TWI267864B - Method and device for programming control information - Google Patents

Method and device for programming control information Download PDF

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Publication number
TWI267864B
TWI267864B TW94112519A TW94112519A TWI267864B TW I267864 B TWI267864 B TW I267864B TW 94112519 A TW94112519 A TW 94112519A TW 94112519 A TW94112519 A TW 94112519A TW I267864 B TWI267864 B TW I267864B
Authority
TW
Taiwan
Prior art keywords
stylized
voltage
speed
stylization
isp isp
Prior art date
Application number
TW94112519A
Other languages
English (en)
Chinese (zh)
Other versions
TW200537509A (en
Inventor
Sang-Won Hwang
Jin-Yub Lee
Bum-Soo Kim
Kwang-Yoon Lee
Chan-Ik Park
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020040031883A external-priority patent/KR100632940B1/ko
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of TW200537509A publication Critical patent/TW200537509A/zh
Application granted granted Critical
Publication of TWI267864B publication Critical patent/TWI267864B/zh

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3468—Prevention of overerasure or overprogramming, e.g. by verifying whilst erasing or writing
TW94112519A 2004-05-06 2005-04-20 Method and device for programming control information TWI267864B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020040031883A KR100632940B1 (ko) 2004-05-06 2004-05-06 프로그램 사이클 시간을 가변시킬 수 있는 불 휘발성반도체 메모리 장치
US10/998,987 US7660159B2 (en) 2004-05-06 2004-11-30 Method and device for programming control information

Publications (2)

Publication Number Publication Date
TW200537509A TW200537509A (en) 2005-11-16
TWI267864B true TWI267864B (en) 2006-12-01

Family

ID=35267575

Family Applications (1)

Application Number Title Priority Date Filing Date
TW94112519A TWI267864B (en) 2004-05-06 2005-04-20 Method and device for programming control information

Country Status (3)

Country Link
JP (1) JP5264047B2 (de)
DE (1) DE102005020796B4 (de)
TW (1) TWI267864B (de)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI421687B (zh) * 2007-02-09 2014-01-01 Toshiba Kk Semiconductor memory system comprising a plurality of semiconductor memory devices
TWI457929B (zh) * 2006-09-12 2014-10-21 Sandisk Technologies Inc 初始程式電壓線性估計之方法及非揮發性記憶體

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG130988A1 (en) * 2005-09-29 2007-04-26 Trek 2000 Int Ltd Portable data storage device incorporating multiple flash memory units
KR100706816B1 (ko) * 2006-03-10 2007-04-12 삼성전자주식회사 프로그램 속도를 향상시킬 수 있는 불휘발성 메모리 장치및 그것의 프로그램 방법
KR100824203B1 (ko) * 2007-04-03 2008-04-21 주식회사 하이닉스반도체 플래시 메모리 소자의 프로그램 방법
KR101397549B1 (ko) * 2007-08-16 2014-05-26 삼성전자주식회사 고속 프로그램이 가능한 불휘발성 반도체 메모리 시스템 및그것의 독출 방법
WO2009152037A2 (en) * 2008-06-12 2009-12-17 Sandisk Corporation Nonvolatile memory and method for correlated multiple pass programming
KR101798013B1 (ko) * 2010-12-30 2017-11-16 삼성전자주식회사 비휘발성 메모리 장치의 프로그램 방법
JP5777991B2 (ja) * 2011-09-22 2015-09-16 ルネサスエレクトロニクス株式会社 半導体装置
JP2022040515A (ja) * 2020-08-31 2022-03-11 ウィンボンド エレクトロニクス コーポレーション フラッシュメモリおよびプログラミング方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3930074B2 (ja) * 1996-09-30 2007-06-13 株式会社ルネサステクノロジ 半導体集積回路及びデータ処理システム
KR100259972B1 (ko) * 1997-01-21 2000-06-15 윤종용 메모리 셀당 2개 이상의 저장 상태들을 갖는 불휘발성 반도체 메모리 장치
KR100332950B1 (ko) * 1998-04-10 2002-08-21 삼성전자 주식회사 단일비트동작모드와다중비트동작모드를갖는불휘발성반도체메모리장치및그것의기입/독출방법
DE19911794B4 (de) * 1999-03-17 2005-10-06 Robert Bosch Gmbh Verfahren und Vorrichtung zur Absicherung bei Veränderung des Speicherinhalts von Steuergeräten
JP2003257187A (ja) * 2002-02-28 2003-09-12 Hitachi Ltd 不揮発性メモリ、ｉｃカード及びデータ処理装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI457929B (zh) * 2006-09-12 2014-10-21 Sandisk Technologies Inc 初始程式電壓線性估計之方法及非揮發性記憶體
TWI421687B (zh) * 2007-02-09 2014-01-01 Toshiba Kk Semiconductor memory system comprising a plurality of semiconductor memory devices

Also Published As

Publication number Publication date
TW200537509A (en) 2005-11-16
DE102005020796A1 (de) 2005-12-01
DE102005020796B4 (de) 2009-04-16
JP2005322248A (ja) 2005-11-17
JP5264047B2 (ja) 2013-08-14

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