CN101755239A - 碎片防止系统和光刻设备 - Google Patents

碎片防止系统和光刻设备 Download PDF

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Publication number
CN101755239A
CN101755239A CN200880025020A CN200880025020A CN101755239A CN 101755239 A CN101755239 A CN 101755239A CN 200880025020 A CN200880025020 A CN 200880025020A CN 200880025020 A CN200880025020 A CN 200880025020A CN 101755239 A CN101755239 A CN 101755239A
Authority
CN
China
Prior art keywords
prevention system
foil trap
debris prevention
radiation
debris
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN200880025020A
Other languages
English (en)
Chinese (zh)
Inventor
W·A·索尔
M·M·J·W·范赫彭
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASML Holding NV
Original Assignee
ASML Holding NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ASML Holding NV filed Critical ASML Holding NV
Publication of CN101755239A publication Critical patent/CN101755239A/zh
Pending legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B1/00—Cleaning by methods involving the use of tools
    • B08B1/10—Cleaning by methods involving the use of tools characterised by the type of cleaning tool
    • B08B1/16—Rigid blades, e.g. scrapers; Flexible blades, e.g. wipers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/7015—Details of optical elements
    • G03F7/70166—Capillary or channel elements, e.g. nested extreme ultraviolet [EUV] mirrors or shells, optical fibers or light guides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2045—Electron beam lithography processes

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Public Health (AREA)
  • Epidemiology (AREA)
  • Health & Medical Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Environmental & Geological Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Plasma & Fusion (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • X-Ray Techniques (AREA)
CN200880025020A 2007-07-23 2008-07-22 碎片防止系统和光刻设备 Pending CN101755239A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/878,306 US8227771B2 (en) 2007-07-23 2007-07-23 Debris prevention system and lithographic apparatus
US11/878,306 2007-07-23
PCT/NL2008/050502 WO2009014439A2 (en) 2007-07-23 2008-07-22 Debris prevention system and lithographic apparatus

Publications (1)

Publication Number Publication Date
CN101755239A true CN101755239A (zh) 2010-06-23

Family

ID=39790798

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200880025020A Pending CN101755239A (zh) 2007-07-23 2008-07-22 碎片防止系统和光刻设备

Country Status (8)

Country Link
US (1) US8227771B2 (enExample)
EP (1) EP2168010A2 (enExample)
JP (1) JP5331806B2 (enExample)
KR (1) KR20100061450A (enExample)
CN (1) CN101755239A (enExample)
NL (1) NL1035710A1 (enExample)
TW (1) TW200907601A (enExample)
WO (1) WO2009014439A2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105518530A (zh) * 2013-09-04 2016-04-20 Asml荷兰有限公司 用于保护euv光学元件的设备

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JP5577351B2 (ja) 2008-12-22 2014-08-20 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置および放射システム
JP5559562B2 (ja) 2009-02-12 2014-07-23 ギガフォトン株式会社 極端紫外光光源装置
US8805733B1 (en) 2010-09-30 2014-08-12 Allstate Insurance Company Single premium deferred annuity
US10222701B2 (en) * 2013-10-16 2019-03-05 Asml Netherlands B.V. Radiation source, lithographic apparatus device manufacturing method, sensor system and sensing method
NL2015391A (en) * 2014-10-13 2016-08-30 Asml Netherlands Bv A Radiation Source.
CN106550542B (zh) 2015-09-17 2021-10-26 奥特斯(中国)有限公司 插入保护结构并且靠近保护结构具有纯介质层的部件载体
CN106550554B (zh) 2015-09-17 2020-08-25 奥特斯(中国)有限公司 用于制造部件载体的上面具有伪芯和不同材料的两个片的保护结构
KR102813711B1 (ko) 2019-05-02 2025-05-29 삼성전자주식회사 반도체 소자의 제조 장치 및 그를 이용한 반도체 소자의 제조 방법
US10942459B2 (en) * 2019-07-29 2021-03-09 Taiwan Semiconductor Manufacturing Company, Ltd. Lithography system and cleaning method thereof

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105518530A (zh) * 2013-09-04 2016-04-20 Asml荷兰有限公司 用于保护euv光学元件的设备
CN105518530B (zh) * 2013-09-04 2019-09-24 Asml荷兰有限公司 用于保护euv光学元件的设备

Also Published As

Publication number Publication date
NL1035710A1 (nl) 2009-01-27
JP2010534414A (ja) 2010-11-04
TW200907601A (en) 2009-02-16
WO2009014439A2 (en) 2009-01-29
US20090027637A1 (en) 2009-01-29
EP2168010A2 (en) 2010-03-31
KR20100061450A (ko) 2010-06-07
JP5331806B2 (ja) 2013-10-30
US8227771B2 (en) 2012-07-24
WO2009014439A3 (en) 2009-05-07

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Application publication date: 20100623