JP5292388B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP5292388B2
JP5292388B2 JP2010292753A JP2010292753A JP5292388B2 JP 5292388 B2 JP5292388 B2 JP 5292388B2 JP 2010292753 A JP2010292753 A JP 2010292753A JP 2010292753 A JP2010292753 A JP 2010292753A JP 5292388 B2 JP5292388 B2 JP 5292388B2
Authority
JP
Japan
Prior art keywords
field effect
mounting portion
chip mounting
effect transistor
power
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2010292753A
Other languages
English (en)
Japanese (ja)
Other versions
JP2011077550A (ja
JP2011077550A5 (enExample
Inventor
正樹 白石
貴之 岩崎
伸悌 松浦
友彰 宇野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Electronics Corp
Original Assignee
Renesas Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Priority to JP2010292753A priority Critical patent/JP5292388B2/ja
Publication of JP2011077550A publication Critical patent/JP2011077550A/ja
Publication of JP2011077550A5 publication Critical patent/JP2011077550A5/ja
Application granted granted Critical
Publication of JP5292388B2 publication Critical patent/JP5292388B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01023—Vanadium [V]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/30107—Inductance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

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  • Dc-Dc Converters (AREA)
JP2010292753A 2010-12-28 2010-12-28 半導体装置 Expired - Fee Related JP5292388B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2010292753A JP5292388B2 (ja) 2010-12-28 2010-12-28 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010292753A JP5292388B2 (ja) 2010-12-28 2010-12-28 半導体装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2007287203A Division JP4769784B2 (ja) 2007-11-05 2007-11-05 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2013088367A Division JP2013141035A (ja) 2013-04-19 2013-04-19 半導体装置

Publications (3)

Publication Number Publication Date
JP2011077550A JP2011077550A (ja) 2011-04-14
JP2011077550A5 JP2011077550A5 (enExample) 2012-01-19
JP5292388B2 true JP5292388B2 (ja) 2013-09-18

Family

ID=44021126

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010292753A Expired - Fee Related JP5292388B2 (ja) 2010-12-28 2010-12-28 半導体装置

Country Status (1)

Country Link
JP (1) JP5292388B2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013141035A (ja) * 2013-04-19 2013-07-18 Renesas Electronics Corp 半導体装置

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113366636B (zh) * 2019-03-22 2024-06-21 株式会社村田制作所 电路模块
CN117832177B (zh) * 2024-03-04 2024-05-28 深圳市沃芯半导体技术有限公司 开关电源模块封装系统及封装方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001291823A (ja) * 2000-04-05 2001-10-19 Toshiba Digital Media Engineering Corp 半導体装置
JP2001339041A (ja) * 2000-05-29 2001-12-07 Toshiba Digital Media Engineering Corp 半導体装置及び半導体装置の製造方法
JP3450803B2 (ja) * 2000-06-22 2003-09-29 株式会社東芝 樹脂封止型半導体装置
JP2002083927A (ja) * 2000-09-07 2002-03-22 Matsushita Electric Ind Co Ltd 半導体装置
JP2002299544A (ja) * 2001-03-30 2002-10-11 Matsushita Electric Ind Co Ltd 半導体装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013141035A (ja) * 2013-04-19 2013-07-18 Renesas Electronics Corp 半導体装置

Also Published As

Publication number Publication date
JP2011077550A (ja) 2011-04-14

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