JP5274275B2 - Heat treatment device - Google Patents

Heat treatment device Download PDF

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Publication number
JP5274275B2
JP5274275B2 JP2009012401A JP2009012401A JP5274275B2 JP 5274275 B2 JP5274275 B2 JP 5274275B2 JP 2009012401 A JP2009012401 A JP 2009012401A JP 2009012401 A JP2009012401 A JP 2009012401A JP 5274275 B2 JP5274275 B2 JP 5274275B2
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chamber
substrate
heating
processing space
heat treatment
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JP2010171206A (en
JP2010171206A5 (en
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均 池田
智彦 岡山
浩一 松本
和 森岡
芳則 目崎
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Ulvac Inc
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Ulvac Inc
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Priority to JP2009012401A priority Critical patent/JP5274275B2/en
Priority to TW098109525A priority patent/TWI452251B/en
Priority to KR1020090026382A priority patent/KR101591088B1/en
Priority to CN200910129865.7A priority patent/CN101789358B/en
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67098Apparatus for thermal treatment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67126Apparatus for sealing, encapsulating, glassing, decapsulating or the like
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches

Abstract

The invention provides a heating processing device capable manufacturing a substrate at low cost and well heating and processing the substrate at high efficiency. The heating processing device comprises a vacuum cavity (20), a support part (30) and a heating device (40). The vacuum cavity (20) comprises a cavity main body (21) composed of cavity parts (25) with perforation holes (24) and groove parts (27) continuously arranged on at least one adjacent cavity part (25) along the whole perimeter of an opening of the perforation hole (24) of another bunt surface, wherein each cavity part (25) is clamped between seal parts (26) in the groove parts to be fixed at the closed set state and the cavity main body (21) comprises a processing space (A) composed of a plurality of perforation holes (24); a wall part (22) inserted into the processing space (A); and a cover part (23) wherein the support part (30) is arranged in the processing space (A) to support the base plate (S) and the heating device (40) is used for heating the base plate (S) by irradiation.

Description

本発明は、基板を真空状態で加熱する加熱処理装置に関する。   The present invention relates to a heat treatment apparatus for heating a substrate in a vacuum state.

液晶ディスプレイ等の各種装置を製造する際には、例えば、基板の脱気処理等、真空下で基板を加熱処理する工程が必要となる。近年の各種装置の大型化に伴って、処理する基板の大型化が進んでいる。例えば、液晶ディスプレイの場合、11世代(3000mm×3320mm)サイズのガラス基板が用いられるようになってきている。このため、基板を加熱処理する加熱処理装置の真空チャンバも大型化する必要がある。   When manufacturing various devices such as a liquid crystal display, a step of heat-treating the substrate under vacuum, such as degassing of the substrate, is required. With the recent increase in size of various apparatuses, the size of substrates to be processed has been increasing. For example, in the case of a liquid crystal display, an 11th generation (3000 mm × 3320 mm) size glass substrate has been used. For this reason, it is necessary to enlarge the vacuum chamber of the heat treatment apparatus for heat-treating the substrate.

ここで、真空チャンバは、例えば、アルミニウムブロックの削り出しによって形成される。しかしながら、大型の基板に対応した真空チャンバをアルミニウムブロックによって形成すると、専用の大型切削加工装置が必要になる等、真空チャンバ自体の制作費が高くなる。   Here, the vacuum chamber is formed by cutting an aluminum block, for example. However, if a vacuum chamber corresponding to a large substrate is formed of an aluminum block, the production cost of the vacuum chamber itself becomes high, for example, a dedicated large cutting apparatus is required.

このような製造コストの高騰を抑えるべく、例えば、分割された複数個の構成部材が溶接により接合された枠状の側壁部と、この側壁部に対してボルトにより固定される底板および蓋板から構成される真空チャンバが知られてい(例えば、特許文献1参照)。 In order to suppress such an increase in manufacturing cost, for example, from a frame-shaped side wall portion in which a plurality of divided components are joined by welding, and a bottom plate and a lid plate fixed to the side wall portion by bolts constructed vacuum chamber that is known (eg, see Patent Document 1).

特開平8−64542号公報(図1及び請求項1)JP-A-8-64542 (FIG. 1 and claim 1)

しかしながら、大気状態と低圧状態とを繰り返して行うための加熱処理装置に、特許文献1のように構成部材が溶接によって接合された構造の真空チャンバ採用した場合、溶接部分からリークが発生し易いという問題がある。 However, when a vacuum chamber having a structure in which constituent members are joined by welding as in Patent Document 1 is employed in a heat treatment apparatus for repeatedly performing an atmospheric state and a low-pressure state, leakage is likely to occur from the welded portion. There is a problem.

また、枠状の側壁部のみを複数に分割したとしても、底板および蓋板を処理装置の設置場所まで輸送するためには、大型のトレーラなどの輸送手段が必要になって不便であり、また、そのサイズや重量によっては法令等の制限を受けて輸送できないという問題がある。   Further, even if only the frame-shaped side wall is divided into a plurality of parts, it is inconvenient because a transportation means such as a large trailer is required to transport the bottom plate and the cover plate to the installation location of the processing apparatus. Depending on the size and weight, there is a problem that transportation is not possible due to restrictions of laws and regulations.

ところで、基板の脱気処理等を行う加熱処理装置では、多数枚の大型基板を同時に処理するために、一つの処理空間を有する各真空チャンバを積み上げて固定して、多段の処理空間を有するように構成した真空チャンバを用いることがある。この場合、各真空チャンバの壁部は、真空状態にした処理空間内と外部との圧力差によるゆがみが生じない程度に厚く形成する必要があるため、真空チャンバの高さが高くなってしまう。このため、多段の真空チャンバは設置場所が限定され、また作製材料が多くなるという問題もある。   By the way, in a heat treatment apparatus that performs substrate degassing processing or the like, in order to simultaneously process a large number of large substrates, each vacuum chamber having one processing space is stacked and fixed to have a multi-stage processing space. A vacuum chamber configured as described above may be used. In this case, the wall of each vacuum chamber needs to be formed thick enough to prevent distortion due to the pressure difference between the processing space in a vacuum state and the outside, resulting in an increase in the height of the vacuum chamber. For this reason, the installation location of the multistage vacuum chamber is limited, and there are also problems that the production material increases.

さらに加熱処理装置においては、例えば、真空チャンバ内に設けられたホットプレート等の加熱手段上に基板を載置して加熱している。このような真空チャンバ内への基板の搬送は、一般的に、ロボットハンド等によって行われるが、このために、例えば、基板を昇降させる昇降機構等の特殊な機構が必要となり、コストが増加してしまうという問題がある。 Furthermore, in the heat treatment apparatus, for example, a substrate is placed on a heating means such as a hot plate provided in a vacuum chamber and heated. In general, the transfer of the substrate into the vacuum chamber is performed by a robot hand or the like. However, for this purpose, for example, a special mechanism such as an elevating mechanism for moving the substrate up and down is necessary, which increases the cost. There is a problem that it ends up.

本発明は、このような事情に鑑みてなされたものであり、低コストで製造することができ、高効率に基板を良好に加熱処理することができる加熱処理装置を提供することを目的とする。   This invention is made | formed in view of such a situation, and it aims at providing the heat processing apparatus which can be manufactured at low cost and can heat-process a board | substrate favorably with high efficiency. .

上記課題を解決する本発明は、基板を挿入可能に形成された貫通穴を有するブロック状の複数のチャンバ部材からなり、隣接するチャンバ部材の少なくとも一方に、他方との当接面の前記貫通穴の開口部の周囲に亘って連続して溝部が設けられ、各チャンバ部材が、前記溝部に装着されたシール部材を介してそれぞれ密接した状態で固定されて、複数の貫通穴で構成される処理空間を有するチャンバ本体と、前記処理空間の一方の開口を密封する壁面部材と、前記処理空間の他方の開口を開閉可能に塞ぐ蓋部材とを具備する真空チャンバと、前記処理空間内に配されて前記基板を支持する支持部材と、該支持部材に支持された前記基板に相対向して設けられて当該基板を放射熱によって加熱する加熱手段と、を有し、前記支持部材は、前記チャンバ部材に棒状のベース部材と該ベース部材上に立設された複数の基板支持ピンとで構成され、前記ベース部材は、その軸方向の複数箇所に屈曲可能なヒンジ部を有することを特徴とする加熱処理装置にある。 The present invention that solves the above-mentioned problems comprises a plurality of block-like chamber members having through holes formed so that a substrate can be inserted, and the through holes in the contact surface with at least one of the adjacent chamber members. A groove is provided continuously around the periphery of the opening of each of the chambers, and each chamber member is fixed in close contact via a seal member attached to the groove, and is configured by a plurality of through holes. A vacuum chamber comprising: a chamber body having a space; a wall member for sealing one opening of the processing space; and a lid member for closing the other opening of the processing space; Te supporting the substrate and the support member, disposed to face the substrate supported by the support member possess a heating means for heating the substrate by radiant heat, and the support member, the Chi Is composed of a plurality of substrate support pins erected on the rod-shaped base member and the base member on the Nba member, said base member, characterized in that it has a hinge portion bendable at a plurality of positions in the axial direction It is in the heat treatment apparatus.

かかる本発明では、真空チャンバを構成するチャンバ部材がコンパクト化されるため、搬送や設置が容易となる。また、支持部材に支持された基板が加熱手段の放射熱によって加熱されるため、基板の搬送が容易となり、加熱処理のスループットが向上する。また支持部材がチャンバ部材に設けられたベース部材と基板支持ピンとで構成されていることで、処理空間内で基板を良好に支持することができる。さらにベース部材がその軸方向の複数箇所に屈曲可能なヒンジ部を有することで、支持部材の取扱いが容易になり、メンテナンス作業等における安全性や作業性が向上する。 In this invention, since the chamber member which comprises a vacuum chamber is compactized, conveyance and installation become easy. Further, since the substrate supported by the support member is heated by the radiant heat of the heating means, the substrate can be easily transported and the throughput of the heat treatment can be improved. Further, since the support member is composed of the base member provided on the chamber member and the substrate support pins, the substrate can be favorably supported in the processing space. Furthermore, since the base member has hinge portions that can be bent at a plurality of locations in the axial direction, the support member can be easily handled, and safety and workability in maintenance work and the like are improved.

ここで、前記チャンバ部材のそれぞれには、その高さ方向に沿って前記貫通穴が所定間隔で複数設けられていることが好ましい。これにより、真空チャンバがよりコンパクト化されるため、作製材料が少なくて済み、コストの削減を図ることができる。   Here, each of the chamber members is preferably provided with a plurality of the through holes at predetermined intervals along the height direction thereof. Thereby, since the vacuum chamber is made more compact, less production material is required, and cost can be reduced.

また前記加熱手段の表面に放射効率を高める材料を含む被覆膜が形成されているか、或いは前記加熱手段上に放射効率を高める材料で形成された被覆板が設けられていることが好ましい。これにより、加熱手段の放射熱による基板の加熱効果が高まり、基板を良好に加熱することができる。   Further, it is preferable that a coating film containing a material for improving radiation efficiency is formed on the surface of the heating means, or a coating plate made of a material for improving radiation efficiency is provided on the heating means. Thereby, the heating effect of the board | substrate by the radiant heat of a heating means increases, and a board | substrate can be heated favorably.

さらに前記加熱手段が、加熱源としてのシースヒータを有することが好ましい。これにより、加熱手段の放射熱によって基板をより良好に加熱することができる。   Furthermore, it is preferable that the heating means has a sheath heater as a heating source. Thereby, a board | substrate can be heated more favorably with the radiant heat of a heating means.

以上説明したように、本発明の加熱処理装置は、比較的低コストで製造することができる。また、加熱処理のスループット、つまり処理効率を向上しつつ基板を良好に加熱処理することができる。   As described above, the heat treatment apparatus of the present invention can be manufactured at a relatively low cost. In addition, it is possible to heat-treat the substrate satisfactorily while improving the throughput of the heat treatment, that is, the processing efficiency.

本発明に係る加熱処理装置の断面図。Sectional drawing of the heat processing apparatus which concerns on this invention. 本発明に係るチャンバ本体を示す模式的斜視図。The typical perspective view which shows the chamber main body which concerns on this invention. 本発明に係るチャンバ部材を示す模式的斜視図。The typical perspective view showing the chamber member concerning the present invention. 本発明に係る処理空間の内部を示す模式図。The schematic diagram which shows the inside of the processing space which concerns on this invention. 本発明に係る保持部材の変形例を示す模式図。The schematic diagram which shows the modification of the holding member which concerns on this invention. 本発明に係るチャンバ本体の変形例を示す模式的斜視図。The typical perspective view which shows the modification of the chamber main body which concerns on this invention.

以下、本発明の実施形態について詳細に説明する。   Hereinafter, embodiments of the present invention will be described in detail.

図1は、一実施形態に係る加熱処理装置の断面図である。図2は、チャンバ本体の構成を示す模式的斜視図であり、図3は、チャンバ部材の構成を示す模式図であり、図4は、処理空間の内部を示す模式図である。   FIG. 1 is a cross-sectional view of a heat treatment apparatus according to an embodiment. FIG. 2 is a schematic perspective view showing the configuration of the chamber body, FIG. 3 is a schematic view showing the configuration of the chamber member, and FIG. 4 is a schematic view showing the inside of the processing space.

図1に示すように、加熱処理装置10は、基板Sを加熱処理するための処理空間Aを有する真空チャンバ20と、処理空間A内で基板Sを支持する支持部材30と、基板Sを加熱する加熱手段40とを具備する。この加熱処理装置10は、例えば、基板Sを加熱処理することにより脱気処理を行う際に用いられる。   As shown in FIG. 1, the heat treatment apparatus 10 heats the substrate S, a vacuum chamber 20 having a processing space A for heat-treating the substrate S, a support member 30 that supports the substrate S in the processing space A, and the substrate S. Heating means 40. The heat treatment apparatus 10 is used, for example, when performing a deaeration process by heat-treating the substrate S.

真空チャンバ20は、処理空間Aが形成されたチャンバ本体21と、処理空間Aの開口を塞ぐ壁面部材22及び蓋部材23とで構成されている。   The vacuum chamber 20 includes a chamber body 21 in which the processing space A is formed, and a wall surface member 22 and a lid member 23 that block the opening of the processing space A.

チャンバ本体21は、基板Sを挿入可能に形成された貫通穴24を有するブロック状(略直方体状)の複数のチャンバ部材25で構成されている。貫通穴24は、チャンバ本体21の相対向する一対の壁面にそれぞれ開口する。これらのチャンバ部材25は、貫通穴24が開口する壁面同士をそれぞれ密接した状態で固定されている。そして、各チャンバ部材25に形成された貫通穴24がそれぞれ連通され、これら複数の貫通穴24で処理空間Aが画成されている。   The chamber body 21 is composed of a plurality of block-like (substantially rectangular parallelepiped) chamber members 25 having through holes 24 formed so that the substrate S can be inserted. The through holes 24 are respectively opened in a pair of opposing wall surfaces of the chamber body 21. These chamber members 25 are fixed in a state where the wall surfaces where the through holes 24 open are in close contact with each other. The through holes 24 formed in each chamber member 25 communicate with each other, and a processing space A is defined by the plurality of through holes 24.

各チャンバ部材25のそれぞれには、複数(本実施形態では、5つ)の貫通穴24がチャンバ部材25の高さ方向(図中上下方向)に沿って所定間隔で複数設けられている。つまりチャンバ本体21は、処理空間Aを多段に有する。   Each of the chamber members 25 is provided with a plurality (five in this embodiment) of through holes 24 at predetermined intervals along the height direction (vertical direction in the drawing) of the chamber members 25. That is, the chamber body 21 has processing spaces A in multiple stages.

図2に示す例では、貫通穴24が形成されたチャンバ部材25を横に6個ずつ並べてそれぞれ固定することで6つの貫通穴24で構成される処理空間Aが5段に形成されている。そして、このように処理空間Aが5段に形成された各チャンバ部材25を縦に2個積み重ねることで10段の処理空間Aを有するチャンバ本体21が形成されている。すなわち、本実施形態に係るチャンバ本体21は、全部で12個のチャンバ部材25からなる。なお積み重ねられた各チャンバ部材25同士は、必ずしも固定されている必要はないが、ずれ防止のためにボルト等で固定されていることが好ましい。   In the example shown in FIG. 2, six processing chambers A each having six through holes 24 are formed by arranging the six chamber members 25 each having the through holes 24 side by side and fixing them. And the chamber main body 21 which has 10 steps | paragraphs of process space A is formed by stacking two chamber members 25 in which the process space A was formed in five steps in this way vertically. That is, the chamber body 21 according to the present embodiment includes a total of 12 chamber members 25. The stacked chamber members 25 do not necessarily need to be fixed, but are preferably fixed with bolts or the like to prevent displacement.

このような真空チャンバ20を構成する各チャンバ本体21は、例えば、横×奥行き(基板搬送方向)×高さが3200mm×3600mm×2200mm程度であるのに対し、各チャンバ部材25は、例えば、横×奥行き×高さが3200mm×600mm×2200mm程度と極めてコンパクトであり重量も比較的軽くなる。したがって、大型で特殊な輸送手段を用いることなくチャンバ本体21(チャンバ部材25)を比較的容易に輸送することができる。つまり、所定数のチャンバ部材25を加熱処理装置10の設置場所まで輸送し、そこで組み立てることで任意の大型のチャンバ本体21を作製することができる。   Each chamber body 21 constituting such a vacuum chamber 20 has, for example, width × depth (substrate transport direction) × height of about 3200 mm × 3600 mm × 2200 mm, whereas each chamber member 25 has, for example, a width X Depth x Height is about 3200mm x 600mm x 2200mm and it is extremely compact and relatively light in weight. Therefore, the chamber body 21 (chamber member 25) can be transported relatively easily without using a large and special transport means. That is, an arbitrarily large chamber main body 21 can be manufactured by transporting a predetermined number of chamber members 25 to the installation place of the heat treatment apparatus 10 and assembling there.

なおチャンバ部材25の製造方法は、特に限定されないが、チャンバ部材25は、例えば、アルミニウムやステンレス等の金属ブロックを削り出すことで製造される。   The method for manufacturing the chamber member 25 is not particularly limited, but the chamber member 25 is manufactured, for example, by cutting a metal block such as aluminum or stainless steel.

壁面部材22は、チャンバ本体21の処理空間Aが開口する一方の壁面21aに固定され、蓋部材23は、チャンバ本体21の処理空間Aが開口する他方の壁面21bに開閉可能に固定されている。本実施形態では、これら壁面部材22及び蓋部材23は、各処理空間Aに対応してそれぞれ設けられている。   The wall surface member 22 is fixed to one wall surface 21a where the processing space A of the chamber body 21 opens, and the lid member 23 is fixed to the other wall surface 21b where the processing space A of the chamber body 21 opens so as to be openable and closable. . In the present embodiment, the wall surface member 22 and the lid member 23 are provided corresponding to each processing space A, respectively.

さらに、これら各壁面部材22及び蓋部材23とチャンバ本体21(チャンバ部材25)との間、並びに各チャンバ部材25の間には、Oリング等のシール部材26が設けられている。具体的には、図3に示すように、各チャンバ部材25の貫通穴24が開口する少なくとも一方の壁面には、貫通穴24の周囲に亘って連続する溝部27が設けられており、この溝部27にシール部材26が装着されている。これにより、壁面部材22及び蓋部材23とチャンバ本体21(チャンバ部材25)との間、並びに各チャンバ部材25の間が確実に密封される。   Further, a seal member 26 such as an O-ring is provided between each wall member 22 and lid member 23 and the chamber body 21 (chamber member 25) and between each chamber member 25. Specifically, as shown in FIG. 3, at least one wall surface where the through hole 24 of each chamber member 25 opens is provided with a groove portion 27 that extends around the through hole 24. A seal member 26 is attached to 27. Thereby, the space between the wall surface member 22 and the lid member 23 and the chamber main body 21 (chamber member 25) and between the chamber members 25 are surely sealed.

上述のように真空チャンバ20を構成するチャンバ本体21、壁面部材22及び蓋部材23は、処理空間Aを密封可能にそれぞれ固定されている。すなわち、処理空間Aを画成する各部材は、溶接により固定されるのではなく、シール部材26を挟んでねじ等の締結部材によって固定されることで、処理空間A密封可能に構成されている。これにより、処理空間A内を大気状態と真空状態とに繰り返し変化させたとしても、処理空間Aを画成する各部材間でのリークの発生が抑えられる。 As described above, the chamber main body 21, the wall surface member 22, and the lid member 23 constituting the vacuum chamber 20 are respectively fixed so as to seal the processing space A. In other words, each member defining a process space A, rather than being fixed by welding, across the sealing member 26 that is fixed by a fastening member such as screws, are sealably constituting the processing space A Yes. As a result, even if the inside of the processing space A is repeatedly changed between the atmospheric state and the vacuum state, the occurrence of leakage between the members that define the processing space A is suppressed.

またチャンバ部材25は、処理空間Aの内部を所望の圧力(例えば1Pa)とした場合に周囲の壁部の歪みを抑制するために、各壁部の厚さを所定の厚さ以上に設定する必要がある。ただし、各処理空間Aの圧力が略一定であれば、各貫通穴24間の隔壁部28にはほとんど撓みが生じることはないため、隔壁部28の厚さは、最上部の貫通穴24の天井壁部及び最下部の貫通穴24の底壁部の厚さよりも薄くすることができる。これにより、チャンバ部材25をよりコンパクトに形成することができるため、搬送や設置がさらに容易になる。また、作製材料が少なくて済み、コストの削減を図ることもできる。   The chamber member 25 sets the thickness of each wall portion to a predetermined thickness or more in order to suppress distortion of the surrounding wall portion when the inside of the processing space A is set to a desired pressure (for example, 1 Pa). There is a need. However, if the pressure in each processing space A is substantially constant, the partition wall 28 between the through holes 24 hardly bends. Therefore, the thickness of the partition wall 28 is equal to that of the uppermost through hole 24. It can be made thinner than the thickness of the ceiling wall and the bottom wall of the lowermost through hole 24. Thereby, since the chamber member 25 can be formed more compactly, conveyance and installation are further facilitated. In addition, the manufacturing material can be reduced and the cost can be reduced.

以下、このような真空チャンバ20の処理空間A内に設置される支持部材30及び加熱手段40について詳細に説明する。   Hereinafter, the support member 30 and the heating unit 40 installed in the processing space A of the vacuum chamber 20 will be described in detail.

加熱手段40は、例えば、加熱源としてのシースヒータを有し、放射熱によって基板を、例えば120〜150℃程度に加熱するものである。本実施形態では、図4に示すように、加熱手段40は、ブロック状のチャンバ部材25毎に並設されてそれぞれ固定されている。すなわち、加熱手段40は、各チャンバ部材25の貫通穴24内にそれぞれ設置されている。 The heating means 40 has, for example, a sheath heater as a heating source, and heats the substrate to, for example, about 120 to 150 ° C. by radiant heat. In the present embodiment, as shown in FIG. 4, the heating means 40 is arranged in parallel for each block-shaped chamber member 25 and fixed thereto. That is, the heating means 40 is installed in each through hole 24 of each chamber member 25.

加熱手段40の表面には、表面処理として、放射効率を高める材料、例えば、金属材料等を含む被覆膜41が形成されている。これにより、加熱手段40の放射効率が高められるため、加熱手段40の放射熱によって基板Sを効率的に加熱することができる。被覆膜41は、例えば、加熱手段40の表面に材料を溶射することによって形成される。被覆膜41に用いる材料としては、金属材料、例えば、チタン又はクロム、或いはこれらを含む合金やこれらの酸化物等が好適に用いられる。勿論、被覆膜41に用いる材料は、放射効率を高めることができるものであれば特に限定されない。ただし、真空加熱処理室の観点からして、放出ガスの少ない材料を用いるのが望ましい。 On the surface of the heating means 40, as a surface treatment, a coating film 41 containing a material that enhances radiation efficiency, for example, a metal material is formed. Thereby, since the radiation efficiency of the heating means 40 is increased, the substrate S can be efficiently heated by the radiant heat of the heating means 40. The coating film 41 is formed by spraying a material on the surface of the heating unit 40, for example. As a material used for the coating film 41, a metal material, for example, titanium or chromium, an alloy containing these, an oxide thereof, or the like is preferably used. Of course, the material used for the coating film 41 is not particularly limited as long as the radiation efficiency can be increased. However, from the viewpoint of the vacuum heat treatment chamber, it is desirable to use a material that emits less gas.

なお、上述した材料からなる被覆膜41を形成したアルミ無垢板からなる試料に熱電対を設けて20mm離れた位置で放射温度計により、ヒーターの温度を測定し熱電対の温度と比較して放射効率を調べたところ、酸化チタンを溶射した場合の放射効率は0.89であり、酸化クロム膜を形成した場合の放射効率は0.9であった。なお、同様にして測定したアルミ無垢板の放射効率は0.3であったことから、これらの表面処理としての被覆膜41の形成を行うことにより、放射効率が高まることが分かった。   In addition, a thermocouple is provided on a sample made of a solid aluminum plate on which the coating film 41 made of the above-described material is formed, and the temperature of the heater is measured with a radiation thermometer at a position 20 mm away, and compared with the temperature of the thermocouple. When the radiation efficiency was examined, the radiation efficiency when spraying titanium oxide was 0.89, and the radiation efficiency when forming a chromium oxide film was 0.9. In addition, since the radiation efficiency of the solid aluminum plate measured similarly was 0.3, it turned out that radiation efficiency increases by forming the coating film 41 as these surface treatments.

また本実施形態では、加熱手段40の表面に被覆膜41を形成して放射効率を高めるようにしたが、例えば、被覆膜41の代わりに、加熱手段40とは別部材である金属材料からなる被覆板を、加熱手段40の表面に接触させた状態に設けるようにしてもよい。被覆板を形成する金属材料としては、被覆膜と同様の材料を用いればよい。このような構成としても、加熱手段40の放射効率を高めることができる。   In the present embodiment, the coating film 41 is formed on the surface of the heating unit 40 to increase the radiation efficiency. For example, instead of the coating film 41, a metal material that is a separate member from the heating unit 40 A covering plate made of may be provided in contact with the surface of the heating means 40. As the metal material for forming the cover plate, the same material as the cover film may be used. Even with such a configuration, the radiation efficiency of the heating means 40 can be increased.

支持部材30は、加熱手段40から所定距離だけ離れた位置で基板Sを支持する。本実施形態では、支持部材30は、加熱手段40上に配されており、基板Sの搬送方向に沿って設けられた棒状の複数のベース部材31(図4中では例として8本)と、ベース部材31に所定の間隔で立設された複数の基板支持ピン32とからなる。そして、支持部材30は、これら複数の基板支持ピン32の先端で基板Sを支持する。   The support member 30 supports the substrate S at a position away from the heating unit 40 by a predetermined distance. In the present embodiment, the support member 30 is disposed on the heating means 40, and a plurality of bar-shaped base members 31 (eight in FIG. 4 as an example) provided along the transport direction of the substrate S; The base member 31 includes a plurality of substrate support pins 32 erected at predetermined intervals. The support member 30 supports the substrate S at the tips of the plurality of substrate support pins 32.

ここで、基板Sは、例えば、ロボットハンドによって処理空間A内に搬送される。このとき、基板Sはロボットハンドによって蓋部材23側から処理空間A内に挿入されて、基板支持ピン32上に載置される。その後、ロボットハンドはこの基板Sと加熱手段40との隙間を移動して蓋部材23側から外部に引き抜かれる。 Here, the substrate S is transferred into the processing space A by a robot hand , for example. At this time, the substrate S is inserted into the processing space A from the lid member 23 side by the robot hand and placed on the substrate support pins 32. Thereafter, the robot hand moves through the gap between the substrate S and the heating means 40 and is pulled out from the lid member 23 side.

本発明の加熱処理装置10では、このようにロボットハンドによって支持部材30の基板支持ピン32上に基板Sを載置すると、その状態で基板Sを加熱手段40の放射熱によって加熱処理することができる。例えば、加熱手段としてホットプレート等を採用している従来の加熱処理装置では、基板支持ピン上に基板を載置した後、さらに加熱手段に接触させるために基板を移動させる必要があるが、本発明の加熱処理装置では、このような基板の移動が必要なくスループットが向上する。 In the heat treatment apparatus 10 of the present invention, in this manner places the substrate S on the substrate supporting pins 32 of the support member 30 by a robot hand, is subjected to a heat treatment of the substrate S by radiant heat of the heating means 40 in this state it can. For example, in a conventional heat treatment apparatus that employs a hot plate or the like as the heating means, it is necessary to move the substrate after placing the substrate on the substrate support pins in order to contact the heating means. In the heat treatment apparatus of the invention, such a movement of the substrate is unnecessary and the throughput is improved.

また、基板を移動して加熱手段に接触させるためには、例えば、基板支持ピンを昇降可能とさせるための機構等を設ける必要があるが、本発明の加熱処理装置にはこのような機構は必要ないため、加熱処理装置を比較的安価に製造することもできる。   Further, in order to move the substrate to contact the heating means, for example, it is necessary to provide a mechanism or the like for allowing the substrate support pins to move up and down, but such a mechanism is not included in the heat treatment apparatus of the present invention. Since it is not necessary, the heat treatment apparatus can be manufactured at a relatively low cost.

以上本発明にかかる加熱処理装置の一例について説明したが、本発明は本実施形態に限定されるものではない。   As mentioned above, although the example of the heat processing apparatus concerning this invention was demonstrated, this invention is not limited to this embodiment.

例えば、上述の実施形態では、1本の棒状のベース部材31上に基板支持ピン32が立設された支持部材30を例示したが、支持部材30の構成は、これに限定されるものではない。例えば、図5(a)に示すように、支持部材30は、複数の分割ベース部材33と、各分割ベース部材33を接続するヒンジ部34と、各分割ベース部材33上に所定の間隔を空けて立設された基板支持ピン32とで構成されていてもよい。ヒンジ部34は軸35を中心にして屈曲可能であるように構成されている。また隣接するヒンジ部34は、図5(b)に示すように、それぞれ逆方向に折れ曲がるように配されていることが好ましい。これにより、各ヒンジ部34の軸35を中心として支持部材30を折りたたむことができるため、取扱いが容易となる。例えば、装置のメンテナンス時に支持部材30を処理空間Aから取り外す場合には、長い支持部材30を折りたたんで短くしながら取り出すことが可能であるので、取り扱いが容易となる。   For example, in the above-described embodiment, the support member 30 in which the substrate support pins 32 are erected on the single bar-shaped base member 31 is illustrated, but the configuration of the support member 30 is not limited thereto. . For example, as illustrated in FIG. 5A, the support member 30 includes a plurality of divided base members 33, hinge portions 34 that connect the divided base members 33, and predetermined intervals on the divided base members 33. It may be configured with the substrate support pins 32 standing upright. The hinge portion 34 is configured to be bendable about the shaft 35. Moreover, it is preferable that the adjacent hinge part 34 is distribute | arranged so that it may each bend in the reverse direction, as shown in FIG.5 (b). Thereby, since the support member 30 can be folded centering | focusing on the axis | shaft 35 of each hinge part 34, handling becomes easy. For example, when the support member 30 is removed from the processing space A during the maintenance of the apparatus, the long support member 30 can be folded and taken out while being short, so that handling becomes easy.

また本実施形態では、チャンバ本体21を構成する各チャンバ部材25に複数(5つ)の貫通穴24を形成した例を説明したが、チャンバ本体21の構成は、これに限定されるものではない。例えば、図6に示すように、チャンバ本体21Aは、1つの貫通穴24が形成されたチャンバ部材25Aが所定数だけ積み上げられたものであってもよい。   In the present embodiment, an example in which a plurality (five) of through holes 24 are formed in each chamber member 25 constituting the chamber body 21 has been described. However, the configuration of the chamber body 21 is not limited to this. . For example, as shown in FIG. 6, the chamber body 21 </ b> A may be obtained by stacking a predetermined number of chamber members 25 </ b> A in which one through hole 24 is formed.

さらに本実施形態では加熱手段をチャンバ部材25に合わせて一つの処理空間Aに対して6つ設けたが、処理空間Aの大きさに合わせた大型の加熱手段を設けてもよい。また本実施形態では、処理空間A内に支持部材30と加熱手段40とを別々に設けるようにしたが、これらは一体的に設けられていてもよい。具体的には、例えば、加熱手段40上に基板支持ピン32が直接設けられていてもよい。   Further, in the present embodiment, six heating means are provided for one processing space A in accordance with the chamber member 25, but a large heating means corresponding to the size of the processing space A may be provided. In the present embodiment, the support member 30 and the heating unit 40 are separately provided in the processing space A, but they may be provided integrally. Specifically, for example, the substrate support pins 32 may be provided directly on the heating means 40.

また本実施形態では、各チャンバ部材25の貫通穴24が開口する少なくとも一方の壁面に貫通穴24の周囲に亘って連続する溝部27を設けたが、このような溝部27は、隣接する各チャンバ部材25の壁面にそれぞれ設けられていてもよい。   Moreover, in this embodiment, the groove part 27 which continues over the circumference | surroundings of the through-hole 24 was provided in the at least one wall surface where the through-hole 24 of each chamber member 25 opens, but such a groove part 27 is provided in each adjacent chamber. Each may be provided on the wall surface of the member 25.

10 加熱処理装置
20 真空チャンバ
21 チャンバ本体
22 壁面部材
23 蓋部材
24 貫通穴
25 チャンバ部材
26 シール部材
27 溝部
28 隔壁部
30 支持部材
31 ベース部材
32 基板支持ピン
33 分割ベース部材
34 ヒンジ部
35 軸
40 加熱手段
41 被覆膜
A 処理空間
S 基板
DESCRIPTION OF SYMBOLS 10 Heat processing apparatus 20 Vacuum chamber 21 Chamber main body 22 Wall surface member 23 Cover member 24 Through hole 25 Chamber member 26 Seal member 27 Groove part 28 Partition part 30 Support member 31 Base member 32 Substrate support pin 33 Divided base member 34 Hinge part 35 Shaft 40 Heating means 41 Coating film A Processing space S Substrate

Claims (5)

基板を挿入可能に形成された貫通穴を有するブロック状の複数のチャンバ部材からなり、隣接するチャンバ部材の少なくとも一方に、他方との当接面の前記貫通穴の開口部の周囲に亘って連続して溝部が設けられ、各チャンバ部材が、前記溝部に装着されたシール部材を介してそれぞれ密接した状態で固定されて、複数の貫通穴で構成される処理空間を有するチャンバ本体と、前記処理空間の一方の開口を密封する壁面部材と、前記処理空間の他方の開口を開閉可能に塞ぐ蓋部材とを具備する真空チャンバと、
前記処理空間内に配されて前記基板を支持する支持部材と、
該支持部材に支持された前記基板に相対向して設けられて当該基板を放射熱によって加熱する加熱手段と、
を有し、
前記支持部材は、前記チャンバ部材に棒状のベース部材と該ベース部材上に立設された複数の基板支持ピンとで構成され、
前記ベース部材は、その軸方向の複数箇所に屈曲可能なヒンジ部を有することを特徴とする加熱処理装置。
Consists of a plurality of block-shaped chamber members having through holes formed so that a substrate can be inserted, and is continuous over at least one of the adjacent chamber members around the opening of the through hole on the contact surface with the other chamber member. A chamber body having a processing space constituted by a plurality of through holes, each chamber member being fixed in close contact with each other via a seal member attached to the groove portion, and the processing A vacuum chamber comprising a wall member for sealing one opening of the space, and a lid member for closing the other opening of the processing space so as to be openable and closable;
A support member disposed in the processing space and supporting the substrate;
Heating means provided opposite to the substrate supported by the support member and heating the substrate by radiant heat;
I have a,
The support member includes a rod-shaped base member and a plurality of substrate support pins provided on the base member on the chamber member,
The said base member has the hinge part which can be bent in the several location of the axial direction, The heat processing apparatus characterized by the above-mentioned.
前記チャンバ部材のそれぞれには、その高さ方向に沿って前記貫通穴が所定間隔で複数設けられていることを特徴とする請求項1に記載の加熱処理装置。   2. The heat treatment apparatus according to claim 1, wherein each of the chamber members is provided with a plurality of the through holes at a predetermined interval along a height direction thereof. 前記加熱手段の表面に放射効率を高める材料を含む被覆膜が形成されていることを特徴とする請求項1又は2に記載の加熱処理装置。   The heat treatment apparatus according to claim 1, wherein a coating film including a material that enhances radiation efficiency is formed on a surface of the heating unit. 前記加熱手段上に放射効率を高める材料で形成された被覆板が設けられていることを特徴とする請求項1〜3の何れか一項に記載の加熱処理装置。   The heat treatment apparatus according to claim 1, wherein a covering plate made of a material that increases radiation efficiency is provided on the heating unit. 前記加熱手段が、加熱源としてのシースヒータを有することを特徴とする請求項1〜4の何れか一項に記載の加熱処理装置。   The heat treatment apparatus according to claim 1, wherein the heating unit includes a sheath heater as a heating source.
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