KR20100061450A - 데브리 방지 시스템 및 리소그래피 장치 - Google Patents

데브리 방지 시스템 및 리소그래피 장치 Download PDF

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Publication number
KR20100061450A
KR20100061450A KR1020107003924A KR20107003924A KR20100061450A KR 20100061450 A KR20100061450 A KR 20100061450A KR 1020107003924 A KR1020107003924 A KR 1020107003924A KR 20107003924 A KR20107003924 A KR 20107003924A KR 20100061450 A KR20100061450 A KR 20100061450A
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KR
South Korea
Prior art keywords
foil trap
radiation
axis
foils
rotation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020107003924A
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English (en)
Korean (ko)
Inventor
보우터 안톤 소어
마르텐 마리누스 요한네스 빌헬무스 반 헤르펜
Original Assignee
에이에스엠엘 네델란즈 비.브이.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 에이에스엠엘 네델란즈 비.브이. filed Critical 에이에스엠엘 네델란즈 비.브이.
Publication of KR20100061450A publication Critical patent/KR20100061450A/ko
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0277—Electrolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B1/00—Cleaning by methods involving the use of tools
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B1/00—Cleaning by methods involving the use of tools
    • B08B1/10—Cleaning by methods involving the use of tools characterised by the type of cleaning tool
    • B08B1/16—Rigid blades, e.g. scrapers; Flexible blades, e.g. wipers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/7015—Details of optical elements
    • G03F7/70166—Capillary or channel elements, e.g. nested extreme ultraviolet [EUV] mirrors or shells, optical fibers or light guides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Nanotechnology (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • X-Ray Techniques (AREA)
KR1020107003924A 2007-07-23 2008-07-22 데브리 방지 시스템 및 리소그래피 장치 Withdrawn KR20100061450A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/878,306 2007-07-23
US11/878,306 US8227771B2 (en) 2007-07-23 2007-07-23 Debris prevention system and lithographic apparatus

Publications (1)

Publication Number Publication Date
KR20100061450A true KR20100061450A (ko) 2010-06-07

Family

ID=39790798

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020107003924A Withdrawn KR20100061450A (ko) 2007-07-23 2008-07-22 데브리 방지 시스템 및 리소그래피 장치

Country Status (8)

Country Link
US (1) US8227771B2 (enExample)
EP (1) EP2168010A2 (enExample)
JP (1) JP5331806B2 (enExample)
KR (1) KR20100061450A (enExample)
CN (1) CN101755239A (enExample)
NL (1) NL1035710A1 (enExample)
TW (1) TW200907601A (enExample)
WO (1) WO2009014439A2 (enExample)

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WO2010072429A1 (en) * 2008-12-22 2010-07-01 Asml Netherlands B.V. A lithographic apparatus, a radiation system, a device manufacturing method and a debris mitigation method
JP5559562B2 (ja) 2009-02-12 2014-07-23 ギガフォトン株式会社 極端紫外光光源装置
US8805733B1 (en) 2010-09-30 2014-08-12 Allstate Insurance Company Single premium deferred annuity
US8901523B1 (en) * 2013-09-04 2014-12-02 Asml Netherlands B.V. Apparatus for protecting EUV optical elements
WO2015055374A1 (en) * 2013-10-16 2015-04-23 Asml Netherlands B.V. Radiation source, lithographic apparatus device manufacturing method, sensor system and sensing method
NL2015391A (en) * 2014-10-13 2016-08-30 Asml Netherlands Bv A Radiation Source.
CN106550542B (zh) 2015-09-17 2021-10-26 奥特斯(中国)有限公司 插入保护结构并且靠近保护结构具有纯介质层的部件载体
CN106550554B (zh) 2015-09-17 2020-08-25 奥特斯(中国)有限公司 用于制造部件载体的上面具有伪芯和不同材料的两个片的保护结构
KR102813711B1 (ko) 2019-05-02 2025-05-29 삼성전자주식회사 반도체 소자의 제조 장치 및 그를 이용한 반도체 소자의 제조 방법
US10942459B2 (en) * 2019-07-29 2021-03-09 Taiwan Semiconductor Manufacturing Company, Ltd. Lithography system and cleaning method thereof

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US6064072A (en) * 1997-05-12 2000-05-16 Cymer, Inc. Plasma focus high energy photon source
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US6566667B1 (en) * 1997-05-12 2003-05-20 Cymer, Inc. Plasma focus light source with improved pulse power system
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Also Published As

Publication number Publication date
EP2168010A2 (en) 2010-03-31
WO2009014439A3 (en) 2009-05-07
CN101755239A (zh) 2010-06-23
NL1035710A1 (nl) 2009-01-27
JP2010534414A (ja) 2010-11-04
US8227771B2 (en) 2012-07-24
US20090027637A1 (en) 2009-01-29
JP5331806B2 (ja) 2013-10-30
TW200907601A (en) 2009-02-16
WO2009014439A2 (en) 2009-01-29

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Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20100223

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid