JP5312970B2 - 半導体ウエーハの分割方法 - Google Patents
半導体ウエーハの分割方法 Download PDFInfo
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- JP5312970B2 JP5312970B2 JP2009025546A JP2009025546A JP5312970B2 JP 5312970 B2 JP5312970 B2 JP 5312970B2 JP 2009025546 A JP2009025546 A JP 2009025546A JP 2009025546 A JP2009025546 A JP 2009025546A JP 5312970 B2 JP5312970 B2 JP 5312970B2
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- semiconductor wafer
- solder layer
- dividing
- cutting
- semiconductor
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- 239000004065 semiconductor Substances 0.000 title claims description 104
- 238000000034 method Methods 0.000 title claims description 42
- 229910000679 solder Inorganic materials 0.000 claims description 92
- 238000005520 cutting process Methods 0.000 claims description 61
- 239000000758 substrate Substances 0.000 claims description 15
- 238000003754 machining Methods 0.000 claims description 13
- 238000010438 heat treatment Methods 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 66
- 238000005476 soldering Methods 0.000 description 7
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000011218 segmentation Effects 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/27—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Die Bonding (AREA)
- Dicing (AREA)
Description
ダイシング装置では、ダイヤモンドやCBN(Cubic Boron Nitride)等の超砥粒を金属や樹脂でリング状に固めた切削ブレードを高速回転(例えば30000rpm)させつつ半導体ウエーハへ切り込ませることで、半導体ウエーハの一部を切削除去して分割を行う。
2 チップ(デバイス)
7 電極層
12 半田層
18 切削バイト
22 環状フレーム
24 ダイシングテープ
26 チャックテーブル
38 切削ブレード
40 加工溝
42 破断溝
60 分割装置
80 ピックアップ手段
84 基板(リードフレーム)
Claims (5)
- 表面に複数の分割予定ラインが格子状に形成され、該分割予定ラインによって区画された各領域にデバイスが形成され、且つ裏面に電極層及び該電極層上に形成された半田層を有する半導体ウエーハを分割する半導体ウエーハの分割方法であって、
半導体ウエーハの上面に対して平行に移動される切削刃で前記半田層を所定厚みに切削する切削工程と、
該切削工程を実施した後、半導体ウエーハの裏面に形成された該半田層にダイシングテープを貼着するテープ貼着工程と、
該テープ貼着工程を実施した後、半導体ウエーハの該分割予定ラインに沿って半導体ウエーハの表面に開口し、該半田層と該電極層との界面近傍に至る深さの加工溝を形成する加工溝形成工程と、
該加工溝が形成された半導体ウエーハに外力を付与して該分割予定ラインに沿って半導体ウエーハを個々の半導体チップへと分割する分割工程と、
を具備したことを特徴とする半導体ウエーハの分割方法。 - 前記加工溝形成工程では、切削ブレードを前記分割予定ラインに沿って半導体ウエーハを通して該半田層に薄く切り込ませることで前記加工溝を形成し、
前記分割工程では前記ダイシングテープを拡張することで半導体ウエーハ及び該半田層に外力を付与する請求項1記載の半導体ウエーハの分割方法。 - 該切削ブレードの前記半田層への切り込み深さは5〜10μmである請求項1又は2記載の半導体ウエーハの分割方法。
- 前記加工溝形成工程では、該半田層と該電極層との界面から5〜20μmの半導体ウエーハを残して切削ブレードで半導体ウエーハを切削して前記加工溝を形成し、
前記分割工程では前記ダイシングテープを拡張すると共に突き上げ部材で加工溝部分を下から突き上げて半導体ウエーハ及び該半田層に外力を付与する請求項1記載の半導体ウエーハの分割方法。 - 請求項1〜4の何れかの分割方法により得られた半導体チップを該ダイシングテープから剥離する剥離工程と、
該ダイシングテープから剥離した半導体チップを該半田層を介して基板に載置し、加熱して実装する実装工程と、
を具備したことを特徴とする半導体チップの実装方法。
Priority Applications (1)
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JP2009025546A JP5312970B2 (ja) | 2009-02-06 | 2009-02-06 | 半導体ウエーハの分割方法 |
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JP2010182901A JP2010182901A (ja) | 2010-08-19 |
JP5312970B2 true JP5312970B2 (ja) | 2013-10-09 |
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JP2009025546A Active JP5312970B2 (ja) | 2009-02-06 | 2009-02-06 | 半導体ウエーハの分割方法 |
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Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5780445B2 (ja) * | 2011-01-24 | 2015-09-16 | 株式会社東京精密 | 半導体ウエーハブレーキング装置及び方法 |
JP5882053B2 (ja) | 2011-12-28 | 2016-03-09 | 太陽誘電株式会社 | 弾性波デバイスの製造方法 |
JP6506606B2 (ja) * | 2015-04-27 | 2019-04-24 | 株式会社ディスコ | ウエーハの分割方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5719573B2 (ja) * | 1972-08-23 | 1982-04-23 | ||
JPS5864037A (ja) * | 1981-10-13 | 1983-04-16 | Nec Home Electronics Ltd | 半導体装置の製造方法 |
JPS5886743A (ja) * | 1981-11-18 | 1983-05-24 | Nec Home Electronics Ltd | 半導体装置の製造方法 |
JP3276506B2 (ja) * | 1994-03-16 | 2002-04-22 | 株式会社日立製作所 | 半導体装置の製造方法 |
JPH11163006A (ja) * | 1997-11-27 | 1999-06-18 | Hitachi Ltd | ペレットボンディング方法 |
JP2004040050A (ja) * | 2002-07-08 | 2004-02-05 | Toshiba Corp | 半導体装置の製造方法及び製造装置 |
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