JP5265921B2 - ガス放電レーザ帯域幅及び中心波長制御の方法及び機器 - Google Patents

ガス放電レーザ帯域幅及び中心波長制御の方法及び機器 Download PDF

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JP5265921B2
JP5265921B2 JP2007544430A JP2007544430A JP5265921B2 JP 5265921 B2 JP5265921 B2 JP 5265921B2 JP 2007544430 A JP2007544430 A JP 2007544430A JP 2007544430 A JP2007544430 A JP 2007544430A JP 5265921 B2 JP5265921 B2 JP 5265921B2
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bandwidth
laser system
gas discharge
curvature
bcd
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JP2008527683A (ja
JP2008527683A5 (enExample
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フェドー ビー トリントチョーク
ロバート エヌ ジャック
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サイマー インコーポレイテッド
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/105—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the mutual position or the reflecting properties of the reflectors of the cavity, e.g. by controlling the cavity length
    • H01S3/1055—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the mutual position or the reflecting properties of the reflectors of the cavity, e.g. by controlling the cavity length one of the reflectors being constituted by a diffraction grating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70041—Production of exposure light, i.e. light sources by pulsed sources, e.g. multiplexing, pulse duration, interval control or intensity control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/08—Construction or shape of optical resonators or components thereof
    • H01S3/08072—Thermal lensing or thermally induced birefringence; Compensation thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/097—Processes or apparatus for excitation, e.g. pumping by gas discharge of a gas laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/10069—Memorized or pre-programmed characteristics, e.g. look-up table [LUT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/22—Gases
    • H01S3/223—Gases the active gas being polyatomic, i.e. containing two or more atoms
    • H01S3/225—Gases the active gas being polyatomic, i.e. containing two or more atoms comprising an excimer or exciplex

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Lasers (AREA)
JP2007544430A 2004-11-30 2005-11-28 ガス放電レーザ帯域幅及び中心波長制御の方法及び機器 Expired - Lifetime JP5265921B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US11/000,571 2004-11-30
US11/000,571 US20060114956A1 (en) 2004-11-30 2004-11-30 High power high pulse repetition rate gas discharge laser system bandwidth management
US11/254,282 US7643522B2 (en) 2004-11-30 2005-10-20 Method and apparatus for gas discharge laser bandwidth and center wavelength control
US11/254,282 2005-10-20
PCT/US2005/043059 WO2006060361A2 (en) 2004-11-30 2005-11-28 Method and apparatus for gas discharge laser bandwidth and center wavelength control

Publications (3)

Publication Number Publication Date
JP2008527683A JP2008527683A (ja) 2008-07-24
JP2008527683A5 JP2008527683A5 (enExample) 2009-01-22
JP5265921B2 true JP5265921B2 (ja) 2013-08-14

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JP2007544430A Expired - Lifetime JP5265921B2 (ja) 2004-11-30 2005-11-28 ガス放電レーザ帯域幅及び中心波長制御の方法及び機器

Country Status (4)

Country Link
US (1) US7643522B2 (enExample)
JP (1) JP5265921B2 (enExample)
TW (1) TWI283093B (enExample)
WO (1) WO2006060361A2 (enExample)

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US7715459B2 (en) * 2005-11-01 2010-05-11 Cymer, Inc. Laser system
US7630424B2 (en) * 2005-11-01 2009-12-08 Cymer, Inc. Laser system
US7643529B2 (en) 2005-11-01 2010-01-05 Cymer, Inc. Laser system
US7822084B2 (en) * 2006-02-17 2010-10-26 Cymer, Inc. Method and apparatus for stabilizing and tuning the bandwidth of laser light
US7852889B2 (en) * 2006-02-17 2010-12-14 Cymer, Inc. Active spectral control of DUV light source
US8259764B2 (en) 2006-06-21 2012-09-04 Cymer, Inc. Bandwidth control device
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US7659529B2 (en) * 2007-04-13 2010-02-09 Cymer, Inc. Method and apparatus for vibration reduction in laser system line narrowing unit wavelength selection optical element
US8144739B2 (en) * 2008-10-24 2012-03-27 Cymer, Inc. System method and apparatus for selecting and controlling light source bandwidth
US8837536B2 (en) * 2010-04-07 2014-09-16 Cymer, Llc Method and apparatus for controlling light bandwidth
JP5755068B2 (ja) * 2011-07-27 2015-07-29 株式会社小松製作所 狭帯域化レーザのスペクトル幅調整装置
JP6113426B2 (ja) 2011-09-08 2017-04-12 ギガフォトン株式会社 マスタオシレータシステムおよびレーザ装置
JP5832581B2 (ja) * 2014-04-28 2015-12-16 株式会社小松製作所 狭帯域化レーザのスペクトル幅調整装置
US10816905B2 (en) * 2015-04-08 2020-10-27 Cymer, Llc Wavelength stabilization for an optical source
CN107851958B (zh) 2015-08-07 2021-01-12 极光先进雷射株式会社 窄带化激光装置
CN108475896B (zh) 2016-02-02 2020-12-11 极光先进雷射株式会社 窄带化激光装置
WO2018229823A1 (ja) 2017-06-12 2018-12-20 ギガフォトン株式会社 レーザ装置、及びレーザ装置管理システム、並びにレーザ装置の管理方法
US12374853B2 (en) 2019-05-22 2025-07-29 Cymer, Llc Control system for a plurality of deep ultraviolet optical oscillators
WO2021234835A1 (ja) * 2020-05-20 2021-11-25 ギガフォトン株式会社 狭帯域化ガスレーザ装置、波長制御方法、及び電子デバイスの製造方法
JP2023183776A (ja) 2022-06-16 2023-12-28 ギガフォトン株式会社 Ｅｕｖ光生成システム、及び電子デバイスの製造方法

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Also Published As

Publication number Publication date
JP2008527683A (ja) 2008-07-24
US7643522B2 (en) 2010-01-05
WO2006060361A2 (en) 2006-06-08
TWI283093B (en) 2007-06-21
TW200627739A (en) 2006-08-01
US20060114958A1 (en) 2006-06-01
WO2006060361A3 (en) 2009-04-16

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