JP5274275B2 - 加熱処理装置 - Google Patents

加熱処理装置 Download PDF

Info

Publication number
JP5274275B2
JP5274275B2 JP2009012401A JP2009012401A JP5274275B2 JP 5274275 B2 JP5274275 B2 JP 5274275B2 JP 2009012401 A JP2009012401 A JP 2009012401A JP 2009012401 A JP2009012401 A JP 2009012401A JP 5274275 B2 JP5274275 B2 JP 5274275B2
Authority
JP
Japan
Prior art keywords
chamber
substrate
heating
processing space
heat treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2009012401A
Other languages
English (en)
Japanese (ja)
Other versions
JP2010171206A (ja
JP2010171206A5 (enrdf_load_stackoverflow
Inventor
均 池田
智彦 岡山
浩一 松本
和 森岡
芳則 目崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ulvac Inc
Original Assignee
Ulvac Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac Inc filed Critical Ulvac Inc
Priority to JP2009012401A priority Critical patent/JP5274275B2/ja
Priority to TW098109525A priority patent/TWI452251B/zh
Priority to KR1020090026382A priority patent/KR101591088B1/ko
Priority to CN200910129865.7A priority patent/CN101789358B/zh
Publication of JP2010171206A publication Critical patent/JP2010171206A/ja
Publication of JP2010171206A5 publication Critical patent/JP2010171206A5/ja
Application granted granted Critical
Publication of JP5274275B2 publication Critical patent/JP5274275B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67098Apparatus for thermal treatment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67126Apparatus for sealing, encapsulating, glassing, decapsulating or the like
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Muffle Furnaces And Rotary Kilns (AREA)
  • Furnace Details (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP2009012401A 2009-01-22 2009-01-22 加熱処理装置 Active JP5274275B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2009012401A JP5274275B2 (ja) 2009-01-22 2009-01-22 加熱処理装置
TW098109525A TWI452251B (zh) 2009-01-22 2009-03-24 Heat treatment device
KR1020090026382A KR101591088B1 (ko) 2009-01-22 2009-03-27 가열 처리 장치
CN200910129865.7A CN101789358B (zh) 2009-01-22 2009-03-30 加热处理装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009012401A JP5274275B2 (ja) 2009-01-22 2009-01-22 加熱処理装置

Publications (3)

Publication Number Publication Date
JP2010171206A JP2010171206A (ja) 2010-08-05
JP2010171206A5 JP2010171206A5 (enrdf_load_stackoverflow) 2012-02-16
JP5274275B2 true JP5274275B2 (ja) 2013-08-28

Family

ID=42532520

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009012401A Active JP5274275B2 (ja) 2009-01-22 2009-01-22 加熱処理装置

Country Status (4)

Country Link
JP (1) JP5274275B2 (enrdf_load_stackoverflow)
KR (1) KR101591088B1 (enrdf_load_stackoverflow)
CN (1) CN101789358B (enrdf_load_stackoverflow)
TW (1) TWI452251B (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8606900B1 (en) 1995-06-07 2013-12-10 Soverain Software Llc Method and system for counting web access requests
US8856819B2 (en) 1998-02-26 2014-10-07 Hitachi Maxell, Ltd. Receiver set, information apparatus and receiving system
US9900305B2 (en) 1998-01-12 2018-02-20 Soverain Ip, Llc Internet server access control and monitoring systems

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104197668B (zh) * 2014-09-24 2016-03-02 南京耀天干燥设备有限公司 一种改进的低温真空干燥箱
JP7406749B2 (ja) * 2019-06-28 2023-12-28 日新イオン機器株式会社 加熱装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0769391A (ja) * 1993-01-19 1995-03-14 Gold Kogyo Kk 精密部品搬送用トレー
JP2000114151A (ja) * 1998-10-08 2000-04-21 Hitachi Ltd 基板加熱装置
KR100837599B1 (ko) * 2007-03-27 2008-06-13 주식회사 에스에프에이 기판 지지용 스테이지
JP4312787B2 (ja) * 2006-11-15 2009-08-12 東京エレクトロン株式会社 減圧乾燥装置
JP5052152B2 (ja) * 2007-02-13 2012-10-17 株式会社アルバック 真空チャンバ、ロードロックチャンバ、及び処理装置
JP2008311250A (ja) * 2007-06-12 2008-12-25 Tokyo Electron Ltd リフローシステムおよびリフロー方法

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8606900B1 (en) 1995-06-07 2013-12-10 Soverain Software Llc Method and system for counting web access requests
US8635327B1 (en) 1995-06-07 2014-01-21 Soverain Software Llc Web advertising method
US9900305B2 (en) 1998-01-12 2018-02-20 Soverain Ip, Llc Internet server access control and monitoring systems
US9917827B2 (en) 1998-01-12 2018-03-13 Soverain Ip, Llc Internet server access control and monitoring systems
US8856819B2 (en) 1998-02-26 2014-10-07 Hitachi Maxell, Ltd. Receiver set, information apparatus and receiving system
US9661363B2 (en) 1998-02-26 2017-05-23 Hitachi Maxell, Ltd. Receiver set, information apparatus and receiving system

Also Published As

Publication number Publication date
KR101591088B1 (ko) 2016-02-02
JP2010171206A (ja) 2010-08-05
TWI452251B (zh) 2014-09-11
CN101789358A (zh) 2010-07-28
TW201028629A (en) 2010-08-01
KR20100086399A (ko) 2010-07-30
CN101789358B (zh) 2014-02-19

Similar Documents

Publication Publication Date Title
JP5274275B2 (ja) 加熱処理装置
CN100573803C (zh) 用于非常大面积基片的真空处理室
JP2010171206A5 (enrdf_load_stackoverflow)
TWI462185B (zh) 基板處理裝置,基板支持具及半導體裝置之製造方法
US11906246B2 (en) Organic film forming apparatus
JP5232671B2 (ja) 処理装置
CN115440641A (zh) 十二边形传送腔室和具有十二边形传送腔室的处理系统
JP7191678B2 (ja) 基板処理装置、基板処理装置のカセット取り外し方法
KR100859975B1 (ko) 다단 진공 건조 장치
JP5192719B2 (ja) 加熱装置および基板処理装置
TWI645042B (zh) 磁性退火裝置
JP5634756B2 (ja) 防爆構造誘導加熱装置
JP2012163525A (ja) 温度測定器、成膜装置、及び成膜基板製造方法
JP4897256B2 (ja) 加熱炉
JP2013051281A (ja) 基板処理装置
JP2010169896A5 (enrdf_load_stackoverflow)
KR20150097862A (ko) 반도체 부품 공정처리 챔버장치
CN116949426A (zh) 一种基片处理装置及腔室内衬
KR20100094696A (ko) 보트
RU2680170C1 (ru) Устройство диффузионной сварки
JP7685002B2 (ja) 加熱処理装置
KR101039151B1 (ko) 보트
KR101492937B1 (ko) 액정 표시 패널용 열처리 장치
KR20230152401A (ko) 기판 처리 장치
JP2006090583A (ja) 熱処理装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20111212

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20111212

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120120

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20121212

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130125

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20130508

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20130514

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

Ref document number: 5274275

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250