JP5313866B2 - 金属の除去速度を制御するためのハロゲン化物アニオン - Google Patents

金属の除去速度を制御するためのハロゲン化物アニオン Download PDF

Info

Publication number
JP5313866B2
JP5313866B2 JP2009501475A JP2009501475A JP5313866B2 JP 5313866 B2 JP5313866 B2 JP 5313866B2 JP 2009501475 A JP2009501475 A JP 2009501475A JP 2009501475 A JP2009501475 A JP 2009501475A JP 5313866 B2 JP5313866 B2 JP 5313866B2
Authority
JP
Japan
Prior art keywords
bromide
chloride
polishing
substrate
chemical mechanical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2009501475A
Other languages
English (en)
Japanese (ja)
Other versions
JP2009530853A5 (enExample
JP2009530853A (ja
Inventor
リ，ショウチャン
Original Assignee
キャボット マイクロエレクトロニクス コーポレイション
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by キャボット マイクロエレクトロニクス コーポレイション filed Critical キャボット マイクロエレクトロニクス コーポレイション
Publication of JP2009530853A publication Critical patent/JP2009530853A/ja
Publication of JP2009530853A5 publication Critical patent/JP2009530853A5/ja
Application granted granted Critical
Publication of JP5313866B2 publication Critical patent/JP5313866B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Weting (AREA)
JP2009501475A 2006-03-23 2007-03-16 金属の除去速度を制御するためのハロゲン化物アニオン Expired - Fee Related JP5313866B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/388,085 US7820067B2 (en) 2006-03-23 2006-03-23 Halide anions for metal removal rate control
US11/388,085 2006-03-23
PCT/US2007/006709 WO2007111855A2 (en) 2006-03-23 2007-03-16 Halide anions for metal removal rate control

Publications (3)

Publication Number Publication Date
JP2009530853A JP2009530853A (ja) 2009-08-27
JP2009530853A5 JP2009530853A5 (enExample) 2010-05-06
JP5313866B2 true JP5313866B2 (ja) 2013-10-09

Family

ID=38450247

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009501475A Expired - Fee Related JP5313866B2 (ja) 2006-03-23 2007-03-16 金属の除去速度を制御するためのハロゲン化物アニオン

Country Status (9)

Country Link
US (1) US7820067B2 (enExample)
EP (1) EP1996664B1 (enExample)
JP (1) JP5313866B2 (enExample)
KR (1) KR101364318B1 (enExample)
CN (1) CN101389724B (enExample)
IL (1) IL192550A0 (enExample)
MY (1) MY145564A (enExample)
TW (1) TWI343406B (enExample)
WO (1) WO2007111855A2 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070068087A1 (en) * 2005-09-26 2007-03-29 Cabot Microelectronics Corporation Metal cations for initiating polishing
US8591763B2 (en) * 2006-03-23 2013-11-26 Cabot Microelectronics Corporation Halide anions for metal removal rate control
US8425797B2 (en) * 2008-03-21 2013-04-23 Cabot Microelectronics Corporation Compositions for polishing aluminum/copper and titanium in damascene structures
US8226840B2 (en) 2008-05-02 2012-07-24 Micron Technology, Inc. Methods of removing silicon dioxide
US20100096584A1 (en) * 2008-10-22 2010-04-22 Fujimi Corporation Polishing Composition and Polishing Method Using the Same
US10858544B2 (en) * 2018-05-24 2020-12-08 Taiwan Semiconductor Manufacturing Company Ltd. Chemical mechanical polishing slurry and chemical mechanical polishing process using the same
EP3926663A4 (en) * 2019-02-13 2022-12-21 Tokuyama Corporation SEMICONDUCTOR WAFER TREATMENT LIQUID WITH HYPOCHLORITIONS AND PH BUFFER
CN110052909B (zh) * 2019-03-25 2020-08-04 东阳市恒业钢带有限公司 一种钢带无尘环保型抛光装置
CN114180831B (zh) * 2021-12-29 2024-04-02 中国建筑材料科学研究总院有限公司 一种可光刻玻璃及其微结构加工方法

Family Cites Families (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5196353A (en) 1992-01-03 1993-03-23 Micron Technology, Inc. Method for controlling a semiconductor (CMP) process by measuring a surface temperature and developing a thermal image of the wafer
US6614529B1 (en) 1992-12-28 2003-09-02 Applied Materials, Inc. In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization
US5658183A (en) 1993-08-25 1997-08-19 Micron Technology, Inc. System for real-time control of semiconductor wafer polishing including optical monitoring
US5433651A (en) 1993-12-22 1995-07-18 International Business Machines Corporation In-situ endpoint detection and process monitoring method and apparatus for chemical-mechanical polishing
JP3270282B2 (ja) 1994-02-21 2002-04-02 株式会社東芝 半導体製造装置及び半導体装置の製造方法
JP3313505B2 (ja) 1994-04-14 2002-08-12 株式会社日立製作所 研磨加工法
US5893796A (en) 1995-03-28 1999-04-13 Applied Materials, Inc. Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus
US5964643A (en) 1995-03-28 1999-10-12 Applied Materials, Inc. Apparatus and method for in-situ monitoring of chemical mechanical polishing operations
US5838447A (en) 1995-07-20 1998-11-17 Ebara Corporation Polishing apparatus including thickness or flatness detector
ATE312895T1 (de) 1996-07-25 2005-12-15 Dupont Air Prod Nanomaterials Zusammensetzung und verfahren zum chemisch- mechanischen polieren
US5872633A (en) 1996-07-26 1999-02-16 Speedfam Corporation Methods and apparatus for detecting removal of thin film layers during planarization
US6039891A (en) 1996-09-24 2000-03-21 Cabot Corporation Multi-oxidizer precursor for chemical mechanical polishing
US5958288A (en) * 1996-11-26 1999-09-28 Cabot Corporation Composition and slurry useful for metal CMP
US6294027B1 (en) 1997-10-21 2001-09-25 Lam Research Corporation Methods and apparatus for cleaning semiconductor substrates after polishing of copper film
US6435947B2 (en) 1998-05-26 2002-08-20 Cabot Microelectronics Corporation CMP polishing pad including a solid catalyst
US6177026B1 (en) 1998-05-26 2001-01-23 Cabot Microelectronics Corporation CMP slurry containing a solid catalyst
ATE474899T1 (de) 1998-10-23 2010-08-15 Fujifilm Electronic Materials Eine chemisch-mechanisch polierende aufschlämmung,eine beschleunigerlösung enthaltend
CN1966548B (zh) * 1999-08-17 2011-03-23 日立化成工业株式会社 化学机械研磨用研磨剂及基板的研磨法
TW501197B (en) * 1999-08-17 2002-09-01 Hitachi Chemical Co Ltd Polishing compound for chemical mechanical polishing and method for polishing substrate
JP4264781B2 (ja) 1999-09-20 2009-05-20 株式会社フジミインコーポレーテッド 研磨用組成物および研磨方法
US6294072B1 (en) 1999-09-20 2001-09-25 Aeromet Technologies, Inc. Removal of metal oxide scale from metal products
US6582761B1 (en) 1999-11-22 2003-06-24 Jsr Corporation Method of production of composited particle, composited particle produced by this method and aqueous dispersion for chemical mechanical polishing containing this composited particle, and method of production of aqueous dispersion for chemical mechanical polishing
US6461227B1 (en) * 2000-10-17 2002-10-08 Cabot Microelectronics Corporation Method of polishing a memory or rigid disk with an ammonia-and/or halide-containing composition
US6787061B1 (en) 2000-11-16 2004-09-07 Intel Corporation Copper polish slurry for reduced interlayer dielectric erosion and method of using same
US20020104269A1 (en) 2001-01-26 2002-08-08 Applied Materials, Inc. Photochemically enhanced chemical polish
KR20020071735A (ko) 2001-03-02 2002-09-13 스미또모 가가꾸 고오교오 가부시끼가이샤 금속 연마재 조성물 및 연마 방법
US6783432B2 (en) 2001-06-04 2004-08-31 Applied Materials Inc. Additives for pressure sensitive polishing compositions
US6812193B2 (en) 2001-08-31 2004-11-02 International Business Machines Corporation Slurry for mechanical polishing (CMP) of metals and use thereof
US6719920B2 (en) 2001-11-30 2004-04-13 Intel Corporation Slurry for polishing a barrier layer
US6730592B2 (en) * 2001-12-21 2004-05-04 Micron Technology, Inc. Methods for planarization of metal-containing surfaces using halogens and halide salts
US7316603B2 (en) * 2002-01-22 2008-01-08 Cabot Microelectronics Corporation Compositions and methods for tantalum CMP
US20030168627A1 (en) * 2002-02-22 2003-09-11 Singh Rajiv K. Slurry and method for chemical mechanical polishing of metal structures including refractory metal based barrier layers
US6821309B2 (en) * 2002-02-22 2004-11-23 University Of Florida Chemical-mechanical polishing slurry for polishing of copper or silver films
US6641630B1 (en) * 2002-06-06 2003-11-04 Cabot Microelectronics Corp. CMP compositions containing iodine and an iodine vapor-trapping agent
US7300601B2 (en) * 2002-12-10 2007-11-27 Advanced Technology Materials, Inc. Passivative chemical mechanical polishing composition for copper film planarization
JP2004343016A (ja) * 2003-05-19 2004-12-02 Jsr Corp 研磨パッド及び研磨方法
GB2402941B (en) * 2003-06-09 2007-06-27 Kao Corp Method for manufacturing substrate
US20050076580A1 (en) * 2003-10-10 2005-04-14 Air Products And Chemicals, Inc. Polishing composition and use thereof
US20050097825A1 (en) * 2003-11-06 2005-05-12 Jinru Bian Compositions and methods for a barrier removal
US20050104048A1 (en) * 2003-11-13 2005-05-19 Thomas Terence M. Compositions and methods for polishing copper

Also Published As

Publication number Publication date
IL192550A0 (en) 2009-02-11
US7820067B2 (en) 2010-10-26
KR20080108562A (ko) 2008-12-15
TWI343406B (en) 2011-06-11
EP1996664B1 (en) 2012-12-05
CN101389724A (zh) 2009-03-18
KR101364318B1 (ko) 2014-02-18
JP2009530853A (ja) 2009-08-27
CN101389724B (zh) 2012-05-23
MY145564A (en) 2012-02-29
EP1996664A2 (en) 2008-12-03
WO2007111855A2 (en) 2007-10-04
WO2007111855A3 (en) 2007-11-15
US20070224822A1 (en) 2007-09-27
TW200804548A (en) 2008-01-16

Similar Documents

Publication Publication Date Title
KR102957540B1 (ko) 벌크 텅스텐 슬러리의 배리어 필름 제거율을 증가시키는 방법
TWI414573B (zh) 半導體材料之ｃｍｐ之組合物及方法
EP2431434B1 (en) Polishing Composition for Noble Metals
CN101896571B (zh) 用于金属移除速率控制的卤化物阴离子
JP5175270B2 (ja) ポリエーテルアミンを含有する研磨組成物
JP5313885B2 (ja) 窒化シリコン材料を研磨するための組成物および方法
JP5596344B2 (ja) コロイダルシリカを利用した酸化ケイ素研磨方法
JP2009530853A (ja) 金属の除去速度を制御するためのハロゲン化物アニオン
TWI384061B (zh) 銅鈍化ｃｍｐ組合物及方法
KR20080059397A (ko) 폴리싱 유체 및 ｃｍｐ 방법
JP5576112B2 (ja) ヨウ素酸塩を含有する化学機械研磨用組成物及び化学機械研磨方法
JP2008516465A (ja) 貴金属研磨のためのポリマー添加剤を伴うｃｍｐ組成物
TW201726883A (zh) 研磨用組成物及使用此組成物之研磨方法、以及使用此等之經研磨之研磨對象物的製造方法
JP5144516B2 (ja) 砥材を有しない研磨システム

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100316

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20100316

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20120621

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20120626

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20120925

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20121002

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20121128

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20130604

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20130704

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

Ref document number: 5313866

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees