JP5264047B2 - 半導体メモリ装置の制御情報をプログラムするための方法と装置 - Google Patents

半導体メモリ装置の制御情報をプログラムするための方法と装置 Download PDF

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Publication number
JP5264047B2
JP5264047B2 JP2005134657A JP2005134657A JP5264047B2 JP 5264047 B2 JP5264047 B2 JP 5264047B2 JP 2005134657 A JP2005134657 A JP 2005134657A JP 2005134657 A JP2005134657 A JP 2005134657A JP 5264047 B2 JP5264047 B2 JP 5264047B2
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Japan
Prior art keywords
program
voltage
speed program
speed
low
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Expired - Fee Related
Application number
JP2005134657A
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English (en)
Japanese (ja)
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JP2005322248A (ja
Inventor
相元 黄
眞▲ユブ▼ 李
範洙 金
光倫 李
贊▼イク▲ 朴
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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Publication date
Priority claimed from KR1020040031883A external-priority patent/KR100632940B1/ko
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of JP2005322248A publication Critical patent/JP2005322248A/ja
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Publication of JP5264047B2 publication Critical patent/JP5264047B2/ja
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3468—Prevention of overerasure or overprogramming, e.g. by verifying whilst erasing or writing

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
  • Memory System (AREA)
JP2005134657A 2004-05-06 2005-05-02 半導体メモリ装置の制御情報をプログラムするための方法と装置 Expired - Fee Related JP5264047B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR2004-031883 2004-05-06
KR1020040031883A KR100632940B1 (ko) 2004-05-06 2004-05-06 프로그램 사이클 시간을 가변시킬 수 있는 불 휘발성반도체 메모리 장치
US10/998,987 2004-11-30
US10/998,987 US7660159B2 (en) 2004-05-06 2004-11-30 Method and device for programming control information

Publications (2)

Publication Number Publication Date
JP2005322248A JP2005322248A (ja) 2005-11-17
JP5264047B2 true JP5264047B2 (ja) 2013-08-14

Family

ID=35267575

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005134657A Expired - Fee Related JP5264047B2 (ja) 2004-05-06 2005-05-02 半導体メモリ装置の制御情報をプログラムするための方法と装置

Country Status (3)

Country Link
JP (1) JP5264047B2 (de)
DE (1) DE102005020796B4 (de)
TW (1) TWI267864B (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG130988A1 (en) * 2005-09-29 2007-04-26 Trek 2000 Int Ltd Portable data storage device incorporating multiple flash memory units
KR100706816B1 (ko) * 2006-03-10 2007-04-12 삼성전자주식회사 프로그램 속도를 향상시킬 수 있는 불휘발성 메모리 장치및 그것의 프로그램 방법
KR101410288B1 (ko) * 2006-09-12 2014-06-20 샌디스크 테크놀로지스, 인코포레이티드 초기 프로그래밍 전압의 선형 추정을 위한 비휘발성 메모리및 방법
JP4996277B2 (ja) * 2007-02-09 2012-08-08 株式会社東芝 半導体記憶システム
KR100824203B1 (ko) * 2007-04-03 2008-04-21 주식회사 하이닉스반도체 플래시 메모리 소자의 프로그램 방법
KR101397549B1 (ko) * 2007-08-16 2014-05-26 삼성전자주식회사 고속 프로그램이 가능한 불휘발성 반도체 메모리 시스템 및그것의 독출 방법
WO2009152037A2 (en) * 2008-06-12 2009-12-17 Sandisk Corporation Nonvolatile memory and method for correlated multiple pass programming
KR101798013B1 (ko) * 2010-12-30 2017-11-16 삼성전자주식회사 비휘발성 메모리 장치의 프로그램 방법
JP5777991B2 (ja) * 2011-09-22 2015-09-16 ルネサスエレクトロニクス株式会社 半導体装置
JP2022040515A (ja) * 2020-08-31 2022-03-11 ウィンボンド エレクトロニクス コーポレーション フラッシュメモリおよびプログラミング方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3930074B2 (ja) * 1996-09-30 2007-06-13 株式会社ルネサステクノロジ 半導体集積回路及びデータ処理システム
KR100259972B1 (ko) * 1997-01-21 2000-06-15 윤종용 메모리 셀당 2개 이상의 저장 상태들을 갖는 불휘발성 반도체 메모리 장치
KR100332950B1 (ko) * 1998-04-10 2002-08-21 삼성전자 주식회사 단일비트동작모드와다중비트동작모드를갖는불휘발성반도체메모리장치및그것의기입/독출방법
DE19911794B4 (de) * 1999-03-17 2005-10-06 Robert Bosch Gmbh Verfahren und Vorrichtung zur Absicherung bei Veränderung des Speicherinhalts von Steuergeräten
JP2003257187A (ja) * 2002-02-28 2003-09-12 Hitachi Ltd 不揮発性メモリ、ｉｃカード及びデータ処理装置

Also Published As

Publication number Publication date
TW200537509A (en) 2005-11-16
DE102005020796A1 (de) 2005-12-01
DE102005020796B4 (de) 2009-04-16
TWI267864B (en) 2006-12-01
JP2005322248A (ja) 2005-11-17

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