JP5260558B2 - ダミー画素、暗電流低減方法及び画像センサ - Google Patents

ダミー画素、暗電流低減方法及び画像センサ Download PDF

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JP5260558B2
JP5260558B2 JP2009552685A JP2009552685A JP5260558B2 JP 5260558 B2 JP5260558 B2 JP 5260558B2 JP 2009552685 A JP2009552685 A JP 2009552685A JP 2009552685 A JP2009552685 A JP 2009552685A JP 5260558 B2 JP5260558 B2 JP 5260558B2
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pixel
dummy
pixels
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reset
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JP2010520708A5 (OSRAM
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ロッシ、ジュゼッペ
コズロウスキ、レスター
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アルタセンズ インコーポレイテッド
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/63—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to dark current
    • H04N25/633—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to dark current by using optical black pixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2009552685A 2007-03-07 2008-02-20 ダミー画素、暗電流低減方法及び画像センサ Active JP5260558B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/715,736 US7755679B2 (en) 2007-03-07 2007-03-07 Apparatus and method for reducing edge effect in an image sensor
US11/715,736 2007-03-07
PCT/US2008/002242 WO2008108926A1 (en) 2007-03-07 2008-02-20 Apparatus and method for reducing edge effect in an image sensor

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JP2010520708A JP2010520708A (ja) 2010-06-10
JP2010520708A5 JP2010520708A5 (OSRAM) 2011-03-17
JP5260558B2 true JP5260558B2 (ja) 2013-08-14

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US (1) US7755679B2 (OSRAM)
EP (1) EP2118919B1 (OSRAM)
JP (1) JP5260558B2 (OSRAM)
WO (1) WO2008108926A1 (OSRAM)

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WO2008108926A1 (en) 2008-09-12
US20080218608A1 (en) 2008-09-11
EP2118919A4 (en) 2014-07-02
EP2118919B1 (en) 2016-04-13
EP2118919A1 (en) 2009-11-18
JP2010520708A (ja) 2010-06-10
US7755679B2 (en) 2010-07-13

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