN101755239A (zh) 2010-06-23
NL1035710A1 (nl) 2009-01-27
JP2010534414A (ja) 2010-11-04
US8227771B2 (en) 2012-07-24
US20090027637A1 (en) 2009-01-29
TW200907601A (en) 2009-02-16
KR20100061450A (ko) 2010-06-07
WO2009014439A2 (en) 2009-01-29

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