JP5292080B2 - 静電チャックのクリーニング方法 - Google Patents
静電チャックのクリーニング方法 Download PDFInfo
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- JP5292080B2 JP5292080B2 JP2008313504A JP2008313504A JP5292080B2 JP 5292080 B2 JP5292080 B2 JP 5292080B2 JP 2008313504 A JP2008313504 A JP 2008313504A JP 2008313504 A JP2008313504 A JP 2008313504A JP 5292080 B2 JP5292080 B2 JP 5292080B2
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- chuck plate
- substrate
- chuck
- dummy substrate
- processed
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- 238000004140 cleaning Methods 0.000 title claims abstract description 29
- 238000000034 method Methods 0.000 title claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 80
- 239000000356 contaminant Substances 0.000 claims abstract description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 14
- 239000010703 silicon Substances 0.000 claims abstract description 14
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims abstract description 7
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 6
- 238000010438 heat treatment Methods 0.000 claims description 6
- 238000001816 cooling Methods 0.000 claims description 5
- 238000001020 plasma etching Methods 0.000 abstract description 5
- 239000007789 gas Substances 0.000 description 7
- 239000011247 coating layer Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- 238000012546 transfer Methods 0.000 description 4
- 238000001179 sorption measurement Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 230000000274 adsorptive effect Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
Images
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- Cleaning Or Drying Semiconductors (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Description
Claims (2)
- 電極を有するチャック本体と、チャック本体の表面を覆う誘電体から成るチャックプレートと、電極に電圧を印加することでチャックプレートの表面に吸着される被処理基板を加熱又は冷却する熱付与手段とを備える静電チャックのクリーニング方法であって、
チャックプレートの表面にダミー基板を吸着した状態で、熱付与手段によりダミー基板を加熱又は冷却し、ダミー基板とチャックプレートとの熱膨張差を生じさせることで、チャックプレートの表面に堆積した汚染物質をダミー基板が擦り取るクリーニング工程を有し、
ダミー基板のチャックプレートに対する接触面の硬度は、被処理基板の硬度よりも高く、チャックプレートの硬度よりも低いことを特徴とする静電チャックのクリーニング方法。 - 請求項1記載の静電チャックのクリーニング方法であって、前記チャックプレートは窒化アルミニウム製であり、前記被処理基板はシリコンウエハであるものにおいて、前記ダミー基板のチャックプレートに対する接触面は窒化シリコンで形成されていることを特徴とする静電チャックのクリーニング方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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JP2008313504A JP5292080B2 (ja) | 2008-12-09 | 2008-12-09 | 静電チャックのクリーニング方法 |
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JP2008313504A JP5292080B2 (ja) | 2008-12-09 | 2008-12-09 | 静電チャックのクリーニング方法 |
Publications (2)
Publication Number | Publication Date |
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JP2010140963A JP2010140963A (ja) | 2010-06-24 |
JP5292080B2 true JP5292080B2 (ja) | 2013-09-18 |
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JP2008313504A Active JP5292080B2 (ja) | 2008-12-09 | 2008-12-09 | 静電チャックのクリーニング方法 |
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JP (1) | JP5292080B2 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI593473B (zh) | 2015-10-28 | 2017-08-01 | 漢辰科技股份有限公司 | 清潔靜電吸盤的方法 |
JP2021118323A (ja) * | 2020-01-29 | 2021-08-10 | Hoya株式会社 | 静電チャッククリーナー及び静電チャックのクリーニング方法 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002280365A (ja) * | 2001-03-19 | 2002-09-27 | Applied Materials Inc | 静電チャックのクリーニング方法 |
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