JP5285777B2 - 3次元集積回路の製造方法及びプログラム - Google Patents
3次元集積回路の製造方法及びプログラム Download PDFInfo
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Description
102 スルー・シリコン・ビア
104 配線層
200 第1の能動回路層ウエハ
202 P+ウエハ
204 P−上部能動回路層
206 スルー・シリコン・ビア
208 配線レベル
300 第2の能動回路層ウエハ
302 P+ウエハ
304 P−上部能動回路層
306 スルー・シリコン・ビア
308 配線レベル
800 ベース・ウエハ
808 配線層
820 誘電体層
822 コンタクト金属
825 C4ハンダ・バンプ
910 設計プロセス
920 入力設計構造
930 ライブラリィ・エレメント
940 設計仕様
950 特性データ
960 検証データ
970 設計ルール
980 ネットリスト
985 テスト・データ・ファイル
990 設計構造
995 ステージ
Claims (11)
- 第1配線層及びスルー・シリコン・ビアを含むインターフェース・ウエハを準備するステップと、
能動回路及びスルー・シリコン・ビアを含むP−層により覆われているP+部分を有する第1の能動回路層ウエハを準備するステップと、
前記第1の能動回路層ウエハを前記インターフェース・ウエハにフェイス・ダウン・ボンディングするステップと、
前記第1の能動回路層ウエハを前記インターフェース・ウエハにフェイス・ダウン・ボンディングした後に、前記第1の能動回路層ウエハの前記P−層を残すように前記第1の能動回路層ウエハの前記P+部分を選択的に除去するステップと、
前記第1の能動回路層ウエハのP+部分を除去した後に、前記P−層の背面に第2配線層を形成するステップと、
能動回路を含むP−層により覆われているP+部分を有する第2の能動回路層ウエハを準備するステップと、
前記第2の能動回路層ウエハを前記第2配線層にフェイス・ダウン・ボンディングするステップと、
前記第2の能動回路層ウエハを前記第2配線層にフェイス・ダウン・ボンディングした後に、前記第2の能動回路層ウエハの前記P−層を残すように前記第2の能動回路層ウエハの前記P+部分を選択的に除去するステップと、
前記第2の能動回路層ウエハの前記P+部分を選択的に除去した後に、前記第2の能動回路層ウエハの前記P−層の背面に第3配線層を形成するステップと、
第4配線層を含むベース・ウエハを準備するステップと、
前記第3配線層を前記ベース・ウエハにフェイス・ダウン・ボンディングするステップと、
前記第3配線層を前記ベース・ウエハにフェイス・ダウン・ボンディングした後に、前記インターフェース・ウエハを薄くしてインターフェース層を形成し、そして前記インターフェース層上にハンダ・バンプを構成する金属を形成するステップであって、前記ハンダ・バンプは前記インターフェース層の前記スルー・シリコン・ビアを介して前記第1配線層に結合されている前記ステップとを含み、
前記インターフェース・ウエハは、前記第1の能動回路層ウエハの前記P−層を残すように前記第1の能動回路層ウエハの前記P+部分を選択的にエッチングする前記選択的に除去するステップにおいて使用されるエッチング剤に溶解しない材料で形成されている、3次元集積回路の製造方法。 - 能動回路を含むP−層により覆われているP+部分を有する第1の能動回路層ウエハを準備するステップと、
前記第1の能動回路層ウエハを、第1配線層を含むインターフェース・ウエハにフェイス・ダウン・ボンディングするステップと、
前記第1の能動回路層ウエハを前記インターフェース・ウエハにフェイス・ダウン・ボンディングした後に、前記第1の能動回路層ウエハの前記P−層を残すように前記第1の能動回路層ウエハの前記P+部分を選択的に除去するステップと、
前記第1の能動回路層ウエハのP+部分を選択的に除去した後に、前記P−層の背面に配線層を形成するステップとを含む、3次元集積回路の製造方法。 - 第2配線層を含むベース・ウエハを準備するステップと、
前記P−層の背面の配線層を前記ベース・ウエハにフェイス・ダウン・ボンディングするステップとを含む、請求項2に記載の方法。 - 前記P−層の背面の配線層を前記ベース・ウエハにフェイス・ダウン・ボンディングした後に、前記インターフェース・ウエハを薄くしてインターフェース層を形成し、そして前記インターフェース層上に金属を形成するステップであって、前記金属は前記インターフェース層のビアを介して前記第1配線層に結合されている前記ステップを含む、請求項3に記載の方法。
- 前記ベース・ウエハは論理回路を含む、請求項3に記載の方法。
- 前記インターフェース・ウエハは、前記第1の能動回路層ウエハの前記P−層を残すように前記第1の能動回路層ウエハの前記P+部分を選択的にエッチングする前記選択的に除去するステップにおいて使用されるエッチング剤に溶解しない材料で形成されている、請求項2に記載の方法。
- 前記第1の能動回路層ウエハは、スルー・シリコン・ビアを有する、請求項2に記載の方法。
- 能動回路を含むP−層により覆われているP+部分を有する他の能動回路層ウエハを準備するステップと、
前記他の能動回路層ウエハを、該他の能動回路層ウエハに先行して既に設けられている能動回路層ウエハのP−層の背面の配線層にフェイス・ダウン・ボンディングするステップと、
前記他の能動回路層ウエハを、前記既に設けられている能動回路層ウエハP−層の背面の配線層にフェイス・ダウン・ボンディングした後に、前記他の能動回路層ウエハの前記P−層を残すように前記他の能動回路層ウエハの前記P+部分を選択的に除去するステップと、
前記他の能動回路層ウエハの前記P+部分を選択的に除去した後に、前記他の能動回路層ウエハの前記P−層の背面に他の配線層を形成するステップとを含む、請求項2に記載の方法。 - 前記他の能動回路層ウエハを準備するステップと、
前記他の能動回路層ウエハを前記既に設けられている能動回路層ウエハP−層の背面上の配線層にフェイス・ダウン・ボンディングするステップと、
前記他の能動回路層ウエハの前記P+部分を選択的に除去するステップと、
前記他の能動回路層ウエハの前記P−層の背面に他の配線層を形成するステップとをN回繰り返すステップを含む、請求項8に記載の方法。 - 第2配線層を含むベース・ウエハを準備するステップと、
N番目の能動回路層ウエハのP−層の背面の配線層を前記ベース・ウエハにフェイス・ダウン・ボンディングするステップとを含む、請求項9に記載の方法。 - コンピュータに3次元集積回路構造を製造するためのプログラムであって、請求項2ないし10のいずれか1項に記載の各ステップをコンピュータに実行させるためのプログラム。
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TWI514513B (zh) | 2015-12-21 |
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EP2313923A1 (en) | 2011-04-27 |
WO2010022163A1 (en) | 2010-02-25 |
US8129256B2 (en) | 2012-03-06 |
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