JP5276758B2 - 液晶表示装置の作製方法 - Google Patents

液晶表示装置の作製方法 Download PDF

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Publication number
JP5276758B2
JP5276758B2 JP2001144035A JP2001144035A JP5276758B2 JP 5276758 B2 JP5276758 B2 JP 5276758B2 JP 2001144035 A JP2001144035 A JP 2001144035A JP 2001144035 A JP2001144035 A JP 2001144035A JP 5276758 B2 JP5276758 B2 JP 5276758B2
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Japan
Prior art keywords
conductive layer
film
region
forming
pattern
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Expired - Fee Related
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JP2001144035A
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English (en)
Japanese (ja)
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JP2002057163A5 (https=
JP2002057163A (ja
Inventor
一郎 上原
和宏 登嶋
舜平 山崎
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2001144035A priority Critical patent/JP5276758B2/ja
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Publication of JP2002057163A5 publication Critical patent/JP2002057163A5/ja
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  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Liquid Crystal (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Thin Film Transistor (AREA)
JP2001144035A 2000-05-13 2001-05-14 液晶表示装置の作製方法 Expired - Fee Related JP5276758B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001144035A JP5276758B2 (ja) 2000-05-13 2001-05-14 液晶表示装置の作製方法

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2000-180549 2000-05-13
JP2000180549 2000-05-13
JP2000180549 2000-05-13
JP2001144035A JP5276758B2 (ja) 2000-05-13 2001-05-14 液晶表示装置の作製方法

Publications (3)

Publication Number Publication Date
JP2002057163A JP2002057163A (ja) 2002-02-22
JP2002057163A5 JP2002057163A5 (https=) 2008-05-22
JP5276758B2 true JP5276758B2 (ja) 2013-08-28

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JP2001144035A Expired - Fee Related JP5276758B2 (ja) 2000-05-13 2001-05-14 液晶表示装置の作製方法

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JP (1) JP5276758B2 (https=)

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3009438B2 (ja) * 1989-08-14 2000-02-14 株式会社日立製作所 液晶表示装置
JP3168648B2 (ja) * 1991-11-27 2001-05-21 カシオ計算機株式会社 薄膜トランジスタパネルの製造方法
JPH05206086A (ja) * 1992-01-27 1993-08-13 Fujitsu Ltd 薄膜のエッチング方法
JPH06244155A (ja) * 1993-02-19 1994-09-02 Sumitomo Metal Ind Ltd 半導体装置のメタル配線パターン形成方法
JP2940781B2 (ja) * 1993-11-30 1999-08-25 三洋電機株式会社 薄膜トランジスタの製造方法
JP3238020B2 (ja) * 1994-09-16 2001-12-10 株式会社東芝 アクティブマトリクス表示装置の製造方法
JPH09197436A (ja) * 1996-01-23 1997-07-31 Toshiba Corp アクティブマトリクス基板
JPH09288347A (ja) * 1996-02-20 1997-11-04 Ricoh Co Ltd ダミーパターン付きレチクルおよびこのレチクルを用いて製造された半導体装置
JPH09274313A (ja) * 1996-04-03 1997-10-21 Toshiba Corp レジストパターンの形成方法
JP3574270B2 (ja) * 1996-04-17 2004-10-06 三菱電機株式会社 Ａｌテーパドライエッチング方法
JP3693199B2 (ja) * 1996-07-10 2005-09-07 Ｊｓｒ株式会社 感放射線性樹脂組成物
JPH1056179A (ja) * 1996-08-08 1998-02-24 Hoshiden Philips Display Kk 薄膜デバイスの製造方法
JP2000002892A (ja) * 1998-04-17 2000-01-07 Toshiba Corp 液晶表示装置、マトリクスアレイ基板およびその製造方法
JP3883706B2 (ja) * 1998-07-31 2007-02-21 シャープ株式会社 エッチング方法、及び薄膜トランジスタマトリックス基板の製造方法
JP2000089477A (ja) * 1998-09-11 2000-03-31 Nec Corp レジストパターンの形成方法
JP2001339072A (ja) * 2000-03-15 2001-12-07 Advanced Display Inc 液晶表示装置

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JP2002057163A (ja) 2002-02-22

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