JP5331806B2 - デブリ防止システムおよびリソグラフィ装置 - Google Patents
デブリ防止システムおよびリソグラフィ装置 Download PDFInfo
- Publication number
- JP5331806B2 JP5331806B2 JP2010518138A JP2010518138A JP5331806B2 JP 5331806 B2 JP5331806 B2 JP 5331806B2 JP 2010518138 A JP2010518138 A JP 2010518138A JP 2010518138 A JP2010518138 A JP 2010518138A JP 5331806 B2 JP5331806 B2 JP 5331806B2
- Authority
- JP
- Japan
- Prior art keywords
- foil trap
- debris
- foil
- axis
- prevention system
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000002265 prevention Effects 0.000 title claims description 21
- 239000011888 foil Substances 0.000 claims description 155
- 230000005855 radiation Effects 0.000 claims description 101
- 239000000758 substrate Substances 0.000 claims description 38
- 238000000059 patterning Methods 0.000 claims description 30
- 230000003287 optical effect Effects 0.000 claims description 24
- 238000004140 cleaning Methods 0.000 claims description 15
- 238000005286 illumination Methods 0.000 claims description 5
- 230000009471 action Effects 0.000 claims description 4
- 230000001902 propagating effect Effects 0.000 claims description 4
- 239000011538 cleaning material Substances 0.000 claims description 2
- 230000007423 decrease Effects 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- 101100204059 Caenorhabditis elegans trap-2 gene Proteins 0.000 description 14
- 230000004888 barrier function Effects 0.000 description 7
- 230000000903 blocking effect Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 238000001459 lithography Methods 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 238000009304 pastoral farming Methods 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 239000000356 contaminant Substances 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 230000010363 phase shift Effects 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 230000005670 electromagnetic radiation Effects 0.000 description 2
- 238000001900 extreme ultraviolet lithography Methods 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 238000012876 topography Methods 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 208000025174 PANDAS Diseases 0.000 description 1
- 208000021155 Paediatric autoimmune neuropsychiatric disorders associated with streptococcal infection Diseases 0.000 description 1
- 240000000220 Panda oleosa Species 0.000 description 1
- 235000016496 Panda oleosa Nutrition 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000004590 computer program Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000012864 cross contamination Methods 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 210000001747 pupil Anatomy 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0277—Electrolithographic processes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B1/00—Cleaning by methods involving the use of tools
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B1/00—Cleaning by methods involving the use of tools
- B08B1/10—Cleaning by methods involving the use of tools characterised by the type of cleaning tool
- B08B1/16—Rigid blades, e.g. scrapers; Flexible blades, e.g. wipers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/7015—Details of optical elements
- G03F7/70166—Capillary or channel elements, e.g. nested extreme ultraviolet [EUV] mirrors or shells, optical fibers or light guides
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- General Physics & Mathematics (AREA)
- Atmospheric Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Environmental & Geological Engineering (AREA)
- Nanotechnology (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mathematical Physics (AREA)
- Plasma & Fusion (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- X-Ray Techniques (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
Claims (15)
- 放射源から放出されるデブリが前記放射源からの放射と共にリソグラフィ装置内へ、または装置の中で伝播することを防止するように構成されたデブリ防止システムであって、
回転軸の周りを回転可能な第1フォイルトラップと、
前記第1フォイルトラップを前記回転軸とは垂直な方向において少なくとも部分的に囲み、放射源を配置するための中心位置に対して光学的に開いており、かつ、前記回転軸に垂直な方向に対して光学的に閉じている複数のフォイルを含む、第2フォイルトラップと、
を備え、
前記第2フォイルトラップは、前記第1フォイルトラップの回転に起因して前記第1フォイルトラップから放出されるデブリを遮断するように配置されている、
デブリ防止システム。 - 光学システムを更に含み、
前記光学システムにより画定される光軸が前記第1フォイルトラップの前記回転軸と一致する、
請求項1に記載のデブリ防止システム。 - 光学システムを更に含み、
前記光学システムにより画定される光軸が前記第1フォイルトラップの前記回転軸に対してほぼ横向きに向けられる、
請求項1に記載のデブリ防止システム。 - 前記回転軸に対して0と90°との間で増加する角度βに関して、前記第2フォイルトラップの前記フォイルの間隔は、前記角度βと共に減少する、
請求項1に記載のデブリ防止システム。 - 前記間隔は、前記回転軸に垂直な各線に関して、前記第2フォイルトラップの少なくとも1つのフォイル、また多くとも3つのフォイルが交差するような間隔である、
請求項4に記載のデブリ防止システム。 - デブリアウトレットチャネルが前記第2フォイルトラップの最下点に、またはその近くに配置される、
請求項1に記載のデブリ防止システム。 - 前記第2フォイルトラップは回転可能であり、また、洗浄システムが前記第2フォイルトラップの回転中に洗浄作用を与えるように構成されている、
請求項1に記載のデブリ防止システム。 - 前記洗浄システムは、機械的洗浄作用を行うように構成されたワイパを含む、
請求項7に記載のデブリ防止システム。 - 前記洗浄システムは、化学洗浄物質を前記第2フォイルトラップに向けるように構成されたノズルを含む、
請求項7に記載のデブリ防止システム。 - 前記第2フォイルトラップは、約0.1Hzと約10Hzとの間で変動する周波数で回転するように構成されている、
請求項7に記載のデブリ防止システム。 - 前記複数のフォイルは、ほぼ円錐形状である、
請求項1に記載のデブリ防止システム。 - 前記複数のフォイルは、ほぼ平面形状である、
請求項1に記載のデブリ防止システム。 - 前記複数のフォイルは、前記第1フォイルトラップの前記回転軸についてほぼ回転対称である、
請求項1に記載のデブリ防止システム。 - 放電生成またはレーザー生成のプラズマ源を更に含む、
請求項1に記載のデブリ防止システム。 - リソグラフィ装置であって、
放射ビームを調整するように構成された照明システムと、
パターニングデバイスを支持するように構成されたサポートであって、前記パターニングデバイスは前記放射ビームの断面にパターンを付与し、かつ、パターン付き放射ビームを形成するように構成されている、サポートと、
基板を保持するように構成された基板テーブルと、
前記基板のターゲット部分に前記パターン付き放射ビームを投影するように構成された投影システムと、
前記放射ビームを提供するように構成され、放射源から放出されるデブリが前記放射源からの放射と共に前記リソグラフィ装置内へまたは前記装置の中で伝播することを防止するように構成されており、回転軸の周りを回転可能な第1フォイルトラップ、および、前記第1フォイルトラップを前記回転軸とは垂直な方向において少なくとも部分的に囲み、放射源を配置するための中心位置に対して光学的に開いており、かつ、前記回転軸に垂直な方向に対して光学的に閉じている複数のフォイルを含む第2フォイルトラップを有し、前記第2フォイルトラップは、前記第1フォイルトラップの回転に起因して前記第1フォイルトラップから放出されるデブリを遮断するように配置されている、デブリ防止システムと、
を備えるリソグラフィ装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/878,306 | 2007-07-23 | ||
US11/878,306 US8227771B2 (en) | 2007-07-23 | 2007-07-23 | Debris prevention system and lithographic apparatus |
PCT/NL2008/050502 WO2009014439A2 (en) | 2007-07-23 | 2008-07-22 | Debris prevention system and lithographic apparatus |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2010534414A JP2010534414A (ja) | 2010-11-04 |
JP2010534414A5 JP2010534414A5 (ja) | 2011-09-08 |
JP5331806B2 true JP5331806B2 (ja) | 2013-10-30 |
Family
ID=39790798
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010518138A Expired - Fee Related JP5331806B2 (ja) | 2007-07-23 | 2008-07-22 | デブリ防止システムおよびリソグラフィ装置 |
Country Status (8)
Country | Link |
---|---|
US (1) | US8227771B2 (ja) |
EP (1) | EP2168010A2 (ja) |
JP (1) | JP5331806B2 (ja) |
KR (1) | KR20100061450A (ja) |
CN (1) | CN101755239A (ja) |
NL (1) | NL1035710A1 (ja) |
TW (1) | TW200907601A (ja) |
WO (1) | WO2009014439A2 (ja) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8736806B2 (en) | 2008-12-22 | 2014-05-27 | Asml Netherlands B.V. | Lithographic apparatus, a radiation system, a device manufacturing method and a radiation generating method |
JP5559562B2 (ja) | 2009-02-12 | 2014-07-23 | ギガフォトン株式会社 | 極端紫外光光源装置 |
US8805733B1 (en) | 2010-09-30 | 2014-08-12 | Allstate Insurance Company | Single premium deferred annuity |
US8901523B1 (en) * | 2013-09-04 | 2014-12-02 | Asml Netherlands B.V. | Apparatus for protecting EUV optical elements |
WO2015055374A1 (en) * | 2013-10-16 | 2015-04-23 | Asml Netherlands B.V. | Radiation source, lithographic apparatus device manufacturing method, sensor system and sensing method |
WO2016058746A1 (en) * | 2014-10-13 | 2016-04-21 | Asml Netherlands B.V. | A radiation source |
CN106550542B (zh) | 2015-09-17 | 2021-10-26 | 奥特斯(中国)有限公司 | 插入保护结构并且靠近保护结构具有纯介质层的部件载体 |
CN106550554B (zh) | 2015-09-17 | 2020-08-25 | 奥特斯(中国)有限公司 | 用于制造部件载体的上面具有伪芯和不同材料的两个片的保护结构 |
KR20200128275A (ko) | 2019-05-02 | 2020-11-12 | 삼성전자주식회사 | 반도체 소자의 제조 장치 및 그를 이용한 반도체 소자의 제조 방법 |
US10942459B2 (en) * | 2019-07-29 | 2021-03-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Lithography system and cleaning method thereof |
Family Cites Families (43)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6172324B1 (en) * | 1997-04-28 | 2001-01-09 | Science Research Laboratory, Inc. | Plasma focus radiation source |
US6566667B1 (en) * | 1997-05-12 | 2003-05-20 | Cymer, Inc. | Plasma focus light source with improved pulse power system |
US6541786B1 (en) * | 1997-05-12 | 2003-04-01 | Cymer, Inc. | Plasma pinch high energy with debris collector |
US6586757B2 (en) * | 1997-05-12 | 2003-07-01 | Cymer, Inc. | Plasma focus light source with active and buffer gas control |
US6815700B2 (en) * | 1997-05-12 | 2004-11-09 | Cymer, Inc. | Plasma focus light source with improved pulse power system |
US6064072A (en) * | 1997-05-12 | 2000-05-16 | Cymer, Inc. | Plasma focus high energy photon source |
US6452199B1 (en) * | 1997-05-12 | 2002-09-17 | Cymer, Inc. | Plasma focus high energy photon source with blast shield |
US6566668B2 (en) * | 1997-05-12 | 2003-05-20 | Cymer, Inc. | Plasma focus light source with tandem ellipsoidal mirror units |
DE19753696A1 (de) * | 1997-12-03 | 1999-06-17 | Fraunhofer Ges Forschung | Vorrichtung und Verfahren zur Erzeugung von Extrem-Ultraviolettstrahlung und weicher Röntgenstrahlung aus einer Gasentladung |
DE19962160C2 (de) * | 1999-06-29 | 2003-11-13 | Fraunhofer Ges Forschung | Vorrichtungen zur Erzeugung von Extrem-Ultraviolett- und weicher Röntgenstrahlung aus einer Gasentladung |
US7180081B2 (en) * | 2000-06-09 | 2007-02-20 | Cymer, Inc. | Discharge produced plasma EUV light source |
US6972421B2 (en) * | 2000-06-09 | 2005-12-06 | Cymer, Inc. | Extreme ultraviolet light source |
RU2206186C2 (ru) * | 2000-07-04 | 2003-06-10 | Государственный научный центр Российской Федерации Троицкий институт инновационных и термоядерных исследований | Способ получения коротковолнового излучения из газоразрядной плазмы и устройство для его реализации |
US7405416B2 (en) * | 2005-02-25 | 2008-07-29 | Cymer, Inc. | Method and apparatus for EUV plasma source target delivery |
US6998785B1 (en) * | 2001-07-13 | 2006-02-14 | University Of Central Florida Research Foundation, Inc. | Liquid-jet/liquid droplet initiated plasma discharge for generating useful plasma radiation |
DE10238096B3 (de) * | 2002-08-21 | 2004-02-19 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Gasentladungslampe |
JP4115913B2 (ja) * | 2002-08-23 | 2008-07-09 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフィ投影装置及び前記装置で使用する微粒子バリヤ |
SG153664A1 (en) * | 2002-09-19 | 2009-07-29 | Asml Netherlands Bv | Radiation source, lithographic apparatus, and device manufacturing method |
DE10260458B3 (de) * | 2002-12-19 | 2004-07-22 | Xtreme Technologies Gmbh | Strahlungsquelle mit hoher durchschnittlicher EUV-Strahlungsleistung |
US6885015B2 (en) * | 2002-12-30 | 2005-04-26 | Intel Corporation | Thermionic-cathode for pre-ionization of an extreme ultraviolet (EUV) source supply |
DE10310623B8 (de) * | 2003-03-10 | 2005-12-01 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren und Vorrichtung zum Erzeugen eines Plasmas durch elektrische Entladung in einem Entladungsraum |
EP1629268B1 (de) * | 2003-05-22 | 2013-05-15 | Philips Intellectual Property & Standards GmbH | Verfahren und vorrichtung zum reinigen mindestens einer optischen komponente |
US7230258B2 (en) * | 2003-07-24 | 2007-06-12 | Intel Corporation | Plasma-based debris mitigation for extreme ultraviolet (EUV) light source |
DE10342239B4 (de) * | 2003-09-11 | 2018-06-07 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren und Vorrichtung zum Erzeugen von Extrem-Ultraviolettstrahlung oder weicher Röntgenstrahlung |
US7180082B1 (en) * | 2004-02-19 | 2007-02-20 | The United States Of America As Represented By The United States Department Of Energy | Method for plasma formation for extreme ultraviolet lithography-theta pinch |
US7481544B2 (en) * | 2004-03-05 | 2009-01-27 | Optical Research Associates | Grazing incidence relays |
US7161653B2 (en) * | 2004-09-20 | 2007-01-09 | Asml Netherlands B.V. | Lithographic apparatus having a contaminant trapping system, a contamination trapping system, a device manufacturing method, and a method for improving trapping of contaminants in a lithographic apparatus |
US7145132B2 (en) * | 2004-12-27 | 2006-12-05 | Asml Netherlands B.V. | Lithographic apparatus, illumination system and debris trapping system |
SG123770A1 (en) * | 2004-12-28 | 2006-07-26 | Asml Netherlands Bv | Lithographic apparatus, radiation system and filt er system |
JP4366358B2 (ja) * | 2004-12-29 | 2009-11-18 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフィ装置、照明システム、フィルタ・システム、およびそのようなフィルタ・システムのサポートを冷却するための方法 |
US7449703B2 (en) * | 2005-02-25 | 2008-11-11 | Cymer, Inc. | Method and apparatus for EUV plasma source target delivery target material handling |
US7115887B1 (en) * | 2005-03-15 | 2006-10-03 | The United States Of America As Represented By The United States Department Of Energy | Method for generating extreme ultraviolet with mather-type plasma accelerators for use in Extreme Ultraviolet Lithography |
DE102005020521B4 (de) * | 2005-04-29 | 2013-05-02 | Xtreme Technologies Gmbh | Verfahren und Anordnung zur Unterdrückung von Debris bei der Erzeugung kurzwelliger Strahlung auf Basis eines Plasmas |
DE102005025624B4 (de) * | 2005-06-01 | 2010-03-18 | Xtreme Technologies Gmbh | Anordnung zur Erzeugung von intensiver kurzwelliger Strahlung auf Basis eines Gasentladungsplasmas |
EP1734408B1 (en) * | 2005-06-14 | 2008-12-17 | Philips Intellectual Property & Standards GmbH | Measurement setup with improved sensor lifetime, in particular for measuring EUV energy |
DE102005030304B4 (de) * | 2005-06-27 | 2008-06-26 | Xtreme Technologies Gmbh | Vorrichtung und Verfahren zur Erzeugung von extrem ultravioletter Strahlung |
US7397056B2 (en) * | 2005-07-06 | 2008-07-08 | Asml Netherlands B.V. | Lithographic apparatus, contaminant trap, and device manufacturing method |
US7332731B2 (en) * | 2005-12-06 | 2008-02-19 | Asml Netherlands, B.V. | Radiation system and lithographic apparatus |
US7453071B2 (en) * | 2006-03-29 | 2008-11-18 | Asml Netherlands B.V. | Contamination barrier and lithographic apparatus comprising same |
US7442948B2 (en) * | 2006-05-15 | 2008-10-28 | Asml Netherlands B.V. | Contamination barrier and lithographic apparatus |
US7825390B2 (en) * | 2007-02-14 | 2010-11-02 | Asml Netherlands B.V. | Apparatus with plasma radiation source and method of forming a beam of radiation and lithographic apparatus |
US7663127B2 (en) * | 2007-03-13 | 2010-02-16 | Globalfoundries Inc. | EUV debris mitigation filter and method for fabricating semiconductor dies using same |
US7839482B2 (en) * | 2007-05-21 | 2010-11-23 | Asml Netherlands B.V. | Assembly comprising a radiation source, a reflector and a contaminant barrier |
-
2007
- 2007-07-23 US US11/878,306 patent/US8227771B2/en not_active Expired - Fee Related
-
2008
- 2008-07-17 NL NL1035710A patent/NL1035710A1/nl active Search and Examination
- 2008-07-21 TW TW097127673A patent/TW200907601A/zh unknown
- 2008-07-22 CN CN200880025020A patent/CN101755239A/zh active Pending
- 2008-07-22 WO PCT/NL2008/050502 patent/WO2009014439A2/en active Application Filing
- 2008-07-22 EP EP08779048A patent/EP2168010A2/en not_active Withdrawn
- 2008-07-22 JP JP2010518138A patent/JP5331806B2/ja not_active Expired - Fee Related
- 2008-07-22 KR KR1020107003924A patent/KR20100061450A/ko not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
TW200907601A (en) | 2009-02-16 |
NL1035710A1 (nl) | 2009-01-27 |
KR20100061450A (ko) | 2010-06-07 |
WO2009014439A3 (en) | 2009-05-07 |
EP2168010A2 (en) | 2010-03-31 |
US8227771B2 (en) | 2012-07-24 |
JP2010534414A (ja) | 2010-11-04 |
CN101755239A (zh) | 2010-06-23 |
US20090027637A1 (en) | 2009-01-29 |
WO2009014439A2 (en) | 2009-01-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5331806B2 (ja) | デブリ防止システムおよびリソグラフィ装置 | |
JP4799620B2 (ja) | 放射システムおよびリソグラフィ装置 | |
JP5553833B2 (ja) | 放射源およびリソグラフィ装置 | |
JP5496964B2 (ja) | 光センサ装置及びeuv放射を検出する方法 | |
JP5070264B2 (ja) | ソースモジュール、放射ソースおよびリソグラフィ装置 | |
JP4567659B2 (ja) | リソグフィ装置およびデバイス製造方法 | |
JP4563930B2 (ja) | リソグラフィ装置、照明系、及びフィルタ・システム | |
JP5162546B2 (ja) | 放射源及びリソグラフィ装置 | |
JP4446996B2 (ja) | 放射システムおよびリソグラフィ装置 | |
JP2006332654A (ja) | 放射システム及びリソグラフィ装置 | |
JP2006332654A5 (ja) | ||
JP5577351B2 (ja) | リソグラフィ装置および放射システム | |
JP2010062560A5 (ja) | ||
JP5249296B2 (ja) | 汚染物トラップシステム及び汚染物トラップシステムを有するリソグラフィ装置 | |
JP2010522427A (ja) | 汚染防止システム、リソグラフィ装置、放射源およびデバイス製造方法 | |
JP5531053B2 (ja) | 放射源、リソグラフィ装置及びデバイス製造方法 | |
JP6395832B2 (ja) | 放射源用コンポーネント、関連した放射源およびリソグラフィ装置 | |
JP4764900B2 (ja) | アセンブリ及びリソグラフィ投影装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110721 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20110721 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20120905 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120911 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20121206 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20130107 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130502 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20130514 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20130710 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20130729 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
LAPS | Cancellation because of no payment of annual fees |