CN101389724B - 用于金属移除速率控制的卤化物阴离子 - Google Patents

用于金属移除速率控制的卤化物阴离子 Download PDF

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Publication number
CN101389724B
CN101389724B CN2007800066952A CN200780006695A CN101389724B CN 101389724 B CN101389724 B CN 101389724B CN 2007800066952 A CN2007800066952 A CN 2007800066952A CN 200780006695 A CN200780006695 A CN 200780006695A CN 101389724 B CN101389724 B CN 101389724B
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China
Prior art keywords
bromide
chloride
polishing
substrate
polishing system
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Expired - Fee Related
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CN2007800066952A
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English (en)
Chinese (zh)
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CN101389724A (zh
Inventor
李守田
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CMC Materials LLC
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Cabot Microelectronics Corp
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Publication of CN101389724A publication Critical patent/CN101389724A/zh
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Weting (AREA)
CN2007800066952A 2006-03-23 2007-03-16 用于金属移除速率控制的卤化物阴离子 Expired - Fee Related CN101389724B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/388,085 US7820067B2 (en) 2006-03-23 2006-03-23 Halide anions for metal removal rate control
US11/388,085 2006-03-23
PCT/US2007/006709 WO2007111855A2 (en) 2006-03-23 2007-03-16 Halide anions for metal removal rate control

Publications (2)

Publication Number Publication Date
CN101389724A CN101389724A (zh) 2009-03-18
CN101389724B true CN101389724B (zh) 2012-05-23

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Family Applications (1)

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CN2007800066952A Expired - Fee Related CN101389724B (zh) 2006-03-23 2007-03-16 用于金属移除速率控制的卤化物阴离子

Country Status (9)

Country Link
US (1) US7820067B2 (enExample)
EP (1) EP1996664B1 (enExample)
JP (1) JP5313866B2 (enExample)
KR (1) KR101364318B1 (enExample)
CN (1) CN101389724B (enExample)
IL (1) IL192550A0 (enExample)
MY (1) MY145564A (enExample)
TW (1) TWI343406B (enExample)
WO (1) WO2007111855A2 (enExample)

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US20070068087A1 (en) * 2005-09-26 2007-03-29 Cabot Microelectronics Corporation Metal cations for initiating polishing
US8591763B2 (en) * 2006-03-23 2013-11-26 Cabot Microelectronics Corporation Halide anions for metal removal rate control
US8425797B2 (en) * 2008-03-21 2013-04-23 Cabot Microelectronics Corporation Compositions for polishing aluminum/copper and titanium in damascene structures
US8226840B2 (en) 2008-05-02 2012-07-24 Micron Technology, Inc. Methods of removing silicon dioxide
US20100096584A1 (en) * 2008-10-22 2010-04-22 Fujimi Corporation Polishing Composition and Polishing Method Using the Same
US10858544B2 (en) * 2018-05-24 2020-12-08 Taiwan Semiconductor Manufacturing Company Ltd. Chemical mechanical polishing slurry and chemical mechanical polishing process using the same
EP3926663A4 (en) * 2019-02-13 2022-12-21 Tokuyama Corporation SEMICONDUCTOR WAFER TREATMENT LIQUID WITH HYPOCHLORITIONS AND PH BUFFER
CN110052909B (zh) * 2019-03-25 2020-08-04 东阳市恒业钢带有限公司 一种钢带无尘环保型抛光装置
CN114180831B (zh) * 2021-12-29 2024-04-02 中国建筑材料科学研究总院有限公司 一种可光刻玻璃及其微结构加工方法

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CN1371528A (zh) * 1999-08-17 2002-09-25 日立化成工业株式会社 化学机械研磨用研磨剂及基板的研磨法
WO2002033014A1 (en) * 2000-10-17 2002-04-25 Cabot Microelectronics Corporation Method of polishing a memory or rigid disk with an ammonia and/or halide-containing composition

Also Published As

Publication number Publication date
IL192550A0 (en) 2009-02-11
US7820067B2 (en) 2010-10-26
KR20080108562A (ko) 2008-12-15
TWI343406B (en) 2011-06-11
EP1996664B1 (en) 2012-12-05
CN101389724A (zh) 2009-03-18
KR101364318B1 (ko) 2014-02-18
JP2009530853A (ja) 2009-08-27
MY145564A (en) 2012-02-29
EP1996664A2 (en) 2008-12-03
WO2007111855A2 (en) 2007-10-04
WO2007111855A3 (en) 2007-11-15
US20070224822A1 (en) 2007-09-27
TW200804548A (en) 2008-01-16
JP5313866B2 (ja) 2013-10-09

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Granted publication date: 20120523

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