JP5306797B2 - 部品内蔵配線基板の製造方法 - Google Patents
部品内蔵配線基板の製造方法 Download PDFInfo
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- JP5306797B2 JP5306797B2 JP2008332597A JP2008332597A JP5306797B2 JP 5306797 B2 JP5306797 B2 JP 5306797B2 JP 2008332597 A JP2008332597 A JP 2008332597A JP 2008332597 A JP2008332597 A JP 2008332597A JP 5306797 B2 JP5306797 B2 JP 5306797B2
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- 229920005989 resin Polymers 0.000 claims abstract description 275
- 239000011347 resin Substances 0.000 claims abstract description 275
- 239000004020 conductor Substances 0.000 claims abstract description 136
- 229910000679 solder Inorganic materials 0.000 claims abstract description 95
- 238000000034 method Methods 0.000 claims abstract description 65
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- 239000003990 capacitor Substances 0.000 description 92
- 239000003985 ceramic capacitor Substances 0.000 description 35
- 239000000919 ceramic Substances 0.000 description 32
- 239000000463 material Substances 0.000 description 32
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 29
- 239000010949 copper Substances 0.000 description 27
- 229910052802 copper Inorganic materials 0.000 description 26
- 239000003822 epoxy resin Substances 0.000 description 21
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- 229920001187 thermosetting polymer Polymers 0.000 description 12
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- 238000007788 roughening Methods 0.000 description 5
- 229910002113 barium titanate Inorganic materials 0.000 description 4
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 4
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- 229910045601 alloy Inorganic materials 0.000 description 3
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- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 230000008859 change Effects 0.000 description 3
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- 229910017944 Ag—Cu Inorganic materials 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 239000005388 borosilicate glass Substances 0.000 description 2
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- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 description 2
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- 229910052709 silver Inorganic materials 0.000 description 2
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- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 2
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- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical compound C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 description 1
- XQUPVDVFXZDTLT-UHFFFAOYSA-N 1-[4-[[4-(2,5-dioxopyrrol-1-yl)phenyl]methyl]phenyl]pyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C(C=C1)=CC=C1CC1=CC=C(N2C(C=CC2=O)=O)C=C1 XQUPVDVFXZDTLT-UHFFFAOYSA-N 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229920000459 Nitrile rubber Polymers 0.000 description 1
- 229910020220 Pb—Sn Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000006087 Silane Coupling Agent Substances 0.000 description 1
- 229910020836 Sn-Ag Inorganic materials 0.000 description 1
- 229910020935 Sn-Sb Inorganic materials 0.000 description 1
- 229910020994 Sn-Zn Inorganic materials 0.000 description 1
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- 229910008757 Sn—Sb Inorganic materials 0.000 description 1
- 229910009069 Sn—Zn Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
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- 238000004140 cleaning Methods 0.000 description 1
- 238000010344 co-firing Methods 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
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- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
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- 238000009499 grossing Methods 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 239000004816 latex Substances 0.000 description 1
- 229920000126 latex Polymers 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229920003192 poly(bis maleimide) Polymers 0.000 description 1
- 229920013636 polyphenyl ether polymer Polymers 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
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- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229920006305 unsaturated polyester Polymers 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/16237—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bonding area disposed in a recess of the surface of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/146—Mixed devices
- H01L2924/1461—MEMS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
Description
11…コア基板
12…第1主面
13…第2主面
14…第1主面側導体層
16…スルーホール導体
17…充填樹脂
21…半導体集積回路素子としてのICチップ
31…配線積層部としての第1ビルドアップ層
32…配線積層部としての第2ビルドアップ層
33,34,35,36…樹脂絶縁層
41,42…導体層
44…導体層としての端子パッド
45…はんだバンプ
48…導体層としてのパッド
90…収容穴部
91…収容穴部の内壁面
92…樹脂層
101…部品としてのセラミックコンデンサ
102…第1部品主面としての第1コンデンサ主面
103…第2部品主面としての第2コンデンサ主面
106…部品側面としてのコンデンサ側面
191…貫通孔
S1…コア基板準備工程
S2…部品準備工程としてのコンデンサ準備工程
S3…収容工程
S4…樹脂層形成工程
S5…固定工程
S6…高さ合わせ工程
S8…配線積層部形成工程
S8−1…絶縁層貼付工程
S8−2…導体形成工程
S8−3…穴埋め工程
S8−4…加熱工程
S9…はんだバンプ形成工程
Claims (5)
- 第1主面及び第2主面を有し、少なくとも前記第1主面にて開口する収容穴部を有するコア基板を準備するコア基板準備工程と、
第1部品主面、第2部品主面及び部品側面を有する部品を準備する部品準備工程と、
前記コア基板準備工程及び前記部品準備工程後、前記第2主面と前記第2部品主面とを同じ側に向けた状態で、前記収容穴部内に前記部品を収容する収容工程と、
前記収容工程後、樹脂層で前記収容穴部の内壁面と前記部品側面との隙間を埋める樹脂層形成工程と、
前記樹脂層形成工程後、前記樹脂層を硬化させて前記部品を固定する固定工程と、
前記固定工程後、前記第1主面側及び前記第2主面側の少なくとも一方に、樹脂絶縁層及び導体層を積層した構造を有する配線積層部を形成する配線積層部形成工程と、
前記配線積層部形成工程後、最外層の樹脂絶縁層上に形成された導体層上に半導体集積回路素子搭載用のはんだバンプを形成するはんだバンプ形成工程と
を含む部品内蔵配線基板の製造方法において、
前記配線積層部形成工程は、
前記第1主面側及び前記第2主面側の少なくとも一方に、最内層の樹脂絶縁層を貼付する絶縁層貼付工程と、
前記絶縁層貼付工程後、前記最内層の樹脂絶縁層上に前記導体層を形成するとともに、前記コア基板及び前記最内層の樹脂絶縁層を貫通する貫通孔内に前記第1主面側及び前記第2主面側を電気的に接続するスルーホール導体を形成する導体形成工程と、
前記導体形成工程後、前記スルーホール導体の空洞部を充填樹脂で穴埋めする穴埋め工程とを含み、
前記固定工程後であって、前記配線積層部形成工程において前記最外層の樹脂絶縁層を積層する前、かつ前記穴埋め工程の直後に、はんだの融点と同程度の温度に加熱する加熱工程を行う
ことを特徴とする部品内蔵配線基板の製造方法。 - 前記固定工程後かつ前記配線積層部形成工程前に、前記樹脂層を薄くすることにより、前記樹脂層の表面を前記第1主面上に形成された第1主面側導体層の表面と同じ高さに合わせる高さ合わせ工程を行い、
前記加熱工程は、前記配線積層部形成工程において前記樹脂層の表面上に前記最内層の樹脂絶縁層を貼付した後で実行される
ことを特徴とする請求項1に記載の部品内蔵配線基板の製造方法。 - 前記高さ合わせ工程では、前記樹脂層の一部を機械的に除去することを特徴とする請求項2に記載の部品内蔵配線基板の製造方法。
- 前記加熱工程では、前記最外層の樹脂絶縁層が積層されていない状態にある部品内蔵配線基板を、リフロー炉内に配置して加熱することを特徴とする請求項1乃至3のいずれか1項に記載の部品内蔵配線基板の製造方法。
- 前記樹脂層形成工程において形成される前記樹脂層は、前記第1主面上及び前記第1部品主面上に形成される樹脂シートであり、
前記樹脂層形成工程では、前記樹脂シートの加熱、及び、前記コア基板及び前記部品に対する前記樹脂シートの押圧を行うことにより、前記樹脂シートの一部で前記収容穴部の内壁面と前記部品側面との隙間を埋める
ことを特徴とする請求項1乃至4のいずれか1項に記載の部品内蔵配線基板の製造方法。
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CN105321676A (zh) * | 2014-07-02 | 2016-02-10 | 三星电机株式会社 | 线圈单元及其制造方法、薄膜电感器及其制造方法 |
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JP2012186440A (ja) | 2011-02-18 | 2012-09-27 | Ibiden Co Ltd | インダクタ部品とその部品を内蔵しているプリント配線板及びインダクタ部品の製造方法 |
JP5539244B2 (ja) * | 2011-02-28 | 2014-07-02 | 日本特殊陶業株式会社 | キャパシタ内蔵光電気混載パッケージ |
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JP2662440B2 (ja) * | 1989-06-01 | 1997-10-15 | 田中貴金属工業株式会社 | プラインドスルホール多層基板の製造方法 |
JP4718889B2 (ja) * | 2005-04-28 | 2011-07-06 | 日本特殊陶業株式会社 | 多層配線基板及びその製造方法、多層配線基板構造体及びその製造方法 |
JP4880277B2 (ja) * | 2005-10-06 | 2012-02-22 | 日本特殊陶業株式会社 | 配線基板の製造方法 |
JP5188075B2 (ja) * | 2007-02-16 | 2013-04-24 | 住友ベークライト株式会社 | 回路基板の製造方法及び半導体製造装置 |
US7936567B2 (en) * | 2007-05-07 | 2011-05-03 | Ngk Spark Plug Co., Ltd. | Wiring board with built-in component and method for manufacturing the same |
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CN105321676A (zh) * | 2014-07-02 | 2016-02-10 | 三星电机株式会社 | 线圈单元及其制造方法、薄膜电感器及其制造方法 |
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