CN101389724B - 用于金属移除速率控制的卤化物阴离子 - Google Patents

用于金属移除速率控制的卤化物阴离子 Download PDF

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Publication number
CN101389724B
CN101389724B CN2007800066952A CN200780006695A CN101389724B CN 101389724 B CN101389724 B CN 101389724B CN 2007800066952 A CN2007800066952 A CN 2007800066952A CN 200780006695 A CN200780006695 A CN 200780006695A CN 101389724 B CN101389724 B CN 101389724B
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CN
China
Prior art keywords
bromide
chloride
polishing
substrate
polishing system
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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CN2007800066952A
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English (en)
Chinese (zh)
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CN101389724A (zh
Inventor
李守田
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Cabot Corp
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Cabot Corp
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Publication of CN101389724A publication Critical patent/CN101389724A/zh
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Publication of CN101389724B publication Critical patent/CN101389724B/zh
Expired - Fee Related legal-status Critical Current
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Weting (AREA)
CN2007800066952A 2006-03-23 2007-03-16 用于金属移除速率控制的卤化物阴离子 Expired - Fee Related CN101389724B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/388,085 US7820067B2 (en) 2006-03-23 2006-03-23 Halide anions for metal removal rate control
US11/388,085 2006-03-23
PCT/US2007/006709 WO2007111855A2 (en) 2006-03-23 2007-03-16 Halide anions for metal removal rate control

Publications (2)

Publication Number Publication Date
CN101389724A CN101389724A (zh) 2009-03-18
CN101389724B true CN101389724B (zh) 2012-05-23

Family

ID=38450247

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2007800066952A Expired - Fee Related CN101389724B (zh) 2006-03-23 2007-03-16 用于金属移除速率控制的卤化物阴离子

Country Status (9)

Country Link
US (1) US7820067B2 (enExample)
EP (1) EP1996664B1 (enExample)
JP (1) JP5313866B2 (enExample)
KR (1) KR101364318B1 (enExample)
CN (1) CN101389724B (enExample)
IL (1) IL192550A0 (enExample)
MY (1) MY145564A (enExample)
TW (1) TWI343406B (enExample)
WO (1) WO2007111855A2 (enExample)

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* Cited by examiner, † Cited by third party
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WO2007038399A2 (en) * 2005-09-26 2007-04-05 Cabot Microelectronics Corporation Metal cations for initiating chemical mechanical polishing
US8591763B2 (en) * 2006-03-23 2013-11-26 Cabot Microelectronics Corporation Halide anions for metal removal rate control
US8425797B2 (en) * 2008-03-21 2013-04-23 Cabot Microelectronics Corporation Compositions for polishing aluminum/copper and titanium in damascene structures
US8226840B2 (en) * 2008-05-02 2012-07-24 Micron Technology, Inc. Methods of removing silicon dioxide
US20100096584A1 (en) * 2008-10-22 2010-04-22 Fujimi Corporation Polishing Composition and Polishing Method Using the Same
US10858544B2 (en) * 2018-05-24 2020-12-08 Taiwan Semiconductor Manufacturing Company Ltd. Chemical mechanical polishing slurry and chemical mechanical polishing process using the same
EP3926663A4 (en) * 2019-02-13 2022-12-21 Tokuyama Corporation SEMICONDUCTOR WAFER TREATMENT LIQUID WITH HYPOCHLORITIONS AND PH BUFFER
CN110052909B (zh) * 2019-03-25 2020-08-04 东阳市恒业钢带有限公司 一种钢带无尘环保型抛光装置
CN114180831B (zh) * 2021-12-29 2024-04-02 中国建筑材料科学研究总院有限公司 一种可光刻玻璃及其微结构加工方法

Citations (2)

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CN1371528A (zh) * 1999-08-17 2002-09-25 日立化成工业株式会社 化学机械研磨用研磨剂及基板的研磨法

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US6614529B1 (en) 1992-12-28 2003-09-02 Applied Materials, Inc. In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization
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US5433651A (en) 1993-12-22 1995-07-18 International Business Machines Corporation In-situ endpoint detection and process monitoring method and apparatus for chemical-mechanical polishing
JP3270282B2 (ja) 1994-02-21 2002-04-02 株式会社東芝 半導体製造装置及び半導体装置の製造方法
JP3313505B2 (ja) 1994-04-14 2002-08-12 株式会社日立製作所 研磨加工法
US5893796A (en) 1995-03-28 1999-04-13 Applied Materials, Inc. Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus
US5964643A (en) 1995-03-28 1999-10-12 Applied Materials, Inc. Apparatus and method for in-situ monitoring of chemical mechanical polishing operations
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US5958288A (en) * 1996-11-26 1999-09-28 Cabot Corporation Composition and slurry useful for metal CMP
US6294027B1 (en) 1997-10-21 2001-09-25 Lam Research Corporation Methods and apparatus for cleaning semiconductor substrates after polishing of copper film
US6435947B2 (en) 1998-05-26 2002-08-20 Cabot Microelectronics Corporation CMP polishing pad including a solid catalyst
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TW501197B (en) * 1999-08-17 2002-09-01 Hitachi Chemical Co Ltd Polishing compound for chemical mechanical polishing and method for polishing substrate
JP4264781B2 (ja) 1999-09-20 2009-05-20 株式会社フジミインコーポレーテッド 研磨用組成物および研磨方法
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US6719920B2 (en) 2001-11-30 2004-04-13 Intel Corporation Slurry for polishing a barrier layer
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US7316603B2 (en) * 2002-01-22 2008-01-08 Cabot Microelectronics Corporation Compositions and methods for tantalum CMP
US20030168627A1 (en) * 2002-02-22 2003-09-11 Singh Rajiv K. Slurry and method for chemical mechanical polishing of metal structures including refractory metal based barrier layers
US6821309B2 (en) * 2002-02-22 2004-11-23 University Of Florida Chemical-mechanical polishing slurry for polishing of copper or silver films
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CN1371528A (zh) * 1999-08-17 2002-09-25 日立化成工业株式会社 化学机械研磨用研磨剂及基板的研磨法
WO2002033014A1 (en) * 2000-10-17 2002-04-25 Cabot Microelectronics Corporation Method of polishing a memory or rigid disk with an ammonia and/or halide-containing composition

Also Published As

Publication number Publication date
WO2007111855A2 (en) 2007-10-04
EP1996664A2 (en) 2008-12-03
MY145564A (en) 2012-02-29
JP2009530853A (ja) 2009-08-27
TW200804548A (en) 2008-01-16
US20070224822A1 (en) 2007-09-27
TWI343406B (en) 2011-06-11
EP1996664B1 (en) 2012-12-05
KR20080108562A (ko) 2008-12-15
JP5313866B2 (ja) 2013-10-09
KR101364318B1 (ko) 2014-02-18
US7820067B2 (en) 2010-10-26
CN101389724A (zh) 2009-03-18
WO2007111855A3 (en) 2007-11-15
IL192550A0 (en) 2009-02-11

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Granted publication date: 20120523

Termination date: 20190316