JP5313328B2 - 気密シールパーケージ用のゲッタ前駆体 - Google Patents
気密シールパーケージ用のゲッタ前駆体 Download PDFInfo
- Publication number
- JP5313328B2 JP5313328B2 JP2011500763A JP2011500763A JP5313328B2 JP 5313328 B2 JP5313328 B2 JP 5313328B2 JP 2011500763 A JP2011500763 A JP 2011500763A JP 2011500763 A JP2011500763 A JP 2011500763A JP 5313328 B2 JP5313328 B2 JP 5313328B2
- Authority
- JP
- Japan
- Prior art keywords
- getter
- package
- getter precursor
- substrate
- precursor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000002243 precursor Substances 0.000 title claims description 58
- -1 alkali metal cation Chemical class 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 19
- 229910052784 alkaline earth metal Inorganic materials 0.000 claims description 10
- 229910052783 alkali metal Inorganic materials 0.000 claims description 9
- 150000001450 anions Chemical group 0.000 claims description 9
- 239000011248 coating agent Substances 0.000 claims description 9
- 238000000576 coating method Methods 0.000 claims description 9
- 150000004678 hydrides Chemical class 0.000 claims description 9
- 230000001590 oxidative effect Effects 0.000 claims description 9
- UUXFWHMUNNXFHD-UHFFFAOYSA-N barium azide Chemical group [Ba+2].[N-]=[N+]=[N-].[N-]=[N+]=[N-] UUXFWHMUNNXFHD-UHFFFAOYSA-N 0.000 claims description 8
- 150000001540 azides Chemical class 0.000 claims description 7
- 230000005693 optoelectronics Effects 0.000 claims description 6
- 239000007864 aqueous solution Substances 0.000 claims description 5
- 239000000243 solution Substances 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 4
- 238000007789 sealing Methods 0.000 claims description 4
- 230000005855 radiation Effects 0.000 claims description 3
- 125000002524 organometallic group Chemical group 0.000 claims description 2
- 239000000758 substrate Substances 0.000 description 52
- 239000000463 material Substances 0.000 description 47
- 239000010410 layer Substances 0.000 description 26
- 229910052751 metal Inorganic materials 0.000 description 26
- 239000002184 metal Substances 0.000 description 26
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 19
- 229910052760 oxygen Inorganic materials 0.000 description 19
- 239000001301 oxygen Substances 0.000 description 19
- 239000010408 film Substances 0.000 description 14
- 230000004888 barrier function Effects 0.000 description 13
- 230000001681 protective effect Effects 0.000 description 12
- 239000011521 glass Substances 0.000 description 10
- 239000000203 mixture Substances 0.000 description 9
- 239000000565 sealant Substances 0.000 description 8
- 239000002585 base Substances 0.000 description 7
- 238000000151 deposition Methods 0.000 description 7
- 239000004033 plastic Substances 0.000 description 7
- 229920003023 plastic Polymers 0.000 description 7
- 230000004913 activation Effects 0.000 description 6
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 6
- 239000000376 reactant Substances 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 5
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 5
- 239000000853 adhesive Substances 0.000 description 5
- 230000001070 adhesive effect Effects 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 239000011888 foil Substances 0.000 description 5
- 150000002739 metals Chemical class 0.000 description 5
- 239000011368 organic material Substances 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 239000004593 Epoxy Substances 0.000 description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 4
- 150000001342 alkaline earth metals Chemical class 0.000 description 4
- 239000011575 calcium Substances 0.000 description 4
- 150000001768 cations Chemical group 0.000 description 4
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 4
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 238000004806 packaging method and process Methods 0.000 description 4
- 230000006798 recombination Effects 0.000 description 4
- 238000005215 recombination Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 229910000077 silane Inorganic materials 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 238000005979 thermal decomposition reaction Methods 0.000 description 4
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 3
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 3
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 3
- 239000005977 Ethylene Substances 0.000 description 3
- 239000002202 Polyethylene glycol Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 150000001340 alkali metals Chemical class 0.000 description 3
- 239000010405 anode material Substances 0.000 description 3
- 239000012298 atmosphere Substances 0.000 description 3
- 229910052788 barium Inorganic materials 0.000 description 3
- 229910052791 calcium Inorganic materials 0.000 description 3
- 239000010406 cathode material Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000000295 complement effect Effects 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 229920001577 copolymer Polymers 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 229910001873 dinitrogen Inorganic materials 0.000 description 3
- 229910010272 inorganic material Inorganic materials 0.000 description 3
- 239000011147 inorganic material Substances 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 229960003574 milrinone Drugs 0.000 description 3
- VWUPWEAFIOQCGF-UHFFFAOYSA-N milrinone lactate Chemical compound [H+].CC(O)C([O-])=O.N1C(=O)C(C#N)=CC(C=2C=CN=CC=2)=C1C VWUPWEAFIOQCGF-UHFFFAOYSA-N 0.000 description 3
- 239000012044 organic layer Substances 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 229920001223 polyethylene glycol Polymers 0.000 description 3
- 229920001296 polysiloxane Polymers 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 238000000197 pyrolysis Methods 0.000 description 3
- 150000003839 salts Chemical class 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- 239000004695 Polyether sulfone Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- PXIPVTKHYLBLMZ-UHFFFAOYSA-N Sodium azide Chemical compound [Na+].[N-]=[N+]=[N-] PXIPVTKHYLBLMZ-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 239000002274 desiccant Substances 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- UQEAIHBTYFGYIE-UHFFFAOYSA-N hexamethyldisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)C UQEAIHBTYFGYIE-UHFFFAOYSA-N 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 2
- 229910003480 inorganic solid Inorganic materials 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 239000002808 molecular sieve Substances 0.000 description 2
- 150000002902 organometallic compounds Chemical class 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 229920006393 polyether sulfone Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 239000000741 silica gel Substances 0.000 description 2
- 229910002027 silica gel Inorganic materials 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- URGAHOPLAPQHLN-UHFFFAOYSA-N sodium aluminosilicate Chemical compound [Na+].[Al+3].[O-][Si]([O-])=O.[O-][Si]([O-])=O URGAHOPLAPQHLN-UHFFFAOYSA-N 0.000 description 2
- 229910000104 sodium hydride Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910052712 strontium Inorganic materials 0.000 description 2
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 2
- 229920001187 thermosetting polymer Polymers 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 239000008096 xylene Substances 0.000 description 2
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 description 1
- WJQZZLQMLJPKQH-UHFFFAOYSA-N 2,4-dichloro-6-methylphenol Chemical compound CC1=CC(Cl)=CC(Cl)=C1O WJQZZLQMLJPKQH-UHFFFAOYSA-N 0.000 description 1
- 229920002799 BoPET Polymers 0.000 description 1
- YMCGCHJXICQXFB-UHFFFAOYSA-N C(C)(C)C=1C(=C(C(C1)(C(C)C)[Ba]C1(C(=C(C(=C1)C(C)C)C(C)C)C(C)C)C(C)C)C(C)C)C(C)C Chemical compound C(C)(C)C=1C(=C(C(C1)(C(C)C)[Ba]C1(C(=C(C(=C1)C(C)C)C(C)C)C(C)C)C(C)C)C(C)C)C(C)C YMCGCHJXICQXFB-UHFFFAOYSA-N 0.000 description 1
- BZQITBQLNVGCLM-UHFFFAOYSA-N C(C)(C)C=1C(=C(C(C=1)(C(C)C)[Ca]C1(C(=C(C(=C1)C(C)C)C(C)C)C(C)C)C(C)C)C(C)C)C(C)C Chemical compound C(C)(C)C=1C(=C(C(C=1)(C(C)C)[Ca]C1(C(=C(C(=C1)C(C)C)C(C)C)C(C)C)C(C)C)C(C)C)C(C)C BZQITBQLNVGCLM-UHFFFAOYSA-N 0.000 description 1
- WIXKSZGAQSSLBP-UHFFFAOYSA-N C1C2=CC=CC=C2C2=C1C([Ba]C=1C=CC=C3C4=CC=CC=C4CC=13)=CC=C2 Chemical compound C1C2=CC=CC=C2C2=C1C([Ba]C=1C=CC=C3C4=CC=CC=C4CC=13)=CC=C2 WIXKSZGAQSSLBP-UHFFFAOYSA-N 0.000 description 1
- XHQKJGGEOSNVPH-UHFFFAOYSA-N C1C2=CC=CC=C2C2=C1C([Ca]C=1C=CC=C3C4=CC=CC=C4CC=13)=CC=C2 Chemical compound C1C2=CC=CC=C2C2=C1C([Ca]C=1C=CC=C3C4=CC=CC=C4CC=13)=CC=C2 XHQKJGGEOSNVPH-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 229910001374 Invar Inorganic materials 0.000 description 1
- 229910010082 LiAlH Inorganic materials 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 239000005041 Mylar™ Substances 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- 239000004697 Polyetherimide Substances 0.000 description 1
- 229920002873 Polyethylenimine Polymers 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000004820 Pressure-sensitive adhesive Substances 0.000 description 1
- GOOHAUXETOMSMM-UHFFFAOYSA-N Propylene oxide Chemical compound CC1CO1 GOOHAUXETOMSMM-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- KEAYESYHFKHZAL-UHFFFAOYSA-N Sodium Chemical compound [Na] KEAYESYHFKHZAL-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229920004738 ULTEM® Polymers 0.000 description 1
- 229920001646 UPILEX Polymers 0.000 description 1
- 239000005083 Zinc sulfide Substances 0.000 description 1
- GENZLHCFIPDZNJ-UHFFFAOYSA-N [In+3].[O-2].[Mg+2] Chemical compound [In+3].[O-2].[Mg+2] GENZLHCFIPDZNJ-UHFFFAOYSA-N 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 239000011149 active material Substances 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 150000001299 aldehydes Chemical class 0.000 description 1
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- 125000001931 aliphatic group Chemical group 0.000 description 1
- 229910000287 alkaline earth metal oxide Inorganic materials 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 150000001345 alkine derivatives Chemical class 0.000 description 1
- 125000002947 alkylene group Chemical group 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 125000000129 anionic group Chemical group 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- UETLMBWMVIQIGU-UHFFFAOYSA-N calcium azide Chemical compound [Ca+2].[N-]=[N+]=[N-].[N-]=[N+]=[N-] UETLMBWMVIQIGU-UHFFFAOYSA-N 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 238000005524 ceramic coating Methods 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 239000004927 clay Substances 0.000 description 1
- 239000008199 coating composition Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 125000003983 fluorenyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3CC12)* 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910000833 kovar Inorganic materials 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 239000012280 lithium aluminium hydride Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 229910012375 magnesium hydride Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 229910052976 metal sulfide Inorganic materials 0.000 description 1
- 239000010445 mica Substances 0.000 description 1
- 229910052618 mica group Inorganic materials 0.000 description 1
- USPVIMZDBBWXGM-UHFFFAOYSA-N nickel;oxotungsten Chemical compound [Ni].[W]=O USPVIMZDBBWXGM-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- HMMGMWAXVFQUOA-UHFFFAOYSA-N octamethylcyclotetrasiloxane Chemical compound C[Si]1(C)O[Si](C)(C)O[Si](C)(C)O[Si](C)(C)O1 HMMGMWAXVFQUOA-UHFFFAOYSA-N 0.000 description 1
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical class OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920001601 polyetherimide Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- NTTOTNSKUYCDAV-UHFFFAOYSA-N potassium hydride Chemical compound [KH] NTTOTNSKUYCDAV-UHFFFAOYSA-N 0.000 description 1
- 229910000105 potassium hydride Inorganic materials 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000002516 radical scavenger Substances 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 150000003346 selenoethers Chemical class 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000012279 sodium borohydride Substances 0.000 description 1
- 229910000033 sodium borohydride Inorganic materials 0.000 description 1
- 239000012312 sodium hydride Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- PDEROVFZLWBVSG-UHFFFAOYSA-N strontium;diazide Chemical compound [Sr+2].[N-]=[N+]=[N-].[N-]=[N+]=[N-] PDEROVFZLWBVSG-UHFFFAOYSA-N 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 150000003467 sulfuric acid derivatives Chemical class 0.000 description 1
- 239000012815 thermoplastic material Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 239000011573 trace mineral Substances 0.000 description 1
- 235000013619 trace mineral Nutrition 0.000 description 1
- 238000001429 visible spectrum Methods 0.000 description 1
- 229920003169 water-soluble polymer Polymers 0.000 description 1
- 150000003738 xylenes Chemical class 0.000 description 1
- 239000010457 zeolite Substances 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
- H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
- H01L23/26—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device including materials for absorbing or reacting with moisture or other undesired substances, e.g. getters
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/02—Details
- H05B33/04—Sealing arrangements, e.g. against humidity
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/842—Containers
- H10K50/8426—Peripheral sealing arrangements, e.g. adhesives, sealants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/846—Passivation; Containers; Encapsulations comprising getter material or desiccants
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12044—OLED
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electroluminescent Light Sources (AREA)
Description
2Ba + O2 → 2BaO
BaO + H2O → Ba(OH)2
Ba(OH)2 + 8H2O → Ba(OH)2・8H2O
陰イオン部分は、水素化物、有機金属化合物、アジ化物及び窒化物などの窒素含有種、その誘導体などの非酸化物質から形成される。一例として、ゲッタ前駆体は第IA族又は第IIa族の金属アジ化物であってもよい。アジ化物系ゲッタ前駆体は、加熱されると窒素ガス及び対応する金属を形成する。アジ化物前駆体としては、アジ化バリウム(BaN6)、アジ化カルシウム(CaN6)、アジ化ストロンチウム(SrN6)、アジ化ナトリウム(NaN3)などがあるが、それらに限定されない。種々の金属アジ化物の熱分解温度は、一般に約110℃〜約360℃の範囲である。本発明に適用される場合、200℃未満の熱分解温度を有するアジ化物が選択される。
12 アノード
14 カソード
16 有機発光層
18 ベース基板
20 障壁膜
22 内部領域
24 シーラント
26 保護基板/層
28 ゲッタ前駆体
Claims (10)
- パッケージを気密シールする方法であって、
パッケージの壁面を画成する内側に、アルカリ金属陽イオン又はアルカリ土類金属陽イオンと非酸化性陰イオン部分とを含むゲッタ前駆体を塗工する工程と、
ゲッタ前駆体を熱分解し且つアルカリ金属陽イオン又はアルカリ土類金属陽イオンを還元するのに有効な温度までゲッタ前駆体を加熱する工程と
を含む方法。 - 加熱前に又は加熱と同時にゲッタ前駆体を放射線に暴露することをさらに含む、請求項1記載の方法。
- 前記非酸化性陰イオン部分が有機金属基である、請求項1記載の方法。
- 前記非酸化性陰イオン部分がアジ化物である、請求項1記載の方法。
- 前記非酸化性陰イオン部分が水素化物である、請求項1記載の方法。
- ゲッタ前駆体の溶液を塗工する工程が、大気中で皮膜を塗工することを含む、請求項1記載の方法。
- 前記溶液が水溶液である、請求項6記載の方法。
- ゲッタ前駆体を熱分解するのに有効な温度が200℃未満である、請求項1記載の方法。
- 前記パッケージが、パッケージの内部に配設された光電子デバイスをさらに備えており、光電子デバイスが、パッケージの壁面を画成する内側を含む外面を有する、請求項13記載の方法。
- 前記ゲッタ前駆体がアジ化バリウムである、請求項1記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/053,772 US7534635B1 (en) | 2008-03-24 | 2008-03-24 | Getter precursors for hermetically sealed packaging |
US12/053,772 | 2008-03-24 | ||
PCT/US2008/088533 WO2009120250A1 (en) | 2008-03-24 | 2008-12-30 | Getter precursors for hermetically sealed packaging |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2011515850A JP2011515850A (ja) | 2011-05-19 |
JP2011515850A5 JP2011515850A5 (ja) | 2012-02-09 |
JP5313328B2 true JP5313328B2 (ja) | 2013-10-09 |
Family
ID=40466869
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011500763A Expired - Fee Related JP5313328B2 (ja) | 2008-03-24 | 2008-12-30 | 気密シールパーケージ用のゲッタ前駆体 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7534635B1 (ja) |
EP (1) | EP2269217B1 (ja) |
JP (1) | JP5313328B2 (ja) |
KR (1) | KR101579333B1 (ja) |
CN (1) | CN102099908B (ja) |
WO (1) | WO2009120250A1 (ja) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
ITMI20070301A1 (it) * | 2007-02-16 | 2008-08-17 | Getters Spa | Supporti comprendenti materiali getter e sorgenti di metalli alcalini o alcalino-terrosi per sistemi di termoregolazione basati su effetto tunnel |
US10008637B2 (en) | 2011-12-06 | 2018-06-26 | Cree, Inc. | Light emitter devices and methods with reduced dimensions and improved light output |
KR101697803B1 (ko) * | 2009-06-01 | 2017-01-18 | 스미또모 가가꾸 가부시키가이샤 | 전자 장치들에 대한 봉지 공정 및 구조 |
US20110025196A1 (en) * | 2009-07-31 | 2011-02-03 | General Electric Company | Hermetic package with getter materials |
CN101872846B (zh) * | 2010-06-03 | 2012-11-07 | 昆山维信诺显示技术有限公司 | 一种金属基底干燥片及其制备方法 |
JP5480032B2 (ja) * | 2010-06-22 | 2014-04-23 | 株式会社Adeka | 金属化合物、薄膜形成用原料及びシクロペンタジエン化合物 |
KR101814769B1 (ko) * | 2010-07-07 | 2018-01-04 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 이의 제조 방법 |
KR101772661B1 (ko) * | 2010-11-29 | 2017-09-13 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
US10211380B2 (en) | 2011-07-21 | 2019-02-19 | Cree, Inc. | Light emitting devices and components having improved chemical resistance and related methods |
US10686107B2 (en) | 2011-07-21 | 2020-06-16 | Cree, Inc. | Light emitter devices and components with improved chemical resistance and related methods |
KR20140038553A (ko) * | 2011-07-21 | 2014-03-28 | 크리,인코포레이티드 | 향상된 화학적 내성을 위한 발광 장치 패키지들, 부품들 및 방법들 그리고 관련된 방법들 |
US9496466B2 (en) | 2011-12-06 | 2016-11-15 | Cree, Inc. | Light emitter devices and methods, utilizing light emitting diodes (LEDs), for improved light extraction |
US9240530B2 (en) | 2012-02-13 | 2016-01-19 | Cree, Inc. | Light emitter devices having improved chemical and physical resistance and related methods |
US9343441B2 (en) | 2012-02-13 | 2016-05-17 | Cree, Inc. | Light emitter devices having improved light output and related methods |
US9269914B2 (en) * | 2013-08-01 | 2016-02-23 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device, electronic device, and lighting device |
CN106410027B (zh) * | 2013-09-24 | 2019-11-05 | 京东方科技集团股份有限公司 | 柔性显示基板及其制备方法、柔性显示装置 |
CN108346746B (zh) * | 2017-01-22 | 2019-10-25 | 昆山工研院新型平板显示技术中心有限公司 | 有机电致发光器件及其制造方法、显示装置 |
CN109037085A (zh) * | 2018-08-01 | 2018-12-18 | 苏州福莱威封装技术有限公司 | 封装方法和封装结构 |
FR3088319B1 (fr) * | 2018-11-08 | 2020-10-30 | Ulis | Boitier hermetique comportant un getter, composant optoelectronique ou dispositif mems integrant un tel boitier hermetique et procede de fabrication associe |
Family Cites Families (40)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL6804720A (ja) * | 1968-04-04 | 1969-10-07 | ||
JPS60202184A (ja) * | 1984-03-26 | 1985-10-12 | Futaba Corp | 表示装置及びその製造方法 |
DE3518323A1 (de) | 1985-05-22 | 1986-11-27 | SEVAR Entsorgungsanlagen GmbH, 8590 Marktredwitz | Verfahren und vorrichtung zum trocknen von klaerschlamm |
US5151629A (en) | 1991-08-01 | 1992-09-29 | Eastman Kodak Company | Blue emitting internal junction organic electroluminescent device (I) |
US5150006A (en) | 1991-08-01 | 1992-09-22 | Eastman Kodak Company | Blue emitting internal junction organic electroluminescent device (II) |
US5141671A (en) | 1991-08-01 | 1992-08-25 | Eastman Kodak Company | Mixed ligand 8-quinolinolato aluminum chelate luminophors |
US5294870A (en) | 1991-12-30 | 1994-03-15 | Eastman Kodak Company | Organic electroluminescent multicolor image display device |
DE69305262T2 (de) | 1992-07-13 | 1997-04-30 | Eastman Kodak Co | Einen inneren Übergang aufweisende organisch elektrolumineszierende Vorrichtung mit einer neuen Zusammensetzung |
US5405709A (en) | 1993-09-13 | 1995-04-11 | Eastman Kodak Company | White light emitting internal junction organic electroluminescent device |
US5593788A (en) | 1996-04-25 | 1997-01-14 | Eastman Kodak Company | Organic electroluminescent devices with high operational stability |
JPH09148066A (ja) * | 1995-11-24 | 1997-06-06 | Pioneer Electron Corp | 有機el素子 |
US5683823A (en) | 1996-01-26 | 1997-11-04 | Eastman Kodak Company | White light-emitting organic electroluminescent devices |
US5645948A (en) | 1996-08-20 | 1997-07-08 | Eastman Kodak Company | Blue organic electroluminescent devices |
CN1085616C (zh) * | 1996-11-25 | 2002-05-29 | 袁壁疆 | 叠氮化钡的生产方法 |
DE69739403D1 (de) * | 1996-12-12 | 2009-06-25 | Canon Kk | Lokale energieaktivation eines getters |
JPH10275679A (ja) * | 1997-03-31 | 1998-10-13 | Toyota Central Res & Dev Lab Inc | 有機el素子 |
US5935720A (en) | 1997-04-07 | 1999-08-10 | Eastman Kodak Company | Red organic electroluminescent devices |
US5928802A (en) | 1997-05-16 | 1999-07-27 | Eastman Kodak Company | Efficient blue organic electroluminescent devices |
US5755999A (en) | 1997-05-16 | 1998-05-26 | Eastman Kodak Company | Blue luminescent materials for organic electroluminescent devices |
JP2000003783A (ja) * | 1998-06-12 | 2000-01-07 | Tdk Corp | 有機el表示装置 |
US6020078A (en) | 1998-12-18 | 2000-02-01 | Eastman Kodak Company | Green organic electroluminescent devices |
JP2000195660A (ja) * | 1998-12-25 | 2000-07-14 | Tdk Corp | 有機el素子 |
JP2000208252A (ja) * | 1999-01-14 | 2000-07-28 | Tdk Corp | 有機el素子 |
DE60029088T2 (de) * | 1999-11-11 | 2007-02-01 | Koninklijke Philips Electronics N.V. | Hochdruck-gasentladungslampe |
US6226890B1 (en) | 2000-04-07 | 2001-05-08 | Eastman Kodak Company | Desiccation of moisture-sensitive electronic devices |
US7074640B2 (en) * | 2000-06-06 | 2006-07-11 | Simon Fraser University | Method of making barrier layers |
US6465953B1 (en) | 2000-06-12 | 2002-10-15 | General Electric Company | Plastic substrates with improved barrier properties for devices sensitive to water and/or oxygen, such as organic electroluminescent devices |
IT1318936B1 (it) | 2000-09-27 | 2003-09-19 | Getters Spa | Dispositivo assorbitore di umidita' per schermi comprendenti diodiorganici emettitori di luce e processo per la sua produzione. |
US6888307B2 (en) | 2001-08-21 | 2005-05-03 | Universal Display Corporation | Patterned oxygen and moisture absorber for organic optoelectronic device structures |
US6770502B2 (en) | 2002-04-04 | 2004-08-03 | Eastman Kodak Company | Method of manufacturing a top-emitting OLED display device with desiccant structures |
JP4376774B2 (ja) | 2002-05-10 | 2009-12-02 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | エレクトロルミネセントパネル |
TW200507924A (en) | 2003-02-17 | 2005-03-01 | Getters Spa | Composition and devices for gas sorption and process for their manufacturing |
JP2005011552A (ja) * | 2003-06-17 | 2005-01-13 | Toppan Printing Co Ltd | 有機エレクトロルミネセンス素子 |
US7553355B2 (en) * | 2003-06-23 | 2009-06-30 | Matheson Tri-Gas | Methods and materials for the reduction and control of moisture and oxygen in OLED devices |
KR100544131B1 (ko) * | 2003-09-03 | 2006-01-23 | 삼성에스디아이 주식회사 | 유기 전계 발광 소자 및 그 제조방법 |
TWI257269B (en) * | 2004-05-04 | 2006-06-21 | Byoung-Chul Lee | Film-type getter and producing method thereof |
US20060060086A1 (en) * | 2004-09-21 | 2006-03-23 | Eastman Kodak Company | Desiccant having a reactive salt |
EP1657747A1 (en) * | 2004-11-11 | 2006-05-17 | Süd-Chemie Ag | Method of manufacturing highly moisture-sensitive electronic device elements |
ITMI20051502A1 (it) * | 2005-07-29 | 2007-01-30 | Getters Spa | Sistemi getter comprendenti uno o piu' depositi di materiale getter ed uno strato di materiale per il trasporto di h02o |
US20070075628A1 (en) | 2005-10-04 | 2007-04-05 | General Electric Company | Organic light emitting devices having latent activated layers |
-
2008
- 2008-03-24 US US12/053,772 patent/US7534635B1/en not_active Expired - Fee Related
- 2008-12-30 KR KR1020107020526A patent/KR101579333B1/ko not_active IP Right Cessation
- 2008-12-30 CN CN2008801283265A patent/CN102099908B/zh not_active Expired - Fee Related
- 2008-12-30 JP JP2011500763A patent/JP5313328B2/ja not_active Expired - Fee Related
- 2008-12-30 WO PCT/US2008/088533 patent/WO2009120250A1/en active Application Filing
- 2008-12-30 EP EP08873541.0A patent/EP2269217B1/en active Active
Also Published As
Publication number | Publication date |
---|---|
KR20100126741A (ko) | 2010-12-02 |
EP2269217B1 (en) | 2015-03-11 |
EP2269217A1 (en) | 2011-01-05 |
KR101579333B1 (ko) | 2015-12-21 |
US7534635B1 (en) | 2009-05-19 |
JP2011515850A (ja) | 2011-05-19 |
CN102099908A (zh) | 2011-06-15 |
CN102099908B (zh) | 2013-08-21 |
WO2009120250A1 (en) | 2009-10-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5313328B2 (ja) | 気密シールパーケージ用のゲッタ前駆体 | |
US8405193B2 (en) | Organic electronic packages having hermetically sealed edges and methods of manufacturing such packages | |
US7816676B2 (en) | Hermetically sealed package and methods of making the same | |
EP2374173B1 (en) | Method for encapsulating environmentally sensitive devices | |
US8350470B2 (en) | Encapsulation structures of organic electroluminescence devices | |
US9219172B2 (en) | Optoelectronic component | |
JP5532557B2 (ja) | ガスバリア性シート、ガスバリア性シートの製造方法、封止体、及び有機elディスプレイ | |
JP5905543B2 (ja) | 有機コンポーネントと湿気反応材料を含むパッケージ層とを備える装置 | |
JP2014532271A (ja) | 有機エレクトロニクスデバイスの封止部、有機エレクトロニクスデバイス、および有機エレクトロニクスデバイスを製造する方法 | |
US7976908B2 (en) | High throughput processes and systems for barrier film deposition and/or encapsulation of optoelectronic devices | |
WO2010059043A1 (en) | Electronic device and method to manufacture an electronic device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20111213 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20111213 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20121210 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20130426 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20130604 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20130703 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
LAPS | Cancellation because of no payment of annual fees |